单一取向Cu2O纳米棒的一种工业制备技术

作为一种直接带隙p型半导体材料,Cu2O在很多工业领域都有良好的应用前景,而Cu2O纳米棒因其一维纳米几何而具有更诱人的性能。然而缺少低成本的制备方式限制了Cu2O纳米棒的工业应用。为了解决这个问题,我们探索了热蒸发掠射角沉积加后退火处理的制备方法,成功获得了取向一致的多晶Cu2O纳米棒阵列薄膜,为Cu2O及类似材料的纳米棒薄膜的大规模工业化生产找到了一种低成本的制备技术。     

通过氧化Cu膜制备Cu_2O薄膜

通过热蒸镀Cu膜并在空气中退火制备Cu2O薄膜,利用X射线衍射(XRD)、能量分散X射线谱(EDX)和原子力显微镜(AFM)研究了已沉积和不同温度退火薄膜的晶体结构、成份和表面形貌。结果表明,Cu膜在200℃退火30分钟可以得到具有单一成份的Cu2O薄膜。四探针测量得到所制备的Cu2O薄膜电阻率为0.22Ωcm。用紫外可见光分光光度计(UV-vis)研究了Cu2O薄膜的光学特性,得出其光学带隙为2.4eV。     

SrTiO3斜切基片上外延生长YBa2Cu3O7-δ薄膜的扫描探针显微镜研究

采用激光脉冲沉积法在钛酸锶SrTiO3 (0 0 1)斜切基片上外延生长YBa2 Cu3 O7 δ薄膜 ,在大气环境下采用扫描探针显微镜对YBa2 Cu3 O7 δ薄膜的表面纳米形貌进行直接观察。发现YBa2 Cu3 O7 δ薄膜具有相对光滑的表面形貌 ,薄膜表面由沿SrTiO3台阶趋向外延生长的纳米台阶组成 ,薄膜生长模式主要以台阶媒体生长为主。     

SrTiO3斜切基片上外延生长YBa2Cu3O7—δ薄膜的扫描探针显微镜研究

采用激光脉冲沉积法在钛酸锶SrTiO3（001）斜切基片上外延生长YBa2Cu3O7-δ薄膜，在大气环境下采用扫描探针显微镜对YBa2Cu3O7-δ薄膜的表面纳米形貌进行直接观察。发现YBa2Cu3O7-δ薄膜具有相对光滑的表面形貌，薄膜表面由沿SrTiO3台阶趋向外延生长的纳米台阶组成，薄膜生长模式主要以台阶媒体生长为主。     

氧化亚铜薄膜的研究进展

氧化亚铜（Cu2O）具有优越的光电性质，是一种具有广泛用途的材料，而且它的制备方法很多。结合最近的研究进展综述了Cu2O薄膜的制备方法与基本性质，分析了Cu2O薄膜研究开发现状，展望了Cu2O薄膜在太阳能电池应用方面的前景。     

纳米Cu2+/TiO2抗菌膜对禽流感病毒(H9N2)的灭活效应

利用病毒滴度测定和MDCK细胞电镜观察法,初步探讨了在365nm的黑光灯(UV)照射下,纳米Cu2+/TiO2抗菌膜对禽流感病毒(H9N2)的光催化灭活效应,并分别考察了UV强度、UV照射时间以及H9N2病毒量对H9N2病毒光催化灭活效应的影响.实验结果表明,在365nm黑光灯的照射下,纳米Cu2+/TiO2抗茵膜对H9N2病毒具有显著的灭活效应,在UV强度为0.5mW/cm2、UV照射时间为2.5h、病毒量为0.1ml时,H9N2病毒的灭活率达到了100%.研究结果表明,纳米Cu2+/TiO2抗菌膜在抑制禽流感(H9N2)病毒在环境媒介中的扩散与传播方面有潜在的应用价值.     

