一种用于测试坡莫合金薄膜机械性能的拉伸模型

坡莫合金(Ni80Fe20)薄膜是微机电系统常用的磁性材料之一.介绍了一种用于测试其机械性能的单轴拉伸试验模型.此模型的特点是微小试件两端固定、且与加载机构集成在基片上,从而可减少操作工作量、提高对准精度.整个机构以微细加工方法制成:坡莫合金拉伸试件以光刻和电镀技术成型,其余的加载机构以湿法蚀刻制成.实验表明:使用此机构可以简单且高精度地对薄膜试件进行拉伸试验,获得多项力学性能参数,从而为MEMS器件设计和分析提供可靠的理论基础.     

板料在单拉及双拉受力状态下的仿真及分析

研究板料加工成形优化问题,由于板料成形过程中,存在性能具有明显各向异性,且加载路径变化实现不方便的问题,造成板料变形.为解决上述问题,给出了一种利用十字形试件进行双向拉伸的试验方法.建立了2A12板料单向拉伸仿真试验模型,与试验数据进行比较,验证了方法的正确性.用应力函数法分析了双向拉伸的应力分布,建立了十字形试件双向拉伸试验在倒圆角及臂上开缝前后的有限元模型,并用通用有限元软件abaqus6.6对2A12进行了仿真,对不同情况下双拉的不均匀度进行实验,证明了在臂上开缝使得十字形试件中心区应力均布情况明显改善.     

预制裂隙岩石单轴压缩声发射特征研究

为了研究预制裂隙岩石失稳破坏过程中声发射特征,对预制不同倾角裂隙岩石进行了单轴压缩声发射试验,分析了预制裂隙岩石变形破坏特征及声发射信号变化规律。结果表明:随着预制裂隙倾角的减小,岩石试件的抗压强度逐渐降低,达到峰值应力的时间逐渐缩短,破坏时的轴向应变逐渐减小,试件由拉伸劈裂破坏向剪切滑移破坏转变;随着预制裂隙倾角减小,试件首次出现声发射能量和振铃计数峰值的时间提前、所需加载的轴向应力减小;声发射累计振铃计数随加载时间的增加呈非线性上升趋势,且预制裂隙倾角越小,声发射累计振铃计数上升速率越快。     

基于虚拟仪器的薄膜材料拉伸测试系统

光致弯曲薄膜材料在微机电系统中有着巨大的应用前景,而材料基本物理参数的测试是重要的基础性工作.鉴于现有的薄膜材料拉伸测试机不能满足微尺度条件下的测试需要或者较为昂贵,设计出一种薄膜材料拉伸测试系统,能够精确均匀加载,并运用LabVIEW编程设计出拉伸测试虚拟仪器,实现数据采集、分析、处理和存储,以及控制信号输出.该系统具有分辨率高的优点,位移分辨率和力分辨率分别可达1μm和1mN,满足了微小尺度薄膜试验的需要.     

微机械薄膜应力的在线测试结构

微机械薄膜应力对MEMS器件有较大的影响，因此应力测量对于工艺监控和MEMS器件设计是必须的。介绍了微机械薄膜应力的在线测试结构与方法，详细分析了各种方法的特点。对于MEMS薄膜应力测试结构设计有一定的参考价值。     

测量材料机械性能的几种引伸计

引言材料的拉伸机械性能反映了材料的静强度和塑性指标。进行拉伸试验时需要测量试件上的变形和作用力两个参数。目前国内仍然采用机械方法来测量变形,存在着精度低,不能进行数据处理等问题。近年来,国内制成了多种电信号传递的引伸计,并已在一些单位中使用。本文介绍国内外测量变形的多种引伸计,供从事材料机械性能测量工作的同志参考。     

PVDF的大拉伸变形测试机理研究

基于压电薄膜聚偏二氟乙烯(简称PVDF)在小应变下的测试机理,研究和分析了PVDF压电薄膜在大拉伸下的变形,推导了PVDF的大拉伸测试机理.通过自制的PVDF压电薄膜应变片大拉伸试验验证了该理论方法的可行性,为进一步开展PVDF测试大拉伸变形的应用研究提供了理论依据.     

基于永磁薄膜的MEMS磁传感器设计与制作

提出了一种基于永磁薄膜的新型MEMS磁传感器,磁传感器由MEMS扭摆、CoNiMnP永磁薄膜和差分检测电容等部分组成。分析了磁传感器的磁敏感原理和电容检测原理,提出了器件的结构参数并对器件进行了模态仿真。利用MEMS加工技术成功制作了MEMS磁传感器样品,并进行了测试。测试结果表明:得到的MEMS磁传感器的电容灵敏度可达到27.7 fF/mT,且具有良好的线性度。根据现有的微小电容检测技术,传感器的磁场分辨率可达到36 nT。     

MEMS器件中多层金属薄膜溅射工艺研究

溅射工艺是制作微机电系统(MEMS)器件金属薄膜的主要方式,金属薄膜作为MEMS器件中的掩模层和功能层,要求薄膜应力小,粘附性、均匀性和可焊性好.通过对常用金属薄膜材料特性、多层金属薄膜溅射工艺和质量评价方法的研究得出了优化工艺的的方法,提高了多层金属薄膜的质量.     

