离子束增强沉积制备TiB2薄膜及其性能研究

用离子束增强沉积法（ＩＢＥＤ）在硅及铜基体上沉积了ＴｉＢ２薄膜，研究了轰击离子束能量和束流对薄膜的微结构及力学性能的影响。用俄歇电子谱（ＡＥＳ）分析了膜的成分及其界面状况，用Ｘ射线衍（ＸＲＤ）研究了膜的微结构，并测定了膜的硬度及进行膜的高温氧化试验。结果指出：（１）离子束轰击使薄膜晶化，从而影响到膜的硬度及抗高温氧化性能；（２）离子呸增强的二硼化钛薄膜是一种耐高温氧化的高硬膜。     

轰击能量对离子束增强沉积Cr-N薄膜微观结构和硬度的影响

采用离子束增强沉积（IBED）技术，在不同能量氮离子的辅助轰击下制备了Cr－N薄膜；通过SEM观察、XRD分析和显微硬度测定，发现离子轰击能量对Cr－N薄膜的表面形貌、相组成和硬度有显著的影响：随着能量的升高，膜表面形貌由岛形颗粒状转变成蜂窝状；一定能量轰击下获得的Cr2N和CrN混相结构有最高的薄膜硬度；高达16keV的氮离子轰击可诱发非晶化的出现，并对膜有一定的强化作用。在此基础上探讨了离子轰击能量对合成Cr－N薄膜结构与性能的影响效应。     

低能离子束轰击对非晶Ni-P薄膜组织与性能的影响

用X－射线衍射仪（XRD），俄歇电子能谱分析仪（AES），电子探针（EPMA），差示扫描量热仪（DSC）和超微显微硬度计研究了低能氮离子束对非晶Ni-P合金镀层进行轰击的晶化规律，分析了在低能氮离子束作用下的非晶薄膜的组织结构和显微硬度，结果表明，用能量为3．0－4．0keV，束流为80－200mA的低能氮离子束对非晶Ni-P镀层进行轰击，镀层中可以晶化析出Ni和Ni3P相，并在Ni(111）晶面上出现择优取向。随低能氮离子束的轰击能量和束流的增大，Ni-P非晶镀层中Ni和Ni3P的晶化温度下降，束流对晶化温度的影响比加速电压的影响大。载能粒子对非晶薄膜的作用，产生氮离子注入效应，使表层的含氮量增加。随束流的增加，显微硬度增加减缓，而随氮离子束加速电压增加，显微硬度增加明显，在4000V加速电压的氮离子束轰击下，显微硬度达到HV2131，比一般退火晶化方法所得到的显微硬度显著提高。     

镀膜参数对离子束增强沉积氮化硼薄膜中立方相含量的影响

本文介绍用离子束增强沉积（ＩＢＥＤ）法在硅片上制备氮化硼（ＢＮ）薄膜及镀膜参数对膜中立方氮化硼（ｃ－ＢＮ）含量的影响的试验研究，主要研究轰击离子束密、镀膜速率、轰击束中氩气的含量及衬底温度的影响。用红外（ＩＲ）谱对膜进行了分析，结果指出：（１）在给定的轰击束能量与束密下氮化硼薄膜中立方相的含量是随镀膜速率而变化的，且存在一个最佳镀膜速率值；（２）提高离子轰击束密，则此最佳镀膜速率值也相应增大；（３）镀膜速率又是随轰击束密及轰击束中氩气含量的增大而减小的；（４）衬底温度在４００℃以下时，膜中ｃ－ＢＮ相的含量随温度提高而增加。     

轰击能量对离子束增强沉积Cr—N薄膜微观结构和硬度的影响

采用离子束增强沉积（ＩＢＥＤ）技术，在不同能量氮离子的轴助轰击下制备了Ｃｒ－Ｎ薄膜，通过ＳＥＭ观察、ＸＲＤ分析和显微硬度测定，发现离子轰击能量对Ｃｒ－Ｎ薄膜的表面形貌、相组成和硬度有显著的影响；随着能量的升高，膜表明形貌由岛形颗粒状转变成蜂窝状；一定能量轰击下获得的Ｃｒ２Ｎ和ＣｒＮ混相结合有最高的薄膜硬度；高达１６ｋｅＶ的氮离子轰击可诱发非晶化的出现，并对膜有一定的强化作用。在此基础上探讨了离子轰     

