直流磁控溅射制备大面积AZO透明导电薄膜

采用直流磁控溅射工艺于200℃的玻璃基板制备了大面积AZO透明导电薄膜。重点研究了样品晶体结构、方阻、可见光透过率、样品形貌等随其位置变化的情况。研究表明,大面积AZO薄膜的晶体结构、可见光透过率、样品形貌等随样品位置变化比较小,大面积AZO样品均按C轴取向生长,表面平整,晶粒尺寸为20 nm左右。在本实验条件下获得的大面积AZO薄膜方阻在86～110Ω/□范围内,方阻线性变动率为28%,样品电阻率为6.34～7.26×10-4Ω·cm,可见光平均透过率均高于87%。     

室温下射频磁控溅射制备ZnO:Al透明导电薄膜及其性能研究

采用射频磁控溅射技术,在室温下,以ZnO:Al2O3(2%Al2O3(质量比))为靶材,在石英玻璃基底上,采用不同工艺条件制备了ZnO:Al(AZO)薄膜。使用扫描电子显微镜观察了薄膜的表面形貌,X射线衍射分析了薄膜的结构,四探针测量仪得到薄膜的表面电阻,轮廓仪测量了薄膜厚度,并计算了电阻率,最后采用分光光度计测量了薄膜的透过率;研究了溅射功率、溅射气压与薄膜厚度对薄膜电阻率及透过率的影响。结果表明:所制备的AZO薄膜具有(002)择优取向,并且发现薄膜厚度对薄膜的光电性能有明显影响,溅射气压和溅射功率对薄膜电学性能有较大影响,但是对薄膜透过率影响不大。当功率为1kW、溅射气压0.052Pa、AZO薄膜厚度为250nm时,其电阻率为8.38×10-4Ω·cm,波长在550nm处透过率为89%,接近基底的本底透过率92%。当薄膜厚度为1125 nm时薄膜的电阻率降至最低(6.16×10-4Ω·cm)。     

CCP/ICP混合放电C4F8/Ar等离子体高、低频功率对AZO薄膜绒面效果的影响

室温下,采用射频磁控溅射方法在石英基片上制备掺铝氧化锌(AZO)透明导电薄膜。利用CCP/ICP混合放电C4F8/Ar等离子体对制得的AZO薄膜进行绒面处理。利用原子力显微镜(AFM)对薄膜表面形貌进行表征,利用光纤光谱仪分析放电产生的碳氟基团含量的变化。实验结果发现低频功率的增大能够有效增加等离子体中F原子的含量,进而提高薄膜的刻蚀效果,获得较好的绒面结构;但是高频功率变化对薄膜刻蚀效果影响较小。     

室温下射频磁控溅射制备ZnO∶Al透明导电薄膜及其性能研究

采用射频磁控溅射技术,在室温下,以ZnO∶Al203(2％Al2O3(质量比))为靶材,在石英玻璃基底上,采用不同工艺条件制备了ZnO∶Al(AzO)薄膜.使用扫描电子显微镜观察了薄膜的表面形貌,X射线衍射分析了薄膜的结构,四探针测量仪得到薄膜的表面电阻,轮廓仪测量了薄膜厚度,并计算了电阻率,最后采用分光光度计测量了薄膜的透过率;研究了溅射功率、溅射气压与薄膜厚度对薄膜电阻率及透过率的影响.结果表明:所制备的AZO薄膜具有(002)择优取向,并且发现薄膜厚度对薄膜的光电性能有明显影响,溅射气压和溅射功率对薄膜电学性能有较大影响,但是对薄膜透过率影响不大.当功率为1kW、溅射气压0.052 Pa、AZO薄膜厚度为250nm时,其电阻率为8.38×10-4Ω·cm,波长在550 nm处透过率为89％,接近基底的本底透过率92％.当薄膜厚度为1125 nm时薄膜的电阻率降至最低(6.16×10-4 Ω·cm).     

