Ba_(0.8)Sr_(0.2)TiO_3薄膜的溶胶-凝胶法制备及表征

采用溶胶-凝胶法在Si和Pt/Ti/SiO2/Si衬底上制备钙钛矿结构的Ba0.8Sr0.2TiO3(BST)薄膜。对其前驱体干凝胶进行热重与差热(TG-DSC)分析,以此确定薄膜的热处理工艺。分别采用X射线衍射(XRD)、扫描电子显微镜(SEM)、原子力显微镜(AFM)和B1500A半导体器件分析仪对薄膜性能进行表征。结果表明:800℃下在氧气气氛中退火15 min可以得到结晶度良好、致密度较高的纯钙钛矿相BST薄膜,其对应的晶粒尺寸和均方根粗糙度分别为30~40 nm和5.80 nm。薄膜厚度为160~378 nm时,BST薄膜的介电常数和介质损耗随薄膜厚度的增加而增大。厚度为300 nm的BST薄膜的介电常数由于尺寸效应随温度升高单调降低,且居里温度在室温以下。     

溶胶-凝胶法制备氧化锌/石墨烯薄膜和退火温度对其光致发光的影响

在铜衬底通过低压化学汽相淀积(LPCVD)和溶胶-凝胶法直接制备氧化锌/石墨烯纳米薄膜。分析退火温度对其结构、形态、化学状态和成份、光学性能的影响。XRD表明,氧化锌/石墨烯纳米结构表现出六方纤锌矿结构,晶体质量随退火温度从500℃到700℃的增加而提高。当退火温度达到700℃时,SEM显示,氧化锌薄膜呈现出颗粒均匀密集、表面光滑。其薄膜的平均颗粒尺寸约为35.7 nm。PL测量显示,退火温度为700℃时,氧化锌/石墨纳米薄膜具有较好的光学性能,这是因为样品的结晶质量较高且缺陷密度较低。     

退火温度对SiC薄膜表面形貌和结构的影响

采用射频磁控溅射法在单晶Si(100)表面制备了非晶态SiC薄膜,并于真空热处理炉中进行(800～1200)℃×1h退火处理。通过X射线衍射、扫描电镜以及摩擦磨损试验研究了退火温度对薄膜结构、表面形貌以及性能的影响。结果表明,退火温度在800℃以上薄膜结构开始发生明显的晶态转变,在1000℃时薄膜主要结构为3C-SiC,且薄膜表面晶粒细小、致密,摩擦系数约为0.2。在1200℃退火时,薄膜为混晶结构,且薄膜晶粒明显粗化。     

溶胶-凝胶法制备氧化锌/石墨烯薄膜和退火温度对其光致发光的影响（英文）

在铜衬底通过低压化学气相淀积(LPCVD)和溶胶-凝胶法直接制备氧化锌/石墨烯纳米薄膜。分析退火温度对其结构、形态、化学状态和成分、光学性能的影响。XRD分析表明,氧化锌/石墨烯纳米结构表现出六方纤锌矿结构,晶体质量随退火温度从500℃到700℃的增加而提高。当退火温度达到700℃时,SEM显示,氧化锌薄膜呈现出颗粒均匀密集、表面光滑。其薄膜的平均颗粒尺寸约为35.7 nm。PL测量显示,退火温度为700℃时,氧化锌/石墨纳米薄膜具有较好的光学性能,这是因为样品的结晶质量较高且缺陷密度较低。     

退火温度对BiFeO_3薄膜结构与性能的影响

采用溶胶-凝胶法在ITO/glass衬底上制备了BiFeO_3薄膜。研究了退火温度对BiFeO_3薄膜样品的晶体结构、显微结构和铁电性能的影响,退火温度分别为450,475,500和525℃。并分析了相关机理。结果表明:当退火温度不高于500℃时,薄膜结晶较好,表面致密平整,随退火温度升高薄膜晶粒逐渐长大,当退火温度为500℃时,剩余极化强度Pr为62μC/cm~2;当退火温度增加到525℃时,薄膜表面晶粒较不均匀且出现了较多气孔,薄膜的铁电性能较差。     

玻璃衬底温度对溅射制备SnO_2-Al_2O_3双金属元素薄膜电学及光学特性的影响（英文）

采用射频(RF)磁控溅射法在玻璃衬底上制备了SnO_2-Al_2O_3(SAO)双金属元素薄膜。通过扫描电子显微镜SEM,X射线衍射仪XRD、四探针测量,UV-IR及光致发光(PL)谱研究了衬底温度对薄膜表面形貌、晶体微结构、电学及光学特性的影响。当衬底温度升高时,SAO薄膜的晶粒尺寸增大。SEM及XRD结果显示的均质表面结构及大晶粒尺寸表明薄膜具有良好的表面形貌和结晶度。在400~800 nm的可见光范围,薄膜的透射率可达80%~90%,计算得到薄膜的带隙4.11~4.14 eV,表面电阻7.0×10~4~9.4×10~4W/。通过合理选择溅射温度,薄膜的带隙可得到增宽,表面电阻可被降低。测量还发现,所制备SAO薄膜的PL谱在UV及红光带发光,这种多晶SAO薄膜可用于透明导电氧化物(TCO)薄膜,太阳能电池窗、传感器及光发射器。     

