Large enhancement of piezoelectric properties and resistivity in Cu/Ta co-doped Bi4Ti3O12 high-temperature piezoceramics

In this study, the electrical properties of Bi₄Ti₃O₁₂-based Aurivillius-type ceramics were tailored by a B-site co-doping strategy combining high valence Ta⁵⁺ and low valence Cu²⁺. A series of Bi₄Ti_3−x(Cu_1/3Ta_2/3)_xO₁₂ (BTCT) (x = 0, 0.005, 0.01, 0.015, 0.02, 0.025, and 0.03) ceramics were prepared by the conventional solid-state reaction method. The effect of Cu/Ta co-doping on the crystal structure, microstructure, dielectric properties, piezoelectric properties, ferroelectric properties, and electrical conductivity of these ceramics was systematically investigated. Co-doping significantly enhanced the piezoelectric properties and DC electrical resistivity of the resulting composites. The optimized comprehensive performances were obtained at x = 0.015 with a large piezoelectric coefficient (34 pC/N) and a relatively high resistivity of 9.02 × 10⁶ Ω cm at 500°C. Furthermore, the ceramic also exhibited stable thermal annealing behaviors and excellent fatigue resistance. The results of this study demonstrated great potential of the Cu/Ta co-doped Bi₄Ti₃O₁₂ ceramics for high-temperature piezoelectric device applications.     

Enhanced electrical properties related to structural distortion of CaBi2Nb2O9-based piezoelectric ceramics

CaBi₂Nb₂O₉ (CBN)-based high Curie temperature piezoelectric ceramics with formula Ca_0.8-xSr_x(Li_0.5Ce_0.15Bi_0.35)_0.2Bi₂Nb_1.94Ta_0.04W_0.02O₉ were prepared by conventional solid-state reaction method. The effects of strontium substitution for calcium in CBN pseudo-perovskite structure A-site were systematically studied. Results showed that the addition of Sr²⁺ ions lead to an improvement of the tetragonality of lattice structure, which resulted in an enhancement of piezoelectric and ferroelectric properties together with high Curie temperature T_C and good resistance to thermal depolarization. The analysis of dielectric spectrums revealed that the space charge polarization induced an additional dielectric anomaly occurred below T_C. The composition with x = 0.025 showed good integrated performance, the piezoelectric coefficient d₃₃ and T_C were ~17.5 pC/N and ~917°C, respectively. Even though the as-studied ceramics underwent high depolarizing temperature reached up to 875°C, d₃₃ decreased by 8% merely. The remanent polarization 2P_r and the resistivity ρ at 650°C were on the order of ~10 μC/cm² and 3 × 10⁵ Ω cm, respectively.     

Enhanced piezoelectric properties of Mn-modified Bi5Ti3FeO15 for high-temperature applications

Bi₅Ti₃FeO₁₅ (BTF) has recently attracted considerable interest as a typical multiferroic oxide, wherein ferroelectric and magnetic orders coexist. The ferroelectric order of BTF implies its piezoelectricity, because a ferroelectric must be a piezoelectric. However, no extensive studies have been carried out on the piezoelectric properties of BTF. Considering its high ferroelectric-paraelectric phase transition temperature (T_c ~ 761°C), it is necessary to analyze the piezoelectricity and thermal stabilities of BTF, a promising high-temperature piezoelectric material. In this study, lightly manganese-modified BTF polycrystalline oxides are fabricated by substituting manganese ions into Fe³⁺ sites via the conventional solid-state reaction method. X-ray diffraction and Raman spectroscopy analyses reveal that the resultant manganese-modified BTF has an Aurivillius-type structure with m = 4, and that the substitutions of Fe by Mn lead to a distortion of BO₆. The temperature-dependent dielectric properties and direct-current (DC) resistivity measurements indicate that the Mn ions can significantly reduce the dielectric loss tanδ and increase the DC resistivity. The piezoelectricity of BTF is confirmed by piezoelectric constant d₃₃ measurements; it exhibits a piezoelectric constant d₃₃ of 7 pC/N. Remarkably, BTF with 4 mol% of Mn (BTF-4Mn) exhibits a large d₃₃ of 23 pC/N, three times that of unmodified BTF, whereas the Curie temperature T_c is almost unchanged, ~765°C. The increased piezoelectric performance can be attributed to the crystal lattice distortion, decreased dielectric loss tanδ, and increased DC resistivity. Additionally, BTF-4Mn exhibits good thermal stabilities of the electromechanical coupling characteristics, which demonstrates that manganese-modified BTF oxides are promising materials for the use in high-temperature piezoelectric sensors.     

