退火工艺对CaBi4.3Ti4O15铁电薄膜性能影响

利用溶胶凝胶法制备了CaBi4.3Ti4O15 铁电薄膜材料,研究表明,退火工艺对CaBi4.3Ti4O15,铁电薄膜的结构、微观形貌、晶粒取向以及铁电性能影响较大,随着退火温度的提高,晶粒的取向为a轴择优取向,有利于样品的铁电性;气氛对薄膜的电学性能影响也较大,氧气气氛可以很好的抑制氧空位的产生,提高样品的铁电性.在氧气气氛下退火所得到样品的剩余极化强度(2P)和矫顽场(2Ec)分别为21.4μC/cm2和27.7kV/mm,介电常数在250±4%范围内,介电损耗在0.005～0.01之间,测试频率为1～1MHz,显示出较好的频率稳定性.     

直流溅射沉积纳米晶氧化镍薄膜及电化学性能

采用直流溅射并结合热处理工艺制备氧化镍薄膜,利用X射线衍射仪(XRD)、扫描电镜(SEM)、能谱仪(EDX)考察退火温度对薄膜结构、形貌和组成的影响,并通过恒流充放电技术初步考察薄膜的电化学性能.结果表明,在400～500 ℃退火温度下制备了表面光滑、结构致密的NiO薄膜;随着退火温度的升高,薄膜的晶粒尺寸逐渐增大,晶形趋于完整;其中,500 ℃下退火2 h获得的NiO薄膜具有良好的电化学循环稳定性,有望成为高性能的全固态薄膜锂电池阳极材料.     

铁酸铋薄膜的溶胶-凝胶法制备及电性能研究进展

铁酸铋是唯一一种在室温下存在的单相多铁材料,因其具有较高的铁电居里温度、较大的剩余极化强度、较小的禁带宽度和多铁特性,受到国内外的广泛关注。溶胶-凝胶法是制备铁酸铋薄膜的一种常见方法。综述了近年来溶胶-凝胶法制备铁酸铋薄膜的研究进展,详细阐述了制备工艺参数(前驱液、退火温度、退火气氛、底电极)与掺杂对铁酸铋薄膜电性能的影响;分析了不同制备工艺导致薄膜电性能出现差异的原因;归纳、总结出了目前溶胶-凝胶法制备铁酸铋薄膜的较佳工艺条件;最后,指出了亟待解决的问题。     

NaCl基片上制备BiFeO_3模板膜工艺参数探讨

BiFeO_3(BFO)作为一种理想的无铅多铁材料,因其优异的铁电、压电以及铁磁性能,有望在未来的微机电系统中替代Pb(Zr,Ti)O_3而得到广泛的应用。采用溶胶-凝胶法,层层退火工艺,在可溶性NaCl基片上制备出无杂相且结晶较好的BFO模板膜。并对制备BFO模板膜的最佳工艺参数进行了深入探讨:当前躯体溶液浓度为0.3 mol/L,匀胶速度为4000 r/min,退火温度为500℃时,所制备的BFO模板膜无杂相,晶粒大小均匀致密呈球状,平均晶粒尺寸约为40 nm,模板膜厚度为80μm左右。     

