CxH1-x薄膜制备

以反式－２－丁烯为主工作气体,采用低压等离子体化学气相沉积法制备ＣｘＨ１－ｘ薄膜,研究了在不同的Ｈ２与反式２－丁烯流量比下制备的ＣｘＨ１－ｘ薄膜的傅里叶变换红外光谱（ＦＴ－ＩＲ）及ＸＰＳ谱的特性,初步探讨了ＣｘＨ１－ｘ的生长机理,膜中ｓｐ＾３杂化碳原子和ｓｐ＾２杂化碳原子的数量以及两者的比例与沉积条件有关。     

CHN薄膜的制备

文章简要描述了空心阴极等离子体化学气相沉积(HPCVD)的原理，以及用HPCVD方法制备CHN薄膜的工艺和实验结果。用XPS和AFM分别分析了CHN薄膜中C和N的成分及表面形貌，并得到了一定条件下的薄膜沉积速率。     

N,N,N',N'-四丁基-3-氧-戊二酰胺辐解产物的研究Ⅱ液相辐解产物的定性分析

采用顶空固相微萃取（Headspace Solid-phase Microextraction,HS-SPME）技术结合气相色谱／质谱（GC／MS）联用方法对N,N,N’,N’-四丁基-3-氧-戊二酰胺（N,N,N’,N’-tertbutyl-30xa-pentanediamide,TBOPDA）的主要液相辐解产物进行定性研究,对影响HS-SPME的参数进行了优化。通过计算机谱库检索、标准物质对照和人工解析的方法确定了TBOPDA的六种液相辐解产物：（C4H9）2NH、（C4H9）3N、CH3CON（C4H9）2、HCON（C4H9）2、CH30CH2CON（C4H9）2、HOCH2CON（C4Hg）2;可能产物：HOCOCH2OCH2CON（C4H9）2或HCOCH2OCH2CON（C4H9）2,提出了TBOPDA的三种可能断裂方式。     

高温超导外延薄膜YBa2Cu3O7—x中空位型缺陷的低能正电子寿命研究

利用脉冲低能正电子束系统测量了脉冲激光沉积法，磁控溅射法和多源共蒸法制备的高浊转眼上延薄膜ＹＢａＣｕ３Ｏ７－ｘ的低能正电子寿命谱，结果表明，除块材中普遍存在的正电子浅捕获中心，还大量含有块材中缺乏的正电子深捕获中心，并且其尺度随温度的降低而长大。脉冲激光沉积法制备高温超导外延薄膜ＹＢａ２Ｃｕ３Ｏ７－ｘ的正电子寿命和沉积条件（衬底温度及空气分压）的关系研究表明，这种深捕获缺陷的种类与沉积条件有关，而     

高能重离子辐照制备碳氮化合物材料研究

室温下,先用100-120 keV的N离子注入类金刚石薄膜和石墨中,注入剂量5×1017至5×1018 cm-2,再用高能Xe、U、C60离子分别辐照注氮后的样品,然后用显微FTIR和Raman、XRD/XPS等手段进行分析表征,研究了实验样品中由辐照引起的新化学键和新相的产生.实验结果显示,高能重离子辐照可在所有样品中产生大量的CN键,高N浓度和大密度能量沉积导致sp3/sp2键比率的增加以及形成α-和β-C3N4必需的N-sp3C键的量的增加.C60离子辐照在注氮石墨样品中引起了ta-C、N=sp2C和N-sp3C键的形成;而高能离子辐照在注氮类金刚石薄膜样品中产生了α-和β-C3N4晶态夹杂物,其尺寸在1.4-3.6 nm之间.     

高温超导外延薄膜YBα_2Cu_3O_(7-x)中空位型缺陷的低能正电子寿命研究

利用脉冲低能正电子束系统测量了脉冲激光沉积法、磁控溅射法和多源共蒸法制备的高温超导外延薄膜ＹＢａ２Ｃｕ３Ｏ７－ｘ的低能正电子寿命谱。结果表明。除块材中普遍存在的正电子浅捕获中心外，还大量含有块材中缺乏的正电子探捕获中心，并且其尺度随温度的降低而长大。脉冲激光沉积法制备高温超导外延薄膜ＹＢａ２Ｃｕ３Ｏ７－ｘ的正电子寿命和沉积条件（衬底温度及空气分压）的关系研究表明，这种深捕获缺陷的种类与沉积条件无关，而缺陷浓度随衬底温度的降低及空气分压增高而增加     

钙钛矿型氧化物薄膜电子结构的XPS研究

用XPS和PES研究了钙肽矿型氧化物BaTiO3薄膜和La1-xSnxMnO3薄膜的电子结构。特别地,我们采用角分辨X－射线光电子谱技术（ARXPS）,研究了薄膜表面最顶层原子种类和排列状况。结果表明,BaTiO3薄膜表面最顶层TiO2原子平面,La1-xSnxMnO3薄膜的表面最顶层为MnO2原子平面。在此基础上,我们进一步在原子水平上探讨了薄膜的层状外延生长机理。     

离子束辅助沉积制备TiN/Si3N4纳米超硬膜的工艺研究

采用离子束辅助沉积法(Ion beam assisted deposition,IBAD)在单晶硅片上进行沉积制备了TiN/Si3N4纳米复合超硬薄膜;研究了辅助束流、轰击能量和Ti:Si靶面积比等工艺参数对TiN/Si3N4超硬纳米复合薄膜性能的影响.此外采用纳米硬度计、光电子能谱(X-ray photoelectron spectrum,XPS)和x射线衍射分析(X-raydiffraction,XRD)方法研究了纳米复合薄膜的性能、成分与组织结构;采用原子力显微镜(Atomic forcemicroscopy,AFM)分析了薄膜的表面形貌,并初步探讨了TiN/Si3N4纳米复合超硬薄膜的生长机理.     