The structure and electrical properties of Ca0.6(Li0.5Bi0.5-xPrx)0.4Bi2Nb2O9 high-temperature piezoelectric ceramics

Ca_0.6(Li_0.5Bi_0.5-xPr_x)_0.4Bi₂Nb₂O₉ ceramics were prepared via a solid-state reaction method. The effect of the Pr content on the structural and electrical properties was systematically investigated. X-ray diffraction (XRD) combined with Rietveld refinement and X-ray photoelectron spectroscopy (XPS) demonstrated that a moderate amount of Pr³⁺ can be incorporated into the NbO₆ octahedra, while excess Pr³⁺ ions probably enter into the (Bi₂O₂)²⁺ layers, thus resulting in an increase in the tetragonality of the crystal structure. The introduction of Pr suppressed the generation of oxygen vacancies and improved the preferential grain growth along the c-axis, which might be responsible for enhancing the resistivity (ρ ~ 10⁶ Ω cm at 600°C). The replacement of Pr³⁺ for A-site Bi³⁺ enhanced the piezoelectric property, and the piezoelectric constant d₃₃ increased from 13.8 pC/N to 16.3 pC/N. The high depolarization temperature (up to 900°C) implied that CBN-LBP100x ceramics are promising candidates for ultrahigh-temperature application.     

Effects of cerium on structures and electrical properties of (Nb,Ta) modified Bi4Ti3O12 piezoelectric ceramics

Bi₄Ti₃O₁₂ high-temperature piezoelectric ceramics composed of 0.03 mol (Nb, Ta)⁵⁺ substituting B site and x mol CeO₂ (x = 0–0.05, abbreviated as BCTNT100x) substituting A site were synthesized by the conventional solid-state reaction method. The effects of Ce additive on the structures and electrical properties of resulting Bi₄Ti₃O₁₂-based ceramics were systematically investigated. In-situ temperature-dependent X-ray diffraction (XRD) confirmed that the phase structure of BCTNT100x ceramics change from orthorhombic structure to tetragonal structure as temperature increased. The ceramics at Ce content x = 0.03 illustrated optimal performances with superior piezoelectric constant (d₃₃ = 36.5 pC/N), high Curie temperature (T_C = 649 °C), and large remanent polarization (2P_r = 21.6 μC/cm²). BCTNT3 ceramics also possessed high d₃₃ of 32.5 pC/N at an annealing temperature of 600°C, with electrical resistivity preserved at 10⁶ Ω cm at 500 °C. These results demonstrate that BCTNT100x ceramics can be used as high-temperature piezoelectric devices.     

Enhanced electrical properties of Cr2O3 addition NBT-based high-temperature piezoelectric ceramics

