共查询到19条相似文献,搜索用时 683 毫秒
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一维ZnO纳米结构,具有宽带隙半导体性、压电性、室温下大激子束缚能、各向异性、低维结构等特性,故被广泛深入地研究应用于诸多领域。采用各种途径生长的形貌丰富的一维ZnO纳米结构,被广泛应用于纳米发电机、太阳能电池、光电化学分解水、发光二极管、激光器、气体敏感器件、自旋电子器件等领域。然而,本征一维ZnO纳米结构还存在很多缺点,限制其应用范围。通过掺杂可以增强或赋予其某些特殊功能,近年来一维ZnO纳米结构掺杂引起研究者的极大关注。从掺杂类型的角度出发,综述了近年来国内外一维ZnO纳米结构掺杂方面的研究进展,包括n型、p型、稀磁半导体以及其它掺杂,讨论了一维ZnO纳米结构掺杂存在的主要问题,并对进一步研究与开发提出展望。 相似文献
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在金属基板表面电沉积一层金属Zn纳米晶,将该纳米晶置于高温炉中,通过热氧化法成功制备了一维ZnO纳米针。研究了不同的热氧化温度因素对一维ZnO纳米针的制备及其形貌的影响。在本方法中,一维ZnO纳米针材料对应于初始电沉积层的Zn纳米晶颗粒,这与其他方法中ZnO的生长机制不同,可以认为本方法的ZnO的生长遵从自催化扩散机制。同时,研究了一维ZnO纳米针薄膜的场发射效应。 相似文献
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ZnO作为一种被人们广泛研究的具有优良性质的半导体材料,在具有了纳米带状结构之后,展现出了更多的奇特性质。主要介绍了ZnO纳米带的合成以及ZnO纳米带二板管、激光器、微悬臂和声学谐振器等4种基于ZnO纳米带的纳米器件的制作及其性能的研究。 相似文献
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本研究成功地在石墨衬底上制备了低维ZnO材料,即一维的ZnO纳米棒和二维的ZnO薄膜。采用X射线衍射、场发射扫描电镜、光致发光谱和反射谱等测量技术对石墨衬底上制备的低维ZnO纳米材料的晶体结构、形貌和光学特性进行了表征。结果发现在室温条件下,准一维的ZnO纳米棒和二维的ZnO薄膜都表现出了较好的近带边发射,基本探测不到由杂质和缺陷等引起的深能级发光,并且这种低维ZnO材料/石墨衬底复合结构在300~800 nm光谱范围内具有较低的反射率。本实验结果对于ZnO基光电子器件性能的提高以及在太阳能电池领域的应用具有重要意义。 相似文献
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The wide-gap semiconductor ZnO with nanostructures such as nanoparticle, nanorod, nanowire, nanobelt, nanotube has high potential for a variety of applications. This article reviews the fundamentals of one-dimensional ZnO nanostructures, including processing, structure, property, application and their processing-microstructure-property correlation. Various fabrication methods of the ZnO nanostructures including vapor-liquid-solid process, vapor-solid growth, solution growth, solvothermal growth, template-assisted growth and self-assembly are introduced. The characterization and properties of the ZnO nanostructures are described. The possible applications of these nanostructures are also discussed. 相似文献
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One-dimensional (1D) zinc oxide (ZnO) nanostructures have been extensively and intensively studied for several decades not only for their extraordinary chemical and physical properties, but also for their current and future different electronic and optoelectronic device applications. This review provides a brief overview of the progress of different synthesis methods and applications of 1D-ZnO nanostructures. Morphology of ZnO nanostructures grown by various methods and progress in the optical properties are briefly described. Using low-temperature photoluminescence (LTPL) study, detailed informations about the defect states and impurity of such nanostructures are reported. Improvement of field emission properties by modifying the edge of 1D-ZnO nanostructures is briefly discussed. Applications such as different sensors, field effect transistor, light-emitting diodes (LEDs), and photodetector are briefly reviewed. ZnO has large exciton binding energy (60 meV) and wide band gap (3.37 eV), which could lead to lasing action based on exciton recombination. As semiconductor devices are being aggressively scaled down, ZnO 1D nanostructures based resistive switching (RS) memory (resistance random access memory) is very attractive for nonvolatile memory applications. Switching properties and mechanisms of Ga-doped and undoped ZnO nanorods/NWs are briefly discussed. The present paper reviews the recent activities of the growth and applications of various 1D-ZnO nanostructures for sensor, LED, photodetector, laser, and RS memory devices. 相似文献
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Recent studies on the growth of ZnO nanostructures and their optical properties were reviewed. Using different methods, a variety of ZnO nanostructures, including quantum dots nanotowers, nanotubes, nanorods, nanowires, and nanosheets, displaying zero, one, and two dimensions, have been synthesized. The growth of ZnO low-dimensional nanostructures has been demonstrated. Their optical properties have been studied by means of room-temperature photoluminescence spectra, low-temperature photoluminescence spectra, temperature-dependent photoluminescence spectra, and pressure-dependent photoluminescence spectra. The optical properties can be adjusted by the surface features of ZnO low-dimensional nanostructures. The strong exciton emission has been observed in some nanostructures, showing promising potential in nanodevice applications. 相似文献
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ZnO是目前已知纳米结构中形态最为多样的多功能材料之一,其一维纳米结构的掺杂改性日益成为研究和应用的热点.本文按照杂质原子引入一维纳米结构ZnO晶格的先后,将ZnO的掺杂分为原位掺杂和后期掺杂两类,对当前一维纳米结构ZnO的掺杂进展进行了回顾,提出掺杂工艺中尚待解决的问题,并对其发展趋势及前景进行了展望. 相似文献
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Controlled synthesis and field emission properties of ZnO nanostructures with different morphologies
