超声换能器的“电感-变压器”阻抗匹配模型研究

在分析超声换能器阻抗特性和电路匹配的基础上,对传统纯电感电容匹配电路模型进行电路仿真和阻抗分析,证明该模型在谐振频率附近有大范围的电抗变化,存在电路不稳定和电阻调节精度低的问题;提出"电感-变压器"阻抗匹配模型,通过电感和变压器分别调节换能器电阻和电抗,实现电路的精确匹配,以提高超声换能器阻抗匹配的精度和稳定性,并给出了理想的匹配条件和匹配参数。利用匝数可调的变压器和电感制作了超声换能器的匹配电路,对20.8 k Hz的变幅杆换能器进行了阻抗匹配的实验测量,结果证明这种"电感-变压器"阻抗匹配模型在谐振频率附近具有较小的电抗变化范围、较低的电阻变化率和较高的电抗调节精度,在超声换能器的自动阻抗匹配中具有良好的应用前景。     

超声换能器的宽带阻抗匹配器研究

在功率超声领域，换能器的阻抗匹配占有相当重要的地位，但有关在较宽频带内都能适用的匹配方案尚少有报道。为满足实验室研究工作需要，我们研制了两套简易匹配装置，可分别对２０～５０ｋＨｚ和０．２～２．０ＭＨｚ频率范围内的超声换能器实现阻抗匹配。     

超声果蔬清洗机匹配技术的研究

以160 kHz的超声果蔬清洗机为研究对象,设计了静态匹配电路。该电路由高频变压器实现阻抗匹配,串联电感实现调谐匹配。考虑到静态匹配只适合于换能器的一个谐振点,提出通过动态模拟换能器的工作状态来设计适合的匹配电感,使换能器在一定频率范围内,都可以维持在最佳状态。此外,为保证换能器参数变化后,仍能工作良好,设计了较实用的频率跟踪电路。     

双匹配层宽带超声换能器

超声换能器由支撑体、高介电常数和高声阻抗材料的压电层、第一阻抗匹配层和第二阻抗匹配层组成。第一匹配层为硅。     

表面波电磁声换能器及电声学特性的研究

电磁超声换能器的非接触、信号重复性好等特点使得其在高温自动检测、材料特性测量等领域有着广泛的应用前景。利用电磁超声技术激发表面波更是行之有效的方法,论文着重于理论分析,对表面波电磁声换能器的物理结构、电声学特性作了较为全面和深入的研究,并用等效电路模型探讨了阻抗匹配的方法。结果表明,电磁声换能器为感性负载,不同于压电器件的容性负载特性,因此对换能器的设计和优化也有着独自的特性;随着提离距离的增大,相应的换能效率也将急剧下降;阻抗匹配对于提高信号的输出强度,抑制谐波分量有着重要的作用,而采用电容并联匹配相比串联匹配,能够提供更高的转换效率。     

微波传输线阻抗匹配问题浅析

在通信系统的设计中，传输线的阻抗匹配是非常重要的一项工程技术指标，对于提高产品的可靠性，提高通信速度，改善电磁兼容特性都有重要的意义。本文首先介绍了传输线阻抗匹配的基本原理和方法，并对传输线阻抗匹配的实现方法进行浅析，最后提出一种计算机辅助设计多级传输线阻抗匹配的方案。     

B3 幅度加权曲面换能器的理论分析

Ｂ２超声换能器的宽带阻抗匹配器研究朱昌平，陈兆华，冯若，黄金兰，魏立升，李良学（荆州师专物理系湖北荆州·４３４１００）在功率超声领域，换能器的阻抗匹配占有相当重要地位，但有关在较宽频带内都能适用的匹配方案尚少见报道。为满足实验室工作需要，我们研制了两...     

