气溶胶辅助化学气相沉积制备Al掺杂ZnO透明导电薄膜

采用气溶胶辅助化学气相沉积(AACVD)法在玻璃衬底上制备了Al掺杂ZnO(AZO)薄膜. 研究了Al掺杂(2at%~8at%)对ZnO薄膜结构及光电性能的影响. 利用XRD、SEM、EDAX、紫外可见分光光度计等手段对样品进行测试. 结果表明, 制备的所有AZO薄膜均具有纤锌矿结构, 不具有沿c轴方向的择优取向, XRD图谱中未观察出Al的相关分相. 在可见光范围内, AZO薄膜的平均透过率大于72%, 光学禁带宽度随Al掺杂量的增加而变窄. 同时根据四探针技术所得的数据得知: Al的掺杂导致薄膜方块电阻的变化, 随着Al掺杂量的增加, 方块电阻有明显变小的现象, 掺杂6at%Al的AZO薄膜具有最低方块电阻(18Ω/□).     

Al掺杂ZnO薄膜的微结构及光学特性研究

采用射频磁控溅射方法在玻璃衬底上制备出不同Al掺杂量的ZnO(AZO)薄膜。利用X射线衍射(XRD)、扫描电子显微镜(SEM)和光致荧光发光(PL)等系统研究了不同Al掺杂量对ZnO薄膜的结晶性能、表面形貌和光学特性等的影响。结果显示,随着Al掺杂量的增加,薄膜的(002)衍射峰先增强后减弱,同时出现了(100)、(101)和(110)衍射峰,表明我们制备的AZO薄膜为多晶纤锌矿结构,适量的Al掺杂可提高ZnO薄膜的结晶质量,然而AZO薄膜的表面平整、晶粒致密均匀。薄膜在紫外-可见光范围的透过率超过90%,同时随着Al掺杂量的增加,薄膜的光学带隙值先增大,后减小。这与采用量子限域模型对薄膜的光学带隙作出相应的理论计算所得结果的变化趋势完全一致。     

磁控溅射Al掺杂ZnO薄膜结构及光电性能研究

采用磁控溅射法在石英玻璃衬底上制备不同铝(Al)掺杂量的铝掺氧化锌(AZO)薄膜。利用X射线衍射仪、原子力显微镜、四探针测试仪和透射光谱仪等手段研究了不同Al掺杂量对AZO薄膜结构、形貌、电学和光学性能的影响。结果表明,所有样品均为ZnO六方纤锌矿晶体结构,具有较好的c轴择优取向;随着Al掺杂量的增加,薄膜结晶稍有变差,电阻率逐渐降低,透过率逐渐增加。当Al掺含量为3%(vol,体积分数)时,AZO薄膜的综合性能更好,电阻率约3.52×10~(-3)Ω·cm,平均透光率可达到80%,光学禁带宽度达到3.23eV。     

不同铝掺杂量ZnO薄膜性能的研究

以铝掺杂质量分数为1%、2%、3%的Zn/Al合金为靶材,采用直流反应磁控溅射技术在玻璃衬底上制备了不同铝含量ZnO:Al(AZO)透明导电薄膜。研究了衬底温度对AZO薄膜电学性能的影响;同时,研究铝掺杂量不同、电阻率相同的AZO薄膜的载流子浓度与迁移率的关系。结果表明:随着Al掺杂量的增加,薄膜最佳性能(透过率90%,电阻率6×10-4Ω·cm左右)时的衬底温度值会降低;电阻率相同的样品,1%铝掺杂的薄膜迁移率和透光率均高于2%铝掺杂薄膜的。     

直流射频耦合制备微纳结构AZO薄膜及其性能研究

采用直流射频耦合磁控溅射法结合线棒刮涂法在玻璃衬底上室温生长微纳结构铝掺杂氧化锌(AZO)薄膜,底层AZO薄膜射频功率占比从50%调整到90%。通过扫描电子显微镜(SEM)、X射线衍射仪(XRD)、霍尔效应测试系统、紫外可见分光光度计、光电雾度仪重点研究了AZO薄膜的表面形貌、晶体结构、电学性能和光学性能。研究结果表明,提高底层AZO薄膜射频功率占比对微纳结构AZO薄膜光电性能有显著的影响,底层AZO薄膜射频功率占比80%时薄膜表现最低电阻率5.32×10~(-4)Ω·cm,可见光波段平均光学雾度36.3%。随着底层AZO薄膜射频功率占比的增加,薄膜表面形貌、生长形态和结晶性能发生较大变化,并得到具有陷光作用且光电性能优良的微纳结构AZO薄膜。     

Al浓度对AZO薄膜结构和光电性能的影响

采用射频溅射方法在Si基片上制备出AZO掺杂薄膜,对薄膜进行了XRD和AFM分析,并对其电性能作了研究.结果表明,掺杂量低于15%(原子分数)时,AZO薄膜结构为纤锌矿结构,呈c轴方向择优生长,没有Al2O3相出现.薄膜的可见光透过率均在80%以上,其最高电阻率出现在掺杂量为30%(原子分数),为1.3×107 Ω·cm.     

