树脂含量对半无机型无铬无取向硅钢涂层性能的影响

本文研究了丙烯酸树脂含量对以Al(H2PO4)3为基料的无铬无取向硅钢绝缘涂层各项性能的影响.用盐雾实验、动电位极化及交流阻抗等试验手段研究了不同树脂含量对硅钢绝缘涂层的耐盐雾性能和电化学行为的影响,同时采用SEM对涂层的表面形貌和附着性进行研究.结果表明,树脂含量为19.9~29.4%时,涂层的耐蚀性和附着性最好;树脂含量过多时,涂层的耐蚀性和附着性均较差.     

添加硼酸和钨酸铵对取向硅钢无铬绝缘涂层的影响

本工作研究了添加硼酸和钨酸铵对取向硅钢无铬绝缘涂层的显微组织和性能的影响.结果表明:在无铬磷酸盐绝缘涂液中适当地加入硼酸和钨酸铵可以显著提高涂液在取向硅钢基片上的润湿性,绝缘涂层表面变得致密光滑,且提高了涂层与硅钢基片的结合质量.涂液中复合添加2.0％(质量分数)硼酸和0.5％(质量分数)钨酸铵所制备的绝缘涂层对硅钢的综合性能提升效果最好,含有该涂层的取向硅钢的叠装系数为98.2％,铁损P17/50为1.155 W·kg-1,磁感应强度B8为1.876 T,层间电阻为19366Ω·mm2.此外,绝缘涂层的耐吸湿性和硅钢的耐腐蚀性也有所提高.     

硅钢绝缘涂层的研究进展

本文系统介绍了取和硅钢与无取向硅钢表面绝缘涂层，包括有机涂层，无机涂层和半无机涂层三大类，无机涂层和半无机涂层三大类，无机涂层具有良好的耐热和焊接性能，介其冲制性和粘结性不佳，半无机涂层具有良好的冲制性和粘结性，但共耐热性和焊接不及无机涂层，另外，最新研究的取向硅钢表面物理气相沉积ＴｉＮ，ＣｒＮ和ＴｉＣ绝缘涂层要使硅钢获得极低铁损，大大提高了硅钢的磁通量密度，并具有优异的耐热，焊接，冲制和粘结性。     

ZnO对无铬无取向硅钢绝缘涂层性能的影响研究

主要研究了氧化锌对以Al(H2PO4)3为基料的无铬无取向硅钢绝缘涂层各项性能的影响.用盐雾实验和动电位极化研究了不同氧化锌含量对硅钢绝缘涂层的耐蚀性和电化学行为的影响.采用SEM和体视显微镜对涂层的表面形貌和附着性能进行研究.结果表明,氧化锌含量为4.0%时,氧化锌能完全中和涂层表面的游离磷酸,涂层的耐蚀性和附着性最好;氧化锌含量过少或过多时,涂层的耐蚀性和附着性都较差.     

硅钢绝缘涂层的研究进展

本文系统介绍了取向硅钢与无取向硅钢表面绝缘涂层，包括有机涂层、无机涂层和半无机涂层三大类。无机涂层具有良好的耐热和焊接性能，但其冲制性和粘结性不佳。半无机涂层具有良好的冲制性和粘结性，但其耐热性和焊接性不及无机涂层。另外，最新研究的取向硅钢表面物理气相沉积ＴｉＮ、ＣｒＮ和ＴｉＣ绝缘涂层可使硅钢获得极低的铁损，大大提高了硅钢的磁通量密度，并具有优异的耐热、焊接、冲制和粘结性。     

无取向硅钢表面绝缘涂层

无取向硅钢表面绝缘涂层包括有机涂层、无机涂层和半无机涂层三大类。无机涂层的基本成分是磷酸盐涂料和磷酸铝涂料中添加胶态二氧化硅、氧化镁和硼酸，它具有良好的耐热和焊接性能，但冲制性和粘结性不佳。半无机涂层基本成分为磷酸盐、铬酸盐、乳胶树脂溶液、弥散促进剂和表面活性剂，其中弥散促进和表面活性剂对涂层的质量有重要作用。半无机涂层具有良好的冲制性和粘结性，但其耐热性和焊接性不及无机涂层，有机涂层则已被逐渐淘     

