基于注意力机制的多尺度融合图像超分辨率重建

针对图像超分辨率重建算法在信息恢复过程中存在特征提取不充分、重建高频细节能力不足等问题,在SRGAN的基础上提出了一种基于注意力机制的多尺度融合图像超分辨率重建算法(SRGAN-MCA)。首先,构建了一种基于坐标注意力机制的多尺度密集残差注意力模块来提取不同尺度的特征信息,以解决图像超分辨率重建非线性映射过程中特征提取不充分的问题;其次,通过在网络判别器中嵌入谱归一化来约束判别器的Lipschitz常数,以增强网络训练的稳定性;最后添加了Charbonnier损失函数对SRGAN-MCA进行训练优化,以实现更高质量重建。在Set5、Set14、BSD100数据集上的实验结果表明,与SRGAN相比,2倍和4倍放大重建图像的峰值信噪比(PSNR)平均提高了0.35 dB、0.47 dB,结构相似性(SSIM)平均提高了0.005 4、0.016。     

基于生成对抗网络的超声图像超分辨率重建

针对医学超声图像的分辨率低而导致视觉效果差的问题,使用基于神经网络的图像超分辨率(SR)重建方法提升医学超声图像的分辨率。采用针对自然图像超分辨率重建的生成对抗网络(SRGAN)作为基本方法,通过减少2个输入通道和删除1个残差块对该网络的结构进行更改,并且改进网络损失函数,新增模糊处理数据集,使该网络适应医学超声图像所具备的灰度图像、散斑纹理单一等特点,从而重建出放大4倍的边缘清晰没有伪影的医学超声图像。将改进SRGAN与原始SRGAN的结果相比,峰值信噪比(PSNR)和结构相似性(SSIM)分别有1.792 dB和3.907%的提升;与传统双立方插值的结果相比,PSNR和SSIM分别有2.172 dB和8.732%的提升。     

基于多尺度残差网络的CT图像超分辨率重建

为了将超分辨率重建算法应用于医学影像领域,提升各类医学影像的分辨率,针对当前主流算法网络结构和分辨率提升倍数的尺度单一性问题,提出了一种应用于CT图像的多尺度残差网络模型。首先,通过级联多层残差块构建模型框架,残差块内采用3种尺度的卷积核提取低分辨率图像的细节特征。然后,将特征图融合在一个维度进行特征映射和数据降维,并将多尺度特征信息导入下一残差块。最后,将网络学习到的残差图与低分辨率图像融合,重建高分辨率图像。采用经过多种放大倍数处理的CT图像对网络进行混合训练,实现了一个模型可以同时支持多种倍数的分辨率提升。实验结果表明:在2,3,4倍放大因子下,该模型重建的CT图像PSNR平均较VDSR算法高0.87,0.83,1.16dB。因此,本文模型有效提升了CT图像的超分辨率重建效果,更锐利地恢复了其细节特征,同时大大提升了算法实用性。     

基于卷积稀疏编码与生成对抗网络的图像超分辨率重建

针对现有图像超分辨率重建算法的重建图像仍存在高频信息缺失、噪点增多问题，本文提出了一种基于卷积稀疏编码与生成对抗网络的图像超分辨率重建模型。首先，利用卷积网络实现稀疏编码并获取图像稀疏表示，充分利用图像的先验信息，有效避免重建图像高频信息缺失和噪点增多的问题；在得到低分辨率图像的稀疏表示后，通过重建模块对稀疏表示进行重建得到超分辨率图像；随后，鉴别器对重建图像进行鉴别，缓解由PSNR主导的算法导致重建图像趋于平滑的问题。在不断对抗训练后，最后的重建图像具有更好的视觉效果。本文在Set5、Set14、BSD100和Urban100通用测试数据集上进行2倍和4倍的超分辨率重建实验，并与Bicubic、SRGAN、EDSR和ESRGAN对比。与ESRGAN方法相比，本文模型在4个数据集上平均PSNR提升约0.702 8 dB，平均SSIM提升约0.047，平均LPIPS提升了0.016。实验结果表明，所提出的模型具有较强的竞争力，能够恢复更多的细纹理细节且具有更好的清晰度。     

基于生成对抗网络的遥感图像超分辨率重建改进算法

为了获取包含更多高频感知信息与纹理细节信息的遥感重建图像，并解决超分辨率重建算法训练难和重建图像细节缺失的问题，提出一种融合多尺度感受野模块的生成对抗网络（GAN）遥感图像超分辨率重建算法。首先，使用多尺度卷积级联增强全局特征获取、去除GAN中的归一化层，提升网络训练效率去除伪影并降低计算复杂度；其次，利用多尺度感受野模块与密集残差模块作为生成网络的细节特征提取模块，提升网络重建质量获取更多细节纹理信息；最后，结合Charbonnier损失函数与全变分损失函数提升网络训练稳定性加速收敛。实验结果表明，所提算法在Kaggle、WHURS19、AID数据集上的平均检测结果较超分辨率GAN在峰值信噪比、结构相似性、特征相似性等方面分别高出约1.65 dB、约0.040(5.2%)、约0.010(1.1%)。     

