(Bi,Yb)4Ti3O12薄膜退火研究

采用溶胶-凝胶旋涂法在Pt(111)/Ti/SiO2/Si(100)基底上成功地沉积出(Bi,Yb)4Ti3O12[Bi3.4Ybo.6Ti3O12,BYT]铁电薄膜.系统地研究了退火温度对BYT铁电薄膜的晶体结构、表面形貌以及铁电性能(剩余极化强度)的影响.揭示了退火温度对BYT薄膜的晶体结构、表面形貌以及铁电性能有着明显的影响,给出了最佳退火温度为700℃左右.     

Bi_(3.5)Yb_(0.5)Ti_3O_(12)铁电薄膜的制备及性能

采用溶胶-凝胶(Sol-Gel)法在Pt(111)/Ti/SiO2/Si(100)基片上淀积了Bi3.5Yb0.5Ti3O12(BYT)铁电薄膜,研究了在不同退火温度下形成的BYT薄膜的微观结构以及铁电性能方面的区别。结果发现,在610,660,710和760℃不同温度下退火的BYT薄膜的结晶度不同,退火温度越高的BYT薄膜,其结晶度越高。并且发现,BYT薄膜的剩余极化值(2Pr)在710℃以下随退火温度增高而增大,在710℃达到最大;在外加400kV/cm电场时2Pr为36.7μC/cm2,然后随退火温度上升又有所下降。     

退火温度对ZnO/PZT薄膜结构及电阻率的影响

采用射频反应磁控溅射法在Pb(Zr0.52Ti0.48)O3(PZT)/Pt/Ti/SiO2/Si基片上制备了ZnO薄膜,利用X线衍射仪(XRD)、原子力显微镜(AFM)、霍尔效应测试系统等对不同退火温度下制备薄膜的结构、形貌及电阻率等进行了分析表征。结果表明,退火温度600℃的ZnO薄膜(002)择优取向较好,晶粒大小均匀,表面平整致密。随着退火温度的增大,电阻率先下降后升高,600℃时ZnO薄膜电阻率达最小。     

不同气氛保护下退火制备的CuO/SiO2复合薄膜微观结构分析

采用射频磁控共溅射法在Si(111)衬底上沉积Cu/SiO2复合薄膜.然后在N2和NH3保护下高温退火,再于空气中自然冷却氧化,制备出CuO结构,并对其微观结构进行分析.N2保护下退火温度为1100℃时样品中主晶相为立方晶系的CuO(200)晶面,薄膜样品表面出现纳米线状结构,表面组分主要包括Cu,O元素,冷却氧化形成CuO/SiO2复合薄膜.NH3气氛保护下退火,随着退火温度的升高,CuO由单斜晶相逐渐转变为立方晶相,CuO薄膜结晶质量提高.样品于900℃和1100℃退火后,形成有序散落的微米级颗粒,前者由粒状团簇组成,颗粒表面比较粗糙;后者由片融状小颗粒融合而成,颗粒表面比较光滑.     

升温速率对Bi_(0.98)La_(0.02)FeO_3-PbTiO_3薄膜结构性能的影响

采用sol-gel法在SiO2/Si(100)衬底上制备了0.68(Bi0.98La0.02)FeO3-0.32PbTiO3(BLFPT)薄膜。采用快速退火技术,以2～40℃/s速率升温、在700℃下保温100s对BLFPT薄膜进行了后续处理。研究了升温速率对BLFPT薄膜结构性能的影响。XRD测试结果显示BLFPT薄膜为赝立方结构。SEM和AFM结果表明,当升温速率为2℃/s时,BLFPT薄膜表面晶粒更为均匀致密,粗糙度最小。XPS分析显示,Bi、Fe和Ti分别主要以化合态Bi2O3、Fe2O3和TiO2的形式存在。     

不同气氛保护下退火制备的CuO/SiO2复合薄膜微观结构分析

采用射频磁控共溅射法在Si (111)衬底上沉积Cu/SiO2 复合薄膜,然后在N2和NH3保护下高温退火,再于空气中自然冷却氧化,制备出CuO结构,并对其微观结构进行分析. N2保护下退火温度为1100℃时样品中主晶相为立方晶系的CuO (200）晶面,薄膜样品表面出现纳米线状结构,表面组分主要包括Cu,O元素,冷却氧化形成CuO/SiO2复合薄膜. NH3气氛保护下退火,随着退火温度的升高,CuO由单斜晶相逐渐转变为立方晶相,CuO薄膜结晶质量提高. 样品于900℃和1100℃退火后,形成有序散落的微米级颗粒,前者由粒状团簇组成,颗粒表面比较粗糙;后者由片融状小颗粒融合而成,颗粒表面比较光滑.     

