Visible cathodoluminescence of Er ions in β-Ga(2)O(3) nanowires and microwires

Erbium doped β-Ga(2)O(3) nanowires and microwires have been obtained by a vapour-solid process from an initial mixture of Ga(2)O(3) and Er(2)O(3) powders. X-ray diffraction (XRD) analysis reveals the presence of erbium gallium garnet as well as β-Ga(2)O(3) phases in the microwires. Scanning electron microscopy (SEM) images show that the larger microwires have a nearly rectangular cross-section. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) analysis show good crystal quality of the β-Ga(2)O(3) nanowires. The nanostructures have been studied by means of the cathodoluminescence technique in the scanning electron microscope. Er intraionic blue, green and red emission lines are observed in luminescence spectra even at room temperature, which confirms the optical activity of the rare earth ions in?the grown structures. Mapping of the main 555?nm emission intensity shows a non-homogeneous distribution of Er ions in the microstructures.     

Microhardness and Crack Resistance of Gallium Oxide

Technical Physics Letters - The microhardness and crack resistance of two main gallium oxide polytypes: metastable α-Ga2O3 with a corundum structure and β-Ga2O3 (high-temperature phase)...     

Cathodoluminescence of rare earth implanted Ga2O3 and GeO2 nanostructures

Rare earth (RE) doped gallium oxide and germanium oxide micro- and nanostructures, mostly nanowires, have been obtained and their morphological and optical properties have been characterized. Undoped oxide micro- and nanostructures were grown by a thermal evaporation method and were subsequently doped with gadolinium or europium ions by ion implantation. No significant changes in the morphologies of the nanostructures were observed after ion implantation and thermal annealing. The luminescence emission properties have been studied with cathodoluminescence (CL) in a scanning electron microscope (SEM). Both β-Ga(2)O(3) and GeO(2) structures implanted with Eu show the characteristic red luminescence peak centered at around 610 nm, due to the (5)D(0)-(7)F(2) Eu(3+) intraionic transition. Sharpening of the luminescence peaks after thermal annealing is observed in Eu implanted β-Ga(2)O(3), which is assigned to the lattice recovery. Gd(3+) as-implanted samples do not show rare earth related luminescence. After annealing, optical activation of Gd(3+) is obtained in both matrices and a sharp ultraviolet peak centered at around 315 nm, associated with the Gd(3+) (6)P(7/2)-(8)S(7/2) intraionic transition, is observed. The influence of the Gd ion implantation and the annealing temperature on the gallium oxide broad intrinsic defect band has been analyzed.     

Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD

Journal of Materials Science - Sn-doped gallium oxide (Ga2O3:Sn) films were deposited on β-Ga2O3 (100) substrates by metal organic chemical vapor deposition method. The Sn concentration was...     

Thermal Growth and Nanomagnetism of the Quasi-one Dimensional Iron Oxide

Quasi-one dimensional iron oxide nanowires with flat needle shape were synthesized on the iron powders by a rather simple catalyst-free thermal oxidation process in ambient atmosphere. The characterization by field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman and high-resolution transmission electron microscopy (HRTEM) revealed that these nanostructures are single crystalline α-Fe2O3. The various dimensions with 40-170 nm in width and 1-8 μm in length were obtained by tuning the growth temperature from 280 to 480℃. A surface diffusion mechanism was proposed to account for the growth of quasi-one dimensional nanostructure. The typical α-Fe2O3 nanowires synthesized at 430℃ had a reduced Morin temperature TM of 131 K in comparison with their bulk counterpart. The coercivitis Hc of these nanowires are 321 and 65 Oe at 5 and 300 K, respectively. The temperature of synthesis also has important effects on the magnetic properties of these nanowires.     