推挽变换器的优化设计方法研究

推挽变换器一般由带有中心抽头的脉冲变压器和功率管构成，常用于驱动超声波换能器。使之向外界发送超声波.本文分析了推挽变换器的模型及其工作原理．提出了推挽变换器的优化设计方法，推导了推挽变换器能量转换效率的计算公式。实验表明，按文中提出的设计方法，可以确定变压器的最佳变比，实现超声波发生器的最佳能量传输。     

复频超声换能器的研究

研究了一种具有多个共振频率的功率超声换能器，即复频超声换能器。换能器由一个纵向振动夹心式压电超声振子和一个弯曲振动薄圆盘复合而成。给出了换能器的理论共振频率方程，对实际制作的换能器的共振频率，等效电阻抗及有效机电耦合系数进行了实验测试，并对换能器的大功率工作性能进行了定性的测量及观察。实验结果表明，给出的换能器可以在不同的振动模式上工作，因此具有许多共振频率，且对应换能器不同的共振频率，换能器的等     

圆柱大功率换能器的应用与发展

阐述了目前圆柱形大功率超声换能器在生物柴油、防垢除垢、大容积超声清洗、中药萃取、二次采油、污水降解处理以及在超声化学等方面的应用。针对换能器要求具有更大的功率及更高的效率，以及提商单位面积辐射功率及其可靠稳定性，简要介绍了近年来国外圆柱形大功率换能器在这些方面的发展概况。     

An analytical model of multilayer ultrasonic transducers with an inversion layer

Inversion layer ultrasonic transducers have been investigated recently as an interesting approach in wideband transducer design. In this paper we present an analytical model of multilayer ultrasonic transducers with an inversion layer. Our analysis of the wave propagation problem of an inversion layer transducer includes a functional decomposition of the electrical input impedance. It becomes clear from this decomposition that an inversion layer transducer can be modeled as three elements in series connection, i.e., a clamped capacitance, a classical motional impedance, and a coupled motional impedance. The first two elements make up the classical model of a single element transducer. The coupled motional impedance describes the coupled interaction between the regular and the inverted piezoelectric sublayers, and thus reflects the effect of an inversion layer. We present examples which show that inversion layer transducers are advantageous in achieving such useful features as dual-frequency operation mode as used in harmonic imaging or broadband performance desired in most ultrasonic applications.     

Radiation impedance and equivalent circuit for piezoelectric ultrasonic composite transducers of vibrational mode-conversion

The piezoelectric ultrasonic composite transducer, which can be used in either gas or liquid media, is studied in this paper. The composite transducer is composed of a longitudinal sandwich piezoelectric transducer, a mechanical transformer, and a metal circular plate in flexural vibration. Acoustic radiation is produced by the flexural circular plate, which is excited by the longitudinal sandwich transducer and transformer. Based on the classic flexural theory of plates, the equivalent lumped parameters for a plate in axially symmetric flexural vibration with free boundary conditions are obtained. The radiation impedance of the plate is derived and the relationship between the radiation impedance and the frequency is analyzed. The equivalent circuits for the plate in flexural vibration and the composite transducer are given. The vibrational modes and the harmonic response of the composite piezoelectric transducer are simulated by the numerical method. Based on the theoretical and numerical analysis, two composite piezoelectric ultrasonic transducers are designed and manufactured, their admittance-frequency curves are measured, and the resonance frequency is obtained. The flexural vibrational displacement distribution of the transducer is measured with a laser scanning vibrometer. It is shown that the theoretical results are in good agreement with the measured resonance frequency and the displacement distribution.     

Design of efficient, broadband single-element (20-80 MHz) ultrasonic transducers for medical imaging applications

