Divacancies at room temperature in germanium

We have studied the annealing of vacancy defects in neutron and proton irradiated germanium. After neutron irradiation the Sb-doped samples were annealed at 473, 673 and 773 K for 30 min. The positron lifetime was measured as a function of temperature (30 - 295 K). A lifetime component of 330 ps with no temperature dependence is observed in as irradiated samples, identified as the positron lifetime in a neutral divacancy. The average positron lifetime in the samples annealed at 473 K has a definite temperature dependence, suggesting that the divacancies become negative as the crystal recovers and the Fermi level moves upward in the band gap. Proton irradiation of germanium at 37 K with subsequent room temperature annealing also resulted in a similar lifetime component 315 ps, in good agreement with the neutron irradiation experiment.     

用于Cu互连的Ta/Ti-Al集成薄膜的结构和阻挡性能

应用射频磁控溅射法在(001)Si衬底上制备了Cu(120nm)/Ta(5nm)/Ti-Al(5nm)/Si异质结,借助原子力显微镜(AFM)、X射线衍射(XRD)和四探针测试仪(FPP)等方法研究了Ta(5nm)/Ti-Al(5nm)集成薄膜用作Cu和Si之间阻挡层的结构和性能。研究发现,Cu/Ta/Ti-Al/Si异质结即使经受850℃高温退火后,样品的XRD图中也没有出现杂峰,表明样品各层之间没有发生明显的化学反应。相对于800℃退火的样品,850℃退火样品的表面均方根粗糙度急剧增大,同时方块电阻也增加了一个数量级,表明Ta(5nm)/Ti-Al(5nm)集成薄膜在850℃时,阻挡性能完全失效。由于Ta和Cu之间存在良好粘附性以及Ti-Al强的化学稳定性,Ta(5nm)/Ti-Al(5nm)集成薄膜在800℃以下具有良好的阻挡性能。     

退火温度对CsI(Tl)薄膜微观结构和闪烁性能的影响

采用真空热蒸发法制备了CsI(Tl)薄膜, 然后进行了不同温度的真空热处理．用X射线衍射仪、扫描电子显微镜、X射线荧光光谱仪及正电子寿命谱仪对CsI(Tl)薄膜样品进行了分析, 并测得了样品的光产额．结果表明, 该CsI(Tl)薄膜沿(200)晶面择优取向生长．经过较低温度退火, CsI薄膜中的Tl⁺离子向薄膜表面扩散, 薄膜中缺陷数量增加, 且尺寸较大, 光产额略微增高．经过250℃退火, 薄膜中低温退火所形成缺陷得到恢复, 薄膜缺陷尺寸变小, 且数目减少, 具有较好的结晶状态, 光产额提高．经过400℃退火, 薄膜结构发生显著变化, 薄膜中缺陷大幅增加, 结晶状态变差, Ti+含量减少, 光产额急剧下降．     

反应射频磁控溅射法制备HfTaO薄膜的热稳定性和光学性能

采用反应射频磁控溅射技术制备HfTaO薄膜,利用X射线衍射(XRD)分析了薄膜的微结构,通过紫外-可见光分光光度计测量了薄膜的透过谱,计算了薄膜的折射率和禁带宽度,利用原子力显微镜观察了薄膜的表面形貌。结果表明,随着Ta掺入量(10%,26%,50%)的增加,HfTaO薄膜的结晶化温度分别为800、900、950℃,Ta掺入量继续增加到72%,经过950℃退火处理的HfTaO薄膜仍然保持非晶态,具有优良的热稳定性。AFM形貌分析显示非晶HfTaO薄膜表面非常平整。在550nm处薄膜折射率n随着Ta掺入量的增大而增大,n的变化区间为1.90～2.15。同时HfTaO薄膜的光学带隙Eg随着Ta掺入量的增大而逐渐减小,Eg的变化区间为4.15～5.29eV。     

