AuSn钎料及AuSn/Ni焊点的组织性能研究

分别采用叠轧-合金化法和回流焊技术制备AuSn箔材钎料和AuSn/Ni焊点,用扫描电子显微镜及电子万能试验机研究钎焊时间对AuSn/Ni界面组织及焊点剪切性能的影响。结果表明:采用叠轧-合金化法制备的AuSn钎料的熔点和化学成分都接近Au-20Sn共晶钎料。Ni/AuSn/Ni焊点在330℃钎焊30s时形成良好的层状ζ-(Au,Ni)5Sn+δ-(Au,Ni)Sn共晶组织;钎焊60s时,AuSn/Ni界面产生薄而平直的(Ni,Au)3Sn2金属间化合物(IMC)层和针状(Ni,Au)3Sn2化合物;随着钎焊时间继续延长,(Ni,Au)3Sn2IMC层厚度明显增加,针状(Ni,Au)3Sn2化合物异常长大。同时,随着钎焊时间延长Ni/AuSn/Ni钎焊接头的剪切强度先增加后减小,钎焊90s时的剪切强度达到最高12.49MPa。     

退火工艺对快速凝固Au-20Sn钎料组织与性能的影响

采用单辊快速凝固技术制备了Au-20Sn钎料薄带,借助FESEM、EPMA和EDS等测试手段,研究退火工艺对快速凝固Au-20Sn钎料合金组织与性能的影响。结果表明,单辊快速凝固Au-20Sn钎料合金由少量树枝状的初生ζ′-Au_5Sn相和共晶组织(ζ′-Au_5Sn+δ-AuSn)组成,显微组织细小。退火过程中,Sn元素从ζ′-Au_5Sn相中向δ-AuSn相中扩散,δ-AuSn相长大。基于钎料薄带显微组织、成分分布和塑性综合考虑,确定退火工艺为240℃×4h。     

Au-20Sn贵金属钎料箔材的制备及性能研究

采用多层复合及扩散合金化工艺制备Au-20Sn贵金属钎料箔材，研究箔材的化学成分、熔化特性、力学性能、物相组成、组织形貌和微区成分，并采用真空钎焊工艺对所制备钎料箔材的钎焊性能进行研究。结果表明，采用多层复合及扩散合金化工艺制备的Au-20Sn钎料箔材脆性明显改善，能够在室温下冷冲裁加工成特定尺寸的预成型焊片；钎料箔材的化学成分和杂质含量符合设计要求，显微组织由连续且均匀分布的(AuSn)和(Au5Sn)两相组成；钎料熔程仅为3.1 ℃，在铜基材上润湿性和铺展性良好，钎焊铜接头力学性能较好。     

激光与红外重熔对63Sn37Pb/焊盘界面微观组织的影响

研究了塑料球栅阵列 (PBGA)钎料球激光重熔以及红外二次重熔过程中 6 3Sn37Pb共晶钎料与Au/Ni/Cu焊盘之间界面反应。结果表明 :钎料凸点 /焊盘界面处金属间化合物的形貌和数量与激光输入能量密切相关。随着激光输入能量的增大 ,Au完全溶解到钎料中 ,界面处连续分布的Au Sn化合物层全部转变为针状AuSn4 相 ,部分针状AuSn4 从界面处折断并落入钎料中 ,最后变为细小的颗粒状弥散分布在钎料内部。红外二次重熔后焊点界面处的针状AuSn4 溶解到钎料中 ,钎料组织由原来的粒状结晶结构变为层片状结晶结构 ,焊点界面处出现了不同形态的粗大富Pb相     

保温时间对GaAs功率芯片钎缝组织及性能的影响

GaAs芯片的使用性能受其散热效果决定,而散热主要依靠散热垫块与芯片连接的钎缝来决定。为增加钎缝的散热效果和基体结合强度,文中分别在芯片层利用物理气相沉积方法沉积Pd和Au膜,而在Cu/Mo/Cu散热垫块上沉积Ni和Au膜,采用AuSn20共晶钎料,研究保温时间对钎焊缝组织和界面结合性能影响。研究结果表明:共晶结构主要由15～20μm厚的合金层和0.5～3μm厚的IMC层构成。随着保温时间延长,合金中Sn元素会逐渐被IMC层消耗,合金成分往富Au的(L+ζ′)相区迁移,相比例增加,保温时间超过60 s后, IMC层厚度超过3.9μm,剪切力快速减小至89.67 N。     