MgO基外延BiFeO3薄膜的结构和铁电光伏性能

目的 深入研究BiFeO3(BFO)薄膜的结晶结构、生长取向及测试温度对其介电和铁电光伏性能的影响。方法 采用偏轴磁控溅射法,分别以单晶(001)MgO基片和外延La0.5Sr0.5CoO3(LSCO)薄膜作为衬底与底电极,构架Pt/BFO/LSCO/MgO异质结构的铁电电容器。采用XRD衍射仪表征LSCO和BFO薄膜的结构与生长取向,探究Pt/BFO/LSCO/MgO异质结构电容器的介电和铁电光伏性能,重点研究测试温度对其性能的综合影响。结果 X射线衍射(XRD)和Phi扫描结果表明,MgO基BFO与LSCO薄膜均为结晶良好的钙钛矿结构,且满足(00l)取向的外延生长。不同电压和频率下的介电测试表明,BFO铁电薄膜具有较强的铁电性,正负矫顽电压分别为3.36、–1.12 V,但存在明显的介电色散现象,呈现先减小、后增大的趋势。在~100 kHz时,介电损耗最小,为0.016;在8 MHz时,增加到了0.212。这主要由于不同频率下各种类型电荷的弛豫竞争机制所致。光伏性能测试表明,在室温(20 ℃)、光强250 mW/cm²紫光垂直照射下,开路电压(VOC)和短路电流(JSC)分别为0.32 V和0.21 mA/cm²。进一步提高测试温度(分别为40、60、80、100 ℃)发现,BFO铁电薄膜VOC呈先缓慢、后快速减小,而JSC呈先快速上升、后下降的趋势,并在临界温度80 ℃处展现了更快的光伏响应速度,VOC和JSC分别为0.30 V和0.96 mA/cm²。能带分析表明,底电极LSCO与上电极Pt间大的功函数差(~1 eV)使得BFO薄膜中存在较强的内建电场,这有利于分离光生载流子,从而极大提高了BFO薄膜的铁电光伏效应。结论 BFO是一种具有重要潜在应用价值的优良环保光伏候选材料,提供了一种提高BFO铁电光伏器件性能的切实可行策略。     

退火对栅介质SrHfON薄膜性能的影响

采用射频磁控溅射法在Si衬底上制备新型栅介质SrHfON薄膜。采用X射线衍射(XRD)仪、高分辨透射电镜(HRTEM)和X射线光电子谱(XPS)分析退火对SrHfON薄膜的界面形态、薄膜的结构和电学性能的影响。结果表明,SrHfON薄膜经900℃退火后仍保持非晶态,表现出良好的热稳定性。SrHfON薄膜与Si衬底的界面主要由HfSixOy和SiO2组成。以SrHfON薄膜为栅介质的MOS电容结构具有较小的漏电流密度,并且漏电流密度随着退火温度的升高而减小。在外加偏压(Vg)为+1V时样品在沉积态和900℃退火后的漏电流密度分别为4.3×10-6和1.2×10-7A/cm2。研究表明,SrHfON薄膜是一种很有希望替代SiO2的新型栅介质材料。     

封闭NH_3气氛热处理制备二氧化钒热致变色薄膜（英文）

采用聚合物凝胶法和封闭NH3气氛热处理(防止VO_2被氧化成V2O5)在石英玻璃衬底上制备了VO_2热致变色薄膜。XRD分析、拉曼分析、FESEM形貌和光学性能结果表明:退火温度对VO_2薄膜的微观结构起关键影响作用。随着温度从450°C升高到550°C,薄膜中晶粒生长,晶粒尺寸增加,晶界增多。温度过高时(550°C),晶粒尺寸较大且不连续,导致热调节性能下降。该实验的最优退火温度为500°C(?T_(sol)=10.4%,T_(lum)约29.0%)。     

ZrW2O8薄膜的制备及热膨胀性质

采用溶胶-凝胶技术结合退火工艺在Pt(111)/Ti/SiO2/Si(100)基片上制备ZrW2O8薄膜,并研究了退火温度、退火时间对薄膜的影响.利用X射线衍射(XRD)及扫描电镜(SEM)对薄膜的物相及表面形貌进行表征;利用变温XRD研究薄膜的热膨胀性能.薄膜的变温XRD结果表明,在室温～700℃温度范围内,随着温度的升高,(211)和(310)晶面间距变小,其热膨胀系数为负值,而(332)晶面间距随温度升高变大,显示出正膨胀性质.这表明ZrW2O8薄膜材料的热膨胀性能是各向异性的.     

