La掺杂对磁控溅射CaB6薄膜的影响

利用直流磁控溅射的方法制备掺La和未掺La的Ca_1-xLa_xB₆ (x = 0, 0.01, 0.02, 0.03)薄膜。利用原子力显微镜对薄膜的表面形貌及厚度进行表征。掺La的薄膜的厚度约为未掺杂的两倍; La的掺杂会使薄膜的晶粒尺寸变大。利用X射线光电子能谱对薄膜表面的化学组成进行检测。薄膜中Ca/La比接近理论值, 没有检测到其它的铁磁性杂质及元素, 尤其是Fe。Ca_0.98La_0.02B₆薄膜具有最大的室温饱和磁化强度, 强度值为84.54 emu/cm³。同时薄膜的饱和磁化强度值随薄膜厚度的增加而降低。在Ca_1-xLa_xB₆薄膜中, B₆空位是薄膜磁性的主要来源, 其它类型的缺陷例如晶界等, 同样影响着薄膜磁性的大小。     

不同退火温度下Zn0.96Co0.04O薄膜的磁性研究

通过对磁控溅射方法制备的Zn_0.96Co_0.04O薄膜退火前后结构和磁性的研究发现,Co进入ZnO的晶格中并取代了Zn的位置,形成稀磁半导体结构,显示了室温铁磁性。后期真空退火可以产生更多的氧空位,提高BMP之间发生交叠的几率,从而使磁矩增大。因此可以认为氧空位是产生磁性的必要条件,其磁性来源机制符合J.M.D.Coey的BMP模型。     

脉冲激光沉积制备Co掺杂ZnO薄膜的磁学性质研究

采用脉冲激光沉积的方法, 利用Zn_0.95Co_0.05O陶瓷靶, 在不同氧气压力下制备Zn_1-xCo_xO薄膜. 利用X射线衍射(XRD)、电子探针、吸收光谱对薄膜中Co含量、Co²⁺离子比例以及相组成进行了定量分析, 研究了沉积过程中氧气压力对薄膜中Co含量的影响, 定量讨论了薄膜中Co含量、Co²⁺离子比例以及相组成与薄膜室温磁性之间的关系, 分析了薄膜磁性的起源. 分析结果表明: 薄膜中Co含量随氧气压力增大而减少, Co以替位Co²⁺离子为主. 精细XRD分析表明, 薄膜中存在纳米尺度的金属Co团簇, 其含量与薄膜室温磁性估计的结果一致, Zn_1-xCo_xO薄膜的室温磁性归因于金属Co纳米团簇的超顺磁磁化机制.     

不同生长温度下Zn1-xSbxO薄膜的结构与发光性能研究

采用固相反应法制备了不同比例的Sb掺杂ZnO靶材,并用脉冲激光沉积(PLD)法在Si(100)基底上制备了Zn_1-xSb_xO薄膜。通过XRD、光致发光(PL)谱对所制薄膜进行了结构表征和性能分析,探讨了不同Sb掺杂量和不同生长温度对薄膜结晶质量和发光性能的影响。结果表明：对比纯ZnO的PL谱发现ZnSbO薄膜出现了紫外峰,且随着Sb浓度的增加,所有发光峰的强度相对增大;针对Zn_0.98Sb_0.02O薄膜,不同的基底生长温度改变了薄膜的紫外和蓝光发射强度,500℃下薄膜具有最好的结晶质量和最强的发光峰;对于500℃下生长的Zn_0.98Sb_0.02O薄膜,当激发光源波长从325nm变化到300nm,峰位红移,而且紫外峰与蓝光锋强度比由1∶3变为12∶1。据此,可以通过改变Sb掺杂量、生长温度和激发光源波长,从而制备出不同波段、不同强度的发光器件。     

质子辐照对多层膜巨磁电阻结构磁性能的影响

研究了质子辐照对多层膜巨磁电阻结构磁性能的影响。利用5 MeV的不同辐照剂量和剂量率的质子对磁控溅射法制备的CoFe/(CoFe/Cu)₁₀/CoFe/Ta多层膜巨磁电阻结构进行辐照实验。XRD分析表明质子辐照没有改变CoFe/Cu的晶格结构。分析磁滞回线和磁电阻曲线得知在实验选取的辐照剂量范围内, 饱和磁化强度和本征电阻随着辐照剂量的增加而增加, 而矫顽场和磁电阻率随剂量的增加而减小。利用质子辐照对自旋相关散射、平均自由程的影响解释了本征电阻的变化, 并基于二流体模型对磁电阻率的变化进行了分析。由此得出, 多层膜巨磁电阻结构具有一定的抗辐照能力。     