电子束蒸发技术制备ITO薄膜的光电特性和微结构研究

利用电子束蒸发技术制备ITO透明导电膜,研究了衬底温度,氧分压以及沉积速率的变化对薄膜光电特性的影响,结果表明在衬底为350℃,氧分压为2.0×10-2 Pa,沉积速率在3 nm/min的条件下制得透过率T81%,电阻率p=1.9×10-3 Ω·cm的ITO透明导电膜.另外我们通过XRD对样品的微结构进行了分析,发现薄膜晶格常数和晶粒大小随制备条件的不同,也有显著的规律变化.     

室温下高速沉积AZO薄膜的研究

在室温下,采用射频磁控溅射技术以较大的功率密度(7W/cm2)沉积了一系列掺铝氧化锌(AZO)透明导电薄膜,探索了溅射压强对沉积速率及薄膜性能的影响。结果表明,当工作压强为2.0Pa时,高速(67nm/min)沉积得到的薄膜的电阻率为2.63×10-3Ω.cm,可见光平均透过率为83%,并且在薄膜表面有一定的织构。     

绒面ZAO透明导电膜的制备工艺研究

绒面ZAO(ZnO∶Al,氧化锌铝)透明导电膜在硅基薄膜太阳能电池领域应用前景广阔,本文利用直流磁控溅射方法,采用氧化锌铝陶瓷靶材制备了ZAO透明导电膜,并用自制的腐蚀液对膜层进行腐蚀以便形成太阳能电池所需要的表面凹凸起伏的绒面结构。研究了不同镀膜温度对膜层性能的影响,不同退火条件下膜层热稳定性的变化情况,不同腐蚀时间下膜层电阻、透过率以及表面形貌的变化,结果表明,在相同真空度、溅射功率和节拍的情况下,220℃下制备的ZAO透明导电膜膜层性能最好,腐蚀时间为30 s时获得的绒面效果好。     

Al-Sn共掺杂ZnO薄膜的结构与光电性能研究

采用射频磁控共溅射法在玻璃衬底上制备出了Al与Sn共掺杂的ZnO(ATZO)薄膜.在固定ZnO∶Al(AZO)靶溅射功率不变的条件下,研究了Sn靶溅射功率对ATZO薄膜的结晶质量、表面形貌、电学和光学性能的影响.结果表明,制备的ATZO薄膜是六角纤锌矿结构的多晶薄膜,具有c轴择优取向,而且表面致密均匀.当Sn溅射功率为5W时,330 nm厚度的ATZO薄膜的电阻率最小为1.49×10-3 Ω·cm,比AZO薄膜下降了22％.ATZO薄膜在400～900 nm波段的平均透过率为88.92％,禁带宽度约为3.62 eV.     

射频溅射功率对室温沉积AZO薄膜性能的影响

本文采用直流射频耦合磁控溅射技术,在玻璃基底上室温沉积AZO薄膜,将射频电源功率从0W增加到到200W。通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)、紫外分光光度计、霍尔效应测试系统重点研究了AZO薄膜的晶体结构、表面形貌、光学性能和电学性能。研究结果表明,直流射频耦合磁控溅射可以在室温下制备性能优异的AZO薄膜,且射频溅射功率对AZO薄膜光电性能有显著的影响,随着射频功率的提高,AZO薄膜致密性增加,粒子逐渐变大,薄膜表面形貌和生长形态发生一定变化。在射频功率为200W时,室温制备的AZO薄膜电阻率达到最低5.39×10~(-4)Ω·cm,薄膜平均可见光透过率达到82.6%。     

室温下高速沉积AZO薄膜的研究

在室温下，采用射频磁控溅射技术以较大的功率密度（7W／cm^2）沉积了一系列掺铝氧化锌（AZO）透明导电薄膜，探索了溅射压强对沉积速率及薄膜性能的影响。结果表明，当工作压强为2．OPa时，高速（67nm／min）沉积得到的薄膜的电阻率为2．63×10^-3Ω·cm，可见光平均透过率为83％，并且在薄膜表面有一定的织构。     