PLT/PbO铁电薄膜的制备及性能研究

采用射频磁控溅射技术,在室温溅射、后续退火条件下,以PbO为过渡层,在Pt(111)/Ti/SiO2/Si(100)衬底上制备出具有完全钙钛矿结构的(Pb0.90La0.10)Ti0.975O3(PLT)铁电薄膜;比较了在Pt(111)/Ti/SiO2/Si(100)衬底上有无PbO过渡层的PLT薄膜的微结构和铁电性能。实验结果表明,在Pt(111)/Ti/SiO2/Si(100)衬底上增加PbO过渡层提高了PLT薄膜的相纯度,并且所制备的PLT/PbO/Pt(111)/Ti/SiO2/Si(100)薄膜具有优良的介电和铁电性能,其剩余极化强度Pr为21.76μC/cm2,室温热释电系数p为2.75×10-8C/cm2.K。     

锆酸铅薄膜的生长特性与表面化学态

以醋酸铅和异丙醇锆为原料，乙二醇甲醚为溶剂。通过溶胶-凝胶法和快速退火工艺在Pt(111)／Ti／SiO2／Si(100)基片成功地制备出不开裂的钙钛矿PbZrO3薄膜。用XRD和原子力显微镜测量了薄膜随退火温度变化的结构和表面形貌特征，用XPS测试了650℃退火PbZrO3薄膜的表面化学态。     

钛酸锶钡/铋锌铌多层复合薄膜的制备及性能

采用溶胶一凝胶法在Pt/Ti/SiO2/Si衬底上制备了钛酸锶钡/铋锌铌多层复合薄膜样品.研究了不同退火温度下多层复合薄膜的结构、微观形貌及介电性能.结果表明:在退火温度高于700℃时,所得复合薄膜中会出现立方焦绿石结构的铋锌铌和钙钛矿结构的钛酸锶钡.750℃退火处理得到的多层复合薄膜,表面致密,无裂纹,其相对介电常数...     

铌酸盐无铅压电薄膜的脉冲激光沉积制备研究

采用脉冲激光沉积(PLD)在Pt/Ti/SiO2/Si基片上制备了新型Li0.04(Na0.5K0.5)0.96(Nb0.775Ta0.225)O3无铅压电陶瓷薄膜,分别利用X-射线衍射仪(XRD)和扫描电镜(SEM)研究了该薄膜的晶体结构及表面形貌,分析研究了制备技术和工艺对薄膜晶体结构及表面形貌的影响.研究结果表明:薄膜的热处理温度和氧气压力对所生长的薄膜影响较大;制备Li0.04(Na0.5K0.5)0.96(Nb0.775Ta0.225)O3薄膜的最佳退火温度和氧气压力分别为650℃和30 Pa;利用脉冲激光沉积的Li0.04(Na0.5K0.5)0.96(Nb0.775Ta0.225)O3无铅压电陶瓷薄膜具有精细的表面结构.     

微波介质陶瓷在介质滤波器上的应用

移动通信用天线滤波器应具有尺寸小，频率稳定，插入损耗低等特点。研究了ＢａＯ－Ｎｄ_２Ｏ_３－ＴｉＯ_２系介质材料的组成对其介电性能的影响，并分析了影响插入损耗的各个因素。在此基础上用掺Ｂｉ_２Ｏ_３的ＢａＯ－Ｎｄ_２Ｏ_３－ＴｉＯ_２系材料作介质试制出天线滤波器，测试了滤波器的性能，测定表明所制造的天线滤波器性能能够满足移动通信机的要求。     

BSZN微波介质陶瓷介电常数的异常

研究了(Ba1-xSrx)(Zn1/3Nb2/3)O3(BSZN)微波介质陶瓷介电常数的非线性变化以及异常的原因。随着系统中Sr(1/3Nb2/3)O3的增多,介电常数的异常是由于氧八面体的畸变导致的相转变(对称性降低)及第二相的生成造成的。未发生相转变前,介电常数的增大可用电介质理论加以解释;发生相转变后,介电常数呈线性下降趋势,符合对数混合定律。     