Owing to industrial and technological developments, there has been an increasing demand for piezoelectric ceramics that can function at temperatures of 500°C or higher. Na_0.5Bi_4.5Ti₄O₁₅ (NBT) with its high Curie temperature (T_C) of 650°C is a typical bismuth layer–structured ferroelectric. However, its relatively low piezoelectric coefficient (d₃₃ ∼ 16 pC/N) hinders its potential application at high temperatures. In this study, compositions of Ca_0.05(Na_0.5Bi_0.5)_0.95Bi₄Ti₄O₁₅ with different additions of Cr₂O₃ (CNBT–Cr100x) were designed based on previous studies on Ca²⁺-doped NBT piezoceramics, and the effects of the addition on the structural and electrical properties were investigated. The d₃₃ value of CNBT–Cr20 was as high as 29 pC/N, almost twice higher than that of pure NBT ceramics. This increase was investigated in depth using X-ray diffraction refinement and piezoelectric force microscopy in terms of intrinsic and extrinsic contributions. The P_s values of CNBT and CNBT–Cr20 were almost equal. The density of the domain walls of CNBT–Cr20 was significantly higher than that of CNBT, indicating that the increase of d₃₃ of CNBT–Cr20 is mainly due to the increase in the extrinsic contribution. The CNBT–Cr20 ceramic exhibited excellent properties with a high T_C of 655°C, a high d₃₃ of 29 pC/N, and a resistivity high than 10⁶ Ω cm at 500°C, demonstrating its potential for applications at high temperatures such as 500°C.     

Enhanced electrical properties in W/Cu co-doped CaBi2Nb2O9 high-temperature piezoelectric ceramics

CaBi₂Nb₂O₉ (CBN)-based high-temperature piezoelectric ceramics with the formula of CaBi₂Nb_2−x(W_3/4Cu_1/4)_xO₉ were prepared via the traditional solid-state reaction method. Both the bulk microstructure and the electrical performance of the W/Cu co-doped CBN-based ceramics were systematically investigated. The results indicated that the W/Cu incorporation into the Nb-site altered the crystal structure, which enhanced the piezoelectricity and resistivity. The ceramic with the composition CaBi₂Nb_1.96(W_3/4Cu_1/4)_0.04O₉ exhibited good performance with a high d₃₃ (~14 pC/N) and T_C (~939℃). Moreover, the ceramic exhibited a good electrical resistivity (ρ) of 4.91 × 10⁵ Ω·cm and a low dielectric loss (tanδ) of 0.1 at 600℃. Furthermore, the ceramic that was annealed at 900℃ for 2 h presented a d₃₃ value of 13 pC/N, thus indicating good thermal stability of the piezoelectric properties. All these results confirm that the CaBi₂Nb_1.96(W_3/4Cu_1/4)_0.04O₉ ceramic may act as a potential promising candidate for piezoelectric device applications in high-temperature environments.     

Doping level effects in Nb self-doped Bi3TiNbO9 high-temperature piezoceramics with improved electrical properties

Nb self-doped Bi₃Ti_1-xNb_1+xO₉ (x = 0, 0.02, 0.04, 0.06, 0.08, and 0.1) high-temperature piezoelectric ceramics were fabricated through the conventional solid-state sintering method. The effects of different Nb self-doping levels on the microstructure, piezoelectric activities, and electrical conduction behaviors of these Nb self-doped Bi₃Ti_1-xNb_1+xO₉ ceramics were studied in detail. Large doping level effects on piezoelectric activity and resistivity were confirmed, which might be ascribed to the evolution of the crystal structure and the variations of the oxygen vacancy concentration and the grain anisotropy induced by Nb doping. An optimized piezoelectric coefficient (d₃₃) of 11.6 pC/N was achieved at x = 0.04 with a Curie temperature of 906°C. Additionally, an improved DC resistivity of 6.18 × 10⁵ Ω·cm at 600°C was acquired in this ceramic. Furthermore, the ceramic exhibited excellent thermal stability with the d₃₃ value maintaining 95% of its initial value after being annealed at 850°C for 2 hours. These results showed that Nb self-doped Bi₃Ti_1-xNb_1+xO₉ ceramics might have great potentials for high-temperature piezoelectric applications.     