基于深度卷积神经网络的红外图像超分辨率重建技术

由于器件及工艺等技术限制，红外图像分辨率相对可见光图像较低，存在细节纹理特征模糊等不足。对此，本文提出一种基于深度卷积神经网络（convolutional neural network,CNN）的红外图像超分辨率重建方法。该方法改进残差模块，降低激活函数对信息流影响的同时加深网络，充分利用低分辨率红外图像的原始信息。结合高效通道注意力机制和通道-空间注意力模块，使重建过程中有选择性地捕获更多特征信息，有利于对红外图像高频细节更准确地进行重建。实验结果表明，本文方法重建红外图像峰值信噪比（peak signal to noise ratio,PSNR）优于传统的Bicubic插值法以及基于CNN的SRResNet、EDSR、RCAN模型。当尺度因子为×2和×4时，重建图像的平均PSNR值比传统Bicubic插值法分别提高了4.57 dB和3.37 dB。     

基于特征复用的膨胀-残差网络的SAR图像超分辨重建

对于合成孔径雷达(SAR)图像,传统的超分辨重建方法对视觉特征的人为构造十分依赖,基于普通卷积神经网络(CNN)的超分辨重建方法对微小目标的重建能力较弱,对边缘轮廓的保真度较差。针对以上问题,该文提出一种基于特征复用的膨胀-残差卷积超分辨网络模型,同时引入感知损失,实现了精确的SAR图像4倍语义级超分辨。该方法为增加网络感受野,采用膨胀-残差卷积(DR-CNN)结构用于限制模型中特征图分辨率的严重损失,提高网络对微小细节的敏感度;为实现不同层级的特征最大化利用,将不同层级的特征图进行级联,形成一种特征复用结构(FRDR-CNN),以此大幅度提升特征提取模块的效率,进一步提升超分辨精度;针对SAR图像特殊的相干斑噪声干扰,引入感知损失,使得该方法在恢复图像边缘和精细的纹理信息方面具有优越表现。文中实验表明,与传统算法以及目前较为流行的几种全卷积神经网络超分辨重建算法相比,该文采用的FRDR-CNN模型在视觉上对小物体的超分辨重建能力更强,对边界等轮廓信息的重建更准确,客观指标中的峰值信噪比(PSNR)和结构相似性指数(SSIM)分别为33.5023 dB和0.5127,边缘保持系数(EPD-ROA)在水平和垂直方向上分别为0.4243和0.4373。      

基于改进生成对抗网络的单帧图像超分辨率重建

为了获得更好的图像超分辨率重建质量,提高网络训练的稳定性,对生成对抗网络、损失函数进行研究。首先,介绍了SRGAN和DenseNet,并设计了基于DenseNet的生成网络用以生成图像,且将子像素卷积模块加入到DenseNet中。接着,移除了原本DenseNet中冗余的BN层,提高了模型的训练效率。最后,介绍了SRGAN的损失函数并基于Earth-Mover距离来重新设计损失函数,并且用SmoothL1损失取代MSE损失来计算VGG特征图,以防止MSE放大最大误差和最小误差间的差距。实验证明:该模型在网络训练过程中能够达到稳定收敛的状态。重建出的图像质量对比SRGAN,在3个基准测试集SET5,SET14,BSD100上的平均PSNR要高约2.02dB,SSIM高约0.042(5.6%)。重建出的图像不仅在指标上有所提升,且拥有更好的清晰度,高频细节更为丰富。     

融合注意力的生成式对抗网络单图像超分辨率重建

基于深度学习的单图像超分辨率重建方法已经比较完善,重建图像具有较高的客观评价值或具有较好的视觉效果,但是图像感知效果和客观评价值不能均衡提升.针对这一问题,提出一种融合注意力的生成式对抗网络单图像超分辨率重建方法.首先去掉残差网络中会破坏图像原本的对比度信息、影响图像生成质量的批归一层,其次是构造注意力卷积神经网络残差块,可有效地在特征映射中进行自适应特征细化,改善重建结果在大尺度因子下缺乏高频信息和纹理细节的问题,最后构造像素损失函数,使用鲁棒性较好的Charbonnier损失函数替代均方差损失函数,用总变差正则项平滑训练结果.实验结果表明,在4倍放大因子下,与其他方法在Set5、Set14、Urban100、BSDS100测试集上进行测试比较,本文方法峰值信噪比平均值提升2.88 dB,结构相似性平均值提升0.078.实验数据和效果图表明,该方法主观上具有丰富的细节,客观上具有较高的峰值信噪比值和结构相似性值,实现了视觉效果和客观评价指标值的均衡提升.     

基于局部路径特征信息神经网络的图像去噪

图像去噪旨在减少或消除噪声对图像的影响,这一过程往往会有高频细节信息的丢失。为了在去除图像噪声的同时保护图像的边缘信息与纹理细节,本文提出了一种能够连接图像局部路径信息的神经网络,该网络训练完成后可以直接对含噪声图像进行降噪,不需要对图像进行预处理。本文提出的神经网络包括3个部分特征提取层、信息连接模块、信息重建层。信息连接模块是该网络的关键部分,通过残差学习连接局部长路径和局部短路径的特征信息。实验结果表明,经本文处理后的图像在有参考的图像质量评价指标PSNR和SSIM上均有明显提升,PSNR最高可以达到34.87 dB,SSIM可以达到0.87以上;在无参考的图像质量评价指标BRISQUE和NIQE上均有明显下降。本文算法对不同水平、不同种类的算法都有相对较好的效果,且性能优于一般算法,在去噪工作中有一定的实用价值。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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