The growth of ultralong and highly blue luminescent gallium oxide nanowires and nanobelts, and direct horizontal nanowire growth on substrates

We report the growth of ultralong β-Ga(2)O(3) nanowires and nanobelts on silicon substrates using a vapor phase transport method. The growth was carried out in a tube furnace, with gallium metal serving as the gallium source. The nanowires and nanobelts can grow to lengths of hundreds of nanometers and even millimeters. Their full lengths have been captured by both scanning electron microscope (SEM) and optical images. X-ray diffraction (XRD) patterns and transmission electron microscope (TEM) images have been used to study the crystal structures of these nanowires and nanobelts. Strong blue emission from these ultralong nanostructures can be readily observed by irradiation with an ultraviolet (UV) lamp. Diffuse reflectance spectroscopy measurements gave a band gap of 4.56?eV for these nanostructures. The blue emission shows a band maximum at 470?nm. Interestingly, by annealing the silicon substrates in an oxygen atmosphere to form a thick SiO(2) film, and growing Ga(2)O(3) nanowires over the sputtered gold patterned regions, horizontal Ga(2)O(3) nanowire growth in the non-gold-coated regions can be observed. These horizontal nanowires can grow to as long as over 10?μm in length. Their composition has been confirmed by TEM characterization. This represents one of the first examples of direct horizontal growth of oxide nanowires on substrates.     

溶胶凝胶模板法制备In2O3纳米线及其气敏性能

以InCl3·4H2O和乙二胺为原料,采用溶胶凝胶模板法合成了立方晶系的In2O3纳米线,利用X射线衍射仪、扫描电镜、透射电镜对材料的组成、形貌、晶粒的大小、直径进行了表征,结果表明,产物是直径为80-100nm,晶粒直径为4-10 nm的纳米线。用产物In2O3纳米线制备气敏元件,气敏测试结果显示,合成的In2O3纳米线对NO2具有很高的灵敏度,器件的最佳工作温度为360 ℃。     

使用Cu助剂在常压及Cu-Ti共晶温度下快速制备TiO2纳米线

本文提供了一种简单的热退火方法以制备线状TiO2纳米结构。热退火方法一直难以用于高熔点金属氧化物纳米结构的制备,而本文通过引入CuCl2作为催化剂,通过简单的反应过程,在较短的时间内和远低于钛熔点的反应温度下制得了金红石相的TiO2一维纳米结构。研究结果表明,关键的实验参数包括活性催化物添加量、生长温度和退火时间。在850℃(接近于Cu-Ti共晶温度)退火60分钟的反应条件下,制备的二氧化钛纳米线长度在10微米以上,直径约为100纳米。此外,本文还探讨了TiO2纳米线生长机理。     

氧化锡纳米线的制备及其乙醇气体敏感性能

采用热蒸发法成功制备氧化锡纳米线。用X射线衍射、扫描电子显微镜和透射电子显微镜对所制备纳米线的晶格结构和表面形貌进行表征。所制材料为金红石氧化锡单晶结构,纳米线直径为50~200nm,长度为5~15μm,符合气-液-固生长机制。以氧化锡为气敏材料,制备了旁热式结构气敏元件,测试该元件对浓度范围为25×10^-6 ~500×10^-6 的乙醇气体环境的敏感性能。结果表明,该元件的最佳工作温度约为260℃;在25×10^-6 和500×10^-6 的乙醇气体中,灵敏度分别为7.54和111.01,响应时间为2~20s,恢复时间为5~33s;在测试范围内灵敏度与气体浓度具有良好的线性关系;7天内重复测量误差在5%以内,稳定性较好。     

反应源温度对ZnO纳米线阵列定向性及发光性能的影响

以Au薄膜为催化剂、ZnO与碳混合粉末为反应源,采用碳热还原法在单晶Si衬底上制备了ZnO纳米线阵列.通过扫描电子显微镜( SEM)、X射线衍射仪(XRD)、荧光分光光度计对样品的表征,研究了反应源温度对ZnO纳米线阵列的定向性和光致发光性能的影响.样品在源温度920℃条件下沿(002)方向择优生长,定向性最好,温度过低不利于ZnO纳米线阵列密集生长,而温度过高导致Zn原子二次蒸发,因而也不利于纳米线阵列的定向和择优生长;样品在源温度880℃有最强的近紫外带边发射,表明温度过高和过低都不利于ZnO晶体结构的优化;由于ZnO纳米线在缺氧氛围下生长,氧空位是缺陷存在的主要形式,因此所有样品都有较强的绿光发射.温度升高导致纳米线生长速度提高而增加了氧空位缺陷数量,从而使样品绿峰强度增强并在源温度920℃时达最大值,但温度的进一步升高可导致ZnO纳米线表面Zn元素的蒸发而降低氧空位缺陷的数量,从而抑制绿峰强度.     

