高含量银基导电胶的制备与性能研究

以90%(质量分数)银含量,10%(质量分数)树脂为基体制备出高银含量,高性能的环氧导电胶。采用0.025 mol/L KI试剂对银粉进行简单的表面处理,原位取代银粉表面的部分润滑剂并且与银粉表面的氧化银发生反应。在日光照射条件下原位生成小尺寸的银纳米粒子,这些小尺寸的银纳米粒子在固化过程中,会发生明显的烧结现象,增加银粉中相邻银微米片和银微米球之间的相互接触,从而可以显著降低导电银胶的体电阻率。相比于未处理的银粉制成的导电银胶,其体电阻率降低了26%,线电阻降低了8%,将其应用在光伏电池板上,极大的提高了其导电性能。     

PET基纳米Ag薄膜导电性能及AFM分析

为了研究在PET基非织造布上沉积纳米Ag薄膜厚度对薄膜表面形貌及导电性能的影响，采用磁控溅射法，在PET非织造布上制备了不同厚度的纳米结构Ag薄膜，采用原子力显微镜（AFM）分析不同厚度纳米结构Ag薄膜形貌及粒径的变化；研究了纳米Ag薄膜厚度与薄膜导电性能的关系。实验结果表明：随着膜厚的增加，膜表面逐渐形成连续结构；同时PET非织造布基银薄膜存在一个临界膜厚，在临界膜厚处，薄膜致密度更高，生长更为均匀，薄膜缺陷较少；同时，随着膜厚增加，导电性能提高，在临界膜厚处，电阻率达到最小。     

填充银纳米棒新型导电油墨

采用微波辅助原位氧化还原法制备长径比均匀的银纳米棒, 研究了制备条件参数如催化剂浓度、 表面活性剂与先驱体浓度比率等因素对制备银纳米材料的形貌的影响。以这些银纳米棒作为导电填料制备印刷用导电油墨, 研究了填料含量、 纳米棒及纳米粒子的比率对导电油墨的电导率、 附着力、 老化性能的影响。结果表明, 当晶体生长催化剂NaCl与AgNO₃的摩尔比为1:5时, 得到的银纳米材料中纳米棒比例达95%以上。对导电油墨的性能研究表明, 当填料中银纳米棒比例为95%时得到的导电胶具有最低的渗滤阈值, 为62%, 同时经过80℃、 85%RH老化环境老化500 h后导电油墨的体积电阻率上升不超过10%。     

纳米导电纤维填充天然胶乳复合材料的电性能研究

用纳米导电纤维填充天然乳得复合材料,研究了复合材料的导电性、介电性以及温度对复合材料电阻率的影响。结果表明,随纳米导电纤维填充份数的增加,复合材料的电阻率下降,介常数增大;电阻率对温度的依赖性产大,并且当纳米导昵水在胶乳中形成导电网络时,电阻率和表面电阻率随温度同表现出不同的变化趋势。     

TiN-Al2O3纳米复合材料的力学性能和导电性能

以纳米TiN和α-Al2O3粉体为原料,采用球磨混合法制备了纳米TiN-Al2O3复合粉体,通过热压烧结得到致密烧结体.研究了纳米TiN颗粒对Al2O3材料力学性能和导电性能的影响,实验结果表明:在Al2O3基体中加入15vol％TiN纳米颗粒时,Al2O3材料的弯曲强度和断裂韧性分别从370MPa和3.4MPa·m1/2提高到690MPa和5.1MPa·m1/2,随着TiN添加量的增加,复合材料的电阻率逐渐降低,在25vol％TiN时达到最低值(6.5×10-3Ω·cm).     