Au-20Sn合金的急冷制备及钎焊性能

用单辊旋淬法制备了Au-20Sn合金薄带钎料,利用差示扫描量热分析(DSC)、X射线衍射分析(XRD)及场发射扫描电镜(FESEM)等方法对合金的熔化特性、相组成及显微组织进行了观察分析,并研究了与Cu、Ni基材的焊接性能。结果表明,急冷钎料合金熔化温度低于共晶点且随铜辊转速发生变化,铜辊转速越快,熔点越低,急冷合金显微组织细小均匀,棒状或卵状δ-AuSn相分布于基体组织上,晶粒尺寸可达纳米级;急冷法抑制了脆性相ζ’-Au5Sn的形成,改善了合金塑性性能;急冷钎料薄带与Cu、Ni基材表面润湿优良,在Cu基材上扩散距离更远,形成无针状组织析出的界面层;与Ni形成疏松的颗粒状IMC层;Cu基体的焊接接头抗剪强度高于Ni基体。     

AuSn20/Ni焊点的组织及界面金属间化合物的生长动力学行为（英文）

采用回流焊技术制备AuSn20/Ni焊点,通过扫描电镜(SEM)和电子探针(EPMA)技术分析焊点的界面反应及退火过程中组织的演变,并探讨界面金属间化合物(IMC)的生长动力学。结果表明,在583 K钎焊后,AuS n20/Ni界面形成(Ni,Au)3Sn2IMC层,而且IMC层厚度l的变化随退火时间t的延长符合表达式l=k(t/t0)n。焊点分别在393、433和473 K下退火时,关系指数n分别为0.527、0.476和0.471,表明在低于液相线温度退火时,AuSn20/Ni界面IMC层的生长以体积扩散机制为主,且其体积扩散的预指数因子K0和激活焓QK分别为1.23×10-7 m2/s和81.8 k J/mol。     

SnPb钎料与Au/Ni/Cu焊盘反应过程中Au的分布

采用熔融的共晶锡铅钎料熔滴与Au/Ni/Cu焊盘瞬时接触液固反应形成钎料凸点,随后进行再流焊及老化.对这一过程中的钎料/焊盘界面金属间化合物组织的演化,尤其是Au-Sn化合物的形成及分布进行了研究.结果表明,钎料熔滴与焊盘液固反应形成了Au-Sn界面化合物,铜层未完全反应.在随后的再流焊过程中,界面处的铜层完全消耗掉,镍层与钎料反应形成Ni3Sn4界面组织;针状的AuSn4化合物分布于钎料基体中.老化条件下分布于钎料基体中的AuSn4重新在界面沉积,在Ni3Sn4层上形成(AuxNi1-x)Sn4层.(AuxNi1-x)Sn4在界面的沉积遵循分解扩散机制,并促进富铅相的形成.钎料与焊盘反应过程中Au-Sn化合物的演化及分布直接影响钎料与焊盘的连接强度.     

激光重熔PBGA钎料球与Au/Ni/Cu焊盘的界面反应

研究了塑料球栅阵列（PBGA）钎料球重熔过程中钎料与Au/Ni/Cu焊接之间的界面反应，结果表明：界面处金属间化合物的生成与激光输入量能密切相关，当激光输入能量较小时，焊盘上的Au没有完全溶解到钎料中，界面处存在一层连续的AuSn2和一些垂直或斜向生长到钎料中的针状AuSn4化合物，增大激光输入能量，Au完全溶解到钎料中，界而处连续的AuSn2化合物层全部转化为针状AuSn4相，有部分AuSn4针从界面处折断并落入钎料中，当激光功率为18W，激光加热时间为400ms时，AuSn4相在界面处消失，以细小颗粒弥散分布在钎料内部。     

钎焊中Au80Sn20共晶钎料与Ni/Au镀层的界面反应

采用Au80Sn20共晶钎料钎焊4J34可伐合金基板与铝硅基板(50%Si-Al),板材表面均有Ni/Au镀层。通过光学显微镜研究了工艺参数对钎缝宏观形貌的影响。采用扫描电镜、EDS能谱分析和XRD检测研究了钎缝组织成分以及钎料与基板、基板镀层间的元素扩散和界面反应,从而探究异种金属材料钎焊连接机理。结果表明,钎焊时,基板材料表面的Au层完全进入钎料中,暴露出的Ni层与钎料中的Sn形成金属间化合物Ni_3Sn_4,钎料发生共晶反应生成AuSn共晶与Au5Sn棒状枝晶,并析出大量的Au,Au_5Sn包围在Ni_3Sn_4外围,钎料中间层形成AuSn共晶与富Au区。基板元素Fe、Co、Al、Si和钎料元素Au、Sn均无法通过Ni镀层的阻挡相互扩散,唯一能突破Ni镀层在基板和钎料中扩散的是P元素。     