溶胶-凝胶法制备的ZnO:Al薄膜的微观结构及光学、电学性能

采用溶胶-凝胶法制备了ZnO:Al(AZO)透明导电薄膜．通过X射线衍射(XRD)、紫外-可见分光光度计 (UV-Vis)、扫描电镜(SEM)和电阻测量装置,考察了Al掺杂量、退火温度及镀膜层数等工艺参数对薄膜的微观结构和光电性能的影响．结果表明,退火温度越高,多晶AZO薄膜的(001)晶面择优取向生长的趋势越强,并且随退火温度升高,薄膜的晶粒尺寸增大,透光率增加．薄膜晶体结构为纯ZnO的六角纤锌矿结构．在掺杂浓度1％(摩尔分数)、退火温度500℃及镀膜层数10的条件下,得到了电阻率为3．2×10-3Ω·cm、可见光区的平均透射率超过90％的AZO薄膜．     

Ba_(0.8)Sr_(0.2)TiO_3薄膜的溶胶-凝胶法制备及表征

采用溶胶-凝胶法在Si和Pt/Ti/SiO2/Si衬底上制备钙钛矿结构的Ba0.8Sr0.2TiO3(BST)薄膜。对其前驱体干凝胶进行热重与差热(TG-DSC)分析,以此确定薄膜的热处理工艺。分别采用X射线衍射(XRD)、扫描电子显微镜(SEM)、原子力显微镜(AFM)和B1500A半导体器件分析仪对薄膜性能进行表征。结果表明:800℃下在氧气气氛中退火15 min可以得到结晶度良好、致密度较高的纯钙钛矿相BST薄膜,其对应的晶粒尺寸和均方根粗糙度分别为30~40 nm和5.80 nm。薄膜厚度为160~378 nm时,BST薄膜的介电常数和介质损耗随薄膜厚度的增加而增大。厚度为300 nm的BST薄膜的介电常数由于尺寸效应随温度升高单调降低,且居里温度在室温以下。     

Multiferroic Consequence of Porous (BiFeO_3)_x–(BiCrO_3)_(1-x) Composite Thin Films by Novel Sol–Gel Method

In this work, we have presented a spin-coating method to produce thin films started with pure BiCrO_3(BCO) and ended up with BiFeO_3(BFO) by increasing x values in the(BiFeO_3)_x–(BiCrO_3)_(1-x)composites. All the produced thin films have been crystallized at the annealing temperatures of 400 °C for 0.5 h. The XRD and EDAX spectrums give insight that the two crystal phases related to BCO and BFO stayed together within the thin film matrices. SEM analysis showed that the prepared composite had macroporous morphology with interconnected pores and its width(size) decreased with increasing x values. The strong correlations are observed among the microstructure, dielectric, ferroelectric, ferromagnetic properties and Fe concentration. Among all composites, the composition of 0.75 shows an attractive magnetization, polarization, switching and improved dielectric behaviors at room temperature. Significant increase in the multiferroic characteristics of 0.75 composition is due to arise of lower leakage current by causing reduction in oxygen vacancy density, and enhancement of super-exchange magnetic interaction between Fe~(3+) and Cr~(3+) at BFO/BCO interface layers. Our result shows that the thin layer on Pt(111)/Ti/SiO_2/Si substrate possesses simultaneously improved ferroelectric and ferromagnetic properties which make an inaccessible potential application for nonvolatile ferroelectric memories.     