退火对氧化钒薄膜成分及热敏性能的影响

在衬底上溅射沉积一层金属钒膜,然后对其退火制备氧化钒薄膜.研究了原位退火热处理和后续退火热处理对氧化钒薄膜成分及其热敏性能的影响.XPS分析表明,原位380 ℃退火处理得到的氧化钒薄膜中4价态和5价态钒的比例为1.097:1,经后续退火处理后,该比例变为0.53:1;同时,原位退火处理得到的氧化钒薄膜的V/O比为1:2.24,经后续退火处理变为1:2.33.AFM分析后显示,经后续退火处理的薄膜晶粒尺寸有所增大.测试了薄膜方阻随温度的变化,结果显示,生成的薄膜具有明显的金属-半导体相变;原位退火热处理后的薄膜方阻(R)为5.46 kΩ/□(25 ℃),方阻温度系数(TRC)为-1.5%/℃(25 ℃);后续退火热处理后,薄膜方阻增大到231 kΩ/□(25 ℃),方阻温度系数升高为-2.74%/℃(25 ℃).此外,就氧化钒薄膜的成分、热敏性能与退火处理之间的关系进行了讨论.     

高熵合金AlCrTaTiZrRu/(AlCrTaTiZrRu)N0.7扩散阻挡层的制备与性能研究

目的 验证15 nm厚度AlCrTaTiZrRu/(AlCrTaTiZrRu)N0.7的势垒层热稳定性和扩散阻挡性能。方法 采用直流磁控溅射技术在n型Si(111)基片上真空溅射沉积15 nm的AlCrTaTiZrRu(3 nm)/(AlCrTaTiZrRu)N0.7 (12 nm)双层阻挡层，随后在双层AlCrTaTiZrRu/(AlCrTaTiZrRu)N0.7薄膜的顶部沉积50 nm厚的Cu膜，最终制得Cu/AlCrTaTiZrRu/(AlCrTaTiZrRu)N0.7/Si复合薄膜试样。将样品在真空退火炉中分别进行600~900 ℃高温退火30 min，以模拟最恶劣的应用环境。用场发射扫描电镜(FE-SEM)、X射线衍射仪(XRD)、能谱分析仪(EDS)、四探针电阻测试仪(FPP)以及原子力显微镜(AFM)对试样的表面形貌、物相组成、化学成分、方块电阻和粗糙度进行表征分析。结果 沉积态AlCrTaTiZrRu/(AlCrTaTiZrRu)N0.7薄膜呈现非晶结构，与Cu膜和Si衬底的结合良好。在800 ℃退火后，Cu/AlCrTaTiZrRu/(AlCrTaTiZrRu)N0.7/Si薄膜系统结构完整，膜层结构界面之间未出现分层现象，表面Cu颗粒团聚现象加剧，Si衬底和Cu膜表面未发现Cu-Si化合物生成，薄膜方阻保持在较低的0.070 ?/sq;900 ℃退火后，薄膜系统未出现层间分离和空洞现象，Cu膜表面形成孤立的大颗粒Cu-Si化合物，薄膜电阻率大幅上升。结论AlCrTaTiZrRu/(AlCrTaTiZrRu)N0.7双层结构在800 ℃退火后仍能有效抑制Cu与Si相互扩散，其非晶结构增强了Cu/HEA/HEAN0.7/Si体系的热稳定性和扩散阻挡性。     

退火升温速率对VO2薄膜相变性能的影响

采用溶胶-凝胶法在云母(001)衬底表面制备氧化钒薄膜,然后通过高温退火获得VO2多晶膜.利用SEM、FTIR等手段,分析不同退火升温速率条件下所制备薄膜的微观形貌、光学性能和热致相变特性.结果表明:在退火升温速率为8 ℃/min时,所制备的VO2薄膜具有最优异的热致相变特性,相变温度为65 ℃,滞后温宽为10 ℃.     

