Srn+1TinO3n+1 (n=1, 2) microwave dielectric ceramics with medium dielectric constant and ultra‐low dielectric loss

Sr_n+1Ti_nO_3n+1 (n=1, 2) ceramics with tetragonal Ruddlesden–Popper structure were prepared via a standard solid‐state reaction process, and their microstructures and microwave dielectric properties were investigated systematically. The phase composition, grain morphology, and densification behavior were explored using X‐ray diffraction (XRD) and scanning electron microscopy (SEM). Outstanding microwave dielectric properties were achieved in the present ceramics: ε_r=42, Q × f=145 200 GHz, τ_f=130 ppm/°C for Sr₂TiO₄, and ε_r=63, Q × f=84 000 GHz, τ_f=293 ppm/°C for Sr₃Ti₂O₇, respectively. The present ceramics might be expected as excellent candidates for next‐generation medium‐permittivity microwave dielectric ceramics after the further optimization of τ_f value.     

Microstructure,Ferroelectric, Piezoelectric,and Ferromagnetic Properties of Sc‐Modified BiFeO3–BaTiO3 Multiferroic Ceramics with MnO2 Addition

0.725BiFe_1?xSc_xO₃–0.275BaTiO₃ + y mol% MnO₂ multiferroic ceramics were fabricated by a conventional ceramic technique and the effects of Sc doping and sintering temperature on microstructure, multiferroic, and piezoelectric properties of the ceramics were studied. The ceramics can be well sintered at the wide low sintering temperature range 930°C–990°C and possess a pure perovskite structure. The ceramics with x/y = 0.01–0.02/1.0 sintered at 960°C possess high resistivity (~2 × 10⁹ Ω·cm), strong ferroelectricity (P_r = 19.1–20.4 μm/cm²), good piezoelectric properties (d₃₃ = 127–128 pC/N, k_p = 36.6%–36.9%), and very high Curie temperature (618°C–636°C). The increase in sintering temperature improves the densification, electric insulation, ferroelectric, and piezoelectric properties of the ceramics. A small amount of Sc doping (x ≤ 0.04) and the increase in the sintering temperature significantly enhance the ferromagnetic properties of the ceramics. Improved ferromagnetism with remnant magnetization M_r of 0.059 and 0.10 emu/g and coercive field H_c of 2.51 and 2.76 kOe are obtained in the ceramics with x/y = 0.04/1.0 (sintered at 960°C) and 0.02/1.0 (sintered at 1050°C), respectively. Because of the high T_C (636°C), the ceramic with x/y = 0.02/1.0 shows good temperature stability of piezoelectric properties. Our results also show that the addition of MnO₂ is essential to obtain the ceramics with good electrical properties and electric insulation.     

Thermally stable large strain in low-loss (Na0.2K0.8)NbO3-BaZrO3 for multilayer actuators

CuO-doped (1–x)(Na_0.2K_0.8)NbO₃-xBaZrO₃ ceramics (0.0 ≤ x ≤ 0.06) were densified at 960°C. The ceramic with x = 0 exhibited a large sprout-shaped strain vs electric-field (S-E) curve and a double polarization vs electric-field (P-E) hysteresis curve, owing to the defect polarization (P_D) developed between Cu²⁺ ions at Nb⁵⁺ sites and oxygen vacancies. The sizes of the S-E and P-E loops decreased with increasing x, owing to the decrease in the number of P_Ds. The ceramic with x = 0.04 displayed small S-E and P-E curves, indicating its small dielectric loss. It exhibited large strain (0.19% at 8.0 kV/mm) at room temperature, which was maintained at 200°C. A similar strain was observed after applying 10⁶ cycles of an electric field (3.0 kV/mm). Hence, this specimen exhibited large strain with excellent thermal and fatigue properties. Moreover, the synthesized multilayer actuator using the ceramic with x = 0.04 showed excellent vibrational properties, making it promising for applications in multilayer piezoelectric actuators.     