Enhanced insulation and piezoelectric properties of 0.57(Bi0.8La0.2)FeO3-0.43PbTiO3 solid solutions with Fe addition

0.57(Bi_0.8La_0.2)FeO₃-0.43PbTiO₃-x mol%Fe₂O₃ ceramics (BLF-PT-xFe, x = 0, 0.025, 0.05, 0.125, and 0.25) were prepared by the conventional solid-state reaction method. X-ray diffraction (XRD) reveals that all samples display the perovskite structure with a coexistence of tetragonal (T) phase and rhombohedral (R) phase, while the incorporation of Fe promotes the phase transition from T to R. Scanning electron microscopy (SEM) images show that all samples are well crystallized and their grain size increases noticeably with the increase of Fe content. X-ray photoelectron spectroscopy (XPS) results indicate that Fe doping significantly inhibits the formation of oxygen vacancies, thereby improving insulation of BLF-PT-xFe ceramics. Interestingly, the Curie temperature of BLF-PT-xFe is around 330°C, little changing with the variation of Fe content. However, the depolarization temperatures of BLF-PT ceramics with Fe are 50°C higher than that of the sample without Fe doping. The hopping of second ionized oxygen vacancies are the major carriers in the temperature range of 200°C–500°C. The optimal component of BLF-PT-xFe ceramics appear at x = 0.05, where the dielectric loss tanδ, AC resistivity (200°C), and piezoelectric coefficient d₃₃ could be 0.015, 7 × 10⁶ Ω cm, and 245 pC/N, respectively. All these results indicate that the Fe addition is an effective method to enhance dielectric and piezoelectric properties.     

Improving the piezoelectric properties of CBN-based ceramic by a Ce ion

CaBi₂Nb₂O₉ (CBN), one of the bismuth-layered structural ferroelectrics, with high Curie temperature (T_C), has great potential in high-temperature applications. In this work, high Curie temperature and piezoelectric constant (d₃₃) are realized in modified CaBi₂Nb₂O₉ ceramics with Ce-substitution. Ce-substitution changes the crystal structures and domain structures of CBN-based ceramics, so as to improve the piezoelectric properties. The optimal performances are obtained with a high d₃₃ value (∼18.0 pC/N) and a T_C value (∼930°C), together with a low tan δ value (∼0.028 at 500°C). Moreover, the thermal stability is also enhanced, where the d₃₃ value maintains 93.9% of its original value after annealing at 900°C for 2 h. Thus, these findings play a meaningful role in devices manufacturing, where the apply temperature is often more than 500°C.     

Tailoring structure and piezoelectric properties of CaBi2Nb2O9 ceramics by W6+-Doping

Calcium bismuth niobate (CaBi₂Nb₂O₉) is a typical bismuth-layer structured piezoelectrics (BLSPs) with a high Curie temperature (T_C) of ～943 °C, but it has low piezoelectric coefficient and high-temperature resistivity which severely limits signal acquisition in the high-temperature piezoelectric vibration sensors. Ion-doping modification is regarded as an effective way to enhance electrical properties. In this work, W⁶⁺ donor-doping at Nb⁵⁺ site in the CaBi₂Nb_2-xW_xO₉ (x = 0, 0.020, 0.025, 0.030, 0.035 and 0.040) piezoelectric ceramics with T_C of 931 ± 2 °C were fabricated by the conventional solid-state reaction method. The effects of W⁶⁺-doping on crystal structure of CaBi₂Nb_2-xW_xO₉ as well as microscopic morphology and electrical properties of ceramics were investigated systematically. The tetragonality, isotropy and electrical properties of the ceramics were enhanced with the introduction of W⁶⁺ dopant. It was found that x = 0.025 was the optimal W⁶⁺-doping ratio that yielded remnant polarization of 8.0 μC/cm², electrical resistivity of 3.0 × 10⁶ Ω cm at 600 °C, piezoelectric coefficient (d₃₃) of 14.4 pC/N, and good thermal depoling property. Our work has established a feasible approach to tune the structure of CaBi₂Nb₂O₉ to improve piezoelectric properties for potential applications in high-temperature piezoelectric vibration sensors.     

