电沉积Ni—P非晶态合金的初期结构及形成机理

在典型的用于电沉积Ｎｉ—Ｐ非晶态合金的溶液中，于非晶碳膜上恒电位［－９００ｍＶ（ＳＣＥ）］电沉积１ｓ后，发现有Ｎｉ的晶核形成，在相邻很近的Ｎｉ晶核之间沉积出Ｎｉ－Ｐ—Ｓ非晶核及不连续非晶镀层．证明电沉积Ｎｉ－Ｐ合金初期晶态Ｎｉ的形成并非基体外延所致．     

电沉积Ni—P,Ni—P—Si3N4非晶态合金及其结构,性能研究

研究了Ｎｉ－Ｐ、Ｎｉ－Ｐ－Ｓｉ３Ｎ４非晶态合金薄膜的是沉积工艺，通过ＳＥＭ－ＥＤＳ，ＸＲＤ，ＥＭＰＡ等微观分析方法，提出了获取８￣１４ｗｔ％Ｎｉ－Ｐ和Ｎｉ－Ｐ－Ｓｉ３Ｎ非晶合金镀层的镀液组成和电沉积参数。实验表明，Ｎｉ－Ｐ非晶态合金镀层在碱液中具有优越的耐蚀性能，在含Ｃｌ＾－１的中性盐液中有良好的耐蚀性，且不产生点蚀；Ｎｉ－Ｐ－Ｓｉ３Ｎ４非晶合金镀层，经晶化处理后，耐蚀性能提高，且与基材呈冶金结合     

P—Si上电沉积非晶Ni—W—P薄膜的耐蚀性研究

对Ｐ－Ｓｉ上电沉积Ｎｉ－Ｗ－Ｐ合金薄膜在３％ＮａＣｌ、０．５ｍｏｌ·ｄｍ＾－３Ｈ２ＳＯ４、１ｍｏｌ·ｄｍ＾－３ＨＣｌ介质中的阳极溶解行为进行了研究,ＸＰＳ分析了钝化膜中各元素的化学价态和存在形式。结果表明,非晶Ｎｉ－Ｗ－Ｐ合金薄膜的耐蚀性远优于晶态Ｎｉ－Ｗ－Ｐ薄膜和非晶Ｎｉ－Ｐ薄膜;高Ｗ含量的非晶Ｎｉ－Ｗ－Ｐ合金薄膜,有较强的耐蚀能力;在ＮａＣｌ介质中非晶Ｎｉ－Ｗ－Ｐ合金形成了由Ｎｉ２Ｏ３、ＮｉＨ     

电沉积Fe—Ni—P合金的磁性研究

通过对电沉积Ｆｅ－Ｎｉ－Ｐ合金磁性的测定，获得了合金成分以及电沉积工艺对其技术磁性的影响规律。研究结果表明，合金中Ｐ，Ｆｅ含量，电沉积镀液ｐＨ值和电流密度对Ｆｅ－Ｎｉ－Ｐ非晶合金的技术磁性均有很大影响。     

镍－钨－磷非晶态合金的电沉积方法及耐蚀性能的研究

研究了Ｎｉ－Ｗ－Ｐ非晶态合金的电沉积方法，讨论了电解液组成、温度及ｐＨ值对镀层结构的影响。由Ｘ射线衍射实验测定了镀层结构和晶粒尺寸，分析了非晶态镀层的形成规律。用极化曲线分析并比较了电沉积Ｎｉ－Ｐ、Ｎｉ－Ｗ及Ｎｉ－Ｗ－Ｐ非晶态合金镀层的腐蚀行为。     

电沉积非晶Ni—P合金的层状结构

用电沉积法获得的非晶Ｎｉ－Ｐ合金断面经抛光、浸蚀后，金相组织为平行于基体表面、黑亮相间的层状结构。它的形成原因是，在镍磷合金电沉积过程中，由于阴极附近溶液ｐＨ值发生变化而引起磷含量随厚度突变。     

电沉积非晶Ni－P合金的层状结构

用电沉积法获得的非晶Ｎｉ－Ｐ合金断面经抛光、浸蚀后，金相组织为平行于基体表面、黑亮相间的层状结构。它的形成原因是，在镍磷合金电沉积过程中，由于阴极附近溶液ｐＨ值发生变化而引起磷含量随厚度突变。     

