采用WC过渡层增加金刚石薄膜附着力的研究

在微波等离子体化学气相沉积装置中，以WC-8％Co为基体，采用氢等离子体脱碳、磁控溅射镀W、碳化等方法，制备了微晶WC过渡层。研究了金刚石薄膜与基体的附着力。结果表明，表面脱碳后再镀W膜，W填充了氢等离子体脱碳时刀具表面因钴蒸发而留下的空洞，形成过渡层，在随后的碳化中和基体WC连接较为紧密，能增加金刚石薄膜与基体附着力，克服单纯的氢等离子体脱碳还原法降低刀具基体硬度、不能完全消除钴的有害影响的缺点。     

文摘辑要

纳米二氧化钛薄膜的制备及特性研究 纳米二氧化钛薄膜由于具有优良的光催化活性而受到人们的重视。本文采用阳极电沉积的方法在ITO基体上制备二氧化钛纳米薄膜。研究了阳极电流密度和沉积时间对纳米二氧化钛薄膜结构和附着力的影响,利用扫描电子显微技术和X射线衍射技术     

橡胶表面粗糙度对DLC薄膜摩擦学性能的影响

目的 探究三元乙丙橡胶(EPDM)表面粗糙度对DLC薄膜和Cr/DLC的微观结构、附着力、摩擦学性能的影响,并阐明Cr中间层对橡胶表面DLC薄膜的作用。方法 使用砂纸打磨EPDM橡胶得到不同的表面粗糙度。采用非平衡磁控溅射技术在不同粗糙度的橡胶基体表面沉积无中间层的类金刚石碳基薄膜(DLC)及有Cr中间层的类金刚石碳基薄膜(Cr/DLC)。使用二维轮廓仪获得基体及薄膜的表面粗糙度,通过扫描电子显微镜以及拉曼光谱对薄膜的表面形貌和结构成分进行分析,并采用X切割试验和摩擦磨损试验分别评估DLC薄膜的附着力和摩擦学性能。结果 基体表面粗糙度对薄膜的微观结构没有显著影响,但却对薄膜附着力以及摩擦学性能有较大的影响。薄膜附着力随着基体粗糙度的增加呈现先增大后减小的趋势,当基体表面粗糙度为1 100 nm时,DLC薄膜具有最强的附着力和最佳的摩擦学性能。此外,Cr中间层的引入对提高薄膜附着力和承载能力起到了积极的作用。结论 适当增加基体表面粗糙度可以增强DLC薄膜的附着力,改善薄膜的摩擦学性能。Cr中间层可以提高薄膜的承载能力,从而提高薄膜的耐磨性。     

去Co深度及薄膜厚度对金刚石薄膜-硬质合金附着力的影响

金刚石薄膜与基体的附着力是影响CVD金刚石薄膜涂层刀具使用寿命的关键因素,沉积金刚石薄膜的膜-基附着力主要受硬质合金基体表面Co含量的影响。本文通过控制酸碱两步法中的酸处理时间及薄膜沉积时间,利用扫描电子显微镜、能谱仪、拉曼光谱仪、划痕测试仪等对样品进行分析检测,研究基体去Co深度及薄膜沉积厚度对金刚石薄膜的膜-基附着力的影响。结果表明:随着去Co深度的增加,膜-基附着力先增后降,但薄膜表面和截面形貌无明显变化,表明薄膜形貌主要受沉积参数影响;随着薄膜厚度增加,薄膜晶粒变大,膜-基附着力先增高后降低。去Co深度为7.1μm,薄膜厚度为19.5μm时所得薄膜的膜-基附着力最高,达到88.82 N。     

钛过渡层与硬质合金基体表面结合状况对金刚石薄膜附着力的影响

以WC-6％Co为基体，采用磁控溅射法，在原始试样、酸腐蚀试样以及酸蚀后进行氢等离子体脱碳处理的试样上制备Ti过渡层，然后碳化过渡层为TiC。在热丝化学气相沉积装置中，制备金刚石薄膜。研究三种不同试样上的金刚石薄膜与基体的附着力。结果表明，在原始试样上的金刚石薄膜在冷却过程中自动脱落；在经等离子体处理后的试样上，金刚石薄膜与基体间附着力高于在经酸蚀处理的试样上的金刚石薄膜与基体附着力。造成这种现象的主要原因可能是等离子体脱碳还原处理降低WC晶粒表面能，增强Ti与WC间的结合强度，导致TiC过渡层与WC基体结合强度增加，从而增加金刚石薄膜附着力。     

Scratch Behavior, Microstructure, Resistivity and Optical Properties of Indium Tin Oxide Film Grown at Low Deposition Temperature

通过RF磁控溅射技术制备不同溅射气压下的ITO薄膜,对其电阻率、光学透过率、XRD图、AFM图和划擦行为进行了研究。薄膜和基板的附着力通过划擦测试进行表征,重点研究了薄膜划擦测试的不同阶段的特征。研究表明随着Ar溅射气压的下降,薄膜附着力下降。而且,ITO薄膜的表面形貌和电阻率强烈的依赖于Ar气压。低温沉积ITO薄膜均为非晶态,在溅射气压0.8 Pa时得到电阻率(1.25×10-3 Ω×cm)和高可见光透过率薄膜(90%)。研究结果表明该薄膜光学禁带约为3.85 eV,电阻率主要受载流子浓度控制,受溅射气压的变化影响有限。     

