电吸收调制激光器集成芯片的高频测试

提出了一种精确测试电吸收调制激光器(EML)集成芯片高频特性的方法。待测芯片制作在带有微带线的热沉上,同时采用光探测器作为光电转换器,二者构成待测双口网络。被测双口网络的一端是共面线,使用微波探针作为测试夹具加载信号,另一端是同轴线,两个测试端口不同,不能采用简单的同轴校准方法校准待测系统。测试过程中采用扩展的开路-短路-负载(OSL)误差校准技术对集成器件的测试夹具微波探针进行校准,扣除了测试中使用的微波探针对集成光源高频特性的影响,同时采用光外差的方法扣除了高速光探测器的频率响应对结果的影响,得到集成光源散射参数的精确测试结果。     

光探测器芯片小信号等效电路模型的建立

提出了一种光探测器芯片小信号等效电路模型及其建立方法,首先根据光探测器的物理结构确定其等效电路模型,模型考虑了影响光探测器高频性能的主要因素，然后精确测量了光探测器芯片的S参数,通过遗传算法对测量的S参数进行拟合,最终计算出模型的各个参量，在130MHz-20GHz范围内的实验结果表明,模型仿真结果与测量结果相吻合,证明了建模方法的可靠性。该模型有效地模拟了光探测器芯片的高频特性,利用该模型可以对光探测器及相应光电集成器件进行电路级仿真和优化。     

光探测器芯片小信号等效电路模型的建立

提出了一种光探测器芯片小信号等效电路模型及其建立方法.首先根据光探测器的物理结构确定其等效电路模型,模型考虑了影响光探测器高频性能的主要因素.然后精确测量了光探测器芯片的S参数,通过遗传算法对测量的S参数进行拟合,最终计算出模型的各个参量.在130MHz～20GHz范围内的实验结果表明,模型仿真结果与测量结果相吻合,证明了建模方法的可靠性.该模型有效地模拟了光探测器芯片的高频特性,利用该模型可以对光探测器及相应光电集成器件进行电路级仿真和优化.     

扫频法精确测量高速光调制器频率响应

同微波网络一样,可以用S参数来精确描述光电子器件的性能.根据微波网络的S参数,详细推导了光电子器件的S参数.搭建了40 GHz高速测试系统,利用矢量网络分析仪(带宽40 GHz)和作为参考的标准高速光探测器(带宽45 GHz),测量了宽带光强度调制器(实测带宽35 GHz)的频率响应.理论上,通过S参数和T参数的互相转换,扣除了微波放大器对测试结果的影响.在120 MHz～35 GHz范围内,测得的结果与出厂数据取得了很好的一致性.文中通过合理的简化,得到了光调制器频率响应的简明表达式,从而降低了数据处理的复杂度.     

流图法在光探测器芯片高频特性测量校准上的应用

在采用光调制法测量光探测器芯片高频响应特性的过程中,测试系统往往忽视光调制器响应、高频探针衰减以及端口间失配等误差中的一项或几项.为了降低校准不完善对结果造成的误差,文中提出了基于信号流图的系统校准分析方法,考虑了各种频响误差及端口间失配的影响,推导出校准公式.利用该法对一种光探测器的典型测试系统--基于LCA(lightwave component analyzer)的测试系统做了进一步校准分析,在130MHz～20GHz范围内,测量了一种新型光探测器的高频响应参数S21,结果表明经流图法校准的S21参数比仅使用原有校准算法有明显改善,证明了该方法的可行性.     

流图法在光探测器芯片高频特性测量校准上的应用

在采用光调制法测量光探测器芯片高频响应特性的过程中,测试系统往往忽视光调制器响应、高频探针衰减以及端口间失配等误差中的一项或几项.为了降低校准不完善对结果造成的误差,文中提出了基于信号流图的系统校准分析方法,考虑了各种频响误差及端口间失配的影响,推导出校准公式.利用该法对一种光探测器的典型测试系统--基于LCA(lightwave component analyzer)的测试系统做了进一步校准分析,在130MHz～20GHz范围内,测量了一种新型光探测器的高频响应参数S21,结果表明经流图法校准的S21参数比仅使用原有校准算法有明显改善,证明了该方法的可行性.     