Synthesis of long indium nitride nanowires with uniform diameters in large quantities

Large quantities of indium nitride (InN) nanowires are synthesized by the in situ nitriding of indium oxide (In(2)O(3)) powders in an ammonia (NH(3)) flux. Tens of milligrams of nanowires are obtained in one batch. Every 100 mg of In(2)O(3) starting powder can produce up to 65 mg of InN nanowires under the optimized conditions. The synthesized nanowires grow along the [001] direction with excellent crystallinity. They are of high purity and are 30-50 microm in length with an almost uniform diameter of about 100 nm. Photoluminescence measurements of the nanowires exhibit a strong peak at 707 nm. An optical bandgap of about 1.7 eV is estimated based on the absorption spectrum. The experimental results also demonstrate that the approach of nitriding In(2)O(3) powders in situ is feasible for the synthesis of high-purity InN nanowires in large quantities, with good reproducibility and without catalyst materials. The synthesis of InN nanowires in large quantities would be of benefit to the further study and understanding of their intrinsic properties, as well as being advantageous for their potential application in nanodevices.     

硅衬底上有序氮化铝纳米线阵列的生长

在450℃反应温度下,利用无水三氯化铝与叠氮化钠在25mL的不锈钢反应釜中直接反应,成功地在硅片衬底上制备了六方单晶氮化铝（h—AlN）纳米线有序阵列。这些纳米线呈长直线状,粗细均匀,直径约为100nm,长度均在几个微米以上。所有纳米线生长方向一致,而且与硅片衬底垂直。经过分析,纳米线由气液固机制生长而成.     

氧化锌纳米线/管阵列的溶胶-凝胶模板法制备与表征

用溶胶-凝胶法在氧化铝模板中制备了直径约为15、30、50、60nm的有序氧化锌纳米线/管阵列.用扫描电镜(SEM)、透射电镜(TEM)和X射线衍射仪(XRD)对氧化锌纳米线/管的形貌、结构以及相组成进行了分析.结果发现,纳米线的形貌依赖于氧化铝模板中孔洞的形貌,纳米线的长度受控于氧化铝模板的厚度,外径与氧化铝模板的孔径相等.通过控制溶胶的浓度以及氧化铝模板在溶胶中的浸泡时间可以制备出纳米管.     

阳极氧化铝样模法制备纳米线阵列的发展概况

对金属纳米线的研究和发展进行了回顾和展望:在多孔阳极氧化铝模板上可制备出不同直径和长度的纳米管或纳米线阵列;所制备的纳米线有着光、电、磁、催化等特性,具有广泛的用途及发展前景.     

Transition metal oxide nanowires synthesized by heating metal substrates

Here we reported a simple method to synthesize transition metal oxide nanowires. Copper oxide (CuO), zinc oxide (ZnO), and cobalt oxide (Co₃O₄) nanowires were synthesized by heating the copper, zinc, and cobalt substrates under atmosphere condition. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to analyze the morphology and microstructure of the nanowires. According to our experimental results, self-catalysis growth mechanism was proposed to explain the growth of the nanowires. The temperature window for the growth of nanowires was estimated by taking into account the Gibbs free energy of reaction. The synthesis approach observed in our experiment could be applied to synthesize other one-dimensional structures, such as FeSe and Bi₂Te₃ nanowires.     

