定向棱镜改善内腔式光参量振荡器输出性能的研究

影响被动调Q内腔式光参量振荡器输出性能的主要因素包括谐振腔的失谐、被动调Q晶体本身存在的不稳定性及腔内泵浦光束的光强分布等。采用定向棱镜作为泵浦源谐振腔的全反射镜，实现了对谐振腔的加固设计、腔内增益的匀化及光束质量的改善。通过实验获得了输出能量11 mJ，能量稳定性8%，电光效率2.6‰，脉宽6.9 ns，发散角7 mrad的人眼安全激光。     

紧凑型人眼安全OPO激光器

提出了OPO与泵浦源激光器共用一个谐振腔的新型结构,保证了OPO谐振腔和基波谐振腔的腔模最佳匹配,OPO光束质量得到了很大提高。泵浦源激光器,采用布氏角切割的Cr∶YAG晶体作为被动Q开关,定向棱镜作为谐振腔全反镜,使得整个OPO激光器具有结构紧凑、抗失调能力强的特点。1. 57μm激光的输出能量8mJ、发散角5. 5mrad、重复频率1 /6Hz。     

定向棱镜腔改善重频DPL光束质量的研究

影响重频DPL光束质量的主要因素包括谐振腔的失谐、非均匀光泵浦以及工作物质的热效应.定向棱镜作为全反射镜与平面输出镜构成简单的自准直、不失调介稳腔结构,实现对侧向泵浦DPL的增益匀化、热效应的光学补偿以及光轴的自纠偏.通过实验发现:定向棱镜谐振腔在热传导冷却、Cr4 :YAG被动调Q的侧向泵浦DPL中,40 Hz运行时,0.532 μm输出能量为52.2 mJ/pulse,稳定度为0.5%,脉宽7.5 ns,频率稳定度0.025%,远场束散角为2.8 mrad,2小时内光轴指向近乎零漂移,远场光束分布稳定.     

定向棱镜改善Cr4+:YAG调Q输出稳定性的研究

为了改善Cr4+:YAG被动调Q激光器的输出稳定性,采用了定向棱镜谐振腔,通过实验得到了以下结果:单脉冲能量稳定度由7.3%提高到2.2%,脉宽稳定度由13.5%提高到6.5%,频率精度由0.01%提高到0.005%,输出脉冲波形稳定光滑。研究表明,采用定向棱镜谐振腔技术的Cr4+:YAG被动调Q激光器的输出稳定性较原平平腔激光器得到了显著改善。另外还报道了定向棱镜谐振腔技术消除Cr4+:YAG被动调Q激光器子脉冲的现象。     

基于内腔的调Q锁模光参量振荡器的研究

为了实现内腔型光参量振荡器（OPO）的调Q锁模脉冲输出,通过设计并匹配OPO谐振腔和基频激光腔的腔长,满足了同步泵浦条件,最终在实验上得到了信号光的调Q锁模输出;在实验中,采用氙灯泵浦Nd:YAG作为基频激光,以KTP晶体为非线性转换介质,采用电光开关作为调Q手段,测量了OPO的近红外信号光的输出波形、输出能量、光谱构成等输出特性。在泵浦能量12.8 J、调制频率20 kHz时,得到了锁模深度为100%的信号光输出,并发现信号光锁模脉冲重复率依赖于基频激光;得到了调Q锁模信号光输出能量随泵浦能量、电光调制频率的变化关系。     

基于内腔的KTP光参量振荡器的腔型结构研究

实验通过设计合适的光参量振荡器(OPO)腔型结构,实现了内腔OPO的脉冲输出。采用电光调Q方式、闪光灯泵浦Nd∶YAG晶体实现高光束质量的1.064 μm基频光对Π类非临界相位匹配KTP晶体进行激发,产生1.57 μm人眼安全波段激光。对OPO 的输出波形、输出能量进行测量。在不同腔镜曲率半径下分别对OPO输出能量进行测量,绘制成泵浦电压与输出能量之间的关系,在反射镜曲率半径8 m时得到最大光-光转换效率为14.2%。这与软件模拟的实验结果一致。     

角锥棱镜腔Cr4+:YAG被动调Q内腔式光参量振荡器

通过对角锥棱镜腔实现KTPⅡ类非临界相位匹配光参量振荡的理论分析,发现腔内存在特殊偏振方位角的本征模式,其满足Ⅱ类非临界相位匹配条件。实验上不但实现了该腔的Cr4 ∶YAG被动调Q内腔式光参量振荡器(OPO)运转,而且得到了优于平-平腔的转换效率,改善了信号光的稳定性。分析了Cr4 ∶YAG初始透过率和腔内功率密度的关系,实验获得不同Cr4 ∶YAG初始透过率、抽运能量和信号光能量的关系曲线。通过腔内功率密度的优化,电光效率高达0.25%,设计出结构紧凑、小型高效的工程实用光参量振荡器器件,抽运能量阈值为4.7 J,输出能量为11.8 mJ,脉宽为6.9 ns,发散角为7 mrad,能量稳定性为5%。     

加固型人眼安全OPO激光器的设计

考虑到军用激光器对可靠性的特殊要求,设计了一种加固型的内腔式人眼安全OPO激光器。采用双定向棱镜折叠谐振腔、Cr4+:YAG被动调Q晶体、Ce-Nd:YAG激光棒、非临界相位匹配KTP光参量振荡晶体,获得5.3mJ/pulse1.57μmOPO激光输出,脉冲宽度约为6ns,发散角约为5mrad,重复频率为3Hz,连续工作时间为1min,且输出能量和光轴指向稳定的结果。该激光器具有结构紧凑、可靠性高的特点。     

新型高效的人眼安全OPO固体激光器

免调试谐振腔应用在内腔式Cr4+:YAG被动调Q的KTP光参量振荡(OPO)激光器中,获得综合性明显优于平平腔的结果:电光效率由2.27‰提高到2.70‰,1.57μm激光输出单脉冲能量由18 mJ提高到21.4mJ,脉宽由24ns压缩到7.8 ns,发散角由8 mrad减小到7 mrad.并发现定向棱镜腔激光输出能量、光轴指向、脉宽及波形等稳定性比平平腔均有显著改善.已研制出小型、高效、高稳定性、高光束质量的OPO激光器.     

1.57 μm内腔式OPO激光输出特性的研究

利用Cr^4＋：YAG调Q的1．06μm Nd：YAG激光腔抽运内腔式KTP晶体-光学参量振荡器（KTP-OPO）系统，实现了人眼安全1．57μm信号光振荡输出。通过分析Cr^4＋：YAG被动调Q特性，在保证单脉冲输出的情况下，讨论了OPO腔长变化对系统输出激光脉冲能量、发散角和脉宽的影响。结果表明，随着OPO腔长的增加，单脉冲输出能量、光束发散角减少，而脉冲宽度增加。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its