介质表面上镀制强附着力电极薄膜的方法

一种介质表面上镀制强附着力电极薄膜的方法，在介质表面上镀制铜的电极薄膜，首先在介质表面与铜的焊接层之间镀上一层金属铬或镍或钛的第一过渡层，在第一过渡层与电极焊接层之间镀上一层由第一过渡层的金属与铜混合的材料是铬加铜，或镍加铜，或钛加铜的第二过渡层。镀制的电极薄膜具有强的附着力，抗拉性强，抗骤冷热性强，焊接引线难度小。     

低温沉积ITO薄膜划擦行为、微结构、电学和光学性能的研究（英文）

通过RF磁控溅射技术制备不同溅射气压下的ITO薄膜,对其电阻率、光学透过率、XRD图、AFM图和划擦行为进行了研究。薄膜和基板的附着力通过划擦测试进行表征,重点研究了薄膜划擦测试的不同阶段的特征。研究表明随着Ar溅射气压的下降,薄膜附着力下降。而且,ITO薄膜的表面形貌和电阻率强烈的依赖于Ar气压。低温沉积ITO薄膜均为非晶态,在溅射气压0.8 Pa时得到电阻率(1.25×10~(-3)Ω·cm)和高可见光透过率薄膜(90%)。研究结果表明该薄膜光学禁带约为3.85 eV,电阻率主要受载流子浓度控制,受溅射气压的变化影响有限。     

射频磁控溅射沉积ITO薄膜性能及导电机理

将In2O3和SnO2粉末按质量比1：1热压烧结制成靶材，采用射频磁控溅射制备了高性能的ITO薄膜。实验结果表明：氩气压强对薄膜的电阻率、可见光透射率TVITL有着重要的影响，其最佳值为0．2Pa。ITO膜的方阻、TVIL和颜色与膜厚有着密切的关系。提高基体温度ts可以改善薄膜的性能，在ts为200℃时，ITO薄膜的1k达到90％以上（含玻璃基体），方阻为13．1Ω／□。根据薄膜生长的3个阶段理论，建立了薄膜厚度与电阻率的关系：在ITO薄膜生长过程中，依次出现热发射和隧道效应、逾漏机制以及Cottey模型导电机理。由实验结果求得了临界厚度吐约为48-54nm，AFM表征结果进一步表明ITO薄膜随着厚度增加表现出不同的导电机理和尺寸效应。     

提高CVD金刚石涂层刀具附着力的应用研究

介绍了影响CVD金刚石涂层刀具附着力的因素,并重点对提高其附着力的工艺措施进行了较深入的研究,对解决刀具基体与金刚石薄膜之间的附着力过小问题有一定的指导意义.     

Preparation and characteristics of indium tin oxide (ITO) thin films at low temperature by r.f. magnetron sputtering

Low resistivity and highly transparent ITO conducting films for solar cell applications were fabricated at low temperature by r.f. Magnetron sputtering. ITO films were deposited on glass and silicon substrate. Electrical, optical, structural and morphological properties of the ITO films were investigated in terms of the preparation conditions. The annealing treatment has improved the properties of the ITO films at different degree. The maximum transmittance of the obtained ITO films in the visible range is over 92%, and the low resistivity for the ITO films are about 3.85×10-4Ω·cm at 80℃, 80 W after annealing.     

Study on adhesion and electro-optical properties of ITO films on flexible PET substrate

High-quality ITO films on flexible PET substrate were prepared by RF magnetron sputtering at low deposition temperature with different Ar gas sputtering pressure.Adhesion and electro-optical properties of ITO films were investigated as a function of Ar partial pressure.The sputtering conditions provide very uniform ITO films with high transparency (＞85% in 400-760 nm spectra) and low electrical resistivity (1.408×10-3-1.956×10-3 Ω·cm).Scratch test experiments indicate that there is a good adhesion property between ITO films and PET substrate, the critical characteristic load increases from 16.5 to 23.2 N with increasing Ar sputtering pressure from 0.2 to 1.4 Pa.     

X-ray diffraction investigations of well-ordered sexithiophene films deposited on flexible substrates

Through optimizing deposition conditions such as substrate temperature and growth rate, well-ordered sexithiophene films were deposited on flexible substrates of insulating polyvinylpyrrolidone (PVP) and transparent conductive indium tin oxide (ITO). X-ray diffraction investigation showed that well-ordered sexithiophene films were deposited at substrate temperature of 90 °C and growth rate of 10 nm/min on PVP substrate with the main axis of sexithiophene molecules oriented parallel to the PVP surface and the crystallinity was declined with the decrease of substrate temperature. On ITO substrate, substrate temperature notably influenced the sexithiophene molecule orientation. There existed an inclined angle between the main axis of sexithiophene molecules and the ITO surface in the film deposited at room temperature. With the increase of substrate temperature, the main axis tended to parallel to the ITO surface and well-ordered sexithiophene film was deposited at 50 °C and 10 nm/min. Too slow or too rapid growth rate would lead to poor crystallinity of sexithiophene films on both PVP and ITO substrates.     

