利用高阶累积量实现数字调制信号的自动识别

通信信号的自动调制识别在截获信号处理方面是一个十分重要的课题。本文针对数字调制信号的识别问题，提出了一种基于高阶累积量的分类特征，该特征有效地抑制高斯白噪声的影响，能实现对2ASK、4ASK、4PSK、2FSK、4FSK等五种数字调制信号的识别。论文进行了理论推导，并用仿真实验和实际采集数据进行了验证。     

利用幅度特性对数字信号调制方式进行识别

数字调制方式的识别对于通信信号分析有着重要的作用。针对数字信号（2ASK,4ASK,2PSK,4PSK,2FSK和4FSK）的调制方式,本文提出了一种只利用调制信号瞬时幅度特性便可以对调制信号进行识别的新算法,利用特征参数提取与决策树分类器结合对以上6种数字信号进行调制识别。首先提出了使用希尔伯特变换和解析函数对数字信...     

基于决策论的数字调制信号识别方法

以决策论为基础提出了一种改进的数字调制信号识别方法,该方法仅需4个相对简单的特征参数,就能识别2ASK、4ASK、2FSK、4FSK、2PSK、4PSK和16QAM这7种数字调制信号。仿真结果表明,该方法复杂度较低,识别正确率有较大提高,尤其对于2ASK、4ASK、MPSK/MFSK及16QAM的识别,在信噪比较低的情况下,具有较好的识别效果。     

基于高阶累积量和神经网络的数字调制识别

针对数字调制信号的识别问题,提出了一种基于高阶累积量的分类特征,该特征有效地抑制高斯白噪声的影响,能实现对2ASK、4ASK、4PSK、2FSK、4FSK等五种数字调制信号的识别。分类器采用了多层组合的神经网络分类器,不需要设定判决门限,而且在收敛速度、训练时间以及识别率方面都有很大改进。仿真结果表明,在信噪比大于7 dB时,系统的正确识别率可达95%以上。     

利用高阶累积量实现数字调制信号的识别

文中提出一种基于高阶累积量识别多种数字调制信号的算法。首先推导计算各信号的八阶累积量,从二、八阶累积量中提取一个特征参数,实现以更少参数识别更多信号的目的;然后,为提高MFSK的识别率,从微分后MFSK信号的四、六阶累积量中提取一个特征参数完成识别。仿真结果显示,通过利用这两个参数可以实现2 ASK/BPSK、4 ASK、8 ASK、QPSK、8 PSK、2 FSK、4 FSK、8 FSK、16 QAM、64 QAM等多种数字调制信号的识别。     

基于瞬时幅度与小波分析相结合的数字调制制式的自动识别

本文提出了一种基于信号瞬时幅度与小波分析相结合的数字调制制式的自动识别新算法。该算法计算简单、实时性强,能够成功识别2ASK、4ASK、2FSK、4FSK及2PSK5种信号。仿真结果表明,该算法具有较高的识别率。     

差分运算在数字调制制式识别中的应用

随着数字通信技术的发展，数字信号调制制式的识别成为近年来的研究热点，本文将差分运算应用到数字调制制式的自动识别当中，设计了一种新的算法，能够成功识别2ASK，4ASK，2FSK，4FSK及2PSK五种信号。仿真结果表明，该算法具有较高的识别率。     

基于循环谱和高阶累积量的联合模式识别方法

为完全识别当前卫星通信采用的主要调制方式,结合循环谱和高阶累积量两种信号调制识别方法的特点,提出了一种联合识别算法。该算法将循环谱特征加入到高阶累积量识别法中,联合多种特征参数判决构建识别器,首先利用循环谱完成ASK、FSK、PSK信号的类间识别以及FSK信号的类内识别,在此基础上利用高阶累积量方法完成FSK、PSK信号的类内识别。仿真结果表明,该算法能够完全区分卫星通信中主要的调制模式{ASK、2ASK、2FSK、4FSK、BPSK、QPSK},在信噪比高于5 d B时识别率达88%以上。     

基于BP神经网络的数字调制信号样式自动识别

针对2ASK，4ASK，2FSK，4FSK，BPSK和QPSK六种数字调制信号，给出了对他们进行识别的5种特征参数的定义，提出了基于BP神经网络利用较少样本分3步进行训练，来实现对数字信号调制样式自动识别的方法，最后得到了在信噪比≥8dB时较高的正确识别率。     

特征提取及其在数字调制方式识别中的应用

通信信号调制识别技术在军事和民用领域都具有重要的应用前景,而特征参数的提取是调制方式识别的首要问题。本文提出了两个新的特征参数,并结合这两个新的特征参数在统计模式识别的基础上构造了一组新的特征集参数,该特征集无需任何先验知识。随后,本文针对2PSK、QPSK、8PSK、16QAM、2FSK、4FSK、8FSK、2ASK、4ASK等9种调制类型,采用了分层结构的神经网络分类器进行自动识别。大量仿真表明,在待识别的信号信噪比大于5dB时,该识别系统的正确识别率达97%以上,且识别的稳定性好。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its