基于银纳米颗粒墨水在柔性基材表面制备导电薄膜及其电阻率

通过两相界面反应制备出小尺寸银纳米颗粒,用喷墨打印技术和热处理工艺在柔性PET基材表面制备导电薄膜。用紫外-可见光吸收光谱、透射电镜和能谱研究了银颗粒粒径、微结构和成分,结果表明所合成的颗粒为多晶结构,粒径为2～5nm。用扫描电镜和四探针薄膜电阻率测量法研究了热处理温度、时间与薄膜形貌、电阻率之间的关系,结果表明柔性PET塑料表面的银颗粒在150℃条件下处理30min,可获得表面平整、无明显裂纹、电阻率～6.4μΩ.cm的导电薄膜。     

银纳米线柔性透明导电薄膜的可控制备和光、电性能

柔性电子学的高速发展,亟需开发新型高透光率、低电阻的的柔性透明导电薄膜。首先在聚乙烯吡咯烷酮(PVP)存在下,用乙二醇还原硝酸银法合成了银纳米线,并采用氯化铁(FeCl3)调节纳米线的直径和长径比,获得了直径为100nm、长度为47μm、分散均匀的银纳米线。然后将银纳米线沉积在聚对苯二甲酸乙二酯(PET)薄膜上形成银纳米线导电薄膜,研究了银纳米线沉积密度和直径对导电薄膜透光率和方阻的影响规律。研究发现,随着纳米线沉积密度的增加,导电薄膜的透过率和方阻都降低,但其品质系数(F.O.M.)增加,最高可达410。当导电薄膜的透光率为80%时,银纳米线直径为35和70nm的体系具有较低方阻,约132Ω/□。而且,该导电薄膜还表现出良好的耐弯曲性能。     

基于银纳米线的柔性透明导电薄膜的研究

为了提高透明导电膜的柔性和导电性,近年来银纳米线透明导电薄膜的制备受到越来越多的关注。银纳米线的合成方法主要为水热合成法、种子诱导法等。本文论述了银纳米线的制备技术及其优缺点,阐述当前银纳米线透明导电薄膜领域的最新研究成果,并对其市场应用及发展趋势进行了展望。     

纳米线透明导电薄膜的制备及在光电器件中的应用

基于纳米线的透明导电薄膜具有光电性能优异、制备成本低廉以及可用于制备柔性器件等优点,在透明导电薄膜材料领域占据重要地位。文章着眼于阐述纳米线透明导电薄膜的制备及其在光电器件中的应用。首先详细介绍了滴涂、浸渍、抽滤、迈耶棒涂布、旋涂、喷印、印刷等7种制备纳米线透明导电薄膜的方法。光电器件是应用透明导电薄膜的重要领域,文章还介绍了纳米线透明导电薄膜在太阳能电池和电致发光器件中的应用。纳米线透明导电薄膜中,银纳米线和铜纳米线透明导电薄膜最受关注,其制备工艺日趋完善,有望率先在工业应用中取得突破。     

纳米银线与嵌段聚合物复合导电材料的研究

用可逆加成-断裂链转移(RAFT)方法合成两亲性嵌段共聚物聚(甲基丙烯酸甲酯-b-丙烯酸)(PMMA-PAA),多元醇法制得银纳米线,并将两者复合制备出导电复合材料。采用扫描电镜、透射电镜、红外光谱、核磁共振分别对产物进行了表征。通过改变纳米银线的质量比制得具有不同电导性的复合材料,用四探针测试仪测试其电导性,研究了电导率随银纳米线质量比改变的变化规律,结果表明复合材料的电导率随银纳米线含量的增加而变大。     

还原氧化石墨烯基纳米银线透明导电薄膜研究进展

透明导电薄膜已广泛应用于印刷电子领域,传统的透明导电薄膜氧化铟锡（ITO）因其高脆性低柔韧性而不能满足高速发展的柔性电子行业;纳米银线（AgNWs）和石墨烯均具有良好光学性能、导电性能以及机械性能,使其能成为制备透明导电薄膜的理想材料。综述了近年来还原氧化石墨烯（rGO）基AgNWs透明导电薄膜的研究进展。介绍了柔性导电薄膜的关键参数及rGO/AgNWs透明导电薄膜的成膜工艺;归纳了影响rGO/AgNWs透明导电薄膜光电性能的主要因素和相关研究;阐述了rGO/AgNWs透明导电薄膜在印刷电子领域的应用现状,并展望了rGO/AgNWs透明导电薄膜的未来发展趋势。     

Ultraflexible Transparent Bio‐Based Polymer Conductive Films Based on Ag Nanowires