Characteristics of ITO films deposited on a PET substrate under various deposition conditions

ITO films, with a thickness of 150 nm to 160 nm, were deposited on an unheated hard coated PET substrate or non-alkali glass substrate via dc magnetron sputtering. Depositions were carried out under the following various conditions: total gas pressure (P_tot), dc sputtering power, target — substrate (T-S) distance, and O₂ or H₂ addition ratio. The ITO coated on the PET substrate showed relatively lower resistivity than that of the ITO coated on a glass substrate. Relatively small changes in the resistance (ΔR/R₀=0.4) of the films were obtained for each deposition condition for the ITO/PET deposited under a sputtering power of 70 W, P_tot of 0.5 Pa, and T-S of 50 mm. It has been confirmed that the results of the electrical property showed concurrence with the results of the bending test. Specifically, the films that have a good electrical property showed only a small change in resistance to the increasing cycle number for each deposition condition. Therefore, it can be assumed that the increased resistance of the ITO films could be due to the formation of micro defects such as micro-cracks and the micro detachment of the ITO film from the flexible PET substrate.     

Low temperature processing of high conductivity and high transparency indium–tin-oxide/Ag alloy/indium–tin-oxide multilayered thin films

Indium–tin-oxide (ITO) thin films and ITO/Ag alloy/ITO multilayered thin films were deposited on glass substrates using a vertical in-line multilayer sputtering system. Ceramic ITO targets were used for the deposition of ITO layers at low substrate temperature of 100 °C. It was observed that the sheet resistance and light transmission of ITO films were affected by the oxygen pressure significantly. The ITO/Ag alloy/ITO multilayered thin films made in the present work had a low sheet resistance (6.9 Ω/□) and a high transmission (87.1%) at 550 nm. Atomic force microscopy (AFM) investigation showed that through selecting proper processing parameters, the surface roughness could be significantly reduced. The surfaces of ITO films were found very smooth by using pulsed-direct current (pulsed-dc) sputtering with introduction of H₂O. The work functions of the ITO films and ITO/Ag alloy/ITO multilayered films were increased with oxygen plasma treatment.     

Preparation of ITO transparent conductive film by sol-gel method

1Introduction Indium tin oxide(ITO)films are widely used as transparent conductive layers in a large variety of applications such as thin film transistor(TFT)[1,2],liquid crystal displayers(LCD)[3,4],smart mirrors for the windows,solar cells,electrolumine…     

铝基离子镀氮化物膜的研究

探讨了在铝及铝合金基体上离子镀ＴｉＮ薄膜的可行性,研究了各工艺因素和掺入微量Ｃｒ,Ｆｅ对ＴｉＮ膜质量及性能的影响,同时还研究了铝基离子镀ＴｉＮ薄膜的最佳工艺条件。结果表明,在铝合金基体上离子镀ＴｉＮ薄膜是可行的。     

Fabrication and characterization of ITO thin films on heat-resistant transparent flexible clay films

Transparent conductive indium tin oxide (ITO) thin films were deposited on transparent flexible clay films with heat resistant and high gas barrier properties by rf magnetron sputtering. The electrical, structural, and optical properties of these films were examined as a function of deposition temperature. A lowest resistivity of 4.2 × 10^− 4 Ωcm and an average transmittance more than 90% in the visible region were obtained for the ITO thin films fabricated at deposition temperatures more than 300 °C. It was found that ITO thin films with low resistivity and high transparency can be achieved on transparent flexible clay film using conventional rf magnetron sputtering at high temperature, those characteristics are comparable to those of ITO thin films deposited on a glass substrate.     

AZ91C镁合金表面Ti-TiN复合镀层的阴极多弧离子镀法制备与表征

采用阴极多弧离子镀膜技术,在AZ91C镁合金基底上首次成功镀制了结合力强的以Ti为过渡层的TiN复合膜层,并利用高分辨扫描电子显微镜(SEM)、X射线能谱仪(EDS)、显微划痕测试等技术对复合膜层的形貌、组织结构及性能进行分析研究。结果表明,采用多弧离子镀膜工艺,能在经过恰当预处理的镁合金基底上制备出性能良好的TiN膜,膜层均匀、致密,膜基结合力达130 mN以上,复合硬度达500 HV左右(AZ91镁合金基底为125 HV)。此外中性盐雾强化实验表明,经该方法处理后的镁合金在ASTM-B117标准测试条件下,腐蚀速率明显降低,经过200 h后,表面无明显腐蚀现象。真空多弧离子镀膜技术有望在镁合金表面防护领域得到应用。     

Preparation of Fe–Zn alloy deposits by electroless plating

Abstract

Fe–Zn binary alloys have been deposited by electroless plating. The films were prepared on a copper substrate in contact with an aluminium strip. The effects of the concentration of ligand, reducing agent, pH value, temperature of plating bath and plating time on the deposition rate, and structure and morphology of the films have been studied. A practical electroless plating solution has been developed.