溅射氩气压对射频磁控溅射制备ZnO∶Al薄膜性能的影响

采用磁控溅射方法在玻璃衬底上使用掺杂3%(质量分数)Al2O3的ZnO陶瓷靶材制备出了掺铝氧化锌(ZnO∶Al,AZO)透明导电薄膜。分别用XRD、SEM、四探针测试仪、紫外-可见分光光度计对薄膜的性能进行了表征和分析。研究了溅射过程中不同氩气压强(0.3~1.2Pa)对薄膜结构、形貌及光电性能的影响。XRD测试结果表明,所制备的薄膜均具有呈c轴择优取向的纤锌矿结构。当氩气压强为0.3Pa时,AZO薄膜的电阻率最低为6.72×10-4Ω·cm。所有样品在可见光波段的平均透过率超过85%。     

Al掺杂ZnO薄膜的制备及其电学性能研究

采用溶胶-凝胶法在玻璃基底上制备掺杂铝的氧化锌薄膜.研究了不同的铝掺杂浓度、薄膜厚度以及退火温度对电阻率的影响,结果表明掺杂铝摩尔分数为2%、退火温度在550℃时电阻率最低,电阻率随着薄膜厚度的增加而减小.通过XRD和SEM对薄膜的组织结构和形貌进行了表征,结果表明样品表面相对平整、致密,AZO薄膜保持着ZnO六角纤锌矿结构,说明了Al原子对Zn原子的有效替位.     

Ar流量对磁控溅射制备Al掺杂ZnO薄膜的影响

Al掺杂ZnO(AZO)具有电导率高、光学透射率高的优点,且原料来源丰富、制备成本低廉,被认为是最有应用潜力的透明导电薄膜。本文利用射频磁控溅射制备30 cm×30 cm尺寸大面积AZO薄膜,研究了气压恒定时,Ar流量对薄膜晶粒生长机制、电学和光学性能的影响。结果表明,AZO薄膜晶粒均表现出垂直基片方向的c轴择优取向生长,随Ar流量增大取向变弱;薄膜表面晶粒尺寸大小分布不均匀,随Ar流量增大,大晶粒数量增多,表面出现长度为100 nm、宽度为30 nm的棒状晶;随着Ar流量增大,载流子浓度由4.52×1020 cm-3略微增大至6.2×1020 cm-3,霍尔迁移率由4.79 cm2(/V·s)提升至10.46 cm2(/V·s),电阻率在Ar流量94 mL/min时达到最低值1.01×10-3Ω·cm。薄膜可见光平均透射率均大于78%,禁带宽度约3.8 eV。     

直流磁控溅射有机衬底和玻璃衬底ZnO∶Al薄膜结构及特性的研究

利用直流磁控溅射法在有机薄膜衬底和普通玻璃衬底上制备出了具有良好附着性的ZnO∶Al透明导电膜,对制备薄膜的结构和光学特性进行了比较研究.研究发现:铝掺杂的氧化锌薄膜是多晶膜,具有六角纤锌矿结构;在衬底温度为100℃,溅射压强1.0 Pa,氧氩比为1∶2.58时,ZnO∶Al薄膜具有(002)择优取向,晶化也比较好,在可见光区的平均透过率分别达到了77.6%和82%.     