The unstable mechanical properties of flexible transparent conductive films (TCFs) make it difficult for them to meet the requirements for displays or wearable devices. Here, the relationship between the mechanism behind the bending behavior and the electrical properties, which is important for improving the mechanical stability of flexible TCFs, is explored. Flexible TCFs are reported based on silver nanowires (AgNWs) and bio‐based poly(ethylene‐co‐1,4‐cyclohexanedimethylene 2,5‐furandicarboxylate)s (PECFs), with a low sheet resistance (23.8 Ω sq^?1 at 84.6% transmittance) and superior mechanical properties. The electrical properties of the AgNW/PECFs composite film show almost no change after bending for 2000 times.     

铜膜碘化法制备p型CuI薄膜及其用作空穴传输层的反型钙钛矿电池性能

γ相碘化亚铜(γ-CuI)是一种带隙为3.1 eV的p型半导体材料, 适合应用于发光二极管和太阳能电池等光电子器件。本研究利用简单的铜膜碘化法制备了CuI薄膜, 探究了碘化时间、温度及铜/碘比等生长条件对其透明导电性能的影响。在最优碘化时间(30 min)和碘化温度(120℃)下, 制备出了高透过率(可见光范围>75%)、导电性能好(电阻率4.4×10^-2 Ω·cm)的CuI薄膜。利用CuI薄膜作为空穴传输层, 组装了CuI/CH₃NH₃PbI₃/PCBM反型平面钙钛矿电池, 获得的最高光电转换效率为8.35%, 讨论了CuI薄膜透明导电性能对钙钛矿电池光电转换效率的影响机理。     

Novel Synthesis,Coating, and Networking of Curved Copper Nanowires for Flexible Transparent Conductive Electrodes

In this work, a whole manufacturing process of the curved copper nanowires (CCNs) based flexible transparent conductive electrode (FTCE) is reported with all solution processes, including synthesis, coating, and networking. The CCNs with high purity and good quality are designed and synthesized by a binary polyol coreduction method. In this reaction, volume ratio and reaction time are the significant factors for the successful synthesis. These nanowires have an average 50 nm in width and 25–40 μm range in length with curved structure and high softness. Furthermore, a meniscus‐dragging deposition (MDD) method is used to uniformly coat the well‐dispersed CCNs on the glass or polyethylene terephthalate substrate with a simple process. The optoelectrical property of the CCNs thin films is precisely controlled by applying the MDD method. The FTCE is fabricated by networking of CCNs using solvent‐dipped annealing method with vacuum‐free, transfer‐free, and low‐temperature conditions. To remove the natural oxide layer, the CCNs thin films are reduced by glycerol or NaBH₄ solution at low temperature. As a highly robust FTCE, the CCNs thin film exhibits excellent optoelectrical performance (T = 86.62%, R _s = 99.14 Ω ^?1), flexibility, and durability (R/R ₀ < 1.05 at 2000 bending, 5 mm of bending radius).     

填充银纳米线各向同性导电胶的性能

以Ti (OC₄H₉)₄ 水解形成的溶胶体系为模板, 以AgNO₃ 为银纳米线的前驱体, 低温下合成长径比为50～60 的银纳米线, 采用TEM 和XRD 对所制得的银纳米线进行表征。以银纳米线作为导电胶的导电填料, 成功制备了一种高电导率的各向同性导电胶。导电胶的电学性能和力学性能测试表明: 这种导电胶在导电填料含量为56 wt %时的电导率比填充75 wt %微米银粒子的导电胶高约6 倍(体积电阻率为1. 2 ×10-4Ω·cm) 。由于填料含量的降低, 该导电胶的抗剪切强度(以Al 为基板时的抗剪切强度为17. 6 MPa) 相比于填充75 wt %微米银粒子和75 wt %纳米银粒子导电胶均有不同程度的提高。      

Large scale, highly conductive and patterned transparent films of silver nanowires on arbitrary substrates and their application in touch screens