含硅有机-无机复合涂层对铝合金的保护作用

为了改善铝合金材料的耐腐蚀性能,采用正硅酸乙酯为主要原料制备溶胶,涂覆于铝合金基体表面,经过适当处理后形成了具有有机-无机复合结构的涂层.采用电化学法、扫描电镜(SEM)等手段研究了涂层性能.结果表明,该涂层兼容了有机和无机成分的特点,涂覆试样的腐蚀电流密度可达(4.26～6.58)×10-6 A/cm2,显示涂层对于铝合金基体具有与现行的含Cr(Ⅵ)传统表面处理工艺相当的保护效果.涂层有效地减缓了铝合金在含NaCl中性水溶液中的腐蚀,能够对铝合金基体提供有效的保护.本工艺不产生有害化学物质,是一项绿色环保工艺.     

Er2O3阻氚涂层的化学溶液法制备研究

由于具有高的绝缘性和热力学稳定性,近年来氧化铒( Er2O3)作为一种新型的阻氚渗透涂层材料受到极大的研究重视.本文采用化学溶液法在316L不锈钢基体上制备了Er2O3阻氚涂层,研究了前躯体液pH值、浓度和晶化处理气氛对涂层结构和性能的影响.结果表明,前躯体液在pH值为7.6～7.8、浓度为0.4 mol/L进行涂覆并在空气气氛中进行晶化处理,可获得表面连续、致密的Er2O3阻氚涂层,涂层与基体的结合力达到7.8 N,涂层绝缘电阻率为106 Ω·m～109Ω·m,绝缘性能、抗热冲击性能良好.     

等离子喷涂炭/炭复合材料Cr-Al-Si涂层显微结构及高温抗氧化性能

采用等离子喷涂法在涂覆SiC内涂层的炭/炭复合材料表面制备了Cr-Al-Si外涂层。采用XRD和SEM分析了涂层的物相组成及微观结构, 并测试了复合涂层炭/炭复合材料试样在1500℃静态空气中的抗氧化性能。结果表明: 合金外涂层主要由Al_3.21Si_0.47、 Cr₃Si及Al₂O₃组成, 厚度约为120μm, 无穿透性裂纹; 多孔结构单一β-SiC内涂层的防氧化能力较差, 氧化10h后涂层试样的氧化失重就接近10%, 外加Cr-Al-Si涂层后, 涂层试样的氧化性能显著提高, 氧化61 h后试样的失重仅为5.3%。      

水基浆料涂覆结合原位反应制备Cf/SiC复合材料表面光学涂层

本研究提出一种C_f/SiC复合材料表面改性新方法为水基浆料涂覆结合原位反应烧结工艺。系统研究了SiC和炭黑在水基浆料中的共分散、粘结剂的量和浆料固含量对浆料流变性能的影响、涂层的微观结构和性能等。研究结果表明: 采用水基浆料涂覆工艺可在基材表面制备一层气孔率达49%的多孔C/SiC预涂层; 通过液相渗硅原位反应工艺, 多孔预涂层转变为高致密、与基材强结合的光学涂层, 并且在涂层与基材间形成了~ 15 μm的化学反应过渡层; Si/SiC涂层的维氏硬度为(14.19 ± 0.46) GPa, 断裂韧性为(3.02 ± 0.30) MPa·m^1/2; 经过精细研磨抛光, 涂层的表面粗糙度可达2.97 nm RMS。     

钛合金表面微弧氧化纳米防污涂层及性能研究

利用微弧氧化技术,在Ti-6Al-3Nb-2Zr合金表面成功制备出纳米防污陶瓷涂层。采用扫描电镜、透射电镜和光学显微镜分析了纳米防污涂层的表面形貌、微观形态和氧化层厚度,采用X射线光电子能谱和X射线能谱仪对防污涂层的元素价态和化学组成进行了分析,采用WS-1型划痕试验机和数字万用表研究了涂层的结合强度和绝缘性,并采用TE66微磨损试验机和进行天然海水挂片试验考察了涂层的摩擦学性能和防污性能。结果表明:防污涂层厚度可达到20μm以上,涂层有非晶和20—50 nm纳米晶TiO2及Cu2O构成,膜基结合强度达到50 MPa,涂层绝缘性和耐磨性良好,防污性能得到明显改善,挂片6个月后涂层表面仅有少量海生物附着,而裸钛合金样品挂片3个月后则完全被海生物附着。     