镍—钨—磷非晶态合金的电沉积方法及耐蚀性能的研究

研究了Ｎｉ－Ｗ－Ｐ非晶态合金的电沉积方法，讨论了电解液组成、温度及ｐＨ值对镀层结构的影响。由Ｘ射线衍射实验测定了镀层结构和晶粒尺寸，分析了非晶态层的形成规律。及极化曲线分析并比较了电沉积Ｎｉ－Ｐ，Ｎｉ－Ｗ及Ｎｉ－Ｗ－Ｐ非晶态合金镀的腐蚀行为。     

电沉积Ni-W-P合金上析氢行为的研究

在１ｍｏｌ／Ｌ的ＫＯＨ水溶液中,以电沉积法制备的Ｎｉ－Ｃｏ－Ｐ、Ｎｉ－Ｗ－Ｐ合金为阴极,测量析氢时的极化曲线,结果表明,与Ｎｉ电极相比,Ｎｉ－Ｗ－Ｐ合金电极上氢析出的电势正移２００次毫伏,即Ｎｉ－Ｗ－Ｐ合金电极具有较高的析氢电催化活性。通过ＳＥＭ和ＸＰＳ分析探讨了Ｎｉ电极中引入Ｗ和Ｐ元素对析氢催化活性的影响。     

非晶态Fe-Ni合金电沉积研究

介绍了一种新的电沉积非晶态Ｆｅ－Ｎｉ合金的方法。用这种方法在室温下电沉积出的Ｆｅ－Ｎｉ合金镀层外观接近镜面。经Ｘ－射线衍射及等离子光谱分析（ＩＣＰ－ＡＥＳ）证实，所获得的Ｆｅ－Ｎｉ合金镀层为非晶态结构，镀层中Ｆｅ和Ｎｉ含量分别为７３％～７７％和２０％～２４％，同时含有１．５％～５．０％的Ｐ和少量的Ｃｒ和Ｂ。对电沉积的工艺条件、光亮剂ＨＡＢ１、ＨＡＢ２和添加剂ＨＡＴ的影响进行了探讨。     

Preparation and characterization of Ni-C composite films

Ni-C composite films were prepared using a codeposition method, their structure and electrical properties were investigated. Depending on experimental conditions, two typical structures are found for as-deposited Ni-C films: i) amorphous Ni-C alloy film; ii) granular film with Ni₃C granules and inter-granule amorphous carbon. The amorphous Ni-C films show ohmic conduction behaviour with very high resistivity. On the other hand, granular films with high carbon content show semiconductive characteristics. The electrical property and conduction behaviour are correlated with the film structure. Besides, the crystallization behaviour of the amorphous Ni-C film was also studied.     

Effect of underlying silicon film on the evolution of microstructure and hardness of the high-temperature annealed carbon film on Si substrate

Effects of an amorphous silicon underlayer on the evolution of microstructure and hardness of an amorphous carbon film annealed at 900 °C for 0.5-1.5 h were investigated. The two-layer carbon/silicon film after annealing resulted in higher sp²/sp³ bonding ratio but lower hardness reduction compared to the single carbon film at the same total film thickness. The improved hardness reduction of the high-temperature annealed carbon film is attributed to the formation of polycrystals of the amorphous silicon together with the residual compressive stress of the two-layer C/Si films.     

In-vitro cellular behavior on amorphous carbon containing silicon

Amorphous carbon has been studied for its biological properties. Doping can alter the film structure to achieve certain desirable properties, like lowering of stress. The incorporation of a secondary element however also alters the film surface properties, which in turn, the biological response. We have investigated the response of fibroblast and osteoblast-like cells on amorphous carbon and amorphous carbon containing silicon. The amorphous carbon with the highest silicon concentration exhibits higher surface energy, with higher polar component. Both cell types adhered, spread and proliferated well on all films, especially on the one with the highest silicon content.     

Nanosecond UV laser graphitization and delamination of thin tetrahedral amorphous carbon films with different sp/sp content

We have produced hydrogen-free tetrahedral amorphous carbon films with different densities and Young's modulus by coating silicon with a filtered vacuum arc under different angles. The films were modified with a pulsed laser (wavelength 355 nm) into sp² rich amorphous carbon and nano crystalline carbon films. The graphitization threshold of the films depends on the film thickness as well as on the carbon density. Simulations of the optical absorption of the different carbon films permitted to confirm the experimental results. On the other side, the delamination threshold of carbon films increases with the film thickness and was found to be controlled by thermal properties of the film. The thin film graphitization and delamination is investigated by optical microscopy, atomic force microscopy, scanning electron microscopy and Raman spectroscopy.     