Thermal stability and electric‐field‐induced strain behaviors for PIN‐PSN‐PT piezoelectric ceramics

Pb (In_1/2Nb_1/2) O₃‐Pb (Sc_1/2Nb_1/2) O₃‐PbTiO₃ (PIN‐PSN‐PT) ternary ceramics with compositions near morphotropic phase boundary (MPB) were fabricated by solid‐state‐sintering process. Dielectric and piezoelectric properties of xPIN‐yPSN‐zPT (x = 0.19, 0.23 and z = 0.365, 0.385) ceramics were investigated as a function of temperature, showing high T_r‐t and T_c on the order of 160 ~ 200°C and 280 ~ 290°C, respectively. The xPIN‐yPSN‐0.365PT (x = 0.19 and 0.23) ceramics do not depolarize at the temperature up to 200°C, showing a better thermal stability when compared to the state‐of‐the‐art relaxor‐PbTiO₃ systems. A slight variation (<9%) of k_p, k_t, and k₃₃ was observed in the temperature range of 25°C‐160°C for xPIN‐yPSN‐0.385PT (x = 0.19 and 0.23) ceramics. Rayleigh analysis was employed to quantify the contribution of domain wall motion to piezoelectric response, where the domain wall contribution was found to increase with composition approaching MPB for PIN‐PSN‐PT system.     

Large enhancement of piezoelectric properties and resistivity in Cu/Ta co-doped Bi4Ti3O12 high-temperature piezoceramics

In this study, the electrical properties of Bi₄Ti₃O₁₂-based Aurivillius-type ceramics were tailored by a B-site co-doping strategy combining high valence Ta⁵⁺ and low valence Cu²⁺. A series of Bi₄Ti_3−x(Cu_1/3Ta_2/3)_xO₁₂ (BTCT) (x = 0, 0.005, 0.01, 0.015, 0.02, 0.025, and 0.03) ceramics were prepared by the conventional solid-state reaction method. The effect of Cu/Ta co-doping on the crystal structure, microstructure, dielectric properties, piezoelectric properties, ferroelectric properties, and electrical conductivity of these ceramics was systematically investigated. Co-doping significantly enhanced the piezoelectric properties and DC electrical resistivity of the resulting composites. The optimized comprehensive performances were obtained at x = 0.015 with a large piezoelectric coefficient (34 pC/N) and a relatively high resistivity of 9.02 × 10⁶ Ω cm at 500°C. Furthermore, the ceramic also exhibited stable thermal annealing behaviors and excellent fatigue resistance. The results of this study demonstrated great potential of the Cu/Ta co-doped Bi₄Ti₃O₁₂ ceramics for high-temperature piezoelectric device applications.     

Low‐Temperature Sintering of Bi0.5(Na,K)0.5TiO3 for Multilayer Ceramic Actuators

We investigated the influence of CuO amount (0.5–3.0 mol%), sintering temperature (900°C–1000°C), and sintering time (2–6 h) on the low‐temperature sintering behavior of CuO‐added Bi_0.5(Na_0.78K_0.22)_0.5TiO₃ (BNKT22) ceramics. Normalized strain (S_max/E_max), piezoelectric coefficient (d₃₃), and remanent polarization (P_r) of 1.0 mol% CuO‐added BNKT22 ceramics sintered at 950°C for 4 h was 280 pm/V, 180 pC/N, and 28 μC/cm², respectively. These values are similar to those of pure BNKT22 ceramics sintered at 1150°C. In addition, we investigated the performance of multilayer ceramic actuators made from CuO‐added BNKT22 in acoustic sound speaker devices. A prototype sound speaker device showed similar output sound pressure levels as a Pb(Zr,Ti)O₃‐based device in the frequency range 0.66–20 kHz. This result highlights the feasibility of using low‐cost multilayer ceramic devices made of lead‐free BNKT‐based piezoelectric materials in sound speaker devices.     

Ultrahigh energy storage density and charge-discharge performance in novel sodium bismuth titanate-based ceramics

Lead-free ferroelectric ceramics are very suitable for electrostatic energy storage capacitors due to their outstanding characteristics of high charge-discharge speed, high power density, and environmental friendliness. Herein, a novel material system as (1−x)Na_0.5Bi_0.5TiO₃-xCaZr_0.5Ti_0.5O₃ (NBT-CZT, x = 0, 0.05, 0.10, 0.12, 0.15, and 0.20) was designed and prepared for dielectric energy storage ceramics. It demonstrated that the CZT additives induced a phase transition for the NBT ceramics, from ferroelectric to relaxor ferroelectric. In particular, extremely high stored energy storage density (6.92 and 5.37 J/cm³), high recoverable energy storage density (4.77 and 4.37 J/cm³), and moderate efficiency (69.0% and 81.4%) were achieved in both the samples of x = 0.12 and x = 0.15, respectively. The ceramics exhibited excellent stability of energy storage performance covering a wide temperature (25°C–200°C) and frequency (0.5–50 Hz) range, and also fatigue cycles up to 10⁵. Additionally, the NBT-CZT ceramics had a fast discharge speed (t_0.9 < 100 ns) and high power density (24.2 MW/cm³, E = 100 kV/cm, x = 0.15), and the charge-discharge process remained stable even when the measured temperature was up to 160°C. Therefore, the NBT-CZT ceramics have the potential to be utilized in electrostatic energy storage applications.     