钨酸钠对取向硅钢绝缘涂层性能的影响

采用扫描电镜、爱波斯坦方圈、绝缘电阻测试仪、红外光谱仪和热分析仪等手段研究取向硅钢绝缘涂液中钨酸钠对制备的磷酸盐绝缘涂层微结构和性能的影响。结果表明:随着钨酸钠含量的逐渐增加,涂液与取向硅钢基底的润湿角先减小后增大;取向硅钢的层间电阻、叠装系数和磁感应强度均先增大后减小,铁损先减小后增大。当钨酸钠含量为2.0%(质量分数)时,涂液与硅钢基底的润湿性能最好,润湿角为39.3°;涂层致密、平整,绝缘涂层与硅酸镁底层之间存在0.8μm左右的过渡层,而且涂层的耐吸湿性能并不产生显著变化;取向硅钢的层间电阻、叠装系数、磁感应强度和铁损均达到最佳值,分别为14073Ω·mm~2,97.0%,1.893T和1.051W·kg~(-1)。     

Cathodes Coating Layer with Li-Ion Diffusion Selectivity Employing Interactive Network of Metal-Organic Polyhedras for Li-Ion Batteries (Small 5/2023)

Surface modification of cathodes using Ni-rich coating layers prevents bulk and surface degradation for the stable operation of Li–ion batteries at high voltages. However, insulating and dense inorganic coating layers often impede charge transfer and ion diffusion kinetics. In this study, the fabrication of dual functional coating materials using metal–organic polyhedra (MOP) with 3D networks within microporous units of Li–ion batteries for surface stabilization and facile ion diffusion is proposed. Zr-based MOP is modified by introducing acyl groups as a chemical linkage (MOPAC), and MOPAC layers are homogenously coated by simple spray coating on the cathode. The coating allow the smooth transport of electrons and ions. MOPAC effectively suppress side reactions between the cathode and electrolyte and protect active materials against aggressive fluoride ions by forming a Li–ion selective passivation film. The MOPAC-coated Ni-rich layered cathode exhibited better cycle retention and enhanced kinetic properties than pristine and MOP-coated cathodes. Reduction of undesirable gas evolution on the cathode by MOPAC is also verified. Microporous MOPAC coating can simultaneously stabilize both the bulk and surface of the Ni-rich layered cathode and maintain good electrochemical reaction kinetics for high-performance Li–ion batteries.     

KH-560改性SiO2绝缘薄膜的制备及性能研究

软磁合金是新一代质子/重离子同步加速器加速器的核心材料,在其表面涂覆绝缘涂层可有效降低高频涡流损耗。同时,高温热处理(~600 ℃)可有效减少软磁合金冷压成形产生的缺陷和位错而引起的内部残余应力。因此,软磁合金用绝缘涂层还需满足耐高温要求。SiO₂涂层是最常见的无机涂层材料,具有良好的绝缘性能和耐高温性能。本工作在植酸催化TEOS+MTES制备硅溶胶的基础上,加入硅烷偶联剂KH-560进一步提高硅溶胶的成膜性能,系统研究了KH-560对SiO₂涂层结构与性能的影响,并系统分析了KH-560提高SiO₂涂层性能的机理。研究表明,添加适量的KH-560可有效提高薄膜的稳定性和成膜性。特别是当KH-560添加量为0.04 mol时,SiO₂涂层质量最好,SiO₂-0.04 KH涂层表现出最佳的耐腐蚀性和电绝缘性。在100 V时,SiO₂-0.04 KH涂层的方块电阻仍保持2.95×10¹¹Ω/□。综上,本研究利用植酸催化和KH-560改性协同作用制备出高质量的SiO₂涂层,涂层具有良好的耐高温和优异的绝缘性能。     

Characterization of silicon oxide gas barrier films with controlling to the ion current density (ion flux) by plasma enhanced chemical vapor deposition