Dielectric medium

The concept of the generalized scattering amplitude is applied to the electromagnetic (EM) scattering of an arbitrarily shaped, perfectly conducting object partially immersed in a semi-infinite dielectric medium. The dielectric medium can have either electric loss or magnetic loss or both. In a two-dimensional (2-D) formulation, after the outgoing cylindrical wave is factored out from the scattered wave, the remaining wave envelope component in the scattered wave is defined as the generalized scattering amplitude. The transformed Helmholtz equation in terms of the generalized scattering amplitude can be solved numerically using a finite-difference method over the entire scattering domain including both the semi-infinite free-space (vacuum or air) and the semi-infinite dielectric medium. Example problems of scattering by infinitely long, perfectly conducting cylinders of circular and trapezoidal ship-shaped cross sections are solved to demonstrate the theoretical formulation and numerical method. The radial profiles of the generalized scattering amplitude and the total field over the entire scattering region are also presented, and their properties are discussed. The far-field bistatic cross section and induced current density on the obstacle's surface are also presented. These results show that the method can be used to yield complete and accurate solutions to 2-D EM scattering problems involving arbitrarily shaped metallic objects partially immersed in a penetrable semi-infinite dielectric medium     

Measurement of Low-Loss Dielectric Materials Using Dielectric Rod Resonator

To obtain the complex permittivity of low-loss dielectric materials at 60 GHz, a measurement method is developed. Using a dielectric rod resonator excited by a dielectric waveguide, effective conductivity of conducting plates for short circuiting the resonator is determined. The complex permittivity of the dielectric rod is determined by the resonant frequency and unloaded quality factor of the TE_0m1-mode resonator. Moreover, the complex permittivity of single crystal sapphire, polycrystalline ceramics, and cordierite has been investigated in virtue of numerical simulation. For all the measured specimens in this study, the proposed method is seen to provide much better accuracy for values.     

The Thermal Dielectric Quotient for Characterizing Dielectric Heat Conductors

If a piece of dielectric is mounted between two conductors, the resulting thermal conductance and electrical capacitance are related by their quotient which is a property of the material, independent of the size and shape. This quotient is expressed in watts per (picofarad X kelvin). It is helpful in the selection of a material for conducting heat while adding least capacitance. For example, a beryllia ceramic block of 1 pF can conduct about 4 W/K. The highest is a diamond of unusual perfection, about 40 W/K. A table and a nomogram give these properties for a variety of materials.     

薄膜绝缘层对陶瓷厚膜电致发光显示器件的影响

采用丝网印刷技术，在Al2O3陶瓷板上印刷、高温烧结内电极及绝缘层制备出陶瓷厚膜基板，进而制备了新型厚膜电致发光显示器（TDEL），整个器件结构为陶瓷基板／内电极／厚膜绝缘层／发光层／薄膜绝缘层／ITO透明电极。对用不同薄膜绝缘材料制备的显示器件的特性进行测试、比较、分析，结果表明薄膜绝缘介质层对器件的阈值电压、发光亮度均有一定的影响，以复合绝缘层的性能最优。最后对器件的衰减特性进行了初步分析。     

钛酸锌镁介质陶瓷的制备与介电性能

采用固相合成法制备了Mg0.22Zn0.78TiO3(简称MZT)化合物陶瓷粉体,研究了烧结助剂及Ca O掺杂对MZT介质陶瓷的烧结和介电性能的影响。实验结果表明,掺杂少量的Ca O能改善MZT陶瓷的介电性能,加入质量分数为10%烧结助剂,能获得一种能在较低温度下烧结的MZT系瓷料,烧结温度为1 000℃时,测得陶瓷样品的最佳介电性能:相对介电常数约为21,介质损耗小于1.5×10-4,介电常数温度系数符合C0G瓷料的要求。     

Composite Dielectric Waveguides

Composite dielectric waveguides, or a class of dielectric waveguides made of a few dielectric materials, are described. A composite circular dielectric waveguide (CCDW) is treated with the the point-matching method. Computed values of the propagation constant of the CCDW are compared with those of the homogeneous circular dielectric waveguides (HCDW). Microwave experiments carried out to comfirm the theory are discribed.     

Dielectric Image Lines

Some further studies on the dielectric image line are presented. Following a verification of field purity for the conventional image system, the effects of dielectric constant and dielectric geometry on loss, dispersion, and field extent are examined. Results are also discussed for an asymmetric line, i.e., the case of dielectric binding medium partially submerged in an image surface.     

Dielectric Waveguide Theory

We attempt a brief and broad overview and historical perspective of the theory of lightwave propagation in dielectric waveguides. This is a subject that is now documented by extensive literature. As our review task is limited by constraints in both space and time it will be illustrative rather than comprehensive. The illustrations are intended to highlight the principal concepts and theoretical approaches and refer the reader to the literature for detailed derivations and explanations. Our story celebrates a theory with a proud history of nearly 100 years, vibrant and rich in new ideas, and serving as the base for an increasing number of powerful applications.