共查询到19条相似文献,搜索用时 93 毫秒
1.
2.
高密度高导电性ITO靶研制 总被引:3,自引:0,他引:3
采用化学共沉淀法掺金属Nb,Ta和P到ITO材料中可使ITO(IndiumTinOxide)靶相对密度达到97%~99%,并且靶电阻率小于3.0×10-4??cm,其质量损失率小于4.0%。采用直接掺杂法将TiO2纳米粉末掺入到纳米ITO粉末中可使ITO靶相对密度达到95%以上。当烧结温度为l500℃时,掺Nb,Ta,P的ITO靶电阻率稍小于纯ITO靶的电阻率。 相似文献
3.
研究采用均相共沉淀法制备纳米ITO(Indium Tin Oxide)粉末的制备工艺参数,从碱式溶度积平衡和酸式溶度积平衡,根据热力学平衡理论并引入化学反应热容参数分别计算了ITO前驱物In(OH)3和Sn(OH)4开始沉淀和沉淀完全的pH值以及其开始溶解和溶解完全的pH值,给出了这些pH值随沉淀温度的变化规律,由此对工艺参数进行了优化设计并提供了一种有效的材料掺杂新工艺.采用高分辨率透射电镜,扫描电镜,X射线衍射对ITO纳米粉末进行了测量.结果表明,ITO粉末的平均晶粒大小为28 nm,而且沿(400)面生长. 相似文献
4.
简介了化学共沉淀法制备纳米ITO(铟锡氧化物)陶瓷粉末的工艺,概述了制备过程中离子浓度、pH值以及煅烧温度等不同因素对产物性质的影响,并对其发展趋势进行了展望. 相似文献
5.
6.
采用喷雾热解和共沉淀工艺分别制备了Bi2Sr2CaCu2O8+δ (Bi-2212)前驱粉末,研究了Bi-2212前驱粉的中间相演化过程。与共沉淀工艺相比较,喷雾热解工艺提高了前驱粉末中Bi-2212晶粒的相转变效率;而且喷雾热解后粉末中残留的硝酸盐对Bi-2212晶粒的生长影响较小,共沉淀后粉末中残留碳酸盐会阻碍Bi-2212晶粒的形成。采用喷雾热解法制备的Bi-2212线材的性能与采用传统共沉淀工艺法制备的线材性能相近,但喷雾热解工艺的制备效率更高。因此,采用喷雾热解制备前驱粉末有助于实现Bi-2212线材的大规模生产。 相似文献
7.
热处理对制备纳米氧化铟锡(ITO)粉末的影响 总被引:9,自引:0,他引:9
以共沸蒸馏工艺辅助的共沉淀法制备了纳米氧化铟-氧化锡(ITO)粉体,研究了不同热处理温度对制备粉体的影响,结果表明,随着热处理温度的提高,粉体发生从四方结构向体心立方结构转变,晶粒出现长大现象,比表面积变化明显,化学组分保持高纯状态,综合比较,在700~800℃进行热处理可以得到尺寸均匀,晶形完整的纳米级粉体。 相似文献
8.
9.
10.
采用单相的ITO复合粉末经放电等离子烧结法(SPS)快速制备了ITO靶材.研究了SPS的主要工艺参数对ITO靶材致密化的影响.结果表明:靶材的相对密度随着烧结温度的升高而增大,在1000 ℃时达到最大值;在1000 ℃下烧结,延长保温时间使相对密度降低;在较低的温度下烧结时,延长保温时间有利于提高靶材的致密度;相对密度随着烧结压力的增加而增大;升温速率过快不利于靶材的致密化.对烧结试样的相组成和化学成分研究表明:不同温度下制备的ITO靶材均有少量的SnO_2相析出,并有不同程度的失氧,铟锡的质量分数略大于ITO原粉中铟锡的质量分数. 相似文献
11.
采用化学共沉淀法制备ITO粉体前驱物,在600℃煅烧粉体前驱物4h,得到粒径为20~30nm的ITO粉体。添加1%的聚乙烯醇(PVA)造粒,模压成型制备ITO靶材素坯,设置不同的升温速率,在1550℃氧气氛下烧结素坯,得到ITO靶材。研究了烧结过程升温速率对ITO靶材密度和微观组织的影响。结果表明,在低温阶段(0~500℃)升温速率为3℃/min,高温阶段(500~1550℃)升温速率为8℃/min时,ITO靶材相对密度为99.58%,孔洞极少,近乎完全致密,且靶材宏观上无裂纹。 相似文献
12.
LIU Jiaxiang GAN Yong ZENG Shengnan 《稀有金属(英文版)》2005,24(3):277-282
Indium tin oxide (ITO) nano-particles were prepared directly using waste ITO target, which had been coated by magnetron controlled sputtering. The waste ITO target was cleaned with de-ionized water, and then dissolved in acid, filtrated, neutralized, manipulated through azeotropic distillation and finally dried, and in this way the precursor of indium tin hydroxide was obtained. The nanosized rio composite powder was prepared after the precursor heat-treated at 500℃ for 2 h. TEM images show a narrow distribution of particle size is 5-20 nm and the particle size can be controlled. Its granule has a spherical shape and the dispersion of the particle is well. X-ray diffraction (XRD) patterns indicate the only cubic In2O3 phase in the ITO powder hot-treated at 500℃. The purity of ITO composite powder is 99.9907%. The content of radium within filtrate was detected by using the EDTA titration of determination of indium in the ITO powder and ITO target. Appropriate amount of SnCl4.5H2O was dissolved in the filtrate, and then ITO powder containing 10 wt.% SnO2 was successfully prepared by heat-treating. 相似文献
13.