基于Arduino的三维磁记忆检测系统设计及试验研究

利用三轴线性霍尔传感器MLX90393制作磁记忆检测探头,基于Arduino硬件开发平台研制金属磁记忆检测系统,以30CrMo材料试件为试验对象,在静载拉伸作用下开展金属磁记忆试验研究,分析磁记忆信号变化规律以及磁记忆信号梯度值与拉伸载荷之间的变化特征.实验结果表明,拉伸过程中试件表面的磁记忆信号切向分量梯度最大值在拉伸载荷达到16 kN时开始明显变化,在23 kN之后急剧增大到0.0425;法向分量梯度最大值在拉伸载荷达到23 kN之后急剧增大到0.55.本系统为铁磁性材料中应力集中的判定和测量提供了一种有效的检测方法.     

基于鼓膜法的薄膜力学性能测试研究

采用自行研制的鼓膜实验装置,结合迈克尔逊激光干涉位移测量技术,获取薄膜的变形值与压力值之间的关系曲线,以实现薄膜试样力学性能的测试.对鼓膜法测试薄膜力学性能的现状做了评述;对实验原理以及装置设计进行论述;进行实验测量,并对实验结果进行有限元分析与仿真.对纯铝薄膜(纯度99.9％,厚为210 μm)进行鼓膜实验,测得其弹性模量E为68.3 GPa,与资料结果基本一致,说明研制的鼓膜实验装置测量薄膜力学性能方法切实可行.实验装置对于在微/纳机电系统(MEMS/NEMS)中广泛应用的薄膜材料的力学性能表征具有十分重要的意义.     

A study on controllable aluminium doped zinc oxide patterning by chemical etching for MEMS application

This present work reports on the study of controllable aluminium doped zinc oxide (AZO) patterning by chemical etching for MEMS application. The AZO thin film was prepared by RF magnetron sputtering as it is capable of producing uniform thin film at high deposition rates. X-Ray diffraction (XRD) and atomic force microscopy (AFM) characterization were done to characterize AZO thin film. The sputtered AZO thin film shows c-axis (002) orientation, low surface roughness and high crystalline quality. To pattern AZO thin film for MEMS application, wet etching was chosen due to its ease of processing with few controlling parameters. Four etching solutions were used namely: 10 % Nitric acid, 10 % Phosphoric acid, 10 % Acetic acid and Molybdenum etch solutions. For the first time, chemical etching using Molybdenum etch that consist of a mixture of CH₃COOH, HNO₃ and H₃PO₄ was characterized and reported. The effect of these acidic solutions on the undercut etching, vertical and lateral etch rate were studied. The etched AZO were characterized by scanning electron microscopy (SEM) and stylus profilometer. The investigations showed that the Molybdenum etch has the lowest undercut etching of 7.11 µm, and is highly effective in terms of lateral and vertical etching with an etch ratio of 1.30. Successful fine patterning of AZO thin films was demonstrated at device level on a surface acoustic wave resonator fabricated in 0.35 μm CMOS technology. The AZO thin film acts as the piezoelectric thin film for acoustic wave generation. Patterning of the AZO thin film is necessary for access to measurement probe pads. The working acoustic resonator showed resonance peak at 1.044 GHz at 45.28 dB insertion loss indicating that the proposed Molybdenum etch method does not adversely affect the device’s operating characteristics.

     

Direct comparison of stylus and resonant methods for determining Young's modulus of single and multilayer MEMS cantilevers

As microelectromechanical systems (MEMS) become more complex and is produced in even greater numbers it becomes increasingly important to have a full understanding of the mechanical properties of the commonly used MEMS materials. One of the most important properties for MEMS is the Young's modulus. This work describes the direct comparison of two methods often used for measuring the Young's modulus of thin film materials using micro-cantilever test structures: a load-deflection method and a resonant frequency method. The comparison was carried out for a range of materials, different cantilever geometries as well as for single and multilayer materials. It was found that both methods produce results that agree with each other and also agree with the values most often given in the literature.     

Micromechanical characterization of electroplated permalloy films for MEMS

In order to improve the reliability of MEMS designs, evaluating the mechanical properties of soft magnetic materials is needed. In this paper, we present a tensile testing method to characterize the mechanical properties of microscale electroplated permalloy (80 wt% Ni, 20 wt% Fe) films. The gauge section of the specimen is 50 μm wide, 100 μm long and 5 μm thick. The measured Young’s modulus of permalloy films is 96.4 GPa, and the tensile strength is 1.61 GPa. The fracture strain measured by the images of specimens is about 2%.     