This paper discusses the design, fabrication, and testing of sensitive broadband lithium niobate (LiNbO/sub 3/) single-element ultrasonic transducers in the 20-80 MHz frequency range. Transducers of varying dimensions were built for an f# range of 2.0-3.1. The desired focal depths were achieved by either casting an acoustic lens on the transducer face or press-focusing the piezoelectric into a spherical curvature. For designs that required electrical impedance matching, a low impedance transmission line coaxial cable was used. All transducers were tested in a pulse-echo arrangement, whereby the center frequency, bandwidth, insertion loss, and focal depth were measured. Several transducers were fabricated with center frequencies in the 20-80 MHz range with the measured -6 dB bandwidths and two-way insertion loss values ranging from 57 to 74% and 9.6 to 21.3 dB, respectively. Both transducer focusing techniques proved successful in producing highly sensitive, high-frequency, single-element, ultrasonic-imaging transducers. In vivo and in vitro ultrasonic backscatter microscope (UBM) images of human eyes were obtained with the 50 MHz transducers. The high sensitivity of these devices could possibly allow for an increase in depth of penetration, higher image signal-to-noise ratio (SNR), and improved image contrast at high frequencies when compared to previously reported results.     

Design of Relaxation Oscillator Based Ultra-wideband SFQ Amplifier for Chip to Chip Interconnection

In Rapid Signal Flux Quantum (RSFQ) logic circuits, on-chip interconnects and multichip module implementations for nearby distances have already been established. However, the flexible interconnection of two distant chips is still not achieved reliably due to impedance mismatching and attenuation. In this work, we propose a circuit that allows the usage of Passive Transmission Lines (PTLs) to transfer single-flux-quantum (SFQ) pulses between two distant chips which are separated by a distance greater than 10 cm by using 50 ?? transmission lines. For this purpose, we design an SFQ amplifier circuit to deal with impedance mismatch and attenuation problems. The circuit consists of two main parts: a relaxation oscillator (RO) circuit and an impedance transformer. The RO circuit utilizes relaxation oscillations occur in the underdamped Josephson junctions. The impedance matching circuit is an 8-section Chebyshev quarter-wave transformer and it eliminates impedance mismatching problem between the amplifier circuit and PTL. We performed circuit simulations and obtained voltage amplitude of about 600 ??V at the output of the circuit. The transformer has a broadband impedance matching with a fractional bandwidth (ratio of the bandwidth of a device to its central frequency) of 1.4 and a maximum Voltage Standing Wave Ratio (VSWR, the maximum voltage divided by minimum voltage on the transmission line) of 1.5.     

Group delay equalised monolithic microwave integrated circuit amplifier for ultra-wideband based on right/left-handed transmission line design approach

A group delay equalised InGaP/GaAs HBT monolithic microwave integrated circuit (MMIC) amplifier with an active balun for ultra-wideband (UWB) application has been developed. The MMIC consists of a broadband amplifier with an active balun and a group delay equaliser. The group delay equaliser was designed based on a theory using a composite right/left-handed (CRLH) transmission line. Adding a right-handed (RH) transmission line to a CRLH transmission line in parallel, a convex group delay characteristic is realised. Since various UWB components have concave group delay characteristics, the group delay equaliser can compensate a concave group delay characteristic of the amplifier in an operation frequency band. In this paper, dispersion, group delay and impedance characteristics for the proposed CRLH/RH circuit have been theoretically analysed. Moreover, a minimised group delay equaliser circuit on an MMIC has been designed and fabricated based on the proposed CRLH/RH circuit. A fabricated group delay equalised InGaP/GaAs HBT MMIC amplifier with an active balun exhibited an improved group delay characteristic compared with the MMIC amplifier without the group delay equaliser. The standard deviations of group delays for a frequency variation in a gain band were decreased from 12.8 to 5.5 ps at S₂₁ and decreased from 10.3 to 7.3 ps at S₃₁.     