Characterization of polymer films using a slow positron beam

Polymer structures have been investigated using positron annihilation lifetime spectroscopy (PALS) with a slow positron beam as well as a conventional radioactive source (²²Na). The properties of the free volume holes near the polymer surface were studied as a function of the positron implantation energy. The longest lifetime was associated with ortho-positronium (o-Ps) annihilation in the free volume holes. In polytetrafluoroethylene film, the lifetime of o-Ps was observed to decrease with increasing positron implantation depth, and a significant change in the o-Ps lifetime was found at a short distance (about 10 nm) from the surface, while its intensity increased. This result implies that near the polymer surface the free volume holes become larger that in the bulk. The effect of temperature on the polymer sub-surface layers was also studied. For high molecular weight polystyrene, the glass transition temperature for the sub-surface was lower than that for the bulk and thermal expansion coefficient of the sub-surface layers was found to be larger than the bulk value. Electronic Publication     

Wear-resisting Oxide Films for 900℃

A study was conducted to develop low-friction, wear-resistant surfaces on high temperature alloys for the temperature range from 26℃ to 900℃. The approach investigated consists of modifying the naturally occurring oxide film in order to improve its tribological properties. Improvement is needed at low temperatures where the oxide film, previously formed at high temperature, spalls due to stresses induced by sliding. Experiments with Ti, W and Ta additions show a beneficial effect when added to Ni and Ni-base alloys. Low friction can be maintained down to 100℃ from 900℃. For unalloyed Ni friction and surface damage increases at 400℃ to 500℃. Two new alloys were perpared based on the beneficial results of binary alloys and ZrO2 diffusion in Ni.Low friction at temperature above 500℃ and reasonable values (0.32~0.42) at low temperature are obtained.     

Positron lifetime calculations on vacancy clusters and dislocations in Ni and Fe

Positron lifetime calculations have been performed on vacancy clusters (stacking fault tetrahedra (SFT), vacancy loops), such clusters on dislocation line, interstitial clusters, such clusters on a dislocation line and dislocation line itself in order to investigate the so-called intermediate lifetimes observed in the experiments, namely, positron lifetimes between that at a matrix and that at a single vacancy. Before lifetime calculations, various defects were constructed in the model lattices and were relaxed completely to obtain the stable atomic structure by using N-body potentials. Then positron lifetime calculation was carried out for each defect. It was shown that positron lifetime for a SFT in Ni dependes on its size and becomes smaller with increasing the size. The positron wave function is mainly localized at the corner of a SFT, which gives rather lifetime, e.g., 130 ps for V₂₈, but when the cluster size is small, e.g., less than 10 vacancies, it gives a rather longer lifetime, e.g., 177 ps for V₆ because of the wave function localized at the inner space of a cluster. These behaviours are consistent with the experimental results. It was also found that the positron lifetime on a dislocation line and that at a jog are short (113 and 119 ps, respectively for Ni, 117 and 117 ps, respectively for Fe), close to the lifetime at matrix (110 ps for both Ni and Fe) and in these cases trapping potentials for a positron are shallow both for Ni and Fe.     

Tantalum capping on platinum thin heater for selective area heating

The thermal radiation which generated from the patterned Ta/Pt/Ta thin heater achieved a high temperature up to 1010 °C under applied current of 2.4 A. In order to reduce an electromigration at high current of 2 A, a Ta capping layer was placed on the Pt layer instead of conventional capping layer, such as SiNx and CoWP. Under the thermal radiation at the applied current of 2 A in the Ta/Pt/Ta thin heater, the Ta capping layer enhanced the lifetime of the Pt thin heater up to 5 h. A stamping process for the crystallization of a-Si was performed for 40 samples using the Ta/Pt/Ta thin heater. For all samples, a-Si has been selectively crystallized and Raman peaks were located near 519 cm^− 1. These results indicated that the thermal radiation of the Ta/Pt/Ta thin heater was maintained constantly due to the Ta capping.     

