SrMoO4薄膜的化学溶液制备技术和发光性质研究

利用化学溶液技术制备了具有单一白钨矿结构的SrMoO4多晶薄膜.用X射线衍射仪(XRD)分析了薄膜的晶相结构,用红外光谱(IR)对薄膜的均一性进行了表征,用原子力显微镜(AFM)对薄膜的表面形貌进行了观察.采用荧光光谱仪测试了所制SrMoO4薄膜在不同温度下的光致发光特性.研究结果表明,在276 nm的紫外光激发下,钼酸锶薄膜室温条件下显示出良好的光致发光特性,呈现宽带(～300 nm)的发光特征.另外,光致发光光谱的峰值呈现出明显的温度漂移特性,从511 nm(11 K)变化到484 nm(293 K).此外,本文还讨论了SrMoO4薄膜在闪烁材料和紫外成像薄膜材料方面的可能应用.     

磁控共溅射SiC纳米颗粒／SiO2基质镶嵌结构薄膜材料的微结构和光致发光特性

采用二氧化硅／碳化硅复合靶，用射频磁控共溅射技术和后高温退火的方法在Si(111)衬底上制备了碳化硅纳米颗粒／二氧化硅基质(nc-SiC／SiO2)镶嵌结构薄膜材料，用X射线衍射(XRD)，傅里叶红外吸收(FTIR)，扫描电子显微镜(SEM)和光致发光(PL)实验分析了薄膜的微结构以及光致发光特性。结果表明：样品薄膜经高温退火后，部分无定形SiC发生晶化，形成β-SiC纳米颗粒而较均匀地镶嵌在SiO2基质中。以280nm波长光激发薄膜表面，有较强的365nm的紫外光发射以及458nm和490nm处的蓝光发射，其发光强度随退火温度的升高显著增强，发光归结为薄膜中与Si-O相关的缺陷形成的发光中心。     

退火温度对Ta掺杂ITO薄膜性能的影响

利用电子束蒸发技术在玻璃衬底上沉积了Ta掺杂ITO(ITO:Ta)薄膜,对比研究了在不同退火温度下ITO:Ta和ITO薄膜表面形貌、方阻、载流子浓度、霍尔迁移率和透光率的变化情况.结果表明,随着退火温度的上升,ITO:Ta薄膜的晶化程度不断提高,并获得较低的表面粗糙度.在合适的退火温度下,ITO:Ta薄膜的光电性能也有显著的改善.当在氮气氧气氛围下经过500℃退火时,ITO:Ta薄膜得到最佳的综合性能,表面均方根粗糙度为2.17 nm,方阻为10-20 Ω,在440 nm的透光率可达98.5%.     

溶胶-凝胶法制备氧化锌/石墨烯薄膜和退火温度对其光致发光的影响

在铜衬底通过低压化学汽相淀积(LPCVD)和溶胶-凝胶法直接制备氧化锌/石墨烯纳米薄膜。分析退火温度对其结构、形态、化学状态和成份、光学性能的影响。XRD表明,氧化锌/石墨烯纳米结构表现出六方纤锌矿结构,晶体质量随退火温度从500℃到700℃的增加而提高。当退火温度达到700℃时,SEM显示,氧化锌薄膜呈现出颗粒均匀密集、表面光滑。其薄膜的平均颗粒尺寸约为35.7 nm。PL测量显示,退火温度为700℃时,氧化锌/石墨纳米薄膜具有较好的光学性能,这是因为样品的结晶质量较高且缺陷密度较低。     

纳米晶Bi2Se3-Sb2Se3薄膜的SILAR法制备及表征

采用连续离子层吸附反应(SILAR)法,分别用含有Se2-,Bi3+和Sb3+的离子溶液作为独立的阴、阳离子前驱溶液,以载玻片为衬底,在室温下沉积出致密且具有镜面金属光泽的Bi2Se3-Sb2Se3薄膜材料.为了改善薄膜样品的结晶状态,对其进行了退火处理.用AFM观察了薄膜样品的表面形貌,用XRD分析了退火前后薄膜样品的结晶状态.结果表明薄膜样品经200℃较低温度下退火处理4 h以后,薄膜的结晶状态由无定形态转化为多晶态,其平均晶粒尺寸为30 nm～40 nm.     

纳米晶Bi2Se3-Sb2Se3薄膜的SILAR法制备及表征

采用连续离子层吸附反应(SILAR)法,分别用含有Se2-,Bi3+和Sb3+的离子溶液作为独立的阴、阳离子前驱溶液,以载玻片为衬底,在室温下沉积出致密且具有镜面金属光泽的Bi2Se3-Sb2Se3薄膜材料.为了改善薄膜样品的结晶状态,对其进行了退火处理.用AFM观察了薄膜样品的表面形貌,用XRD分析了退火前后薄膜样品的结晶状态.结果表明:薄膜样品经200℃较低温度下退火处理4 h以后,薄膜的结晶状态由无定形态转化为多晶态,其平均晶粒尺寸为30 nm～40 nm.     