Enhanced piezoelectric properties and low electrical conductivity of Ce-doped Bi7Ti4.5W0.5O21 intergrowth piezoelectric ceramics

New types of Ce-doped Ce_xBi_7-xTi_4.5W_0.5O₂₁ (BTW-BIT-xCe) Aurivillius intergrowth ceramics with high Curie temperatures were synthesized to improve the piezoelectric performances as well as the conduction behaviour, and these ceramics exhibit great potential for high-temperature lead-free piezoelectric applications. The crystal structure, electrical properties and conduction behaviour of BTW-BIT-xCe samples were analysed thoroughly. The XRD patterns combined with Rietveld refinements of the patterns showed that the crystal structure transformed from orthorhombic structure towards pseudo-tetragonal structure with increasing CeO₂ dopant, indicating that a higher symmetry was obtained. The dielectric properties of Ce-doped samples were improved, accompanied by a significant drop in the dielectric loss and a slight decreased Curie temperature (705 °C–683 °C). An enhanced piezoelectric constant d₃₃ of 25.3 pC/N was obtained in BTW-BIT-0.12Ce, which may be attributed to a common decrease in the electrical conductivity and coercive field. Besides, a low electrical conductivity of 2 × 10^-6 S/cm at 540 °C was achieved in the same component owing to a decreased concentration of the oxygen vacancies, which was verified by analyses on XPS spectra. The above results indicate that Ce-doped BTW-BIT samples have great development potential for high temperature piezoelectric applications.     

Optimized piezoelectric properties and temperature stability in PSN-PMN-PT by adjusting the phase structure and grain size

For relaxor ferroelectric materials, improving the piezoelectric properties and temperature stability simultaneously is still a great challenge up to now. In this work, the structure, electric properties, and thermal stability of xPSN-(1 − x)PMN-0.4PT (x = 0.15, 0.29, 0.43, and 0.5) ceramics were studied systematically by experiment and phase field simulation. A high Curie temperature T_c of 255℃ and good longitudinal electricmechanical coupling factor k₃₃ of 0.75 and piezoelectric constant d₃₃ of 650 pC/N are achieved in x = 0.43 ceramics with monoclinic C and tetragonal phases coexistence at room temperature. At 30℃, this composition ceramics sintered at 1260℃ shows the remnant polarization P_r and coercive field E_c are about 36.8 µC/cm² and 8.2 kV/cm respectively. Moreover, as the temperature increases to 150℃, these values remain as high as 22.6 µC/cm² and 5.7 kV/cm. In the temperature range of 30–230℃, the variation of k₃₃ and d₃₃ is about 24% and 25%. These high piezoelectric performance and superior temperature stability are related to the more complex domain structures caused by phase coexistence and larger grains with more stable domain structure due to internal stress. The former is beneficial in improving the piezoelectric properties, and the latter dominates the enhanced temperature stability.     

High-temperature BiFeO3–PbTiO3-Ba(Zr,Ti)O3 ternary ceramics with excellent piezoelectricity

Ternary ceramics of (0.87−x)BiFeO₃–xPbTiO₃–0.13Ba(Zr_0.5Ti_0.5)O₃ (BF–xPT–0.13BZT, 0.27 ≤ x ≤ 0.37) were prepared by the traditional solid state reaction methods. X-ray diffraction results display that BF-xPT-0.13BZT ternary ceramics of x ≥ 0.29 exhibit the perovskite structure with dominant tetragonal (T) phases mixed with a small amount of rhombohedral (R) phases. Scanning electron microscopy (SEM) images reveal that the average grain size of BF-xPT-0.13BZT ternary ceramics is in a range of 10–11 μm, increasing first and then decreasing with the increase of PbTiO₃ (PT) content. The low tanδ of about 0.015 and high Curie temperature T_c of above 450°C were obtained for BF-xPT-0.13BZT ternary ceramics. Moreover, the fluctuation of piezoelectric coefficient d₃₃ is less than ±10% over a broad temperature range of 30°C–400°C. BF-xPT-0.13BZT ternary ceramics for x = 0.33 possess the maximum T_c and d₃₃ of 470°C and 320 pC/N respectively, with the room temperature resistivity of about 10¹¹ Ω·cm. These results indicate that BF-xPT-0.13BZT ternary ceramics for x = 0.33 with both excellent piezoelectric properties and high Curie temperature have promising applications in high-temperature piezoelectric devices.     