Silicon oxide gas barrier films were deposited on polyethylene terephthalate (PET) substrates by plasma enhanced chemical vapor deposition (PE-CVD) for applications to transparent barrier packaging. The barrier properties of the silicon oxide coated film were optimized by varying the bias conditions and input power in the radio frequency plasma. The plasma diagnostics, ion current density and substrate temperature were characterized by optical emission spectrometry (OES), an oscilloscope and thermometer, respectively. The coating properties were examined by Fourier transform infrared (FT-IR) spectroscopy and the water vapor transmission rate (WVTR). A high intensity of O and H ions and a high ion current density (ion flux) with a low temperature plasma process were found to be suitable for improving the barrier properties of the silicon oxide film coatings. The Si-O cage-like structure adversely affected the gas barrier properties of the deposited coating. The energy provided by ion bombardment (ion flux) can induce changes in the film density and composition similar to those that may occur by the increase in deposition temperature through rf bias. In addition, the film properties depend not only on a high ion current density (ion flux) and input power, but are also related to a silicon oxide film with a widely distributed planar ring size.     

ATO/APU纳米复合透明隔热涂料的制备与性能研究

以纳米氧化锡锑(ATO)水性浆料为隔热材料,水性聚氨酯树脂(APU)为成膜物质制备出ATO/APU纳米复合透明隔热涂料。对悬浮ATO粒子的分散稳定性,ATO/APU复合涂膜的物理性能,可见光-近红外透射光谱透过率,隔热性能进行研究。结果表明,纳米ATO粉体通过偶联剂KH-550改性后,与APU复合制得了分散稳定的纳米复合涂料;ATO/APU复合涂料不仅具有良好的成膜性能,而且在保持可见光透过率83.0%时,红外阻隔率达到70%,隔热后温差能保持在6℃左右,复合涂料具有良好的隔热性能。     

定向纳米碳管表面有机和无机膜的制备

在AAO ( 阳极氧化铝 ) 模板上的定向纳米碳管表面制备了有机和无机膜。一种是采用真空蒸镀的方法沉积酞菁铜 ( CuPc ) 有机膜,另一种是用电沉积的方法在碳管表面沉积钴金属膜。对所镀的膜层进行了扫描电镜和透射电镜观察,结果表明:在纳米碳管表面获得了均匀的有机和无机涂层。它们的区别是蒸镀方法使纳米碳管背面不能获得涂层,而电镀方法能在整根纳米碳管上获得均匀涂层。      

Amorphous silicon carbide thin films (a-SiC:H) deposited by plasma-enhanced chemical vapor deposition as protective coatings for harsh environment applications

We investigated amorphous silicon carbide (a-SiC:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) as protective coatings for harsh environment applications. The influence of the deposition parameters on the film properties was studied. Stoichiometric films with a low tensile stress after annealing (< 50 MPa) were obtained with optimized parameters. The stability of a protective coating consisting of a PECVD amorphous silicon oxide layer (a-SiO_x) and of an a-SiC:H layer was investigated through various aging experiments including annealing at high temperatures, autoclave testing and temperature cycling in air/water vapor environment. A platinum-based high-temperature metallization scheme deposited on oxidized Si substrates was used as a test vehicle. The a-SiO_x/a-SiC:H stack showed the best performance when compared to standard passivation materials as amorphous silicon oxide or silicon nitride coatings.     

Langmuir-Blodgett films in amorphous silicon MIS structures

In this paper we describe the properties of MIS structures based on hydrogenated amorphous silicon (a-Si:H) and organic films deposited using the Langmuir-Blodgett technique. Results are reported for undoped a-Si:H passivated with an insulating film of cadmium stearate 80 nm thick. The deposition of the monolayers was found to be critically dependent on the surface condition of the semiconductor.The capacitance data display well-defined accumulation and depletion regions and suggest that inversion is obtained when the device is reverse biased. The conductance data are similar in shape to those observed for conventional MOS structures on crystalline silicon. However, hysteresis and frequency dispersion effects complicate their interpretation in terms of surface state densities.From this preliminary investigation we conclude that useful MOS devices incorporating both thick and thin insulating layers can be based on the a-Si:H/Langmuir-Blodgett film system.