一种PIN二极管参数的提取方法与应用

采用夹具测量微波元件参数时会引入夹具误差。本文设计了一款适用于SMP-1320-079LF型号PIN二极管散射参数测量的夹具和对应的TRL校准套件,并利用TRL校准方法测试了该型号PIN二极管在UHF频段的实际散射参数。然后,建立了PIN二极管在两种工作状态下的等效电路模型,并根据测试参数,提取了等效电路参数。基于UHF-RFID系统应用需求,将PIN二极管应用于三端口开关馈电网络的设计,其工作频段为900～950 MHz。结果表明,改变PIN二极管的输入输出阻抗,三端口馈电网络均具有较好的开关特性,仿真与实测结果吻合。     

光电探测器传输特性测试方法研究

散射参数(S参数)可精确表征光电探测器的传输特性,本文针对现有测试方法及系统中存在的问题,分析了光波元件分析仪的原理和光电探测器测试误差来源,提出了一种光电探测器的传输特性测试方法,构建了光电探测器的测试误差模型和信号流图,推导了光电探测器的散射参数(S参数)求解公式。基于光电探测器的器件特性,对其测试过程进行优化,将测试过程分为微波域校准与光波域测试两步进行。对10 MHz^40 GHz范围内对光电探测器的S参数进行了测试,实验结果表明,该方法测量结果与经过计量的是德科技N4373D的测量结果数据一致性较好,在高频范围内,测量偏差小于0.5 dB,是一种有效的光电探测器传输特性参数测量方法。     

通过TRL校准提取管芯S参数的技术

介绍了一种基于TRL法的提取管芯S参数的方法.该方法从TRL校准出发,实际测量得到封装器件的S参数;管芯以外的参量(管壳及键和线)用等效电路表示,最后用微波仿真软件模拟得到管芯S参数.此方法在没有精确的测试夹具条件下,仍可以得到较理想的器件和管芯S参数.实验证明该方法简便、实用性强,可推广应用于不宜直接测量管芯S参数的器件.     

高速光探测器频率响应的精确表征

提出一种新的基于分布布拉格反射可调激光器的光外差频率响应测试系统,并给出了准确有效的校准方法来消除输出光功率和拍频线宽的波动等引起的误差,从而可以精确表征高速光探测器的频率响应特性.通过对标准高速光探测器的测试和校准,得到的结果与制造商提供的数据表相当符合,证明了该测试方法的准确性和有效性.文中也研究了系统中可能会影响频响特性测量的其他因素,如光源的边模抑制比、波长调谐速度等.     

A multifunctional test chip for microelectronic packaging and its application on RF property measurements

This paper develops a multifunctional test chip for property extractions on packaging design. Components on this test chip include the diodes as the temperature sensors; the polysilicon units as the heaters; the piezoresistors as the stress sensors; and the pads as well as the related metal connector designs for the electrical parameter extractions. To save the sensor numbers and the connecting wires, sensors on the test chip surface were put according to structure symmetry. Since each packaging design has its individual size, components on the test chip surface were laid based on assembly of small unit cells, so that flexible test chip size can be obtained to fit the requirements from different packaging dimensions. The inductance and capacitance for the packaging leads were also extracted under microwave frequency operations, and a testing fixture was built to cooperate the Quad Flat Package (QFP) samples with the RF-RLC meter. The availability of the new measurement system designs was demonstrated from the testing data.     

A measurement fixture suitable for measuring substrate noise in the UWB frequency band

This paper presents a measurement fixture suitable for measuring substrate carried noise for lightly doped substrates within the UWB frequency band. Signals coupling through the substrate are usually fairly weak and special precautions are taken to avoid any distortions that may be caused by the test fixture. The proposed measurement fixture is based on a modified ground-signal-ground (GSG) pad fixture. Parasitic effects in the measurement fixture are evaluated with help of an equivalent circuit model. From measured results, the presented fixture is shown to provide a measurement band from 3 to 10 GHz. As an example of the usability of the presented fixture a test-case using a class-E PA is presented. The noise injected by the class-E PA is measured using the proposed fixture as noise detector and the results are show to be accurate to within ±1.5 dB.     

