甚低频发射天线的损耗电阻研究

甚低频发射天线结构庞大，但其尺寸与波长相比仍属于电小天线，它的辐射电阻较小，天线的损耗电阻对天线辐射效率影响较大；天线的损耗主要来自于地损耗电阻，本文根据单极型天线地损耗电阻的理论计算公式，对设计时需着重考虑的关键参数进行了分析，并借助数值仿真计算方法对某十三塔天线的实例进行了计算验证。     

电小甚低频发射天线的地损耗电阻计算与分析

针对电小甚低频发射天线辐射电阻小,地损耗影响天线辐射效率的问题,文中研究了基于解析法计算分区域均匀辐射状地网区内磁场损耗电阻、电场损耗电阻和地网区外磁场损耗电阻、电场损耗电阻的方法,根据该方法可实现对分区域均匀辐射状地网的损耗电阻计算.计算结果表明,电小甚低频发射天线的磁场损耗电阻是地损耗的主要部分;此外,在地网总长度和地网敷设区域半径不变的条件下,均匀辐射状地网并不是甚低频天线的地网敷设最佳模式.基于上述结果,提出通过分区域敷设均匀辐射状地网的方法来降低地损耗电阻,为进一步提高电小天线的辐射效率提供了一种新的途径,具有一定的理论和工程实践指导意义.     

汇流环接触问题分析

本文结合某产品汇流环结构,从汇流环的接触电阻性能、接触副的热性能、接触应力说明导电环硬度对汇流环接触特性的影响,从导电环的疲劳磨损机制和摩擦磨损机制探讨导电环磨屑的形成,提出了按导电摩擦副的接触应力选取导电环材料强度（硬度）的方法。     

机动甚低频天线性能的矩量法结合复像法的研究

提出一种加载机动甚低频天线的方式,对加载参数进行了优化.采用矩量法结合修正的镜像法,分析了加载后的天线在有耗地面上的辐射性能,提高了计算速度.仿真计算及模型实验结果表明,理论上通过合适的加载可改变电流分布,增加天线辐射电阻,提高天线效率.     

甚低频信号全向接收方法研究

本文基于机动载体广泛使用的磁性天性存在可靠接收甚低频信号的难题,分析了磁性天线的方向特性,提出了甚低频信号全向接收方法。该方法是对两副正交安装的磁性天线中的一副天线接收信号进行移相,然后与另一副天线接收信号进行合成作为收信机输入,合成信号与信号来波方向无关,实现了甚低频信号全向接收。使用该方法进行甚低频收信时,对机动载体运动方向无任何限制,不影响机动载体的机动能力和其它任务的执行。     

甚低频T形面型天线电气性能分析

运用三维全波电磁仿真软件对甚低频T形面型天线进行电磁建模和仿真分析计算,分析了天线的输入阻抗、有效高度、电容等电气参数。在建模时考虑了铁塔及不同顶容线模型的影响,并对有无铁塔及不同铁塔类型、以及天线不同形式时天线的输入阻抗进行对比分析。     

T型甚低频多调谐发射天线电容与电感研究

甚低频天线理论认为,采用多调谐方式,T型甚低频多调谐天线可以基本按比例增加天线电容,在实际工程中常用五组或六组天线.本文利用甚低频天线输入电抗的实测值,计算了在不同频率下天线所呈现的等效电容和等效电感,研究了T型甚低频发射天线的等效电容、电感、功率容量与天线组数及频率之间的关系.研究结果表明T型甚低频多调谐天线的组数过...     

甚低频系留气球缆绳天线设计实现与效能分析

甚低频系留气球缆绳天线是机动式车载甚低频通信系统的重要组成部分. 该缆绳在作为气球浮空平台系留缆的同时,还需兼具甚低频段电磁波的天线辐射功能. 本文针对甚低频辐射天线的电气特性及物理特性,通过对天线关键参数的计算、不同风速下的缆绳姿态及辐射方向图的设计仿真,在工程上以光电复合系留结构形式进行实现。最终结合理论分析与全系统通信试验数据对甚低频系留气球缆绳天线的辐射效能做出了综合评估,验证了该天线设计的正确性与高效性,为国内甚低频辐射天线的相关研究积累了一定的经验与数据.     

冰层下潜艇通讯中的电波传播问题

本文讨论了两种通讯方式的电波传输损耗。第一种通讯方式为地面发射台发射甚低频电波,经由地——电离层波导传播到达有冰层覆盖的海面,再穿透冰层和海水到达冰层下活动的潜艇的接收天线。第二种通讯方式为冰层下活动的潜艇,由水平漂浮天线发射中波或短波,穿透冰层,在海面上扩散传播,然后再穿透冰层到达在附近海域活动的另一潜艇的接收天线。计算了不同厚度的冰层对电波传输损耗的影响。     

基于阻尼振荡法的甚低频天线阻抗测量

为了准确测量甚低频发射天线在实际工作环境和工作频点上的输入阻抗,本文提出了一种基于RLC阻尼振荡法的阻抗测量方法,并推导了天线阻抗、电容、电感和电阻的测量公式;该测量方法可通过提高测量电压来提高测量信噪比和测量精度;测量系统谐振于被测天线的工作频点或其附近,使甚低频发射天线输入阻抗的测量值更接近天线在实际工况下的真实值.试验表明,本文提出的测量方法简单可行,具有较高的精度和稳定性,可实现甚低频发射天线输入阻抗的现场测量.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its