La掺杂对磁控溅射CaB_6薄膜的影响（英文）

利用直流磁控溅射的方法制备掺La和未掺La的Ca_(1-x)La_xB_6(x=0,0.01,0.02,0.03)薄膜。利用原子力显微镜对薄膜的表面形貌及厚度进行表征。掺La的薄膜的厚度约为未掺杂的两倍;La的掺杂会使薄膜的晶粒尺寸变大。利用X射线光电子能谱对薄膜表面的化学组成进行检测。薄膜中Ca/La比接近理论值,没有检测到其它的铁磁性杂质及元素,尤其是Fe。Ca_(0.98)La_(0.02)B_6薄膜具有最大的室温饱和磁化强度,强度值为84.54 emu/cm~3。同时薄膜的饱和磁化强度值随薄膜厚度的增加而降低。在Ca_(1-x)La_xB_6薄膜中,B_6空位是薄膜磁性的主要来源,其它类型的缺陷例如晶界等,同样影响着薄膜磁性的大小。     

ZnO白漆的质子辐照损伤与光学性能退化机理

为进一步阐明ZnO白漆的辐照损伤与光学性能退化机理,在模拟的空间环境下对S781白漆进行了150keV质子辐照实验。质子辐照后,在原位条件下测试了光谱反射系数和太阳吸收比的退化规律,并利用模拟仿真和光致荧光光谱研究了ZnO白漆与质子间的微观交互作用和辐照诱发缺陷。结果表明,质子辐照下ZnO颜料发生电离生成-1价锌空位,是S781白漆出现b带吸收和光学性能退化的主要原因。此外,本工作支持了ZnO绿带荧光源于锌空位的第一原理计算结果。     

MOD方法制备Y0.5Yb0.5BCO薄膜及其性能研究

采用低氟金属有机物沉积工艺, 通过将浓度相同的YBCO、YbBCO前驱溶液按1: 1的体积比混合, 使元素Yb部分取代Y, 成功制备了Y_0.5Yb_0.5BCO薄膜. 该薄膜成份单一, 具有很好的双轴织构; 薄膜表面平整致密, 没有裂纹和孔洞, 元素分布均匀. 虽然Yb部分取代Y降低了薄膜的临界转变温度(T_c), 但有效提高了薄膜在高场下的场性能, 如在77K, 3T磁场下, Y_0.5Yb_0.5BCO薄膜的J_c值提高了1.26倍. 为了进一步改善薄膜在低场下的性能, 通过在Y_0.5Yb_0.5BCO前驱溶液中再加入6 mol%的TaCl₅, 成功地制备了Ta⁵⁺掺杂的Y_0.5Yb_0.5BCO薄膜, 提高了薄膜在整个磁场范围内的载流能力.     

热处理氛围对Ti0.962Mn0.038O2薄膜磁性的影响

研究了空气和真空氛围烧结的溶胶-凝胶制备的Ti0.962Mn0.038O2薄膜的结构和磁学性质.结构测量表明,在空气和真空两种氛围,样品经过500℃烧结,均为单一的锐钛矿相.真空中烧结的样品存在更多的氧空位或结构缺陷.磁性测量表明:在两种氛围烧结的样品均具有室温铁磁性,在真空中烧结的样品的磁性明显强于空气中烧结的样品,前者饱和磁化强度为0.285μB/Mn,后者饱和磁化强度为0.08μB/Mn.实验结果表明氧空位或结构缺陷增多,有利于Mn离子之间通过氧空位或结构缺陷发生铁磁交换作用,从而导致薄膜磁性增强.     