Application of NiCo2O4 as a catalyst in the conversion of p-nitrophenol to p-aminophenol

Transition metal containing spinel structure type oxides exhibit characteristic structural, electrical, magnetic and catalytic properties. Present work investigated a novel application of nickel and cobalt containing spinel oxide (NiCo₂O₄) in the conversion of p-nitrophenol to p-aminophenol. The oxide compound was synthesized by citrate gel method and characterized by powder X-ray diffraction method and scanning electron microscopy. The conversion process involved room temperature hydrogenation of p-nitrophenol by aqueous sodium borohydride. Powder nickel cobalt oxide was used as a catalyst. The reduction of p-nitrophenol has been monitored by UV-VIS and IR spectroscopic analysis. Complete conversion of the nitro compound to amino compound was achieved within a minute.     

双金属催化剂Ni-Co/SiO2空心球的可控制备及催化性能

以二氧化硅为模板, 采用牺牲模板/界面反应法制备具有介孔结构的碱式硅酸镍钴空心球。采用透射电子显微镜(TEM)、X 射线衍射(XRD)、氮气吸脱附曲线(BET)和程序升温还原(TPR)等方法, 对样品的结构和形貌进行了表征, 探索了碱式硅酸镍钴空心球还原规律, 并研究了双金属催化剂Ni-Co/SiO₂的催化性能。研究发现, 140℃下反应6 h, 产物为核壳结构, 反应12 h时变为空心球结构; 在氢气气氛中800℃下反应5 h, 碱式硅酸镍钴被完全还原为Ni-Co/SiO₂, 还原前后形貌基本不变, 但比表面积有所减小, 孔径增大。Ni-Co/SiO₂空心球用于催化硝基苯加氢反应1 h后, 硝基苯的转化率为67%, 比商用Raney Ni 提高约28%。     

钛酸钠纳米线制备TiO_2纳米线的反应条件

结合离子交换-高温烧结法,由钛酸钠纳米线制备了TiO_2纳米线。通过XRD、Uv-vis漫反射和SEM等测试手段,探讨离子交换时间和高温烧结温度对制备TiO_2纳米线的影响,并以甲基橙为目标污染物测试其光催化性能。结果表明:离子交换时间越长越有利于钛酸纳米线的形成,离子交换48h时钛酸钠纳米线基本转换成为钛酸纳米线;过低的烧结温度不利于TiO_2纳米线的形成,烧结温度650℃时钛酸纳米线基本分解成为TiO_2纳米线;钛酸钠纳米线几乎没有光催化性能,而TiO_2纳米线具有很强的光催化性能。     

A mobile Sn nanowire inside a β-Ga2 O3 tube: a practical nanoscale electrically/thermally driven switch

Nanoelectromechanical system switches are seen as key devices for fast switching in communication networks since they can be switched between transmitting and receiving states with an electrostatic command. Herein, the fabrication of practical, nanoscale electrically/thermally driven switches is reported based on a mobile Sn nanowire inside a β-Ga2 O3 tube. The melting point of Sn inside the Ga2 O3 tube is found to be as low as 58 °C-far below the value of bulk Sn (231.89 °C)-and its crystal phase (β-Sn) remains unchanged even at temperatures as low as -170 °C. Thus a miniaturization of the unique wide-temperature-range thermometer based on the linear thermal expansion of liquid Sn fillings in the Ga2 O3 tube is realized. In addition, the electrical properties of the Sn-nanowire-filled β-Ga2 O3 tubes are carefully determined: importantly, the resistance demonstrates a sudden drop (rise) when two Sn nanowires contact (separate), due to the thermally driven motion of the liquid Sn fillings inside the tube. Thus this structure can be switched between its on and off states by controlling the motion, merging or splitting, of the Sn nanowires inside the tube, either electrically, by applying a current, or thermally, at a predetermined temperature.     

Volume Gallium Oxide Crystals Grown from Melt by the Czochralski Method in an Oxygen-Containing Atmosphere

Technical Physics Letters - Results of successful experiments on the growth of gallium oxide (β-Ga2O3) crystals by the Czochralski method are reported. The influence of growth atmosphere on...