热处理温度和掺杂浓度对AZO薄膜微结构的影响

采用溶胶-凝胶法在普通裁玻片上制备了（002）择优取向的AZO薄膜,研究了不同的热处理温度和掺杂浓度对薄膜微结构的影响。利用XRD和SEM表征了AZO薄膜晶体结构的择优取向和表面形貌。结果表明,热处理温度为450℃,择优取向最强,热处理温度高于或低于450℃时,择优取向都减弱;当掺杂浓度为2％时,AZO的择优取向最强,随着Al掺杂浓度的增大,薄膜的晶粒尺寸减小,薄膜变得更加致密。     

Nonlinear optical investigations on Al doping ratio in ZnO thin film under pulsed Nd:YAG laser irradiation

In the present study, it has been reported on the effect of Al doping on linear and nonlinear optical properties of ZnO thin films synthesized by spray pyrolysis method. The structural properties of ZnO thin films with different Al doping levels (0–4 wt%) were analyzed using X-ray diffraction (XRD). The results obtained from XRD analysis indicated that the grain size decreased as the Al doping value increased. The UV–Vis diffused refraction spectroscopy was used for calculation of band gap. The optical band gap of Al-doped ZnO (AZO) thin films is increased from 3.26 to 3.31 eV with increasing the Al content from 0 to 4 wt%. The measurements of nonlinear optical properties of AZO thin films have been performed using a nanosecond Nd:YAG pulse laser at 532 nm by the Z-scan technique. The undoped ZnO thin film exhibits reverse saturation absorption (RSA) whereas the AZO thin films exhibit saturation absorption (SA) that shows RSA to SA process with adding Al to ZnO structure under laser irradiation. On the other hand, all the films showed a self-defocusing phenomenon because the photons of laser stay on below the absorption edge of the ZnO and AZO films. The third-order nonlinear optical susceptibility, χ⁽³⁾, of AZO thin films, was varied from of the order of 10^?5–10^?4 esu. The results suggest that AZO thin films may be promising candidates for nonlinear optical applications.     

添加剂元素对AZO薄膜性能的研究进展

近年来,国内外一些研究者对添加剂元素与铝元素共掺杂的ZnO薄膜开展了许多研究并发现在AZO薄膜掺入添加剂元素不仅会增强AZO薄膜的光电特性,而且还能优化其晶体结构和表面形貌,某些添加剂元素还可以提高AZO薄膜的多项性能和稳定性,这对研究AZO薄膜性能的提高提供了一个更具潜力的研究方向。介绍了AZ0薄膜的基本结构、基本特性以及光电性能原理。对添加剂元素对AZO薄膜结构的研究和光电性能的研究进行了归纳和总结,并且与AZO薄膜进行了对比。综述了添加剂元素掺人的AZO薄膜目前所采用的磁控溅射法、溶胶一凝胶法和脉冲激光法三种主要制备技术以及其优缺点,同时阐述了不同方法掺人添加剂元素的AZO薄膜的研究进展。最后介绍了添加剂元素掺入的AZO薄膜在光电领域的应用,展望了其未来发展与研究趋势。     

Improvements of spatial resistivity distribution in transparent conducting Al-doped ZnO thin films deposited by DC magnetron sputtering

The relationship between two techniques developed for improving the resistivity distribution on the substrate surface in transparent conducting Al-doped ZnO (AZO) thin films prepared at a temperature of 200 °C by dc magnetron sputtering depositions (dc-MSD) using various sintered AZO targets has been investigated. One improvement method superimposes an rf component onto the dc-MSD (rf + dc-MSD). The other improvement method uses conventional dc-MSD with a low resistivity AZO target prepared under optimized conditions. An improvement of resistivity distribution resulted from a decrease in the resistivity of targets used in the preparation of AZO thin films by dc-MSD either with or without superimposing rf power. However, the resistivity distribution of AZO thin films resulting from depositions using rf-superimposed dc-MSD with lower-resistivity targets was not significantly improved over that of AZO thin films prepared by conventional dc-MSD using targets with the same low resistivities. The use of rf superimposition only resulted in improved resistivity distribution in thin films when the AZO targets had a resistivity higher than around 1 × 10^− 3 Ω cm. It should be noted that sintered AZO targets optimized for the preparation of AZO thin films with lower resistivity as well as more uniform resistivity distribution on the substrate surface tended to exhibit a lower resistivity.     

氢化及沉积温度对掺铝ZnO透明导电薄膜性能影响

采用射频磁控溅射方法在玻璃衬底上制备了掺铝ZnO透明导电薄膜(AZO)。为了降低AZO薄膜的电阻率, 采用在溅射气氛中通入一定比例H₂的方法对AZO薄膜进行氢化处理, 并研究了溅射气氛中H₂含量及衬底温度对AZO薄膜氢化效果的影响。结果表明: 在低温条件下, 氢化处理能有效降低AZO薄膜的电阻率; 在衬底温度为100℃的低温条件下, 通过调节溅射气氛中H₂的比例, 制备了电阻率为6.0×10^-4 Ω·cm的高质量氢化AZO薄膜, 该电阻值低于同等条件下未氢化AZO薄膜电阻值的1/3; 但随着衬底温度的升高, 氢化处理对薄膜电学性能的改善效果逐渐减弱。     