Ar流量对磁控溅射制备Al掺杂ZnO薄膜的影响

Al掺杂ZnO(AZO)具有电导率高、光学透射率高的优点,且原料来源丰富、制备成本低廉,被认为是最有应用潜力的透明导电薄膜。本文利用射频磁控溅射制备30 cm×30 cm尺寸大面积AZO薄膜,研究了气压恒定时,Ar流量对薄膜晶粒生长机制、电学和光学性能的影响。结果表明,AZO薄膜晶粒均表现出垂直基片方向的c轴择优取向生长,随Ar流量增大取向变弱;薄膜表面晶粒尺寸大小分布不均匀,随Ar流量增大,大晶粒数量增多,表面出现长度为100 nm、宽度为30 nm的棒状晶;随着Ar流量增大,载流子浓度由4.52×1020 cm-3略微增大至6.2×1020 cm-3,霍尔迁移率由4.79 cm2(/V·s)提升至10.46 cm2(/V·s),电阻率在Ar流量94 mL/min时达到最低值1.01×10-3Ω·cm。薄膜可见光平均透射率均大于78%,禁带宽度约3.8 eV。     

Ag层厚度对AZO/Ag/AZO透明导电薄膜性能的影响

在室温条件下,采用磁控溅射技术在玻璃衬底上生长了AZO/Ag/AZO多层透明导电薄膜。主要研究了Ag层厚度对多层透明导电薄膜结构和性能的影响。研究表明,AZO和Ag分别延(002)面和(111)面高度择优生长,随着Ag层厚度的增加,多层透明导电薄膜的电阻率不断降低,透过率呈现先降低再增加最后再降低的变化趋势,其中Ag层厚度为8nm的样品获得最大品质因子33.1×10^-3Ω^-1,综合性能最佳。     

湿法刻蚀对ZnO∶Al透明导电薄膜结构与性能的影响

室温下通过直流磁控溅射Al2O3掺杂3％(质量分数)的ZnO靶材制备了厚度约1μm、结晶度高、表面平整光滑的ZnO∶Al透明导电薄膜.研究盐酸、王水和草酸溶液对ZnO∶Al薄膜的湿化学刻蚀行为,分析刻蚀对薄膜微观结构、光刻图案、电学和光学性能的影响.结果表明,刻蚀对薄膜的结晶取向性无影响;经盐酸、王水和草酸刻蚀后薄膜的电阻率略有增大,从7.4mΩ·cm分别增大到8.7mnΩ· cm、8.8mQ·cm和8.6mΩ·cm;透光率略有下降,从80％分别下降到76％、77％和78％.0.5％的盐酸刻蚀可以获得结构良好的陷光结构.薄膜在盐酸中刻蚀速率快,易产生浮胶;在草酸中刻蚀图案清晰,但存在残留;在王水中刻蚀图案清晰且无残留.     

Effect of Enhanced Plasma Density on the Properties of Aluminium Doped Zinc Oxide Thin Films Produced by DC Magnetron Sputtering

Aluminum doped zinc oxide (AZO) thin films were prepared by DC magnetron sputtering at low substrate temperature. A coaxial solenoid coil was placed near the magnetron target to enhance the plasma density (Ji). The enhanced plasma density improved significantly the bulk resistivity (ρ) and its homogeneity in spatial distribution of AZO films. X-ray diffraction (XRD) analysis revealed that the increased Ji had inuenced the crystallinity, stress relaxation and other material properties. The AZO films deposited in low plasma density (LPD) mode showed marked variation in ρ (ranging from ～6.5×10?2 to 1.9×10-3 ·cm), whereas those deposited in high plasma density (HPD) mode showed a better homogeneity of films resistivity (ranging from ～1.3×10?3 to 3.3×10?3 ?·cm) at di?erent substrate positions. The average visible transmittance in the wavelength range of 500-800 nm was over 80%, irrespective of the deposition conditions. The atomic force microscopy (AFM) surface morphology showed that AZO films deposited in HPD mode were smoother than that in LPD mode. The high plasma density produced by the coaxial solenoid coil improved the electrical property, surface morphology and the homogeneity in spatial distribution of AZO films deposited at low substrate temperature.     