活性炭模板法制备锡酸锌掺杂磷化合物及表征

选用磷酸活化后的活性炭为模板,NaSnO₃·3H₂O、ZnSO₄·7H₂O为原料,通过生物质模板法制备了锡酸锌掺杂磷(Zn₂SnO₄/P)化合物。通过X射线粉末衍射(XRD)、扫描电子显微镜(SEM)和N_2吸脱附等温线对制备的Zn₂SnO₄/P的结构、形貌进行表征。结果表明:Zn₂SnO₄/P为尖晶石结构,其形貌基本上和活性炭相匹配。其比表面积、孔体积和平均孔径分别为87m²/g、0.20cm³/g和9.0nm。     

Synthesis and optical properties of nanocrystalline V-doped ZnO powders

This paper reports the synthesis and optical properties of nanocrystalline powders of V-doped ZnO (i.e. Zn_0.95V_0.05O, Zn_0.90V_0.10O, and Zn_0.85V_0.15O) by a simple sol–gel method using metal acetylacetonates of Zn and V and poly(vinyl alcohol) as precursors. Structure of the prepared samples was studied by X-ray diffraction, FTIR spectroscopy, and selected-area electron diffraction (SAED) analysis. The morphology of the powders revealed by SEM and TEM was affected by the amount of V, causing the formations of both nanoparticles and nanorods in the Zn_0.95V_0.05O sample, nanorods in the Zn_0.90V_0.10O sample, and nanoparticles in the Zn_0.85V_0.15O sample. The optical properties of the samples were investigated by measuring the UV–VIS absorbance and photoluminescence spectra at room temperature. All the samples exhibited UV absorption at below 400 nm (3.10 eV) with a well-defined absorbance peak at around 364 nm (3.41 eV) and 288 nm (4.31 eV). The band gap of the V-doped samples shows a decrease with increasing V concentration. The photoluminescence spectra of all the samples showed a strong UV emission band at 2.98 eV, a weak blue band at 2.82 eV, a week blue–green band at 2.56 eV, and a weak green band at 2.34 eV, which indicated their high structural and optical quality.     

Vacancy-mediated ferromagnetism in Co-implanted ZnO studied using a slow positron beam

Co\(^+\) ions with multiple energies from 50 to 380 keV were implanted into ZnO single crystals up to a total dose of \(1.25\times 10^{17}\,\hbox {cm}^2\). The implanted samples were annealed in open air for 30 min between 200 and 1100 \(^{\circ }\)C. All the samples before and after implantation and annealing were characterized by X-ray diffraction (XRD), Raman scattering and positron annihilation measurements. XRD and Raman scattering measurements indicate that Co implantation induces severe lattice damage, and after annealing the damage recovers gradually. No Co clusters or Co-related second phase was observed in the implanted samples. Doppler broadening of positron annihilation radiation measurements using a slow positron beam reveals a large number of vacancy clusters introduced by Co implantation. After annealing up to 1000 \(^{\circ }\)C, almost all the defects induced by implantation are removed. The implanted samples show clear ferromagnetism measured at 5 K. It shows very slight decrease after annealing at 700 \(^{\circ }\)C and becomes much weaker after annealing at 1000 \(^{\circ }\)C. The origin of ferromagnetism is most probably due to substitution of Co\(^+\) ions at Zn lattice sites. However, it is apparent that the decrease in magnetization after annealing is consistent with the vacancy recovery process, indicating that the ferromagnetism in Co-implanted ZnO is mediated by defects such as Zn vacancy (V\(_{Zn}\)) or vacancy clusters. First principles calculations also support that Zn-related monovacancies and vacancy clusters can enhance the ferromagnetism in Co-doped ZnO.     

Effects of dopants on magnetic properties of Cu-doped ZnO thin films

We report the observation of room temperature ferromagnetism (FM) in Cu-doped ZnO (ZnO: Cu) thin films synthesized by sol–gel technique. While donor Al³⁺ cations are introduced into the ZnO: Cu films, the saturation magnetization decreases rapidly. Cu 2p core-level X-ray photoelectronic spectra demonstrate that the FM is strongly correlated with Cu²⁺ cations (3d ⁹ configuration). To further study the relationship between the FM and acceptors, Na⁺ cations are also introduced into the ZnO: Cu films to increase the saturation magnetization. The enhanced FM in the (Cu, Na)-codoped ZnO is suggested to be due to the hybridization between delocalized holes and spin-split Cu 3d states.     