Mechanisms of Peeling Failures of Bonds During Ultrasonic Wedge Bonding

The metallization of wire bonding pads on Si-based integrated circuits (ICs) contains Ti, TiN, and Al layers with vertical W-plugs located through the Ti and TiN layers. One percent Si-Al wire (32 µm in diameter) was bonded on the pads by an ultrasonic transducer using a wire bonding machine. Peeling failures occurred during the ultrasonic bonding process. The peeling fractures were examined using a scanning electron microscope (SEM) with an energy-dispersive spectroscopy (EDS) system. The results showed that bonds peeled off from the interface between the Al layer and the top surface of the W-plugs or from the interface between the Si-base and the bottom surface of the W-plugs. The distribution of W-plugs also affected the bond peeling from the top or bottom surfaces of the W-plugs. Mechanisms giving rise to the peeling failure of bonds were analyzed based on the acoustic impedance of materials, which determined the amount of ultrasonic energy transmitted from one material to another. Two different paths of ultrasonic energy transmission occurred during the bonding process due to the different acoustic impedances of the materials. One is from the Al layer, through the TiN and Ti layers, to the IC. The other is from the Al layer, through the W-plugs, to the IC. The different distributions of ultrasonic energy at the positions with W-plugs and without W-plugs caused stress concentrations around the top or bottom surfaces of the W-plugs, which resulted in peeling failures of the bonds.     

Design of advanced ultrasonic transducers for welding devices

A new high frequency ultrasonic transducer has been conceived, designed, prototyped, and tested. In the design phase, an advanced approach was used and established. The method is based on an initial design estimate obtained with finite element method (FEM) simulations. The simulated ultrasonic transducers and resonators are then built and characterized experimentally through laser interferometry and electrical resonance spectra. The comparison of simulation results with experimental data allows the parameters of the FEM models to be adjusted and optimized. The achieved FEM simulations exhibit a remarkably high predictive potential and allow full control of the vibration behavior of the transducer. The new transducer is mounted on a wire bonder with a flange whose special geometry was calculated by means of FEM simulations. This flange allows the transducer to be attached on the wire bonder, not only in longitudinal nodes, but also in radial nodes of the ultrasonic field excited in the horn. This leads to a total decoupling of the transducer to the wire bonder, which has not been achieved so far. The new approach to mount ultrasonic transducers on a welding device is of major importance, not only for wire bonding, but also for all high power ultrasound applications and has been patented     

The design of protection circuitry for high-frequency ultrasound imaging systems

Transmission line lengths in the protection circuitry of a high-frequency (>20-MHz) ultrasound imaging system have an important effect on the frequency, amplitude, and bandwidth of the pulse-echo response of the system. A model that includes the transmission line lengths between the pulser, transducer, and receiver and the electromechanical properties of high-frequency transducers is used to illustrate the importance of correctly choosing these line lengths. An iterative optimization procedure for designing the protection circuitry for a broadband system is proposed. A theoretical and experimental analysis of the validity of this approach is reported for a 45-MHz PVDF transducer.     

Broadband ultrasonic transducers using a LiNbO3 plate with a ferroelectric inversion layer

Some heat treatment of a lithium niobate (LiNbO/sub 3/) plate induces domain inversion, thereby yielding a ferroelectric inversion layer. In such a piezoelectric plate with an inversion layer, even-order thickness-extensional modes, as well as odd-order modes, can be excited piezoelectrically. Therefore, the ultrasonic transducer using such a piezoelectric plate is expected to operate over a wide frequency range. In this paper, it is shown that broadband ultrasonic transducers can be obtained at a certain thickness ratio of inversion layer to plate, and that the transducer characteristics differ depending on whether the inversion layer is on the front side or on the backside. The broadband characteristics are experimentally demonstrated by fabricating transducers with 9 MHz or 75 MHz center frequency using 36/spl deg/ rotated Y-cut LiNbO/sub 3/ plates with a ferroelectric inversion layer.     

Analytical modelling of microstrip-like interconnections in presence of ground plane aperture

High-speed multichip module interconnects are characterised by planar transmission lines. An interconnect line with ground plane aperture is essentially a microstrip line with partially removed ground plane below the line. The authors report the closed-form analytical expressions for line capacitance and characteristic impedance of microstrip interconnect line with a ground plane aperture. The expressions have been obtained using variational analysis combined with transverse transmission line technique. The closedform expressions are general and are obtained for a range of structure parameters and the dielectric constants. Results are compared with finite-difference time-domain simulations and measurements performed on a vector network analyser. The proposed study can find applications in the design of high-speed interconnects for printed circuit boards, radio frequency (RF) and multichip module applications. These are particularly useful where high impedance lines are required.