Effects of cerium on structures and electrical properties of (Nb,Ta) modified Bi4Ti3O12 piezoelectric ceramics

Bi₄Ti₃O₁₂ high-temperature piezoelectric ceramics composed of 0.03 mol (Nb, Ta)⁵⁺ substituting B site and x mol CeO₂ (x = 0–0.05, abbreviated as BCTNT100x) substituting A site were synthesized by the conventional solid-state reaction method. The effects of Ce additive on the structures and electrical properties of resulting Bi₄Ti₃O₁₂-based ceramics were systematically investigated. In-situ temperature-dependent X-ray diffraction (XRD) confirmed that the phase structure of BCTNT100x ceramics change from orthorhombic structure to tetragonal structure as temperature increased. The ceramics at Ce content x = 0.03 illustrated optimal performances with superior piezoelectric constant (d₃₃ = 36.5 pC/N), high Curie temperature (T_C = 649 °C), and large remanent polarization (2P_r = 21.6 μC/cm²). BCTNT3 ceramics also possessed high d₃₃ of 32.5 pC/N at an annealing temperature of 600°C, with electrical resistivity preserved at 10⁶ Ω cm at 500 °C. These results demonstrate that BCTNT100x ceramics can be used as high-temperature piezoelectric devices.     

High-temperature BiFeO3–PbTiO3-Ba(Zr,Ti)O3 ternary ceramics with excellent piezoelectricity

Ternary ceramics of (0.87−x)BiFeO₃–xPbTiO₃–0.13Ba(Zr_0.5Ti_0.5)O₃ (BF–xPT–0.13BZT, 0.27 ≤ x ≤ 0.37) were prepared by the traditional solid state reaction methods. X-ray diffraction results display that BF-xPT-0.13BZT ternary ceramics of x ≥ 0.29 exhibit the perovskite structure with dominant tetragonal (T) phases mixed with a small amount of rhombohedral (R) phases. Scanning electron microscopy (SEM) images reveal that the average grain size of BF-xPT-0.13BZT ternary ceramics is in a range of 10–11 μm, increasing first and then decreasing with the increase of PbTiO₃ (PT) content. The low tanδ of about 0.015 and high Curie temperature T_c of above 450°C were obtained for BF-xPT-0.13BZT ternary ceramics. Moreover, the fluctuation of piezoelectric coefficient d₃₃ is less than ±10% over a broad temperature range of 30°C–400°C. BF-xPT-0.13BZT ternary ceramics for x = 0.33 possess the maximum T_c and d₃₃ of 470°C and 320 pC/N respectively, with the room temperature resistivity of about 10¹¹ Ω·cm. These results indicate that BF-xPT-0.13BZT ternary ceramics for x = 0.33 with both excellent piezoelectric properties and high Curie temperature have promising applications in high-temperature piezoelectric devices.     

Improved thermal stability of the piezoelectric properties of (Li,Ag)‐co‐modified (K,Na) NbO3‐based ceramics prepared by spark plasma sintering

High‐performance lead‐free piezoelectric ceramics 0.94(K_0.45Na_0.55)_1?xLi_x(Nb_0.85Ta_0.15)O₃–0.06AgNbO₃ (KNNLTAg‐x) were successfully prepared by spark plasma sintering technique. The doping effect of Li on the structural and electrical properties of KNNLTAg‐x (x=0, 0.02, 0.04, 0.06, 0.08 and 0.10) ceramics was studied. The lattice structure, ferroelectric and piezoelectric properties of the KNLNTAg‐x ceramics are highly dependent on the Li doping level. In particular, the Li dopant has a great impact on both Curie temperature T_c and orthorhombic‐tetragonal transition temperature T_O‐T. The 4% Li‐doped sample exhibited relatively high T_O‐T of 95°C, leading to a stable dynamic piezoelectric coefficient (d₃₃*) of 220‐240 pm/V in a broad temperature range from 25°C to 105°C. Additionally, the 2% Li‐doped sample shows a high d₃₃* of 320 pm/V at 135°C, suggesting its great potential for high‐temperature applications.     