BiFeO3 多铁薄膜掺杂改性研究进展

铁酸铋是目前发现的唯一的室温单相多铁性的材料,其禁带宽度较小,剩余极化强度较大,居里温度较高,在光电器件、自旋电子器件、铁电随机存储器、磁电存储单元等领域有着广阔的应用前景。但铁酸铋薄膜存在漏电流较大、磁电耦合性较弱等问题,制约了在实际中的应用。离子掺杂具有操作方便、易于实现薄膜的微结构及性能调控等优点,因而受到广泛关注。综述了国内外近年来关于铁酸铋薄膜电性能掺杂改性的相关工作,阐述了不同种类的掺杂,包括A位(三价镧系元素与二价碱金属元素)、B位(过渡金属元素等)以及AB位共掺杂,同时根据掺杂对铁酸铋薄膜的漏电流、铁电性以及介电性能的影响,对A位掺杂和B位掺杂中的元素进行了分类,系统总结了各类元素掺杂改性的效果及其机理。最后,提出了铁酸铋薄膜亟待解决的问题。     

THE STABILITY INVESTIGATION OF FERROELECTRIC SrBi_2Ta_2O_9 THIN FILMS ANNEALED IN FORMING GAS

The hysteresis loop changes of ferroelecric SrBi2Ti2O9 (SBT) thin films (330nm) vs the temperature of forming gas (5% hydrogen 95% nitrogen) annealing were measured when the annealing time was 1min and 10min. The selected annealing temperature was at 100℃, 200℃, 250℃, 300℃, 350℃, 400℃ and 450℃, respectively. Our results showed that the ferroelectric properties were easily destroyed and the leakage current changed abruptly when the SBT thin films were in their ferroelectric phase (<270℃). The space charges at the grain boundary may take an important role in absorption polarity molecular hydrogen when the SBT thin films were in the ferroelectric phase. The oxygen recovery experiments were also performed and investigated in this work.     

FERROELECTRIC CHARACTERISTICS OF SrBi2Ta2O9 THIN FILMS ANNEALED IN FORMING GAS

1. IlltroductionRecently, SrBi2Ta2O9 (SBT) thin films had been attracting considerable attention forapplication to nonvolatile ferroelectric random access memory (FeRAM). It had been re-ported that SBT thin films had superior properties of free--fatigue and Iow leakage currentllJ.However, it was a serious problem that fOrming gas (5%H2+95%N2) annealing could causethe severe degradation of SBT thin films in ferroelectric polarization. It had been suggestedthat the origin of H2 damage …     

掺杂对铁酸铋薄膜漏电流及铁电性的影响

铁酸铋是目前最为重要的室温单相多铁性材料,其禁带宽度较小,具有较大的剩余极化强度与较高的铁电居里温度,在铁电随机存储器、光电器件等领域有着极佳的应用前景。但铁酸铋薄膜因Bi3+挥发和Fe3+的部分还原,易产生较大漏电流而制约了其实际应用。对铁酸铋薄膜进行掺杂,是改善其电性能的一种有效手段。围绕如何通过铁酸铋薄膜A位和B位掺杂来减少Bi3+挥发和抑制Fe3+还原,从引入掺杂离子后发生的缺陷反应和微结构变化等方面,对国内外近年来关于铁酸铋薄膜电性能掺杂改性的系列工作进行综述。阐述了A位镧系和碱土金属离子、B位过渡金属离子、A/B位离子共掺对铁酸铋薄膜微结构、漏电流及铁电性等方面的改性研究进展。对改性效果进行了比较,并从缺陷反应、薄膜晶体结构和表面形貌等方面对改性机理进行了详细介绍。此外,还提出了亟待解决的问题。     

Mn掺杂对0.7BiFeO3-0.3PbTiO3薄膜铁电性能的影响

利用溶胶-凝胶法在La Ni O3/Si O2/Si衬底上制备了掺Mn量为0%、1%、5%、10%(质量分数)的0.7Bi Fe O3-0.3Pb Ti O3(BFMPT7030/x,x=0,0.01,0.05,0.1)薄膜。XRD测试表明,薄膜均完全结晶,呈现高度(100)择优取向。通过对薄膜晶体结构分析,发现BFMPT7030/0.05薄膜具有最小的晶粒尺寸(258 nm)及最小的晶胞体积(61.25×10-3 nm3)。SEM测试结果显示样品晶粒生长充分,晶粒尺寸在150~300 nm之间。铁电性能测试结果表明,当Mn含量为5%时,铁电性能较好,电滞回线形状最好,最为饱和。漏电流测试结果表明随着掺Mn量增加,BFMPT7030薄膜的漏电流随电场增大而增加的趋势减弱。     