退火温度对Au/NiO纳米颗粒复合薄膜光吸收性能的影响

采用溶胶-凝胶法制备了Au/NiO纳米颗粒复合薄膜.用X射线衍射仪、原子力显微镜以及吸收光谱表征了薄膜的结构、表面形貌以及光学性能.研究结果表明:在500 ℃或500 ℃以上温度退火后,Au/NiO薄膜中存在NiO和单质Au两相,颗粒的平均大小为23～35 nm.薄膜中Au颗粒基本呈球形,随着温度的升高,薄膜表面的粗糙度减小,Au颗粒长大,分布也较均匀.Au/NiO薄膜在波长550～610 nm范围内具有明显的表面等离子共振吸收峰,随着退火温度的升高,吸收峰先蓝移后红移,其光吸收强度逐渐减弱.     

直流溅射沉积纳米晶氧化镍薄膜及电化学性能

采用直流溅射并结合热处理工艺制备氧化镍薄膜,利用X射线衍射仪(XRD)、扫描电镜(SEM)、能谱仪(EDX)考察退火温度对薄膜结构、形貌和组成的影响,并通过恒流充放电技术初步考察薄膜的电化学性能.结果表明,在400～500 ℃退火温度下制备了表面光滑、结构致密的NiO薄膜;随着退火温度的升高,薄膜的晶粒尺寸逐渐增大,晶形趋于完整;其中,500 ℃下退火2 h获得的NiO薄膜具有良好的电化学循环稳定性,有望成为高性能的全固态薄膜锂电池阳极材料.     

钼酸铋薄膜的化学溶液制备技术及其性能表征

使用化学溶液制各技术在硅(100)衬底上制备出符合化学计量比的钼酸铋(α相)薄膜.采用X射线衍射(XRD)分析的研究结果表明,所制备的薄膜具有单一的单斜晶相结构利用原子力显微镜(AFM)对其表面形貌进行表征,验证了实验过程中溶剂的改变对薄膜结构和表面形貌产生的影响;使用荧光发射仪研究了薄膜在室温下的发光特性.结果表明,通过化学溶液制备技术可以制备出具有单一晶相的钼酸铋(α相)薄膜,该薄膜具有良好的光致发光特性.     

退火温度对磁控溅射Mo薄膜结构和性能的影响

采用磁控溅射技术在石英基体上制备了厚度为600 nm的Mo薄膜,并在不同温度下(400～ 900℃)对其进行退火处理.通过XRD、SEM、四探针测试仪对Mo薄膜的结构和性能进行了分析.结果表明,随着退火温度的升高,(110)晶面择优取向特性增强.Mo薄膜在退火温度为800℃时电阻率达到最小值3.56×10-5 Ω·cm,在900℃退火时薄膜出现宽度约为50 nm的微裂纹且薄膜电阻率较大.     

Optical properties of Se or S-doped hydrogenated amorphous silicon thin films with annealing temperature and dopant concentration

We report the effects of the thermal annealing and dopant concentration on the optical properties of Se or S-doped hydrogenated amorphous silicon thin films. The Se and S-doped a-Si:H (a-Si,Se:H and a-Si,S:H) thin films were prepared by glow discharge plasma enhanced chemical vapor deposition (GD-PECVD) on 7059 corning glass. The films were subsequently annealed in vacuum in the temperature range from 100 to 500 °C. Influence of doping and annealing was examined by means of optical transmission spectroscopy of the films in the wavelength range of 300-1100 nm taken at room temperature. The absorption coefficients and refractive indices decreased as the annealing temperature increased from 100 to 300 °C and then increased again as the annealing temperature further increased to 500 °C, while the highest bandgap was observed at 300 °C for all of the samples. For a given dopant concentration bandgap was observed to be higher in a-Si,S:H than a-Si,Se:H thin films.     

Effect of ZrO<Subscript>2</Subscript> coating on<Emphasis Type="Italic">in vitro</Emphasis> formation of calcium phosphate

We prepared zirconia thin films on (100) Si wafer by using a chemical solution deposition with a zirconium naphthenate as a starting material. The films were pyrolyzed at 500°C for 10 min and finally annealed for 30 min in air at 500°C. Amorphous films after annealing had no distinct structure and were uniform along the cross section line.In vitro formation of the calcium phosphate was evaluated by the field emission-scanning electron microscope, energy dispersive X-ray spectrometer and Fourier transform infrared spectroscopy.     