Crystal structure,phase compositions,and microwave dielectric properties of malayaite-type Ca1−xSrxSnSiO5 ceramics

Low-permittivity Ca_1−xSr_xSnSiO₅ (0 ≤ x ≤ 0.45) microwave dielectric ceramics were prepared via traditional state-reaction at 1400°C-1450°C for 5 hours. Moreover the microwave dielectric properties of SnO₂ ceramic were obtained for the first time. SnO₂ ceramic was difficult to densify, and SnO₂ ceramic (ρ_rel = 65.1%) that was sintered at 1525°C exhibited the optimal microwave dielectric properties of ε_r = 5.27, Q × f = 89 300 GHz (at 14.5 GHz), and τ_f = −26.7 ppm/°C. For Ca_1−xSr_xSnSiO₅ (0 ≤ x ≤ 0.15) ceramics, Sr²⁺ could be dissolved in the Ca²⁺ site of Ca_1−xSr_xSnSiO₅ to form a single phase, and the partial substitution of Ca²⁺ by Sr²⁺ could improve the microwave dielectric properties of CaSnSiO₅ ceramic. Secondary phases (SnO₂ and SrSiO₃) appeared at 0.2 ≤ x ≤ 0.45 and could adjust the abnormally positive τ_f value of CaSnSiO₅ ceramic. The highest Q × f value (60 100 GHz at 10.4 GHz) and optimal microwave dielectric properties (ε_r = 9.42, Q × f = 47 500 GHz at 12.4 GHz, and τ_f = −1.2 ppm/°C) of Ca_1−xSr_xSnSiO₅ ceramics were obtained at x = 0.05 and 0.45, respectively.     

Properties and structures of nonstoichiometric (K,Na)NbO3‐based lead‐free ceramics

The 0.968[(K_0.48Na_0.52)]Nb_0.95+xSb_0.05O₃–0.032(Bi_0.5Na_0.5)ZrO₃ [KNN_xS–BNZ] lead‐free ceramics with nonstoichiometric niobium ion were fabricated via conventional solid‐state sintering technique and their piezoelectric, dielectric and ferroelectric properties were investigated. When x = 0.010, enhanced piezoelectric properties (d₃₃ ≈ 421 pC/N and k_p ≈ 0.47) were obtained due to the construction of rhombohendral—tetragonal phase boundary near room temperature. The KNN_xS–BNZ ceramics possesses enhanced Curie temperature (T_c) with improved piezoelectric constant. A large d₃₃ of ~421 pC/N and a high T_c ~256°C can be simultaneously induced in the ceramics with x = 0.010. Especially, good thermal stability was observed in a broad temperature range. The results indicated that our work could benefit development of KNN‐based ceramics and widen their application range.     

Liquid‐phase sintering,microstructural evolution,and microwave dielectric properties of Li2Mg3SnO6–LiF ceramics

The liquid‐phase sintering behavior and microstructural evolution of x wt% LiF aided Li₂Mg₃SnO₆ ceramics (x = 1‐7) were investigated for the purpose to prepare dense phase‐pure ceramic samples. The grain and pore morphology, density variation, and phase structures were especially correlated with the subsequent microwave dielectric properties. The experimental results demonstrate a typical liquid‐phase sintering in LiF–Li₂Mg₃SnO₆ ceramics, in which LiF proves to be an effective sintering aid for the Li₂Mg₃SnO₆ ceramic and obviously reduces its optimum sintering temperature from ~1200°C to ~850°C. The actual sample density and microstructure (grain and pores) strongly depended on both the amount of LiF additive and the sintering temperature. Higher sintering temperature tended to cause the formation of closed pores in Li₂Mg₃SnO₆‐x wt% LiF ceramics owing to the increase in the migration ability of grain boundary. An obvious transition of fracture modes from transgranular to intergranular ones was observed approximately at x = 4. A single‐phase dense Li₂Mg₃SnO₆ ceramic could be obtained in the temperature range of 875°C‐1100°C, beyond which the secondary phase Li₄MgSn₂O₇ (<850°C) and Mg₂SnO₄ (>1100°C) appeared. Excellent microwave dielectric properties of Q × f = 230 000‐330 000 GHz, ε_r = ~10.5 and τ_f = ~?40 ppm/°C were obtained for Li₂Mg₃SnO₆ ceramics with x = 2‐5 as sintered at ~1150°C. For LTCC applications, a desirable Q × f value of ~133 000 GHz could be achieved in samples with x = 3‐4 as sintered at 875°C.     

