宽带相对论速调管放大器输出腔模拟设计

为了展宽相对论速调管放大器的输出段带宽,设计了一种用于S 波段、10%带宽、相对论速调管放大器输出腔 结构。该结构采用重叠模双间隙腔,该腔有两个工作模式（0 模和π 模）。采用三维程序模拟分析发现：两个腔间的圆盘 半径增大时,0 模的谐频率几乎不变,π 模的谐振频率升高即模式间隔增大;当间隙长度增大时,模式间隔减小;当输出 耦合孔的角度在一定范围内由小变大时,模式间隔增大;输出腔半径增大时, 模式间隔减小。本文通过调节以上腔体尺寸 使两个工作模式的频率部分重合增加了输出腔的工作带宽。在束压850kV、束流7.6kA、基波调制深度为90%时、调制微 波频率为2.85GHz 时,采用三维PIC 程序模拟得到2GW 的输出微波功率,3dB 相对带宽约10%。     

一种超宽带双信道速调管输出回路的设计和实验

该文介绍了一种超宽带双信道速调管输出回路的设计思路和实现过程。以Ansoft HFSS软件为设计平台,在S波段设计出一个带宽超过550 MHz的超宽带双信道双间隙耦合腔输出回路。设计了信道转换机构,并分别确定了两个信道的谐振腔参数。得出了不改变两个谐振腔参数,只需调节耦合槽的尺寸就能够实现信道转换的结论。通过对HFSS软件建立的模型进行计算,得到了双间隙耦合腔输出回路中各模式的频率,与冷测结果基本一致。利用集中元件等效电路法计算了双间隙耦合腔输出回路的间隙阻抗,计算结果与冷测结果基本一致。     

一种新型滤波器加载同轴复合腔输出回路

该文介绍了一种适用于 S 波段宽带多注速调管的新型滤波器加载同轴复合腔输出回路.根据耦合谐振腔理论对该输出结构进行了理论分析并给出其等效电路;采用3维电磁场仿真软件CST-MWS进行计算模拟,研究了输出腔间隙的场分布均匀性及输出回路间隙阻抗的频率特性.研究结果表明,采用该滤波器加载同轴复合腔输出回路不仅可以极大地降低多注速调管总体对高阴极发射电流密度的要求,而且在保证多注速调管128 MHz/dB带宽的同时输出腔间隙处的轴向电场有较好的均匀性.     

225 GHz回旋管同轴输出结构的数值模拟

在225 GHz回旋管同轴输出腔结构特性的基础上,采用三维电磁软件给出了输出腔后同轴输出结构的设计。数值模拟了内轴不同半径和截断长度对传输效率和带宽的影响,并由此设计出中心频率225 GHz、传输效率为96.2%、带宽接近4GHz的同轴输出结构。     

W 波段带状注速调管准光输出结构的研究

研究了一种新型的带状注速调管多间隙输出结构——准光输出腔。通过电场均匀性,双端口腔外Q 值的计 算以及参数敏感性几个方面的研究,分析了其设计和性能。结果表明,相对于传统的多间隙输出结构,准光输出腔电 场均匀性更好、设计更为灵活,并且电性能对耦合孔尺寸的敏感性更低,这使得准光输出腔在面对工程中产生的误差 时性能更为稳定。对具体设计的W 波段五间隙准光输出腔,采用三维MAGIC 模拟检验了其功率提取能力、效率以 及带宽,结果显示：可以获得40kW 的功率输出,相应于14%的互作用效率,3dB 带宽达到150MHz。研究表明,准 光输出腔非常适合作为带状注速调管（一种窄带高功率放大器）的输出电路。     

L波段10 MW同轴腔多注速调管双端口输出系统的研究

该文对L波段10 MW多注速调管输出系统开展了模拟和实验研究。计算分析了新型双端口6注同轴输出腔谐振频率、品质因数、特性阻抗等高频参数;设计了扁波导耦合输出窗,在波导内设置金属杆以调节阻抗匹配,使输出窗在工作频点1.3 GHz的驻波比计算值小于1.01,驻波比1.2以下带宽为100 MHz;加工了输出系统实物,开展了冷测实验,实验值与设计值吻合良好;利用PIC软件对输出系统注-波互作用特性进行了计算,获得了大于10 MW的输出功率,计算注-波转换效率大于65%。     

3-节滤波器型π-模双间隙腔加载同轴-矩形波导输出电路研究

该文提出了一种适合于低频段中等功率的宽带速调管的新型3-节滤波器型输出电路-π-模双间隙腔加载同轴-矩形波导输出电路,并对输出电路的性能以及各部分结构对输出腔间隙阻抗的影响规律进行详细研究.研究结果表明,同轴-矩形波导混合型输出电路不仅克服了低频段宽带速调管中输出波导尺寸太大而影响聚焦系统的困难,有利于提高电子注通过率和整管效率,同时还具有很好的输出带宽潜力和良好的高功率承受能力.     

双间隙双耦合口输出回路间隙阻抗的模拟计算

本文根据微波网络理论，建立了双间隙双耦合口输出回路间隙阻抗频率特性的冷测模拟计算方法。运用该方法，计算分析了某S波段双间隙双耦合口输出腔的间隙阻抗频率特性。结果显示，本方法与采用场分析法得到的结果符合良好。     

速调管截止波导滤波器型输出回路研究

对截止波导的滤波特性以及截止波导与TM010模单间隙腔耦合进行了深入研究,在这基础上设计出一个相对带宽5.6%的圆柱重入式单间隙腔加载截止波导滤波器型的L波段宽带速调管输出回路,并总结了截止波导段的长度和金属销钉的位置对输出腔间隙阻抗的影响规律.     

TM310高次模圆柱形谐振腔耦合矩形波导输出回路研究

设计了适用于多注速调管,工作在TM310高次模圆柱形谐振腔耦合矩形波导输出回路,其工作中心频率为7 585.3 MHz,计算了腔体内各漂移管间隙阻抗的频率特性,并分析了输出回路的输出带宽.研究结果表明: 在相同频率条件下,采用圆柱形TM310工作模式的谐振腔体积将是采用圆柱形TM010工作模式谐振腔体积的7倍;TM310高次模圆柱形谐振腔耦合矩形波导后,各漂移管特性阻抗与耦合前相比有稍微变化,但耦合后各间隙特性阻抗非常接近;反射系数相位法及等效电路法计算输出腔外观品质因数分别为为154和160,输出中心频率7 585.263 MHz,比耦合前腔体谐振频率降低26.525 MHz,输出带宽约为3%,因此,该类型输出回路比较适合用作高射频段的窄带多注速调管.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.