钛酸铋薄膜的磁控溅射及其退火处理

采用射频磁控溅射技术,在Pt/Ti/SiO2/Si衬底上制备了钛酸铋(Bi4Ti3O12,简称BIT)薄膜。研究了衬底温度及后续退火处理对薄膜结构和表面形貌的影响。结果表明:适宜的衬底温度为200℃。随着退火温度(650~800℃)的升高,BIT薄膜的结晶性变好,晶粒尺寸增大,c轴取向增强。当退火温度达到850℃时,开始出现焦绿石相;700~800℃为适宜的退火温度,在此条件下得到的BIT薄膜结晶良好,尺寸均匀,表面平整致密。     

Preparation and properties of SiCN diffusion barrier layer for Cu interconnect in ULSI

SiCN thin films and Cu/SiCN/Si structures were fabricated by magnetron sputtering. And some samples underwent the rapid thermal annealing(RTA) processing. The thin-film surface morphology, crystal structure and electronic properties were characterized by atomic force microscopy(AFM), X-ray diffractometry(XRD), Fourier transform infrared transmission(FTIR) and four-point probe(FPP) analyses. The results reveal the formation of complex networks among the three elements, Si, C and N, and the existence of different chemical bonds in the SiCN films, such as Si-C, Si-N, C-N and C=N. The as-deposited SiCN thin films are amorphous in the Cu/SiCN/Si structures and have good thermal stability, and the SiCN thin films are still able to prevent the diffusion reaction between Cu and Si interface after RTA processing at 600 ℃ for 5 min.     

Dielectric properties of ZrTiO<Subscript>4</Subscript> thin films synthesized by sol-gel method

ZrTiO₄ thin films were successfully prepared on Pt/Ti/SiO₂/Si(100) substrates by a sol-gel process and gel films were heat-treated at various temperatures. The surface morphology, crystal structure, and dielectric properties of the thin films were investigated. It was possible to obtain ZrTiO₄ phase at temperatures above 650 °C for 2 h, which is much lower than the bulk sintering temperature. The microstructure of well-crystallized ZrTiO₄ thin films was a fine-grained microstructure less than 70 nm in grain size and the surface morphology was smooth with 22.4 rms roughness. The dielectric constant and loss of ZrTiO₄ thin films were 38 and 0.006, respectively, for thin films with 450 nm thickness heat-treated at 900 °C for 2 h.     

沉积温度和退火处理对BCN薄膜结构的影响

采用脉冲激光沉积技术,在Si(100)基片上制备了BCN薄膜,研究了沉积温度和退火处理对BCN薄膜组分和结构的影响。利用傅里叶变换红外光谱(FTIR)和X射线光电子能谱(XPS)对制备的BCN薄膜进行了表征。结果表明:沉积温度升高时,BCN薄膜的组分无明显改变。所制备的BCN薄膜包含B—N,C—B和C—N化学键,是由杂化的B—C—N键构成的化合物。真空退火温度为700℃时,BCN薄膜结构稳定;大气退火温度达到600℃时,BCN薄膜表面发生氧化分解,同时有C≡N键形成,表明C≡N键具有较好的高温热稳定性。     

氧化铱薄膜的制备及其导电机理研究

采用脉冲激光沉积技术在Si(100)衬底上制备了高导电的IrO2薄膜,重点研究了退火前后其电学性能和微观结构的变化规律。采用X射线衍射(XRD)、原子力显微镜(AFM)、光电子能谱(XPS)和四探针法对退火前后IrO2薄膜的结构和电性能进行了表征,并利用霍尔效应研究了IrO2薄膜的导电机理。结果表明:IrO2薄膜在空气中退火后,导电性能得到提高,其中在750℃退火的电阻率达到最小值37μΩ.cm。在25～500℃范围内,IrO2薄膜的高温电阻率随着温度的升高呈线性关系逐渐增大,呈现出类似金属的导电特征。在250～400℃沉积的IrO2薄膜载流子的类型为p型;沉积温度较高(500℃)或在更高温度退火处理后,IrO2薄膜载流子的类型为n型,其导电机理以电子导电为主。     

THE STABILITY INVESTIGATION OF FERROELECTRIC SrBi_2Ta_2O_9 THIN FILMS ANNEALED IN FORMING GAS

The hysteresis loop changes of ferroelecric SrBi2Ti2O9 (SBT) thin films (330nm) vs the temperature of forming gas (5% hydrogen 95% nitrogen) annealing were measured when the annealing time was 1min and 10min. The selected annealing temperature was at 100℃, 200℃, 250℃, 300℃, 350℃, 400℃ and 450℃, respectively. Our results showed that the ferroelectric properties were easily destroyed and the leakage current changed abruptly when the SBT thin films were in their ferroelectric phase (<270℃). The space charges at the grain boundary may take an important role in absorption polarity molecular hydrogen when the SBT thin films were in the ferroelectric phase. The oxygen recovery experiments were also performed and investigated in this work.