薄膜厚度和工作压强对室温制备AZO薄膜性能的影响

采用射频磁控溅射法在室温下、普通玻璃基片上制备了AZO透明导电薄膜。用X射线衍射仪、原子力显微镜、紫外-可见分光光度计和四探针测量了不同薄膜厚度和不同工作压强下所得样品的结构、电学和光学性能,结果表明,所制备的AZO薄膜均具有六角纤锌矿结构,沿c轴择优取向生长;在可见光范围内,薄膜平均透过率约为80%;随着薄膜厚度的增加和工作压强的降低,薄膜的电阻率呈下降趋势;得到的薄膜最低方块电阻为7.5Ω/□。     

The effects of Al doping on the optical constants of ZnO thin films prepared by spray pyrolysis method

Aluminum doped ZnO (AZO) thin films doped with different aluminum concentrations have been prepared by spray pyrolysis method onto glass substrates. The optical and structural properties of the films have been investigated by X-ray diffraction and optical characterization methods. The X-ray diffraction spectra showed that all of the thin films are of polycrystalline nature. The thin films have (002) as the preferred orientation. The optical band gaps of the films were calculated. The E _g values decrease with increasing Al doping concentration. The refractive index, the extinction coefficient, and the real and imaginary components of dielectric constant are calculated. The obtained results show that all optical parameters keep constant in the visible region, whereas in the ultraviolet region, doping concentration strongly affects the optical parameters of AZO thin films. Optical constants tend to decrease with increasing doping concentration.     

Study of the growth of inorganic and organic electrodes onto polyethylene terephthalate substrates

Aluminum doped ZnO (AZO) 2 wt.% and un-doped ZnO thin films of different thickness were deposited by Pulsed DC Magnetron Sputtering onto Poly-Ethylene Terephthalate (PET) substrates, whereas PEDOT:PSS was spin-coated onto the AZO/PET. The optical properties of the samples were measured by in-situ Spectroscopic Ellipsometry in the Vis-fUV energy range (1.5-6.5 eV), where it was found that the ZnO energy gap decreases after a critical thickness while it remains constant for AZO thin films. Electrical characterization of ZnO films shows that the films exhibit metallic behavior independently of their thickness. Also, High Resolution Transmission Electron Microscopy revealed the growth of polycrystalline ZnO onto PET substrates. Concerning the PEDOT: PSS/AZO/PET materials, the thickness of the AZO films has been found to affects neither the fundamental energy gap nor the other absorption peaks of PEDOT: PSS.     

Effects of Al concentration on microstructural characteristics and electrical properties of Al-doped ZnO thin films on Si substrates by atomic layer deposition

Al-doped ZnO (AZO) thin films with various Al concentrations were synthesized on Si(001) substrates with native oxide layers by atomic layer deposition process. The effects of the Al concentration on the microstructural characteristics of the AZO thin films grown at 250 degrees C and the correlation between their microstructural characteristics and electrical properties of the AZO thin films were investigated by AFM, XRD, HRTEM and Hall measurements. The XRD and HRTEM results revealed that the crystallinity and electrical properties of the undoped ZnO thin films were enhanced by 2.48 at% Al doping. However, 12.62 at% Al doping induced the deterioration of their crystallinity and electrical properties due to the formation of nano-sized metallic Al clusters and randomly oriented ZnO-based nano-crystals. To enhance the electrical properties of the AZO thin films while maintaining their crystallinity and electrical properties, a moderate Al concentration has to be chosen under the solubility limit of Al in ZnO.     

Properties of Sprayed Aluminum-Doped Zinc Oxide Films—A Review

Owing to the low-cost, nontoxicity and abundance, aluminum-doped zinc oxide (AZO) thin films become a better alternative to indium tin oxide (ITO) films. Therefore, development of AZO films with transparent conducting properties comparable to that of ITO is one of the main focuses of material scientists, and hence various ways and means are attempted for the past two decades. Also, the production of cost-effective transparent conducting oxide (TCO) films is a presently engaged task of R&D departments of optoelectronic industries. In this paper, we present a detailed review on the effects of various process parameters on the characteristics of AZO thin films deposited using one of the low-cost fabrication techniques called spray pyrolysis. More than 100 original research articles related to this topic have been surveyed and analyzed critically. Results obtained from our experimental work are compared with the collected data, and an interesting correlation between the properties of AZO films has been found out and reported.