抗菌聚丙烯板的制备与性能

目的 制备一种具有抗菌性能的聚丙烯塑料板.方法 以乙酸铜(Cu(CH3COO)2·H2O)和乙酸锌(Zn(CH3COO)2·2H2O)为原料,通过固相反应,生成铜(Cu)接枝在纳米氧化锌(ZnO)上制成Cu/ZnO无机抗菌材料.将抗菌材料与聚丙烯粒料共混、造粒和模压成型制得抗菌聚丙烯板.对Cu/ZnO无机抗菌材料和抗菌聚丙烯板进行扫描电子显微镜(SEM)、傅里叶红外光谱仪(FT-IR)、差示扫描量热仪(DSC)、X射线衍射仪(XRD)、电感耦合等离子体质谱(ICP)、抗菌实验和拉伸、弯曲强度测试,对材料的化学组成、结晶性、抗菌性、力学性能和安全性能进行表征分析.结果 采用抗菌母粒法制备的抗菌聚丙烯板,将抗菌剂分散均匀,抗菌剂的加入没有改变聚丙烯的化学结构.由于界面作用的存在,聚丙烯结晶温度升高,对熔融温度影响不大.力学性能测试表明,抗菌剂的加入使得聚丙烯板拉伸强度略有下降,弯曲强度呈现先上升后下降趋势;当抗菌剂质量分数为4％时,抗菌聚丙烯板具有最佳力学强度,且在此浓度下,抗菌聚丙烯对大肠杆菌和金黄色葡萄球菌的杀菌率均达到99.99％.金属离子在发挥抗菌作用时,迁移量远远低于欧盟规定允许的最大迁移量.结论 将通过固相反应制备的无机抗菌剂添加至聚丙烯粒料中制成抗菌聚丙烯板,将其进一步加工制成的果蔬周转箱可以有效减少箱体在运输中受到污染,如自身发霉长菌等现象,证明该材料具备食品包装的安全性.     

牡蛎贝壳/纳米Cu2O复合材料的制备及性能研究

纳米Cu2O是一种新型半导体光催化剂,在使用时存在容易团聚、难以回收利用等问题。通过原位水解法,采用废弃的牡蛎贝壳粉为载体固定生成的纳米Cu2O,成功制备出牡蛎贝壳/纳米Cu2O复合材料。通过X射线粉末衍射(XRD)、扫描电子显微镜(SEM)及能谱(EDS)和紫外-可见光漫反射等测试手段对材料进行了表征,发现Cu2O颗粒能够紧密地负载在900℃煅烧的牡蛎贝壳粉表面,且颗粒呈球状,平均粒径为37.3nm,禁带宽度为2.01eV,对可见光具有良好的吸收,拓宽了对太阳能的利用范围。研究还表明该复合材料具有良好的杀菌性能。     

Cu薄膜上热氧化法制备CuAl2O4薄膜北大核心CSCD

采用离子束辅助沉积方法在95%(质量比)Al2O3基板上制备Cu薄膜,利用热氧化法使Cu薄膜氧化,并与Al2O3基板反应,制备出CuAl2O4薄膜。通过X射线衍射仪、扫描电子显微镜、能谱仪和X射线光电子能谱仪分别对CuAl2O4薄膜的结构、成分和微观形貌进行了表征。研究结果表明,大气环境下,热氧化温度低于1000℃时,薄膜主要成分为CuO,随着热氧化温度的提升,薄膜成分比例并无较大变化,但是薄膜晶粒在不断增大;热氧化温度为1000℃时,氧化后的Cu薄膜与Al2O3基板开始反应形成CuAl2O4晶体。当热氧化温度为1100℃时反应更加完全,形成纯度较高的CuAl2O4薄膜,且薄膜晶粒尺寸明显增大,薄膜表面Al元素含量增加。     

Cu2O薄膜的制备与表征

以透明导电玻璃ITO和铜片为工作电极,用0.1mol/L乙酸铜和0.02mol/L乙酸钠的混合溶液作为电解液,通过两电极电化学沉积方法制备了Cu2O薄膜。讨论了pH值和沉积电位对Cu2O薄膜的影响,利用X射线衍射仪(XRD)、场发射扫描电子显微镜(SEM)、X射线光电子能谱(XPS)对薄膜进行表征。结果表明,两电极电化学沉积法制备Cu2O薄膜最佳的pH值为5.7～5.9,沉积电位为1.1～1.3V。此外,分析了沉积电位对Cu2O薄膜形貌的影响。     

铜掺杂纳米 TiO2 的制备及其抗菌性能研究

目的制备铜掺杂纳米二氧化钛抗菌材料,测定其金属溶出率,研究该材料的光催化活性及抗菌性能。方法通过水热合成法制备掺铜二氧化钛(TiO_2Cu)纳米材料,采用催化动力学法测定该材料Cu~(~(2+))溶出率,以亚甲蓝为光催化降解材料测定其光催化活性,以金黄色葡萄球菌为目标物,研究在紫外光和非光条件下TiO_2Cu纳米材料的抗菌性能。结果 TiO_2Cu纳米材料Cu~(2+)溶出率最大值为72.36%,在自然光和紫外灯光照下对亚甲蓝光催化降解率分别为95.06%和85.08%,光照下TiO_2Cu材料质量浓度达到10 mg/m L,与细菌共培养90 min后,抑菌率可达94%。结论采用冷冻干燥法制备的含铜量为0.2%的TiO_2Cu材料具有良好的光催化活性,在暗光和紫外光照下均具有一定的抗菌性能。     