Microstructural evolution of Au-Sn solder prepared by laminate rolling during annealing process

The microstructural evolution and interfacial reaction of the Au/Sn/Au/Sn/Au/Sn/Au couples were investigated during annealing at 453,523,and 543 K for up to 240 h.The Au/Sn combination formed a rapid diffusion system.Even in rolled Au-Sn solder,three phases,such as AuSn,AuSn2,and AuSn4,were formed.After initial annealing at 453 K,the diffusion layers of AuSn,AuSn2,and AuSn4,which were formed after rolling,expanded gradually and then fully transformed into ζ phase(containing Sn from 10% to 18.5%,mole fraction) and δ(AuSn) phase.As a whole,the microstructure of the couple was stable during annealing at 453 K.The solid-state interfacial reaction was much faster at 523 K than at 453 K.After annealing at 523 K for 6 h,the AuSn,AuSn2,and AuSn4 were fully transformed into the ζ phase and δ phase(AuSn) .In spite of the prolonged annealing time for up to 240 h,no significant change of the interfacial microstructure occurred,and the microstructure of the couple was stable during annealing at 523 K.When annealing at 543 K,however,the interfacial of Au/Sn was transformed into solid-liquid state,and the whole couple formed a eutectic structure rapidly,causing the solder to be brittle.The study results clearly demonstrate that the service temperature of the Au-Sn solder should be lower than 543 K.     

Effect of Zn addition in Sn-rich alloys on interfacial reaction with Au foils

To restrain the formation of AuSnx intermetallic components （IMCs） in solder joints, Zn was added into Sn-rich solders. The solder joints were fabricated by a laser reflow soldering method, and then they were aged at 125 ℃. The results show that the total thickness of AuSnx IMCs at the interface of pure Sn solder and Au foils reaches about 54 μm under the condition of 600 h aging. In Sn-1.5Zn solder joints, however, formation of AuSn4 IMCs is restrained greatly. As the content of Zn in the solder is increased to 3.5%（mass fraction）, no AuSn4 IMC is observed at the interface. Au-Zn phases form beside AuSn2 and AuSn IMCs layers. As for Sn-9.0Zn solder joints, Au-Zn and Au-Zn-Sn phases and few AuSnx IMCs form at the interface. Moreover, total thickness of the phases and IMCs is far less than that ofAuSnx IMCs in the pure Sn solder joints.     

机械合金化法制备金锡合金

采用高能球磨机械合金化法制备了Au-20%Sn合金,分析了合金物相、组织和硬度随球磨时间的变化规律,探讨了合金塑性与合金组织及制备工艺的关系。结果表明:采用高能球磨机械合金化法可以制备Au-20%Sn合金;随球磨时间的增加,Au-20%Sn的合金化程度增加,组织中的金属间化合物逐渐增多,最终基本上为δ相和ζ′相;合金的硬度随球磨时间的延长逐渐升高,并在球磨60min后获得最高硬度104.2HV,然后开始下降;球磨后的合金粉末在190℃×2h的烧结过程中发生了不同程度的再结晶和晶粒长大,再结晶程度随球磨时间的延长而增加,导致烧结后合金硬度在球磨时间超过60min后反而下降。     

Evolution of AuSnx intermetallic compounds in laser reflowed micro-solder joints

To investigate the effect of Au thickness on evolution of AuSnx IMCs,pads with 0.1,0.5 and 4.0 μm thickness of Au surface finish were utilized.Laser reflowed solder joints were aged in 125℃ isothermal ovens.Results indicated that little IMC formed at the interface of solder and pad with 0.1 μm thickness of Au.Even in condition of 744 hours aging,thickness of IMCs did not increase obviously.As for the joints with 0.5 μm thickness of Au,most of AuSn4 IMCs stayed at the interface and were in needle-like or dendritic morphology.With the increase of aging time,AuSn4 IMCs became flat and changed to a continuous layer.In the joints with 4.0 μm thickness of Au on pads,AuSn,AuSn2,AuSn4 IMCs and Au2Sn phase formed at the interface.As aging time was increased,more Sn rich IMCs formed at the interface,and evolved to AuSn4 IMCs in condition of long time aging.Thickness of AuSn4 IMCs reached about 30 μm.     