MgCl2对锌在干湿交替环境中腐蚀行为的影响

使用腐蚀失重、X射线衍射(XRD)、扫描电子显微镜与能谱(SEM-EDS)等手段研究了干湿交替环境中MgCl₂对锌腐蚀行为的影响。结果表明,MgCl₂对锌的腐蚀有显著的抑制作用;在沉积NaCl条件下锌表面的腐蚀产物为Zn₅(OH)₈Cl₂·H₂O、Zn₄CO₃(OH)₆·H₂O和Zn(OH)₂,而在沉积MgCl₂条件下锌表面的腐蚀产物只有Zn₅(OH)₈Cl₂·H₂O。在干湿交替环境中MgCl₂对锌腐蚀行为的影响主要是Mg²⁺与氧还原反应产生的OH^-结合使阴极区的pH值降低造成的。     

Impact of Li<Superscript>3+</Superscript> ion irradiation on magnetic properties of Mn doped ZnO: correlation with defects and structural property

Present work aims to study the impact of 50 MeV Li³⁺ ion irradiation on magnetic properties and their correlation with the substitutional incorporation of Mn at Zn site (Mn_Zn) and defects in Mn:ZnO (Mn doped ZnO). 2 at% Mn:ZnO has been synthesized by solid-state reaction method and irradiated with fluences 10¹², 10¹³ and 10¹⁴ ions/cm². The concomitant changes have been probed by X-ray diffraction (XRD), transmission electron microscopy (TEM) and magnetization measurements. XRD patterns indicate single-phase nature of the samples and Mn_Zn nicely varied with fluence of irradiation. Temperature dependent dc and ac magnetization (M-T) measurement reveals a minor presence of spin glass nature or superparamagnetism (SPM) though all of the samples are strongly intrinsically ferromagnetic and field dependent magnetization (M-H) measurement actually confirms this observation. It is noteworthy to observe that the ordering of spins and the magnetic parameters viz. saturation magnetization (M_S), remnant magnetization (M_R) and coercivity (H_C) can be tuned by fluences of irradiation. Finally, proportion of defect [particularly zinc vacancy (V_Zn)] and Mn_Zn seems to dictate the trend of variation of magnetization (M_S and M_R). Temperature dependent ac magnetization measurement and magnetic relaxation measurement actually detect a weak spin glass nature of the samples and eliminate the possibility of SPM.     

Zn2GeO4微米球的一步合成及其光催化制氢活性

采用微波辅助水热法一步合成尺寸约为5 μm的Zn₂GeO₄微米球。实验研究了微波水热的反应温度、反应时间、乙酸锌与氧化锗的摩尔比等因素对合成Zn₂GeO₄微米球的影响。采用FE-SEM、TEM、XRD和UV-Vis对合成的微米球进行表征。结果表明, 当乙酸锌：氧化锗为6:2, 微波辐射温度为170℃, 反应时间10 min, 尿素用量3.604 g, 制备的Zn₂GeO₄微米球具有良好的光催化效果。实验测试Zn₂GeO₄微米球比表面积为13 m²/g, 在紫外光辐射下, 在甲醇体系中的光解水产氢速率可达到3.76 mmol/(h·g)。该方法缩短反应时间, 增强了光催化活性。     

Zinc oxide thin films by the spray pyrolysis method

Undoped and In-doped ZnO thin films have been prepared on glass substrates from solutions of Zn(CH₃CO₂)₂2H₂O in a mixture of deionized water and isopropyl alcohol by spray pyrolysis. Their optical, morphological and structural qualities have been studied and the effect of the preparation conditions discussed. It was shown that the main factors determining the parameters of ZnO films are the growth temperature and the indium concentration. The growth temperatures of 625–675 K, indium doping levels of 1–1.5 at.% and precursor concentrations of 0.1–0.2 mol 1⁻¹ are preferable to achieve ZnO films with optical and structural qualities as required for solar cell applications.     

Effects of substrate temperature on structural, electrical and optical properties of As-doped ZnO films

As-doped ZnO films were prepared by co-sputtering ZnO and Zn₃As₂ targets on glass substrates at various temperatures from 250 to 500 °C. The effects of substrate temperature on structural, electrical and optical properties of the films were investigated. The films grown at temperatures from 250 to 400 °C were c-axis oriented and those deposited above 400 °C exhibited poor crystallinity. Hall measurement showed that p-type ZnO:As films were prepared at different temperatures. With increasing the substrate temperature from 250 to 500 °C, the optical band gap (E_g) first decreased, and then increased. The E_g changes upon the substrate temperature were due to the effect of substrate temperature on the crystallinity of ZnO films.