Remarkable piezoelectricity and stable high‐temperature dielectric properties of quenched BiFeO3–BaTiO3 ceramics

Effects of quenching process on dielectric, ferroelectric, and piezoelectric properties of 0.71BiFeO₃?0.29BaTiO₃ ceramics with Mn modification (BF–BT?xmol%Mn) were investigated. The dielectric, ferroelectric, and piezoelectric properties of BF–BT?xmol%Mn were improved by quenching, especially to the BF–BT?0.3 mol%Mn ceramics. The dielectric loss tanδ of quenched BF–BT?0.3 mol%Mn ceramics was only 0.28 at 500°C, which was half of the slow cooling one. Meanwhile, the remnant polarization P_r of quenched BF–BT?0.3 mol%Mn ceramics increased to 21 μC/cm². It was notable that the piezoelectric constant d₃₃ of quenched BF–BT?0.3 mol%Mn ceramics reached up to 191 pC/N, while the T_C was 530°C, showing excellent compatible properties. The BF–BT?xmol%Mn system ceramics showed to obey the Rayleigh law within suitable field regions. The Rayleigh law results indicated that the extrinsic contributions to the dielectric and piezoelectric responses of quenched BF–BT?xmol%Mn ceramics were larger than the unquenched ceramics. These results presented that the quenched BF–BT?xmol%Mn ceramics were promising candidates for high‐temperature piezoelectric devices.     

Processing of 0.55(Ba0.9Ca0.1)TiO3-0.45Ba(Sn0.2Ti0.8)O3 lead-free ceramics with high piezoelectricity

We report a large piezoelectric constant (d₃₃), 720 pC/N and converse piezoelectric constant (d₃₃^*), 2215 pm/V for 0.55(Ba_0.9Ca_0.1)TiO₃-0.45Ba(Sn_0.2Ti_0.8)O₃ ceramics; the biggest value achieved for lead-free piezoceramics so far. The ceramic powders were calcined between 1050°C-1350°C and sintered at 1480°C. The best properties were obtained at a calcination temperature (CT) of 1350°C. The fitting combination of processing and microstructural parameters for example, initial powder particle size >2 µm, ceramics density ~95%, and grain size ~40 µm led to a formation of orthorhombic-tetragonal-pseudo-cubic (O-T-PC) mixed phase boundary near room temperature, supported by Raman spectra, pointed to the extremely high piezoelectric activity. These conditions significantly increase piezoelectric constants, together with high relative permittivity (ε_r) >5000 and a low loss tangent (tan δ) of 0.029. In addition, the d₃₃ value stabilizes in the range of 400-500 pC/N for all samples calcined between 1050°C and 1250°C. The results entail that the (Ba,Ca)(Sn,Ti)O₃ ceramics are strong contenders to be a substitute for lead-based materials for room temperature applications.     

Enhanced insulating and piezoelectric properties of BiFeO3-BaTiO3-Bi0.5Na0.5TiO3 ceramics with high Curie temperature

BiFeO₃-BaTiO₃ ceramics are promising lead-free piezoelectric ceramics due to their high piezoelectric properties and high Curie temperature, but their high leakage current density makes the poling difficult. In this study, a decreased leakage current density by three orders of magnitude was obtained in Bi_0.5Na_0.5TiO₃ (BNT) added 0.67BiFeO₃-0.33BaTiO₃ (BF-BT) ceramics. It was found that the largely improved insulating properties benefit from the reduced oxygen vacancies and weak reduction of Fe³⁺ to Fe²⁺ as confirmed by photoluminescence and X-ray photoelectron spectroscopy measurements, thereby contributing to high-temperature and high-field poling. In addition, the introduction of BNT leaded to increased grain size. Due to the grown grains as well as reduced oxygen vacancies and Fe²⁺, enhanced insulating and optimal piezoelectric properties with P_r = 24.2 µC/cm², d₃₃ = 183 pC/N, k_p = 0.28, and T_C = 467°C were achieved in BF-BT-0.05BNT ceramics.     