Huang YH Zhang Y Liu L Fan SS Wei Y He J 《Journal of nanoscience and nanotechnology》2006,6(3):787-790
By simply controlling atmosphere, rods, tetraleg-rods, and arrays of ZnO nanostructures have been fabricated respectively through pure zinc powder evaporation without catalyst at temperature of 650 - 700 degrees C. Investigations through HRTEM and XRD showed that the growth of the synthesized ZnO nanostructures was controlled by vapor-solid mechanism. Field emission measurements revealed that all of the structures, owing to their very low turn-on voltage, sufficient emission current and proper linearity of 1/V - Ln(l/V2), are likely to be potential candidates as a field emitter. The results also indicated that field emission properties are relative to morphology and size of the tips of ZnO nanostructures, and the nanorods with sharp tips possess the first-class FE property. 相似文献
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Muthukumar S. Haifeng Sheng Jian Zhong Zheng Zhang Emanetoglu N.W. Yicheng Lu 《Nanotechnology, IEEE Transactions on》2003,2(1):50-54
ZnO is a wide bandgap semiconductor with a direct bandgap of 3.32eV at room temperature. It is a candidate material for ultraviolet LED and laser. ZnO has an exciton binding energy of 60 meV, much higher than that of GaN. It is found to be significantly more radiation hard than Si, GaAs, and GaN, which is critical against wearing out during field emission. Furthermore, ZnO can also be made as transparent and highly conductive, or piezoelectric. ZnO nanotips can be grown at relatively low temperatures, giving ZnO a unique advantage over the other nanostructures of wide bandgap semiconductors, such as GaN and SiC. In the present work, we report the selective growth of ZnO nanotips on various substrates using metalorganic chemical vapor deposition. ZnO nanotips grown on various substrates are single crystalline, n-type conductive and show good optical properties. The average size of the base of the nanotips is 40 nm. The room temperature photoluminescence peak is very intense and sharp with a full-width-half-maximum of 120 meV. These nanotips have potential applications in field emission devices, near-field microscopy, and UV photonics. 相似文献
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Xu F Yu K Shi M Wang Q Zhu Z Huang S 《Journal of nanoscience and nanotechnology》2006,6(12):3794-3798
Hierarchical ZnO nanostructures with the morphology of sleeve-fishes have been fabricated on Si substrate through vapor phase transport at 850 degrees C. Studies find that each nansleeve-fish is composed of a screw-shaped microrod and some tapering nanowires grown on the microrod, all of which grow along the [0001] direction. Photoluminescence spectra exhibits strong UV emission around 385 nm without any green emissions detected, indicating that the high-quality ZnO nanostructures with low level of oxygen vacancies are obtained in our experiment. Field-emission measurements on the nanosleeve-fishes show a turn-on field as low as 2.2 V/microm at a current density of 0.1 microA/cm(2) with a anode-sample separation of 600 microm, and the emission current density reached 1 mA/cm(2) at an applied field of about 5.8 V/microm. The excellent field emission properties from such kind of nanostructures make them promising candidates for further applications in FE microelectronic devices. 相似文献
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Silicon nanowire is an important material for the potential use as a cold cathode, but there are some bottlenecks like oxidation of the surface during field emission thereby degradation of its performance. To compete with carbon based nanostructures in this field the performance of Si nanowires as field emitter should be improved. Here, we report a simple technique for the significant improvement of field emission properties of Si nanowires by ZnO nanoparticle coating. Boron-doped p-type Si wafers were chemically etched to synthesize vertically aligned silicon nanowires and they were coated with different thicknesses of ZnO layer by radio frequency magnetron sputtering technique. The nanostructured thin films were studied by X-ray photoelectron spectroscopy for compositional and valence states information while their morphological information was obtained by a field emission scanning electron microscope and a high resolution transmission electron microscope. The field assisted electron emission performance of Si nanowires significantly improved for the thickness optimized ZnO coating. The photoluminescence spectra showed a peak at ~558 nm assigned to surface defect states of ZnO and the field emission from Si nanowires coated with ZnO for different times were correlated with the surface defect structures. The mechanism of such improvement is also discussed. 相似文献