退火处理对WC-DLC薄膜结构及性能的影响

为研究退火处理对WC-DLC薄膜结构与性能的影响,采用磁控溅射技术在高速钢表面沉积WC-DLC薄膜,并作不同温度下的退火处理,对不同温度退火处理后的WC-DLC薄膜的结构、摩擦学性能与耐腐蚀性能进行系统表征。结果表明:WC-DLC薄膜呈现出非晶态特征,随着退火温度的上升,薄膜中sp3-C相对含量下降;当退火温度在250℃时,WC-DLC薄膜在大气环境下与去离子水环境下分别表现出最优的摩擦学性能,磨损率分别为1.25×10~(-7)mm~3/Nm与1.02×10~(-7)mm~3/Nm。同时,当退火温度低于250℃时,WC-DLC薄膜的耐腐蚀性能无明显变化,但当退火温度高于250℃时,WC-DLC薄膜的耐腐蚀性明显下降。退火处理对WC-DLC薄膜的热稳定性、摩擦学性能及耐腐蚀性能有重要影响。     

退火温度对钴铁氧体薄膜结构和性能的影响

采用溶胶-凝胶法结合匀胶旋涂工艺在复合基片(Pt/Ti/SiO2/Si)上制备了钴铁氧体(CoFe2O4)薄膜,利用XRD、SEM、VSM分析了薄膜的微结构以及磁性能,研究了不同退火温度对钴铁氧体薄膜的结构和磁性能的影响.结果表明,钴铁氧体在500℃时开始形成尖晶石相.随着退火温度的增高,钴铁氧体晶粒逐渐长大,饱和磁化...     

Effect of sputtering pressure and rapid thermal annealing on optical properties of Ta2O5 thin films

Ta2O5 thin films were deposited by DC reactive magnetron sputtering followed by rapid thermal annealing(RTA). Influence of sputtering pressure and annealing temperature on surface characteristics, microstructure and optical property of Ta2O5 thin films were investigated. As-deposited Ta2O5 thin films are amorphous. It takes hexagonal structure (δ-Ta2O5) after being annealed at 800 ℃. A transition from δ-Ta2O5 to orthorhombic structure (L-Ta2O5) occurs at 900-1 000 ℃. Surface roughness is decreased after annealing at low temperature. Refractive index and extinction coefficient are decreased when annealing temperature is increased.     

Characterization of shape-memory alloy thin films made up from sputter-deposited Ni/Ti multilayers

A novel fabrication process for Ni–Ti shape-memory alloy thin films is presented. This process is based on the appropriate annealing of sputter-deposited Ni/Ti multilayers. X-ray diffraction shows that interdiffusion of the two constituents results either in the amorphization of the multilayer structure after annealing at 330°C or in the recrystallization as a Ni–Ti intermetallic compound after annealing at temperatures above 400°C. A single 30 min annealing step in the temperature range from 400 to 800°C is sufficient to obtain Ni–Ti films showing martensitic phase transformations and the shape-memory effect. The influence of increasing annealing temperature on the transformation behavior is investigated by differential scanning calorimetry. The evolution of the transformation temperatures is found to be qualitatively similar to conventional sputter-deposited Ni–Ti films. The corresponding microstructure is studied by transmission electron microscopy. A very fine-grained structure is observed even after annealing at 800°C. The film composition can be varied by adjusting the thickness ratio of the individual Ti and Ni layers. Transformation curves of films with nominal compositions of 49.5 and 54.0 at.% Ti are compared. It is demonstrated that Ni–Ti films made up from multilayers may possess an intrinsic “two-way” shape-memory effect, which is a very interesting feature in view of the development of thin film micro-actuators.     

Effect of annealing temperature on structure and electrochemical properties of LiCoO2 cathode thin films

LiCoO2 thin films, which can be used as a cathode material in microbatteries, were deposited using radio frequency (r.f.) magnetron sputtering system from a LiCoO2 target and in an O2+Ar atmosphere.The films were characterized by various methods such as XRD, SEM and AFM.The LiCoO2 films were annealed in air at 300, 500, 700 and 800 ℃ respectively.The effect of the annealing temperature on the structure, the surface morphology and the electrochemical properties of the films were investigated.The LiCoO2 thin film deposited at room temperature is amorphous and has smaller grain size.With increasing of annealing temperature, the crystallinity of the films is promoted.When the annealing temperature increases to 700 ℃, the films have a perfect crystalline LiCoO2 phase.The LiCoO2 thin film without annealing has no discharge plateau and small discharge capacity (about 27 μAh·cm-2μm).The discharge capacity increases with the increasing of annealing temperature and reaches 47 μAh·cm-2μm for the film annealed with 700 ℃, which also shows the typical discharge plateau of 3.9 V.The cycle performance of LiCoO2 thin films of as grown and annealed at different temperatures were studied.In the case of the film without thermal treatment, the capacity fading is much faster than that of the film annealed at different temperature, showing about 40% capacity loss only after 25 cycles.However, in the case of the film annealed at 700 ℃, the capacity reaches to steady state gradually and maintained constantly with cycling.After 25 times cycling, the discharge capacity of the film annealed at 700 ℃ decreases to about 36.9 μAh·cm-2·μm, only 0.8% capacity loss per cycle.     