氧气对MWPCVD制备金刚石膜的影响

在水冷反应室式微波等离子体化学气相沉积装置中以混合的CH4/H2/O2为反应气体,研究了O2浓度对制备金刚石膜的影响.实验发现,很低浓度的O2会显著促进金刚石的沉积,并稍稍抑制非晶C的沉积,因而沉积膜中非晶C的含量急剧下降;较高浓度的O2会同时抑制金刚石和非晶C的沉积,但由于抑制金刚石的作用更强烈,沉积膜中非晶C的含量反而有所升高.另外,O2的存在,有利于沉积颗粒较小的金刚石膜.     

XPS study of the a-C:H/Ti and a-C:H/a-Si interfaces

In this study ultrathin hydrogenated amorphous carbon (a-C:H) films have been grown onto the titanium and amorphous silicon (a-Si) overlayers by direct ion beam deposition using acetylene gas as a hydrocarbon source. X-ray photoelectron spectroscopy (XPS) was used for study of the DLC-Ti and DLC-Si interfaces. It was revealed that a-Si is a good interlayer for improvement of adhesion in the case of diamond-like carbon film deposition onto the steel substrate at room temperature. a-C:H film growth without substantial intermixing occurred on the a-Si. On the other hand, adhesion between the Ti interlayer and the diamond like carbon film was very sensitive to the deposition conditions (presence of the pump oil) as well as structure and stress level of the Ti film. It was explained by strong intermixing between the growing carbon film and Ti. Bad adhesion between the growing DLC film and Ti interlayer was observed despite formation of the TiC. At the same time, formation of the TiO_x was not an obstacle for good adhesion. It is shown that composition of the used hydrocarbon gas, structure of the Ti thin film and mechanical stress in it had greater influence on adhesion with a-C:H film than elemental composition of the Ti interlayer surface.     

使用梯度过渡层的掺Cr碳膜的显微组织特征

为了探究C、Cr两种主要成膜元素在非晶碳膜中的存在和分布状态,采用非平衡磁控溅射离子镀技术制备出了具有梯度过渡层的掺Cr碳膜,利用高分辨透射电子显微术(HRTEM)分析了薄膜的显微组织.结果表明,沉积在硅晶片上的纯Cr底层具有典型的柱状晶结构,其上的梯度过渡层则由各种形态的Cr纳米晶和富碳非晶基质构成.沿薄膜生长方向,随着Cr含量逐渐降低,过渡层中的Cr纳米晶依次形成层片晶、岛状晶和微晶.掺Cr碳膜的工作层则是一种非晶的纳米多层膜.膜中的C始终以非晶态存在,所观察到的结晶相均属金属Cr,同时纯Cr层柱状晶和过渡层中的各种Cr纳米晶都不同程度地具有(110)晶面的择优取向.     

Difference of deposition process of an amorphous carbon film due to source gases

We compared the deposition process of an amorphous carbon film using acetylene as a source gas with the deposition process using methane. The process was investigated by using infrared absorption spectroscopy in multiple internal reflection geometry (MIR-IRAS). The infrared spectra showed that sp³-hydrocarbon species was observed in both cases: on the other hand, the sp- and sp²-carbon and/or hydrocarbon species was clearly observed in the film deposited using acetylene. Moreover, we observed the changes in predominant adsorbed species with film thickness in both cases; these facts suggest that an amorphous carbon film grows with the structural changes of adsorbed species in both deposition processes.     

Effects of carbon readsorption on tungsten under high-flux, low-energy Ar ion irradiation at elevated temperature

The erosion kinetics under irradiation by Ar ions extracted from plasma by 300 V negative bias voltage of 2 μm-thick W film contaminated by redeposited carbon atoms was investigated in dependence on the Ar-working gas pressure in the range 0.2-10 Pa at 410 K. The erosion and deposition parameters were deduced from the dependence of the sample's weight change on irradiation time. Two regimes were distinguished which contributed differently to the carbon transport efficiency from the surface towards the bulk, namely, the weight-decrease regime, when sputtering prevailed redeposition, and the weight-increase regime, when redeposition prevailed sputtering. Carbon distribution profiles measured by the SIMS technique showed that carbon was efficiently transported into the W film when its surface was not covered by a continuous amorphous C layer. The C transport efficiency decreased when W was covered by a continuous amorphous C film.These results were qualitatively explained by dynamic mixing of atoms on the surface. It was assumed that surface chemical potential increased under irradiation and that C adatoms were driven into grain boundaries of nanocrystalline W film. The continuous amorphous C film on tungsten blocked the access of activated C atoms to the grain boundaries.