熔融盐电镀Ta的工艺优化及镀层性能分析

目前,通过电镀法获得Ta镀层的报道较少。采用正交试验对熔盐镀Ta的工艺参数进行优选,研究时间、温度、电流密度和表面粗糙度对镀层性能的影响,并对Ta镀层的表面形貌、镀层厚度、镀层退火前后物相、化学成分、硬度和结合强度进行分析。结果表明:电镀时间3 h,温度750℃,电流密度80 m A/cm2,试样表面粗糙度0.05μm时,所得镀层均匀连续,厚度约15μm;800℃下退火4 h可提高镀层结晶度,使亚稳相向α相转变;镀层与基体结合处存在疏松氧化结构,镀层结合强度为40 N左右。     

变温条件下HDPE/CB的正电子湮灭特性

对掺杂了25份（phr）导电炭黑（CB）的样品进行了正电子湮灭寿命谱的变温测量，在玻璃化转变温度以上，随着温度的增加，自由体积的大小线性增加，在玻璃化转变温度以下，自由体积的大小基本不变，o-Ps的强度在－40℃下基本不变，从－40℃以上开始增加，但在50℃以上上升有加快的趋势，与PTC材料的PTC现象和导电性能有一定的关联。     

真空热处理对NiCoCrAlTaY涂层／Ti62421S钛合金界面组织结构及元素扩散行为的影响

采用电弧离子镀（AII））技术在Ti62421s钛合金基体表面沉积NiCoCrAlTaY涂层。通过XRD、SEM与EDS能谱分析研究了不同真空热处理制度下NiCoCrAlTaY涂层／Ti62421s基体界面显微组织的变化和元素扩散行为。结果表明：沉积态的涂层主要由Cr2Ni3相、Al4Ni15Ta相和NiCoCr相组成。从750℃开始,NCoCrAlTaY涂层和钛合金基体有明显的界面反应,850℃真空热处理后界面出现明显的分层,析出Ni3（A1,Ti）、Ti（Ni,Co）和Ti2（Ni,Co）相;随着温度的升高,界面分层并加厚,同时出现kirkendall空位带,导致涂层退化。经950℃退火后涂层剥落,只有TiCr4相。650℃／3h、750℃／3h真空热处理过程中,涂层／基体界面发生Ni、Co、Ti元素互扩散,涂层中Ta和cr元素基本未向基体扩散。     

钛基上含钽涂层的热分解法制备

以金属钽层作为钛阳极的中间层可提高阳极的使用寿命,而热分解法制备涂层操作方便、工艺简单且成本低.考察了五氯化钽正丁醇溶液在氮气(≥99.99%)中的热分解过程,并以五氯化钽正丁醇溶液为先驱体,在氩气(≥99.99%)中采用涂覆烧结的热分解法在钛基体上制备了含钽涂层,考察了热分解温度、涂覆次数对涂层表面形貌、相结构和结合...     

Creep-damaged pipe steels probed with positron spectroscopy

Using positron lifetime spectroscopy (POLIS) the degree of damage in creep-influenced pipe steels was found to decrease with depth, as measured from the physical surface of the samples. Ultrasonic measurements were revealed to mostly note the differences in internal stresses, not in the microstructure. A critical limit of 160  ps average positron lifetime was determined at about 80% of material lifetime consumption in a creep experiment, independent of the material or the creep test parameters. The results suggest the technique of positron lifetime spectroscopy as a method for non-destructive monitoring of creep damage.     

Quasiparticle loss rates in Ta-based superconducting tunnel junctions

The quasiparticle (QP) lifetime in superconducting tunnel junctions (STJs) at sufficiently low temperature is usually found to be governed by loss processes associated with edges, interfaces or contacts. Such losses are closely related to fabrication issues and difficult to control. In our Ta-based STJs we observe variations in pulse decay time up to a factor of 2–3 for nominally the same devices. Nevertheless, experiments with STJs in which the thickness of the Al layers adjacent to the barrier is progressively increased, show a clear trend of increasing QP lifetime. Alternatively, introducing Nb capping layers below and on top of the Ta STJs gives a significant reduction of QP lifetime.     