Micro-electro-mechanical systems fast fabrication by selective thick polysilicon growth in epitaxial reactor

A thick layer selective polysilicon growth technique has been developed for micro-electro-mechanical systems (MEMS) fabrication. It allows fast MEMS fabrication without using silicon on insulator wafers or deep ICPRIE etching. The fabrication technique is based on two main steps: a first seed layer of polysilicon is deposited and patterned; the second step consists in the selective growth of this layer in an epitaxial reactor. The first part of this work is devoted to the optimisation of growth parameters. Afterwards, this technique is applied for fabrication of different kinds of actuators, involving films several microns thick with good mechanical properties such as a low mechanical stress and a low roughness of the polysilicon film surface. Furthermore, thermal actuator prototypes were fabricated by using this technique;showing good mechanical properties and high reliability.     

Horizontal buried channels in monocrystalline silicon

A thick layer selective polysilicon growth technique has been developed for micro-electro-mechanical systems (MEMS) fabrication. It allows fast MEMS fabrication without using silicon on insulator wafers or deep ICPRIE etching. The fabrication technique is based on two main steps: a first seed layer of polysilicon is deposited and patterned; the second step consists in the selective growth of this layer in an epitaxial reactor. The first part of this work is devoted to the optimisation of growth parameters. Afterwards, this technique is applied for fabrication of different kinds of actuators, involving films several microns thick with good mechanical properties such as a low mechanical stress and a low roughness of the polysilicon film surface. Furthermore, thermal actuator prototypes were fabricated by using this technique;showing good mechanical properties and high reliability.

     

Tensile testing of microfabricated thin films

 Mechanical properties of titanium thin films of 0.5 μm thickness and aluminum thin films of 1.0 μm thickness, microfabricated by magnetron sputtering, were measured by using a novel tensile machine. These thin films are difficult to handle because they are fragile, so the thin film specimens were fabricated by using semiconductor manufacturing technology in a silicon frame to protect them. The test section of these specimens was 300 μm in width and 1400 μm in gauge length. By gripping the thin film specimen with a new device using a micrometer, it could be mounted on the tensile machine easily. The stress-strain diagrams of both thin films were measured continuously in the atmosphere at room temperature. The experimental results indicated that the titanium thin film and the aluminum thin film had a smaller breaking elongation although they had a larger tensile strength than bulk pure titanium and bulk pure aluminum, respectively. Received: 31.10.96/Accepted: 14.11.96     

Effect of physical vapor deposition metallic thin films on micro injection molded weld line mechanical properties

Micro injection molded polymeric parts coated with functional thin films/layers show off the promising applications in microsystems area. But the unfavorable and unavoidable defect of weld line in micro injection molding part leads to detrimental mechanical and surface properties. The possibility of the functional thin film for enhancing micro injection molded weld lines was investigated. Two typical coating materials (aluminum and titanium) with various film thicknesses (400, 600, 800 nm) were deposited on one side of the micro injection molded weld line tensile sample via physical vapor deposition (PVD) method. The coated micro weld line samples were characterized by tensile tests. The results show that PVD films of aluminum and titanium can reinforce the strength and stiffness of micro injection molded weld line, even at thin thickness levels. But when the film thickness is increasing, the weaker adhesion between metallic films and polymers decreased the PVD films’ enhancing performance for micro weld line mechanical properties due to the degradation of polymers related to longer time exposure under high temperature.     

Impact of the substrate dependent polarity distribution in c-axis oriented AlN thin films on the etching behaviour and the piezoelectric properties

In this work, the influence of substrate properties on the polarization of highly c-axis oriented aluminium nitride (AlN) thin films and as a consequence, on the piezoelectric properties and the wet-chemical etching behaviour is investigated. Therefore, 620 nm thin AlN layers are simultaneously sputter-deposited under nominal unheated substrate conditions on silicon (Si) substrates or on those covered with a sputter-deposited titanium (Ti) film. After wet-chemically etching in a phosphorous acid based solution at 80 °C different residues of AlN remain. Wet-chemical etching of AlN films deposited on Ti results in a high film porosity. In contrast, AlN layers on Si are either hardly attacked or the complete thin film is removed except some remaining conical shaped residues. Furthermore, we demonstrate a change in the measured electro-mechanical properties with changing maximum deposition temperature caused by a self-heating effect of the substrate during the AlN deposition process. The change in piezoelectric properties and the differing etching behaviour is caused by a change in polarity within the AlN layer. These domains are visualized by piezoresponse force microscopy measurements, and are in good agreement with the observed etching results. For layers with mixed polarization, the absolute values of the piezoelectric constant d ₃₃ are reduced due to the counteraction of piezoelectric domains with opposite polarization.