周期性前驱体的预硫化处理对Cu2ZnSnS4薄膜的影响EI北大核心CSCD

Cu2ZnSnS4薄膜具有组成元素来源丰富、吸收系数高等优点,是理想的薄膜太阳能电池吸收层材料。采用磁控溅射法沉积周期性金属叠层前驱体,再进行两步硫化处理制备出Cu2ZnSnS4薄膜,分析第一步硫化(即预硫化)对Cu2ZnSnS4薄膜特性的影响。结果表明,预硫化处理可促进前驱体的硫化反应。经过预硫化处理的Cu2ZnSnS4薄膜的结晶度优于未进行预硫化处理的Cu2ZnSnS4薄膜。当预硫化温度为350℃时,增加预硫化时间有利于硫化反应的进行,并抑制Sn元素损失,但过长的预硫化时间导致Cu2ZnSnS4薄膜中易出现二次相,影响薄膜的特性。预硫化温度350℃、预硫化时间10 min的Cu2ZnSnS4薄膜结晶度最优,薄膜组分具有贫Cu、富Zn特性,且薄膜表面无孔隙。     

Dissolution of Cu nanoparticles and antibacterial behaviors of TaN-Cu nanocomposite thin films

Previous study shows that TaN-Cu nanocomposite thin films can have both anti-wear and antibacterial properties. Both properties are dependent on the size and density of the surfaced Cu particles. The present study made an attempt to correlate the annealing conditions to the dissolving rate of Cu particles surfaced on TaN, which eventually decides the films' antibacterial performance. Cu powders with different particle sizes were first used to study the size effect on the Cu powders' dissolving behavior. The results were then used to understand the antibacterial performance of TaN-Cu nanocomposite thin films prepared under various conditions. It is found that the films with nano-sized Cu particles could respond faster in terms of antibacterial performance. When in contact with the TaN film, these Cu particles can have an even higher dissolving rate caused by galvanic effect. This implies that the annealed TaN-Cu nanocomposite thin films may have a different antibacterial function due to the difference in the particle size and density of surfaced Cu. Overall, the results imply that both short and long term antibacterial functions of these films can be controlled, provided that the emerged particle size and density of Cu are controlled.     

Photoelectrochemical solar cell studies on electroplated cuprous oxide thin films

Cuprous oxide (Cu₂O) is an interesting p-type semiconductor with a band gap of 2 eV suitable for solar cell applications. Deposition of Cu₂O thin films by electrodeposition from aqueous solutions is a low temperature and inexpensive technique. in the present work, Cu₂O thin films were cathodically deposited on Cu and tin oxide coated glass substrates by the cathodic reduction of copper (II) lactate solution. The optimized deposition conditions to synthesize cuprous oxide thin films were experimentally identified as; Deposition potential: −0.555 V versus SCE, pH: 9.0 ± 0.1, Bath temperature: 70^∘C. X-ray diffraction studies revealed the formation of single phase cubic Cu₂O films. The effect of annealing on the structure and morphology of Cu₂O thin films are studied. The dielectric susceptibility, optical conductivity and packing density are evaluated. Photoelectrochemical solar cells based on p-Cu₂O films are constructed. Spectral response studies indicate a peak in photo current density around 600 nm corresponding to the band gap of Cu₂O thin films. The effects of annealing, chemical etching and photo etching on the solar cell parameters are studied.     

Structural and optical properties of Cu doped ZnO thin films by co-sputtering

This paper reports on the structural and optical properties of ZnCuO thin films that were prepared by co-sputtering for the application of p-type-channel transparent thin-film transistors (TFTs). Pure ceramic ZnO and metal Cu targets were prepared for the co-sputtering of the ZnCuO thin films. The effects of the Cu concentration on the structural, optical, and electrical properties of the ZnCuO films were investigated after their heat treatment. It was observed from the XRD measurements that the ZnCuO films with a Cu concentration of 7% had ZnO(002), Cu2O(111), and Cu2O(200) planes. The 7% Cu-doped ZnO films also showed a band-gap energy of approximately 2.05 eV, an average transmittance of approximately 62%, and a p-type carrier density of approximately 1.33 x 10(19) cm-3 at room temperature. The bottom-gated TFTs that were fabricated with the ZnCuO thin film as a p-type channel exhibited an on-off ratio of approximately 6. These results indicate the possibility of applying ZnCuO thin films with variable band-gap energies to ZnO-based optoelectronic devices.     