类金刚石碳膜的结构特性与耐磨性能

采用双离子束增强沉积（IBED）和离子束直接沉积（IBD）技术，在CHn 能量为200~550eV和3～25keV范围内沉积的类金刚石薄膜具有光滑平坦的表面和非晶结构。X光电子谱和Raman光谱分析、以及显微硬度测量的结果表明，随着轰击离子能量的降低，薄膜的金刚石特性增强；在200～550eV能量范围内制备的DLC膜具有明显的sp3键特征和很高的显微硬度。沉积在GCr15钢上的DLC膜与GCr15钢的摩擦学对比实验表明，DLC膜具有很低的摩擦系数、比磨损率和高的抗磨损指数，这证明采用上述两种方法制备的DLC膜具有优良的抗摩擦磨损性能。     

Ti-B超硬薄膜的合成及其显微结构和显微硬度的研究

采用离子束增强沉积方法，在p型（100）单晶硅衬底上，通过不同能量的氙离子辅助轰击，以不同的沉积速率制备了Ti－B超硬薄膜。X射线衍射分析结果表明，Ti-B薄膜呈TiBx多晶结构，其晶化程度随蒸发速率的不同而变化，而其缺位值x随氙离子轰击能量的不同而变化。超显微硬度的测试结果表明，氙离子束能量为60keV，沉积速率为0．6nm／s时，可以获得性能最佳的Ti-B超硬薄膜，其本征硬度在测试负荷为5mN时达28．6GPa，超过了TiB体材料的硬度水平，是衬底硅片的3．2倍。利用SEM观察了Ti-B薄膜的横断面，并讨论了工艺参数对Ti－B超硬薄膜韧性的影响。     

离子轰击能量对ZrN/TiAlN纳米多层膜性能的影响

使用超高真空离子束辅助沉积系统(IBAD)制备一系列具有纳米调制周期的ZrN/TiAlN多层膜,研究了离子辅助轰击对薄膜性能的影响.结果表明:离子辅助轰击使大部分ZrN/TiAlN多层膜的纳米硬度和弹性模量值高于两种个体材料硬度的平均值;离子的轰击和薄膜表面原子与轰击离子之间的动量传输提高了薄膜的致密度;当轰击能量为200 eV时,多层膜的硬度最高(30.6 GPa),弹性模量、表面粗糙度和摩擦系数等也明显改善.     

IBAD合成CNx／NbN纳米多层膜

用离子束辅助沉积技术（ＩｏｎＢｅａＡｓｓｉｓｔｅｄＤｅｐｏｓｉｔｉｏｎ，ＩＢＡＤ）制成ＣＮｘ／ＮｂＮ纳米多层膜，研究了工艺参数（轰击能量，基片温度）对膜的结构和性能的影响，分析表明，多层膜内的ＮｂＮ为多晶结构，在轰击能量为４００ｅＶ，基片温度为６００℃时，得到了与β－Ｃ３Ｎ４的晶面间距相对应的三条电子衍射环，基片温度的上升，膜层的硬度上升，轰击能量增大，则膜层的硬度表现为先上升后下降，最大显微硬度     

离子束增强沉积制备碳化硼及C-B-Ti化合物薄膜的结构与力学性能的研究

利用离子束共混制备具有高硬度、高熔点及良好化学稳定性的C，B化合物（如：碳化硼、硼化钛等），对于采用离子束增强沉积技术进行材料表面改性有重要意义。利用对烧结碳化硼化合物靶进行溅射沉积，同时利用不同能量的Ar 进行轰击的方法，制备了碳化硼及碳、硼、钛混合薄膜，并对它们的结构与力学性能进行了研究。     

离子辅助轰击能量对类金刚石薄膜性能的影响

研究了利用ＩＢＡＤ方法沉积类金刚石薄膜时,离子的辅助轰击能量对薄的微观结构、表面粗糙度,弹性、硬度以及摩擦系数的影响,获得了机械和摩擦性能优异的类金刚石薄膜。讨论了薄膜微观结构和性能之间的关系。分析了不同硬度测试方法的差异。     

离子束辅助沉积碲化铅薄膜的AFM研究

利用原子力显微镜（AFM）研究了离子束辅助沉积碲化铅（Pblle）薄膜的微观结构和表面形貌。结果表明,传统热蒸发方法制备的碲化铅薄膜呈现出明显的柱状结构,离子束轰击可以显著改变薄膜的微观结构,导致柱状结构的逐渐消失和晶粒的长大。     

Adherent amorphous hydrogenated carbon films on metals deposited by plasma enhanced chemical vapor deposition