High‐temperature piezoelectric properties of 0‐3 type CaBi4Ti4O15:x wt%BiFeO3 composites

The 0‐3 type CaBi₄Ti₄O₁₅:30 wt%BiFeO₃ composite shows much better high‐temperature piezoelectric properties than the single‐phase CaBi₄Ti₄O₁₅ or BiFeO₃ ceramics. The composite with 0‐3 type connectivity exhibits a high density of 7.01 g/cm³, a saturated polarization of 21.5 μC/cm² and an enhanced piezoelectric d₃₃ of 25 pC/N. After the poled composite was annealed at 600°C, its d₃₃ is 21 pC/N at room temperature. Resistance of the composite decreases slowly from 10⁹ ohm at 20°C to ~10⁵ ohm at 500°C. Furthermore, the poled composite shows strong radial and thickness dielectric resonances at 20°C‐500°C.     

Enhancement of piezoelectric properties of BF–BT ceramics by using ZrO2 powder bed during the sintering process

ZrO₂ powders of various particle sizes (0.15, 0.7, 500 µm) were used to simulate loose powder bed sintering to prepare BF–BT piezoelectric ceramics. The phase structure, dielectric properties, ferroelectric properties, and piezoelectric properties were compared with the samples sintered by the conventional powder bed method (i.e., powder of the same composition as the sample). Results showed that the use of loose ZrO₂ powder bed could improve the heat conduction rate and the sintering quality of bulk BF–BT piezoelectric ceramics. The XPS results showed that the samples sintered with 500 µm ZrO₂ powder beds had the lowest concentration of Fe²⁺, exhibited the largest piezoelectric coefficients (d₃₃ = 201 pC/N). In contrast, the sample sintered with a conventional powder bed under the same sintering conditions had a piezoelectric coefficient d₃₃ of 156 pC/N.     

Enhanced piezoelectric properties and electrical resistivity in W/Cr co-doped CaBi2Nb2O9 high-temperature piezoelectric ceramics

W/Cr co-doped Aurivillius-type CaBi₂Nb_2-x(W_2/3Cr_1/3)_xO₉ (CBN) (x?=?0.025, 0.050, 0.075, 0.100, and 0.150) piezoelectric ceramics were prepared by the conventional solid-state reaction method. The crystal structure, microstructure, dielectric properties, piezoelectric properties, and electrical conductivity of these ceramics were systematically investigated. After optimum W/Cr modification, the CBN ceramics showed both high d₃₃ and T_C. The ceramic with x?=?0.1 showed a remarkably high d₃₃ value of ~15 pC/N along with a high T_C of ~931?°C. Moreover, the ceramic also showed excellent thermal stability evident from the increase in its planar electromechanical coupling factor k_p from 8.14% at room temperature to 11.04% at 600?°C. After annealing at 900?°C for 2?h, the ceramic showed a d₃₃ value of 14?pC/N. Furthermore, at 600?°C, the ceramic also showed a relatively high resistivity of 4.9?×?10⁵ Ω?cm and a low tanδ of 9%. The results demonstrated the potential of the W/Cr co-doped CBN ceramics for high-temperature applications. We also elucidated the mechanism for the enhanced electrical properties of the ceramics.     