真空蒸镀多晶硅薄膜工艺对其组织和性能的影响

采用真空蒸镀并退火的方法制备多晶硅薄膜,采用透射电子显微镜对退火前后的样品进行了表征,通过原子力显微镜观察了薄膜的形貌,并测试了薄膜的耐压性能,分析了基板温度、基板距离和退火工艺对薄膜组织和性能的影响.实验结果表明:真空蒸镀所得薄膜为非晶硅薄膜,退火处理可使其多晶化,晶粒尺寸达0.5μm;基板温度120℃、基板距离60...     

GROWTH OF β-SiC BY rf SPUTTERING ON SILICON SUBSTRATES

1. IlltroductiollSili(.oll t.arbide (SiC) llas beell il1vestigated as a nlaterial with great poteIltial il1 high-p()xxer. high teulperature. and high-f1equel1c} devices, sil1ce it has feat[tres of high break-(l()ttll voltage, l1igll satllratioll t.elocit}…     

In-situ thermal evolution of Ni/Ti multilayer thin films

Nickel and titanium alternated nanolayers were deposited from Ti and Ni targets. The multilayer thin films were designed in order to have equiatomic overall chemical composition with a period from 5 to 70 nm. The chemical composition, morphology, structure and phase transformation behaviour were studied. The surface and cross-section morphology of the as-deposited thin films was analysed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The Ni/Ti thin films present in their surface nanograins and for higher periods in cross section it was possible to distinguish the alternated layers and measure their thickness. The structural evolution with temperature was analysed by in-situ hot stage X-ray diffraction (XRD). The as-deposited multilayer thin films exhibit a tendency to a transitory disorder as the period decreases. For the smaller periods a disordered phase forms during the deposition process, while in Ni/Ti multilayers with higher periods this phase is only observed during annealing. By increasing the temperature an exothermic reaction occurs with the formation of the B2-NiTi austenitic phase. In spite of moderate enthalpy of mixing, the multilayers with intermediate modulation period of Ni/Ti films show potential to be used for joining purposes.     

Effects of substrate temperature and annealing treatment on the microstructure and magnetic characteristics of TbDyFe films

A series of TbDyFe films were prepared by DC magnetron sputtering. The effects of substrate temperature and annealing temperature on the phase structure and the magnetic properties of the sample films were investigated. The an-nealing treatment has a significant influence on the microstructure and the magnetic properties of the sample. The results obtained by XRD indicate that the films deposited at a temperature lower than 525℃ are amorphous and have an easy magnetization direction perpendicular to the film plane. An RFe2 phase is formed in the sample annealed at 550℃ and the residual phases observed are Fe and rare earth oxide. The magnetic properties Hc and Mr/Ms of the film annealed at 550℃ obtain the maximum values,for which the formation of the RFe2 phase is mainly responsible. An annealing treatment leads to a rotation of the sample’s easy axis from being parallel to the film surface to becoming vertical.     

化学溶液工艺制备多晶钼酸钙薄膜

利用化学溶液途径成功地制备出了符合化学计量比的钼酸钙多晶薄膜.通过旋涂技术将薄膜沉积在Si(100)或载玻片上,并利用SEM技术表征了薄膜的表面形貌,以及薄膜的表面随退火温度变化的特征.X射线衍射结果显示,在溶液中,钼酸钙化合物就已直接生成而不需经过任何中间过程.退火温度对钼酸钙薄膜微观结构的影响研究表明,当退火高于550℃时薄膜的生长具有择优取向特征.钼酸钙薄膜的拉曼光谱测试结果进一步表明了钼酸钙薄膜的四方相结构特征以及薄膜微观结构的均一性.此外,本文还报道了不同温度下测得的钼酸钙薄膜在紫外光激发下的光致发光性质,其研究结果表明,在276 nm的紫外光激发下,钼酸钙薄膜具有一个宽的(～200 nm)绿光发射带.     

退火温度对Au/NiO纳米颗粒复合薄膜光吸收性能的影响

采用溶胶-凝胶法制备了Au/NiO纳米颗粒复合薄膜.用X射线衍射仪、原子力显微镜以及吸收光谱表征了薄膜的结构、表面形貌以及光学性能.研究结果表明:在500 ℃或500 ℃以上温度退火后,Au/NiO薄膜中存在NiO和单质Au两相,颗粒的平均大小为23～35 nm.薄膜中Au颗粒基本呈球形,随着温度的升高,薄膜表面的粗糙度减小,Au颗粒长大,分布也较均匀.Au/NiO薄膜在波长550～610 nm范围内具有明显的表面等离子共振吸收峰,随着退火温度的升高,吸收峰先蓝移后红移,其光吸收强度逐渐减弱.