Characterisation of vacancy-like defects in III–V compound semiconductors using positron annihilation technique

Single crystals of GaP and InSb were irradiated by 3 MeV electrons at 20 K to a total dose of 4 × 10¹⁸ e ⁻/cm². Isochronal annealing in the temperature region 77–650 K followed the irradiation. In GaP, the positron lifetime measurement indicated the presence of irradiation-induced vacancies in the Ga-sublattice. The vacancies disappeared at two stages observed in temperature ranges 200–300 and 450–550 K. In InSb the positron lifetime was found to increase by 8 ps compared to that in as-grown crystals (i.e. 282±2 ps) after irradiation. The increase indicated the presence of irradiation-induced defects; the crystal was found to recover until 350 K with a sharp annealing stage at 250–350 K.     

Positron Annihilation Study on the Microstructural Stability in Rapidly Solidified Al_(92.3)Fe_(4.3)V_(0.7)Si_(1.7)Mm_(1.0) Alloy

Rapidly solidified Al92.3Fe4.3V0.7Si1.7Mm1.0 alloy has been studied by positron lifetime spectroscopy and the variations on the intedecial defects with the annealing temperature were revealed by an analysis of the lifetime results. The intedece characteristics derived from the positron-lifetime results could be used to give a satisfactory interpretation of the dependence of mechanical properties on the annealing temperature     

双辉等离子涂层对机械曲轴耐磨耐蚀性能的影响

采用双辉等离子技术在机械曲轴表面制备了SiC/Ta复合涂层,研究了合成温度对复合涂层显微形貌、物相组成、耐磨和耐腐蚀性能的影响。结果表明,当合成温度从750上升至900℃时,复合涂层表面形貌由花纹状逐渐演变成细小颗粒团簇状,截面形貌中可见不同合成温度下复合涂层厚度和内部质量存在一定差异,不同合成温度的复合涂层中都出现了SiC、Ta、Ta₂C和TaC衍射峰。机械曲轴基体的摩擦系数都高于不同合成温度下的复合涂层,合成温度800℃时复合涂层的摩擦系数最小且最为稳定;随着合成温度升高,磨痕深度、磨痕宽度、磨损体积和比磨损率都呈现先减小后增大的特征,在合成温度为800℃时磨损体积和比磨损率最小;极化曲线和电化学阻抗谱测试结果保持一致,即复合涂层的耐蚀性能都优于基体,且合成温度为800℃时复合涂层的耐蚀性能最好;机械曲轴表面适宜的复合涂层合成温度为800℃,此时复合涂层具有最佳的耐蚀和耐磨性能。     

Positron Lifetime Study of the Single-Phase B2 Ni100-xAlx and Ni50-xCoxAl50 Intermetallics

To whom correspondence should be addressedE-mail: jtguo@imr.ac.cn1. IntroductionIt is now well established that the mechanicalproperties of NIAI are strong functions of composition and often of thermal history. These dependencieshave been correlated in part to the presence of pointdefects. The observation of off-stoichiometric hardening in NiAI, for instance, has been attributed tothe constitutional point defects[1'2]. Previous investigators have attempted to relate this hardening tothe co…     

Broadband NIR emission in sol-gel Er(3+)-activated SiO2-Ta2O5 glass ceramic planar and channel waveguides for optical application

An Er(3+)-doped SiO2:Ta2O5 optical channel waveguide and nanocomposite were prepared by the sol-gel route at a Si:Ta 50:50 molar ratio. Channels with an excellent surface profile were easily and quickly fabricated by focusing a femtosecond laser onto the surface of multilayered films deposited on SiO2/Si substrates. In parallel, the same sol used to prepare the film was annealed at 900, 1000, and 1100 degrees C for 2 h, to get the nanocomposite materials. A broadband NIR emission around 1538 nm, assigned to the 4I13/2 --> 4I15/2 transition of the Er3+ ions was observed in the nanocomposites of amorphous SiO2 containing dispersed Ta2O5 nanocrystals. The 4I13/2 lifetime and emission bandwidth depend on the annealing temperature. In conclusion, Er(3+)-doped SiO2:Ta2O5 channel waveguides and nanocomposites are promising materials for photonic applications.