Characterization of aluminum-doped zinc oxide thin films by RF magnetron sputtering at different substrate temperature and sputtering power

In this study, transparent conductive Al doped zinc oxide (ZnO: Al, AZO) thin films with a thickness of 40 nm were prepared on the Corning glass substrate by radio frequency magnetron sputtering. The properties of the AZO thin films are investigated at different substrate temperatures (from 27 to 150 °C) and sputtering power (from 150 to 250 W). The structural, optical and electrical properties of the AZO thin films were investigated. The optical transmittance of about 78 % (at 415 nm)–92.5 % (at 630 nm) in the visible range and the electrical resistivity of 7 × 10^?4 Ω-cm (175.2 Ω/sq) were obtained at sputtering power of 250 W and substrate temperature of 70 °C. The observed property of the AZO thin films is suitable for transparent conductive electrode applications.     

Influence of hydrogen on the properties of Al and Ga-doped ZnO films at room temperature

Low resistivity and high transmittance of Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) transparent conductive thin films have been achieved by use of pulsed dc magnetron sputtering in a hydrogen environment at room temperature. The addition of hydrogen to the sputtering gas can reduce the resistivity of the films and improve their electrical properties compared to those prepared without H2, because the hydrogen acts a shallow donor. The average transmittance was over 85% in the visible region, and the lowest resistivity of the AZO and GZO films was 4.01×10(-4) (Ω-cm) and 4.39×10(-4) (Ω-cm), respectively.     

氢化及沉积温度对掺铝ZnO透明导电薄膜性能影响

采用射频磁控溅射方法在玻璃衬底上制备了掺铝ZnO透明导电薄膜(AZO)。为了降低AZO薄膜的电阻率, 采用在溅射气氛中通入一定比例H₂的方法对AZO薄膜进行氢化处理, 并研究了溅射气氛中H₂含量及衬底温度对AZO薄膜氢化效果的影响。结果表明: 在低温条件下, 氢化处理能有效降低AZO薄膜的电阻率; 在衬底温度为100℃的低温条件下, 通过调节溅射气氛中H₂的比例, 制备了电阻率为6.0×10^-4 Ω·cm的高质量氢化AZO薄膜, 该电阻值低于同等条件下未氢化AZO薄膜电阻值的1/3; 但随着衬底温度的升高, 氢化处理对薄膜电学性能的改善效果逐渐减弱。     

溅射功率对AZO透明导电薄膜的影响

采用射频磁控溅射法在玻璃衬底上沉积了AZO透明导电薄膜,并用原子力显微镜观测了薄膜表面形貌,XRD测试了薄膜相结构和单色仪测试了薄膜透射率。结果表明,制备的薄膜具有高度c轴择优取向性,其表面平整,晶粒均匀致密。当溅射功率为180W、溅射气体流量为15sccm、基片温度为200℃时制得的薄膜方阻为10Ω/□,在可见光区平均透射率大于85%。     

Room temperature deposition and properties of ZnO:Al thin films by nonreactive DC magnetron sputtering

Transparent and conductive ZnO:Al (AZO) thin films were prepared at room temperature by nonreactive DC magnetron sputtering from ceramic ZnO:Al targets. The effects of Al doping level and argon gas pressure on microstructure, growth behavior, resistivity and transmittance of AZO thin films were investigated. The experimental results show that AZO thin films change from polycrystalline to preferred c-axis-orientation just at high argon gas pressure. The resistivity of AZO films first decreases with the increase of Al content under 3 wt%, then increases when the Al content is over 3 wt%. The argon gas pressure also effect on the resistivity of AZO thin films due to the change of dispersion related the grain and crystal boundary. When the argon gas pressure from 0.6 to 3.0 Pa, the resistivity of AZO films decreases to a lowest resistivity of 1.4 × 10⁻³ Ω cm when the argon gas pressure is 1.5 Pa, then increases gently. The Al content and argon gas pressure had a little influence on transmittance, and the average optical transmittances of AZO thin films were from 86% to 90%, but the absorption edge has a blue shift with the increase of doping level and argon gas pressure.