This paper reports the findings of a study of the structural, mechanical, and tribological properties of amorphous hydrogenated carbon (a-C:H) coatings for industrial applications. These thin films have proven quite advantageous in many tribological applications, but for others, thicker films are required. In this study, in order to overcome the high residual stress and low adherence of a-C:H films on metal substrates, a thin amorphous silicon interlayer was deposited as an interface. Amorphous silicon and a-C:H films were grown by using a radio frequency plasma enhanced chemical vapor deposition system at 13.56 MHz in silane and methane atmospheres, respectively. The X-ray photoelectron spectroscopy technique was employed to analyze the chemical bonding within the interfaces. The chemical composition and atomic density of the a-C:H films were determined by ion beam analysis. The film microstructure was studied by means of Raman scattering spectroscopy. The total stress was determined through the measurement of the substrate curvature, using a profilometer, while micro-indentation experiments helped determine the films' hardness. The friction coefficient and critical load were evaluated by using a tribometer. The results showed that the use of the amorphous silicon interlayer improved the a-C:H film deposition onto metal substrates, producing good adhesion, low compressive stress, and a high degree of hardness. SiC was observed in the interface between the amorphous silicon and a-C:H films. The composition, the microstructure, the mechanical and tribological properties of the films were strongly dependent on the self-bias voltages. The tests confirmed the importance of the intensity of ion bombardment during film growth on the mechanical and tribological properties of the films.     

DC magnetron sputtering of Si to form SiO2 in low-energy ion beam

Silicon dioxide (SiO₂) films were deposited by magnetron sputtering and ion-beam oxidation (IBO) in separate zones at ambient temperature. The optical and structural characteristics of the films were analyzed by spectrophotometry, Fourier transform infrared absorption spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscope. The oxygen ratio in the ion beam and the energy of ion bombardment during deposition has strong influence on the optical and physical properties of SiO₂ films. The experimental results indicated that the IBO method could finely manipulate the structure and properties of the growing films.     

离子束技术沉积羟基磷灰石薄膜的结构及溶解性能

分别采用离子束溅射和离子束增强沉积技术,以烧结羟基磷灰石（HA）陶瓷为靶材,在纯钛金属基片表面沉积HA薄膜．X光电子能谱分析表明：薄膜中Ca、P、O元素的化学态与所用HA陶瓷靶材相接近;相比HA靶材,薄膜表面存在CO₃^2-．X射线衍射分析表明：沉积薄膜均为非晶态结构,经650℃退火处理转变为结晶磷灰石．在模拟体液中的溶解实验揭示：薄膜仅与溶液中Ca、P和O存在离子交换;薄膜易降解,浸泡10天,样品经历了降解、再沉积过程;相比离子束溅射沉积膜,离子束增强沉积膜具有加速沉积Ca、P的能力．     

离子束溅射沉积Ta2O5光学薄膜的实验研究

根据择优溅射的理论,在不同的通氧方式下,详细分析了离子辅助对离子束溅射沉积Ta2O5薄膜光学特性的影响。结果表明,在薄膜生长的过程中,由于氩离子的轰击作用,薄膜中的氧原子被优先溅射出来,造成了薄膜化学剂量比失调、吸收增加。但是,通过优化辅助离子源中氧气的比例,可获得合理化学剂量比、低损耗的Ta2O5薄膜。     

Effect of Ion Bombardment on the Structure and Properties of Polycrystalline Chromium Films

Polycrystalline chromium films were fabricated by electron beam evaporation with concurrent bombardment using argon ions from an ion gun or by sputtering with substrate bias. The microstructure and composition of the films were characterized using TEM/EDS. It was found that the grain size/shape, porosity, and argon content of the films strongly depend on the deposition parameters such as bombardment ion current density, deposition rate, argon pressure and substrate bias. Film properties including residual stress, resistivity, and reflectance were measured. A correlation of deposition, structure, and properties is discussed.     

The effect of the ion beam energy on the properties of indium tin oxide thin films prepared by ion beam assisted deposition

Indium tin oxide (ITO) thin films have been deposited onto polycarbonate substrates by ion beam assisted deposition technique at room temperature. The structural, optical and electrical properties of the films have been characterized by X-ray diffraction, atomic force microscopy, optical transmittance, ellipsometric and Hall effect measurements. The effect of the ion beam energy on the properties of the films has been studied. The optical parameters have been obtained by fitting the ellipsometric spectra. It has been found that high quality ITO film (low electrical resistivity and high optical transmittance) can be obtained at low ion beam energy. In addition, the ITO film prepared at low ion beam energy gives a high reflectance in IR region that is useful for some electromagnetic wave shielding applications.