Photoinduced superhydrophilicity of TiO2 thin film with hierarchical Cu doping

Abstract

Hydrophilic Cu–TiO₂ thin films with a gradient in the Cu concentration were prepared on glass by layer-by-layer dip-coating from TiO₂ precursors. The effects of the Cu doping on the structure and properties of TiO₂ self-cleaning thin films are discussed. The Cu gradient markedly affects the hydrophilicity of the films, with the water contact angle significantly reduced compared with those of the pure or uniformly doped TiO₂ thin films. This enhanced hydrophilicity is explained by the more efficient absorption of the solar light and by the reduced recombination of photoexcited electrons and holes in the TiO₂ films containing a gradient of Cu dopants.     

Annealing temperature and ultraviolet irradiation effect on the ferroelectric properties of Bi(3.25)La(0.75)Ti3O12 thin films

Bi(3.25)La(0.75)Ti3O12 thin films were prepared on Pt/Ti/SiO2/Si substrates by the metal organic decomposition method. The structural characterizations and the surface morphology observations were carried out applying X-ray diffraction and atomic force microscope, respectively. The annealing temperature and the ultraviolet irradiation effect on the ferroelectric properties were studied. It was found that the remnant polarization (Pr) and the coercive field (Ec) increased with the increase of the applied electric field (E) for all films. With the annealing temperature increasing from 670 degrees C to 750 degrees C, the increase tendency of Pr(E) and Ec (E) got enhanced from 670 degrees C to 720 degrees C, followed by weakened from 720 degrees C at 750 degrees C. These phenomena could be well explained by the different internal strain in films. The remnant polarization and the coercive field showed an obvious decrease when the top electrodes of the thin films were illuminated with UV light due to the screening effect of trapped charge carries.     

Cu2O薄膜的制备方法

氧化亚铜（Cu2O）薄膜在太阳能电池及其它光电器件上有重要应用,它具有无毒、制备成本低、材料广泛易得等优点。制备Cu2O薄膜的方法主要有热蒸发、溅射、化学气相沉积和电化学沉积等,本文对Cu2O薄膜的制备方法进行了综述与展望。     

CuO/SiO2复合薄膜的微观结构和发光特性分析

采用射频磁控共溅射法在硅衬底上沉积Cu/SiO₂ 复合薄膜,然后在N₂保护下高温退火,再于空气中自然冷却氧化,制备出低维CuO纳米结构,并对其微观结构和光致发光进行研究. 退火温度为1100℃时样品中主晶相为立方晶系的CuO（200）晶面,薄膜样品表面出现纳米线状结构,表面组分主要包括Cu、O元素,冷却氧化形成CuO/SiO₂复合薄膜. 该温度下退火后,光致发光谱中出现紫外光和紫光,这是由于复合薄膜中CuO的导带底到Cu空穴缺陷能级的跃迁导致的.     

N掺杂Cu2O薄膜的低温沉积及快速热退火研究

采用氧化亚铜(Cu_2O)陶瓷靶,利用射频磁控溅射沉积法在氮气和氩气的混合气氛下制备了N掺杂Cu_2O(Cu_2O∶N)薄膜,并在N_2气氛下对薄膜进行了快速热退火处理,研究了N_2流量和退火温度对Cu_2O∶N薄膜的生长行为、物相结构、表面形貌及光电性能的影响。结果显示,在衬底温度300℃、N_2流量12sccm条件下生长的薄膜为纯相Cu_2O薄膜;在N_2气氛下对预沉积薄膜进行快速热退火处理不影响薄膜的物相结构,薄膜的结晶质量随退火温度(450℃)的升高而显著改善;快速热退火处理能改善薄膜的结晶质量和缺陷,降低光生载流子的散射,增强载流子的传输,预沉积Cu_2O∶N薄膜经400℃退火处理后展示出较好的电性能,薄膜的霍尔迁移率(μ)为27.8cm~2·V~(-1)·s~(-1)、电阻率(ρ)为2.47×10~3Ω·cm。研究表明低温溅射沉积和快速热退火处理能有效改善Cu_2O∶N薄膜的光电性能。