Preparation and Electric Properties of Bi0.5Na0.5TiO3–Bi(Al0.5Ga0.5)O3 Lead‐Free Piezoceramics

A new lead‐free BNT‐based piezoelectric ceramics of (1 ? x)Bi_0.5Na_0.5TiO₃–xBi(Al_0.5Ga_0.5)O₃ (x = 0, 0.02, 0.03, 0.04, and 0.05) were synthesized using a conventional ceramic fabrication method. Their structures and electrical properties were investigated. All the samples show a typical ferroelectric P(E) loops and S(E) curves at room temperature. The optimal properties are obtained at the composition of the x = 0.03. The substitution of Bi(Al_0.5Ga_0.5)O₃ enhances piezoelectric constant and increases Curie temperature from 58 pC/N and 310°C of pure BNT to 93 pC/N and 325°C of the x = 0.03. The temperature‐dependent P(E) loops and S(E) curves of 0.97BNT–0.03BAG indicate that phase transition from ferroelectric to antiferroelectric takes place over a very wide temperature region from 80°C to 180°C. The results show that the introduction of BAG improves the electrical properties of BNT.     

Structure Evolution and Electrical Properties of Y3+‐Doped Ba1−xCaxZr0.07Ti0.93O3 Ceramics

Lead free piezoelectric ceramics of Y³⁺‐doped Ba_1?xCa_xZr_0.07Ti_0.93O₃ with x = 0.05, 0.10, and 0.15 were prepared. Composition and temperature‐dependent structural phase evolution and electrical properties of as‐prepared ceramics were studied systematically by X‐ray diffraction, Raman spectroscopy, impedance analyzer, ferroelectric test system, and unipolar strain measurement. Composition with x = 0.10 performs a good piezoelectric constant d₃₃ of 363 pC/N, coercive field E_c of 257 V/mm, remanent polarization P_r of 14.5 μC/cm², and a Curie temperature T_m of 109°C. High‐resolution X‐ray diffraction was introduced to indicate presence of orthorhombic phase. Converse piezoelectric constant d₃₃* of x = 0.10 composition performed better temperature stability in the range from 50°C to 110°C. That means decreasing orthorhombic–tetragonal phase transition temperature could be an effective way to enlarge its operating temperature range.     

Structure,Ferroelectric, Piezoelectric,and Ferromagnetic Properties of BiFeO3‐BaTiO3‐Bi0.5Na0.5TiO3 Lead‐Free Multiferroic Ceramics

Lead‐free multiferroic ceramics of BiFeO₃‐BaTiO₃‐Bi_0.5Na_0.5TiO₃ have been prepared by a conventional ceramic technique. The microstructure, multiferroic, and piezoelectric properties of the ceramics have been studied. The ceramics sintered at 1000°C for 2 h possess a pure perovskite structure and a morphotropic phase boundary of rhombohedral and tetragonal phases is formed at x = 0.02. After the addition of Bi_0.5Na_0.5TiO₃, two dielectric anomalies are observed at high temperatures (T_m ~ 510°C–570°C and T₂ ~ 720°C). The phase transition around T_m becomes wider gradually with increasing x. The ferroelectricity, piezoelectricity, and ferromagnetism of the ceramics are significantly improved after the addition of Bi_0.5Na_0.5TiO₃. High resistivity (~1.3 × 10⁹ Ω·cm), strong ferroelectricity (P_r = 27.4 μC/cm²), good piezoelectricity (d₃₃ =140 pC/N, k_p = 31.4%), and weak magnetic properties (M_r =0.19 emu/g) are observed.     

Structure and microwave dielectric characteristics of Sr2[Ti1−x(Al0.5Nb0.5)x]O4 (x ≤ 0.50) ceramics

Sr₂[Ti_1−x(Al_0.5Nb_0.5)_x]O₄ (x = 0, 0.10, 0.25, 0.30, 0.5) ceramics were synthesized by a standard solid-state reaction process. Sr₂[Ti_1−x(Al_0.5Nb_0.5)_x]O₄ solid solutions with tetragonal Ruddlesdon-Popper (R-P) structure in space group I4/mmm were obtained within x ≤ 0.50, and only minor amount (1-2 wt%) of Sr₃Ti₂O₇ secondary phase was detected for the compositions x ≥ 0.25. The temperature coefficient of resonant frequency τ_f of Sr₂[Ti_1−x(Al_0.5Nb_0.5)_x]O₄ ceramics was significantly improved from 132 to 14 ppm/°C correlated with the increase in degree of covalency (%) with increasing x. The dielectric constant ɛ_r decreased linearly with increasing x, while high Qf value was maintained though it decreased firstly. The variation tendency of Qf value was dependent on the trend of packing fraction combined with the microstructure. Good combination of microwave dielectric properties was achieved for x = 0.50: ɛ_r = 25.1, Qf = 77 580 GHz, τ_f = 14 ppm/°C. The present ceramics could be expected as new candidates of ultra-high Q microwave dielectric materials without noble element such as Ta.