基于电磁仿真和测试的表面贴装器件建模

为了建立表面贴装器件的计算机辅助设计等效电路模型,必须考虑到寄生效应和测试夹具带来的影响,因此必须对测试夹具进行去嵌。以表贴电阻为例介绍了基于数值分析法和测量法去除夹具效应和提取电阻等效电路模型的方法。所提取的等效电路模型能够在高达10 GHz的频率范围内表征器件。     

镀金黄铜基板上金丝键合拱高测量及控制技术

引线键合是多芯片微波组件微组装中常用的工艺,通常都会以一定拱弧实现芯片与基板、基板与基板间的互连。如何进行拱高的测量和控制对引线键合有着重要意义,因为拱高的大小还会对微波性能产生重要的影响。文中利用自动键合机获得若干组引线,采用光学测量方法,在放大40倍的状态下分别进行了不同工艺参数下的拱高测量,得出结论在测试范围内,拱度随着弧长的增加而增加,同时还获得了一组适用于微波应用的键合参数。     

De-embedding and unterminating microwave fixtures with nonlinearleast squares

A general method of characterizing microwave test fixtures for the purpose of determining the parameters of devices embedded in the fixture is discussed. The technique was used to investigate deembedding under the assumptions that all measurement errors are random and normally distributed and that the standards are distributed uniformly around the Smith chart. It was shown that for any given number of standards, the greatest accuracy under these assumptions is achieved by utilizing a large set of known reflective loads. When the propagation constant and the reflection coefficients of the standards are not known, then equal numbers of thru lines and reflective loads give the highest accuracy, although not as high as when the propagation constant and reflection coefficients are known. The accuracy of the technique was studied and compared with that of the common open-short-load (OSL) and thru-reflect-line methods. The OSL technique was found to be considerably less accurate than using sets of offset reflective loads     

High-Speed Coplanar Waveguide Based Submount for 40 Gbit/s Electroabsorption Modulator

A high-speed submount has been designed and fabricated for 40 Gb/s electroabsorption (EA) modulators. The submount contains a coplanar waveguide (CPW) for microwave signal feeding and a Ta₂N thin-film resistor for impedance matching. The CPW transmission line is designed to ensure low microwave loss and reflection, and Ti/Cu/Ni/Au metal is adopted for electrode fabrication to guarantee good contact with the Ta₂N thin-film. The typical reflection coefficient of fabricated submount is estimated to be lower than?21 dB up to 40 GHz. As a demonstration, a high-speed EA modulator was chip-level packaged using the high-speed submount, and the measured small-signal modulation bandwidth was over 40 GHz.     

High-frequency periodic time-domain waveform measurement system

A system is presented for the accurate measurement of high-frequency periodic time-domain voltage and current waveforms of a nonlinear microwave device. The measurements are performed in the time domain using a high-speed sampling oscilloscope. The results are Fourier-transformed into the frequency domain for error correction and then back into the time domain. An error-correction algorithm is presented that makes it possible to obtain accurate waveforms in spite of nonideal system components. Practical difficulties in measurement-system characterization are also discussed. An accurate circuit model for the measurement fixture is developed and its element values are determined. Measurement results are given showing the waveforms in a microwave transistor operated in the nonlinear region. The errors caused by signal processing are discussed     

基于变焦显微测量技术的键合金丝参数测量

欧美国家在半导体行业一直以来对我国实行技术封锁政策,我国许多关键技术和设备只能依靠进口,其中就包括键合金丝参数测量设备。键合金丝参数测量设备主要用于自动检测键合金丝的拱高和跨度等参数。由于键合金丝的回波损耗、驻波等微波传输特性与键合金丝的拱高、跨度等参数呈对应关系,因此可以通过测量相关参数的方法来检测键合金丝的微波传输特性是否合格。通过这一方法可以解决人工测量导致的速率低下的问题,提高键合质量检测效率,降低检测成本。本文基于变焦显微测量技术实现了键合金丝参数的测量。该方法通过自主设计的图像采集平台,获取到键合金丝的一组图像,然后进行聚焦区域提取,从而实现键合金丝的三维重建及参数测量。该方法对键合金丝拱高的测量精度<0.01 mm,相对误差<1.5%,对键合金丝跨度的测量精度<0.005 mm,相对误差<0.7%,可以满足自动检测键合金丝参数的设计需求。