Ferroelectric properties of dysprosium-doped Bi4Ti3O12 thin films crystallized in various atmospheres

Dysprosium-doped Bi4Ti3O12 （Bi3.4Dy0.6Ti3O12, BDT） ferroelectric thin films were deposited on Pt（111）/Ti/SiO2/Si（111） substrates by chemical solution deposition （CSD） and crystallized in nitrogen, air and oxygen atmospheres, respectively. X-ray diffraction （XRD） and scanning electron microscopy （SEM） were used to identify the crystal structure, the surface and cross-section morphology of the deposited ferroelectric films. The results show that the crystallization atmosphere has significant effect on determining the crystallization and ferroelectric properties of the BDT films. The film crystallized in nitrogen at a relatively low temperature of 650 ℃, exhibits excellent crystallinity and ferroelectricity with a remanent polarization of 2Pr = 24.9 ℃/cm^2 and a coercive field of 144.5 kV/cm. While the films annealed in air and oxygen at 650 ℃ do not show good crystallinity and ferroelectricity until they are annealed at 700 ℃. The structure evolution and ferroelectric properties of BDT thin films annealed under different temperatures （600-750 ℃） were also investigated. The crystallinity of the BDT films is improved and the average grain size increases when the annealing temperature increases from 600 ℃ to 750 ℃ at an interval of 50 ℃. However, the polarization of the films is not monotonous function of the annealing temperature.     

BiFeO3 thin films of (1 1 1)-orientation deposited on SrRuO3 buffered Pt/TiO2/SiO2/Si(1 0 0) substrates

BiFeO₃ (BFO) thin films of varying degrees of (1 1 1) orientation were successfully grown on SrRuO₃-buffered Pt/TiO₂/SiO₂/Si(1 0 0) substrates by off-axis radio-frequency magnetron sputtering. They demonstrate much enhanced ferroelectric behavior, including a much enhanced remnant polarization (2P_r ～ 197.1 μC cm^?2 at 1 kHz) measured by positive-up negative-down (PUND), at an optimized deposition temperature of 590 °C. The effects of film deposition temperature on the degree of (1 1 1) orientation, film texture, ferroelectric behavior, leakage current and fatigue endurance of the BFO thin films were systematically investigated. While the degree of (1 1 1) orientation is optimized at 590 °C, the defect concentration in the film increases steadily with increasing deposition temperature, as demonstrated by the dependence of leakage behavior on the deposition temperature. The polarization behavior is shown to strongly depend on the degree of (1 1 1) orientation for the BFO thin film. Oxygen vacancies are shown to involve in the conduction and dielectric relaxation of the BFO thin films deposited at different temperatures, as demonstrated by their dielectric and conduction behavior as a function of both temperature (in the range 294–514 K) and frequency (in the range 10^?1–10⁶ Hz).     

多铁/顺磁复合薄膜的界面输运特性与耦合机制研究

本文通过BiFeO3/La2/3Sr1/3MnO3（BFO /LSMO）,研究了多铁/顺磁复合结构的界面输运以及磁电耦合机制。利用激光分子束外延技术制备了单相、质量良好的薄膜结构,采用电学、磁学、光学等多种测试手段对其输运特性、铁磁性、磁介电特性等进行了测试与表征.结果表明界面的漏电导机制是空间电荷限制电流机制;复合薄膜在室温下表现出的铁磁性主要来源于BFO层,界面处诱导出的网状磁矩会使样品产生比较明显的磁电耦合.在零场冷却（ZFC）和场冷却（FC）下,样品的磁介电系数分别在160K和170K达到极大值,介电损耗-温度曲线在150-170附近产生分裂,该温度区间与BFO层的相变相关.