Microstructure,Ferroelectric, Piezoelectric,and Ferromagnetic Properties of Sc‐Modified BiFeO3–BaTiO3 Multiferroic Ceramics with MnO2 Addition

0.725BiFe_1?xSc_xO₃–0.275BaTiO₃ + y mol% MnO₂ multiferroic ceramics were fabricated by a conventional ceramic technique and the effects of Sc doping and sintering temperature on microstructure, multiferroic, and piezoelectric properties of the ceramics were studied. The ceramics can be well sintered at the wide low sintering temperature range 930°C–990°C and possess a pure perovskite structure. The ceramics with x/y = 0.01–0.02/1.0 sintered at 960°C possess high resistivity (~2 × 10⁹ Ω·cm), strong ferroelectricity (P_r = 19.1–20.4 μm/cm²), good piezoelectric properties (d₃₃ = 127–128 pC/N, k_p = 36.6%–36.9%), and very high Curie temperature (618°C–636°C). The increase in sintering temperature improves the densification, electric insulation, ferroelectric, and piezoelectric properties of the ceramics. A small amount of Sc doping (x ≤ 0.04) and the increase in the sintering temperature significantly enhance the ferromagnetic properties of the ceramics. Improved ferromagnetism with remnant magnetization M_r of 0.059 and 0.10 emu/g and coercive field H_c of 2.51 and 2.76 kOe are obtained in the ceramics with x/y = 0.04/1.0 (sintered at 960°C) and 0.02/1.0 (sintered at 1050°C), respectively. Because of the high T_C (636°C), the ceramic with x/y = 0.02/1.0 shows good temperature stability of piezoelectric properties. Our results also show that the addition of MnO₂ is essential to obtain the ceramics with good electrical properties and electric insulation.     

Enhanced piezoelectric strain of BiFeO3–Ba(Zr0.02Ti0.98)O3 lead-free ceramics near the phase boundary

The xBiFeO₃-(1-x)Ba(Zr_0.02Ti_0.98)O₃ + 1.0 mol% MnO₂ (xBF-BZT) lead-free piezoelectric ceramics were prepared by conventional solid-state reaction method. The structure, dielectric, and piezoelectric properties were studied. X-ray diffraction (XRD) analysis showed that xBF-BZT ceramics exhibited pure perovskite structure with the coexistence of tetragonal and rhombohedral phases (0.66 ≤ x ≤ 0.74). The Curie temperature T_c, the dielectric constant ε_r (1 kHz), dielectric loss tanδ (1 kHz), piezoelectric constant d₃₃, coercive field E_c (80 kV/cm), and remnant polarization P_r (80 kV/cm) of 0.7BF-0.3BZT-Mn ceramics were 491°C, 633, 0.044, 165 pC/N, 35.6 kV/cm, and 22.6 μC/cm², respectively. The unipolar strain of 0.7BF-0.3BZT reached up to 0.20% under the electric field of 60 kV/cm, which is larger than that (0.15%) of BiFeO₃–BaTiO₃ ceramics. These results indicated that the xBF-BZT ceramics were promising candidates for high-temperature piezoelectric materials.     

Phase,domain, and microstructures in Sr2+ substituted low-temperature sintering PZT-based relaxor ferroelectrics

The Ag-Pd internal electrode of multilayer piezoelectric ceramics needs to be sintered below 1000°C, and lead wires and components need to be welded with lead-free solder at 260°C. PNN–PMW–PZT–xSr piezoelectric ceramics with high Curie temperature (T_c > 260°C) were synthesized at a low sintering temperature (960°C) to meet the requirements of multilayer piezoelectric devices. The relationship between structures (phase, domain, and microstructures) and electrical properties (piezo/ferroelectric properties, and dielectric relaxation) in the Sr²⁺ substituted ceramics was investigated. Rietveld refinement and Raman spectra show that Sr²⁺ substitution can cause the phase change and increase the force constant of [BO₆] octahedron. The piezoelectric response increases with increasing the content of the tetragonal phase (CTP) in the rhombohedral-tetragonal (R-T) coexisted ceramics. The ceramics with 0.6 mol% Sr²⁺ substitution have minimum activation energy for domain wall movement (E_a) of 0.0362 eV which favors the formation of nanometer-sized domains, and possess excellent electrical properties (d₃₃ = 623 pC/N, d₃₃^* =783 pm/V, T_c =295°C). The higher the CTP, the lower the E_a. The lower E_a favors the rotation of polarization direction and extension, and is beneficial to the generation of the nanometer-size domains, resulting in high piezoelectric properties.