Ni/Au镀层与SnPb焊点界面电迁移的极性效应

采用Ni(P)/Au镀层-SnPb焊点-Ni(P)/Au镀层的互连结构,研究电迁移作用下焊点/镀层界面金属间化合物(IMC)的极性生长特性,从电位差和化学位梯度条件下原子定向扩散的角度分析互连结构的微结构变化的微观机制。在无外加应力条件下,由于液态反应速率远远快于固态反应速率,Ni(P)/Au镀层与焊点界面IMC经过120℃、100h的热处理后无明显变化。但是,在电迁移作用下,由于Sn沿电子流方向的定向扩散使阳极界面IMC异常生长,而阴极界面IMC厚度基本不变。由于电子由上层Cu布线进入焊点的电子注入口位于三相结合界面位置,在焦耳热的作用下会导致焊料的局部熔融,引起Cu布线与焊料的反应,使电子注入口的Cu布线合金化。     

EVOLUTION OF MICROSTRUCTURE OF Sn-Ag-Cu LEAD-FREE FLIP CHIP SOLDER JOINTS DURING AGING PROCESS

Flip chip bonding has become a primary technology that has found application in the chip interconnection process in the electronic manufacturing industry in recent years. The solder joints of the flip chip bonding are small and consist of complicated microstructures such as Sn solution, eutectic mixture, and intermetallic compounds （IMCs）, whose mechanical performance is quite different from the original solder bulk. The evolution of microstructure of the flip chip solder joints under thermal aging was analyzed. The results show that with an increase in aging time, coarsening of solder bulk matrix and AuSn4 IMCs occurred within the solder. The IMCs that are formed at the bottom side of the flip chip bond were different from those on the top side during the aging process. （Cu, Ni, Au）0Sn5 were formed at the interfaces of both sides, and large complicated （Au,Ni, Cu）Sn4 IMCs appeared for some time near the bottom interface after aging, but they disappeared again and thus （Cu,Ni, Au ）0Sn5 IMC thickness increased considerably. The influence of reflow times during the flip chip bonding （as-bonded condition） on the characteristics of interfacial IMCs was weakened when subjected to the aging process.     

Cu基板退火处理的Cu/Sn58Bi/Cu钎焊接头界面微结构

研究了铜基板退火处理对Cu/Sn58Bi界面微结构的影响. 结果表明,在回流以及时效24 h后Cu/Sn58Bi/Cu界面只观察到Cu₆Sn₅. 随着时效时间的增加,在界面形成了Cu₆Sn₅和Cu₃Sn的双金属间化合物(IMC)层,并且IMC层厚度也随之增加. 长时间时效过程中,在未退火处理的铜基板界面产生了较多铋偏析,而在退火处理的铜基板界面较少产生铋偏析. 比较退火处理以及未退火处理的铜基板与钎料界面IMC层生长速率常数,发现铜基板退火处理能减缓IMC层生长,主要归因于对铜基板进行退火处理能够有效的消除铜基板的内应力与组织缺陷,从而减缓Cu原子的扩散,起到减缓IMC生长的作用.     

热轧和退火对Au-20Sn合金箔材组织和性能的影响

采用热轧方法制备了Au-20Sn合金箔材,研究轧制和退火处理对合金箔材微观组织和硬度的影响。结果表明,铸态Au-20Sn合金组织由枝晶状Au5Sn初生相及交替生长形成的片层状共晶组织组成。铸态合金经热轧后发生了动态再结晶,粗大的片层状共晶组织转变为沿轧制方向拉长的两相组织。经退火处理,合金热轧组织逐渐转变为均匀的等轴状。随退火时间和退火温度的增加,合金硬度逐渐降低。经合适条件退火,能够提高箔材变形性能,避免冲压焊片过程中产生边部的裂纹缺陷。     

Study on laser and hot air reflow soldering of PBGA solder ball

Laser and hot air reflow soldering of PBGA solder ball was investigated.experimental results showed that surface quality and shear strength of solder bump reflowed by laser was superior than the solder bump by hot air ,and the microstructure within the solder bump reflowed by laser was much finer.Analysis on interfacial reaction showed that eutectic solder reacted with Au/Ni/Cu pad shortly after the solder was melted.Interface of solder bump reflowed by laser consists of a continuous AuSn4 layer and remnant Au element.Needle-like AuSn4 grew sidewise from interface,and then spread out to the entire interface region.A thin layer of Ni3Sn4 intermetallic compound was found at the interface of solder bump reflowed by hot air,and AuSn4 particles distribute within the whole solder bump randomly.The combination effect of the continuous AuSn4 layer and finer eutectic microstructure contributes to the higher shear strength of solder bump reflowed by laser.