采用化学共沉淀法制备ITO前驱物,分别于600及1000℃下热处理前驱物,得到两种ITO粉体.粉体模压成型得到素坯,在400~1550℃内采用烧结法、氧气氛下烧结素坯制备出ITO靶材.对粉体及靶材进行表征和分析,研究了烧结过程中晶粒生长情况、靶材微结构与温度之间关系及靶材的失氧现象.得出600℃粉体为单相ITO固溶体、粒径为15 nm,1000℃粉体有少量SnO2析出、粒径为28 nm且其分散性和晶化程度优于600℃的粉体.两种粉体烧结制备靶材过程符合Coble固相烧结理论,1550℃时晶体出现类似二维成核生长方式的生长台阶.靶材密度随温度升高而增加,1550℃时随保温时间延长而增加.靶材致密化过程由团聚程度及团聚体大小决定,1000℃粉体制备的靶材密度高于600℃粉体所制靶材.两类靶材含氧量均低于理论值,1000℃粉体所制靶材含氧量高于600℃的含氧量. 相似文献
14.
Characterizations were performed for ITO films deposited using different erosion ratios for the target surface and different
conductivity targets. The ITO films were deposited on unheated substrates using de magnetron sputtering with different conductive
targets, and then the films were post-annealed in a H2 atmosphere in a vacuum chamber. By increasing the target erosion ratio, the optimal O2 addition ratio to obtain the lowest resistivity was decreased. For the post-annealed films, the resistivity of the ITO films
consistently deceased with an increasing Ta, which can be attributed to the increase of the carrier density. By increasing the target erosion ratio, the XRD patterns
of the post-annealed ITO films showed a higher peak intensity on the (222) plane than that on the (400) plane, implying that
the oxidation of the ITO films was enhanced. 相似文献
15.
16.
在磁控溅射过程中,通过观察在2~50 h的刻蚀时间下制备的ITO薄膜的表面形貌,研究了在磁控溅射过程中ITO靶表面的黑色凸起的形成过程,并探讨了刻蚀时间对沉积ITO薄膜的光电性能的影响。结果表明,随着刻蚀时间的增长,ITO靶材表面的In和Sn分布发生变化,导致ITO膜不均匀。薄膜的电学和光学性能因结节的形成而显著退化。而当刻蚀时间在40 h以下时,ITO薄膜的光电性能变化不大。然而,当蚀刻时间继续延长,薄膜的光电性能会迅速恶化。 相似文献
17.
Comparing Microstructures of ITO Sputtering Targets Prepared by Tin Doped Indium Oxide Powders and In2O3- SnO2 Mixed Powders 总被引:1,自引:0,他引:1
磁控溅射ITO靶材制备ITO透明导电薄膜作为平板显示、太阳能电池、气敏元件等电子器件的电极材料,需要ITO靶材具有高纯度、高均匀性、高密度、高导电性的特点。对比研究了ITO共沉淀粉与In2O3、SnO2单体混合粉同炉烧结ITO靶材的微观组织结构差异,如:晶粒尺寸分布、晶粒形貌、元素分布、烧结速率等。结果表明:单体混合粉的烧结速率要比共沉淀粉的烧结速率高,但是前者烧结ITO靶材的微观组织结构不及后者烧结的均匀性好。对比而言,共沉淀粉更容易获得结构组织均匀的ITO靶材,但前提是要合理的设计烧结工艺抑制烧结过程中In2O3的分解。研究结果将会对提高ITO靶材微观组织均匀性和减少靶材毒化,进而提高靶材生产效率提供有益的参考 相似文献
18.
Effects of heat treatment on morphological, optical and electrical properties of ITO films by sol-gel technique 总被引:1,自引:0,他引:1
Indium-tin-oxide(ITO) films were prepared on the quarts glass by sol-gel technique. Effects of different heat treatment temperatures and cooling methods on the morphological, optical and electrical properties of ITO films were measured by TG/DTA, IR, XRD, SEM, UV-VIS spectrometer and four-probe apparatus. It is found that the crystallized ITO films exhibit a polycrystalline cubic bixbyite structure. The heat treatment process has significant effects on the morphological, optical and electrical properties of ITO films. Elevating the heat treatment temperature can perfect the crystallization process of ITO films, therefore the optical and electrical properties of ITO films are improved. But the further increasing of heat treatment temperature results in the increment of ITO films' resistivity. Compared with ITO films elaborated by furnace cooling, those prepared through air cooling have following characteristics as obviously decreased crystalline size, deeply declined porosity, more compact micro-morphology, improved electrical property and slightly decreased optical transmission. 相似文献
19.
采用XRD、XPS对ITO固溶烧结前后物相结构及靶材表面In、Sn、O三元素价态进行表征和研究。结果发现:ITO固溶体中溶质与溶剂离子的半径差异较大是引发掺杂后XRD图谱谱峰偏移的主要原因;而XPS图谱中谱峰偏移则是Sn掺杂导致ITO导带中电子态占有率增加、Fermi能级升高的缘故。研究结果为制备成分、结构均匀的高密度ITO靶材提供了有益的参考。 相似文献