The application of silver nanowire films as transparent conductive electrodes has shown promising results recently. In this paper, we demonstrate the application of a simple spray coating technique to obtain large scale, highly uniform and conductive silver nanowire films on arbitrary substrates. We also integrated a polydimethylsiloxane (PDMS)-assisted contact transfer technique with spray coating, which allowed us to obtain large scale high quality patterned films of silver nanowires. The transparency and conductivity of the films was controlled by the volume of the dispersion used in spraying and the substrate area. We note that the optoelectrical property, σ(DC)/σ(Op), for various films fabricated was in the range 75-350, which is extremely high for transparent thin film compared to other candidate alternatives to doped metal oxide film. Using this method, we obtain silver nanowire films on a flexible polyethylene terephthalate (PET) substrate with a transparency of 85% and sheet resistance of 33 Ω/sq, which is comparable to that of tin-doped indium oxide (ITO) on flexible substrates. In-depth analysis of the film shows a high performance using another commonly used figure-of-merit, Φ(TE). Also, Ag nanowire film/PET shows good mechanical flexibility and the application of such a conductive silver nanowire film as an electrode in a touch panel has been demonstrated.     

有机-无机透明导电薄膜的研究进展

透明导电膜是一种重要的光电材料,应用广泛.以传统的无机氧化物和导电高分子材料制备的导电薄膜虽然电学性能优良,但综合性能不甚理想.通过有机-无机杂化的透明导电薄膜能够借助各组成材料特性的互补作用使复合材料具有出色的综合性能.介绍了透明导电薄膜的种类、用途和特性,综述了有机-无机杂化导电材料在块体材料和透明导电薄膜方面的应用,并展望了其发展前景.     

镍包碳纤维填充导电橡胶薄膜的制备及性能

采用喷涂法制备了镍包碳纤维(CF@Ni)填充型柔性导电橡胶薄膜,探究了球形Ni粉颗粒对导电橡胶流动性及导电性的影响,研究了导电CF@Ni/橡胶薄膜的抗折叠性能以及薄膜与铝合金基体之间黏附强度。结果表明:以CF@Ni为主掺杂少量球形Ni的复合填料所制备的导电橡胶薄膜,电阻率在10-1Ω·cm级别;且随Ni粉增加,其电阻率不发生显著变化,但液态导电CF@Ni/橡胶流动性明显提高;喷涂获得的薄膜在0.2 MPa压力经100次折叠周期后,其导电性无明显下降;喷涂薄膜与铝合金基体之间的黏附强度约为0.219 MPa。所制备的导电CF@Ni/橡胶薄膜具有良好的导电性和抗折叠性能,导电橡胶薄膜中CF@Ni起主要导电作用,球形Ni粉不影响薄膜导电性,但在喷涂过程中有"润滑"作用,提高了喷涂效率。     

A Deformable and Highly Robust Ethyl Cellulose Transparent Conductor with a Scalable Silver Nanowires Bundle Micromesh

Huge challenges remain regarding the facile fabrication of neat metallic nanowires mesh for high‐quality transparent conductors (TCs). Here, a scalable metallic nanowires bundle micromesh is achieved readily by a spray‐assisted self‐assembly process, resulting in a conducting mesh with controllable ring size (4–45 µm) that can be easily realized on optional polymer substrates, rendering it transferable to various deformable and transparent substrates. The resultant conductors with the embedded nanowires bundle micromesh deliver superior and customizable optoelectronic performances, and can sustain various mechanical deformations, environmental exposure, and severe washing, exhibiting feasibility for large‐scale manufacturing. The silver nanowires bundle micromesh with explicit conductive paths is embedded into an ethyl cellulose (EC) transparent substrate to achieve superior optoelectronic properties endowed by a low amount of incorporated nanowires, which leads to reduced extinction cross‐section as verified by optical simulation. A representative EC conductor with a low sheet resistance of 25 Ω □^?1, ultrahigh transmittance of 97%, and low haze of 2.6% is attained, with extreme deformability (internal bending radius of 5 µm) and waterproofing properties, opening up new possibilities for low‐cost and scalable TCs to replace indium‐tin oxide (ITO) for future flexible electronics, as demonstrated in a capacitive touch panel in this work.