K3C60光电离截面振荡

对K3±δC60多晶薄膜进行了同步辐射光电子谱研究。入射光子能量为17－86cV。实验发现K3±δC60光电子谱的HOMO－1，HOMO及LUMO等导出能带的谱峰强度均随入射光子能量的增加而呈现振荡的性质，与纯C60的光电子谱峰随入射光子能量变化的趋势相似。结果C60分子独特的笼状几何结构，认为其电离截面的变化是由于K3±δC60的末态电子在C60分子笼内形成球状驻波引起的。以驻波的边界条件为基础进行理论计算，得到的电离截面极小值对应的光子能量与实验得到的结果符合良好。     

钙钛矿型氧化物La0.9Sn0.1MnO3庞磁阻薄膜电子结构XPS研究

用XPS和同步辐射技术研究了钙钛矿型氧化物La1-xSnxMnO3薄膜的电子结构。特别地,我们采用角分辨X－射线光电子谱技术（ARXPS）,研究了薄膜表面最顶层原子种类和排列状况。结果表明,La1-xSnxMnO3薄膜的表面最顶层为MnO2原子平面。在此基础上,我们进一步在原子水平上探讨了薄膜的层状外延生长机理。     

DLC薄膜中子辐照效应

采用射频等离子体化学汽相沉积法得到了类金刚石（以下简称DLC）薄膜,并用能量为14MeV的中子对其进行辐照,辐照剂量为1.4×1012n/cm2～7.2×1012n/cm2。通过Raman及红外光谱分析得出,中子辐照造成膜中SP3C-C键的明显减少及SP2C=C键的增加,并形成少见的非晶型SP1C≡C键碳（直线型碳）,使DLC膜进一步非晶化。经辐照后的DLC薄膜红外透过率均有所提高,在实验剂量范围内,基本上与辐照剂量无关。     

Continuous compositional spread investigation of SiC-based thin films prepared by MW-ECR plasma enhanced magnetron co-sputtering

A kind of combinatorial material methodology,also known as continuous compositional spread method,was employed to investigate the relationship between the optical band gap and composition of SiC thin films.A wide range of SixCy thin films with different carbon contents have been successfully deposited in a single deposition by carefully arranging the sample position on the substrate holder.The films were characterized by surface profiler,x-ray photoelectron spectroscopy,ultraviolet-visible spectroscopy,fourier transform infrared spectroscopy and Raman spectroscopy.The carbon content y increases linearly from 0.28 to 0.72 while the sample position changed from 85 to 175 mm,the optical band gap changed between 1.27 and 1.99 eV,the maximum value corresponded to the stoichiometric SiC sample at the position of 130 mm,which has the highest Si?C bond density of 11.7×10^22 cm^-3.The C poor and C rich SixCy samples with y value less and larger than 0.5 were obtained while samples deviated from the position 130 mm,the optical band gap decreased with the Si?C bond density.     

Growth and characterization of Ge nanocrystals

We have synthesized Ge nanocrystals of mean sizes 4, 8, and 12 nm by ion-implanting Ge⁺ ions into thermally grown SiO₂ films and subsequent annealing of the films at 830°C for 30 min in nitrogen. These films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy. A distribution of particle size was identified by TEM in a 100 nm band below the surface. Particle sizes were estimated by these three techniques.     

Mechanism of high growth rate for diamond-like carbon films synthesized by helicon wave plasma chemical vapor deposition

A high growth rate fabrication of diamond-like carbon(DLC)films at room temperature was achieved by helicon wave plasma chemical vapor deposition(HWP-CVD)using Ar/CH_4gas mixtures.The microstructure and morphology of the films were characterized by Raman spectroscopy and scanning electron microscopy.The diagnosis of plasma excited by a helicon wave was measured by optical emission spectroscopy and a Langmuir probe.The mechanism of high growth rate fabrication for DLC films by HWP-CVD has been discussed.The growth rate of the DLC films reaches a maximum value of 54μm h~(-1)at the CH_4flow rate of 85 sccm,which is attributed to the higher plasma density during the helicon wave plasma discharge.The CH and H_αradicals play an important role in the growth of DLC films.The results show that the H_αradicals are beneficial to the formation and stabilization of C=C bond from sp~2to sp~3.     

Influence of N2 flow rate on structure and properties of TiBCN films prepared by multi-cathodic arc ion plating and studied with ion beam scattering spectroscopy

TiBCN films were deposited on Si(100) and cemented carbide substrates by using multi-cathodic arc ion plating in C_2H_2 and N_2atmosp~here. Their structure and mechanical properties were studied systematically under different N_2 flow rates. The results showed that the Ti BCN films were adhered well to the substrates. Rutherford backscattering sp~ectroscopy was employed to determine the relative concentration of Ti, B, C and N in the films.The chemical bonding states of the films were explored by X-ray photoelectron sp~ectroscopy, revealing the presence of bonds of Ti N, Ti(C,N), BN, pure B, sp~2C–C and sp~3C–C, which changed with the N_2 flow rate. Ti BCN films contain nanocrystals of Ti N/Ti CN and Ti B_2/Ti(B,C)embedded in an amorphous matrix consisting of amorphous BN and carbon at N_2 flow rate of up to 250 sccm.     

Synthesis of nanostructured multiphase Ti(C,N)/a-C films by a plasma focus device

Nanostructured multiphase Ti(C,N)/a-C films were deposited using a 3.3 kJ pulsed plasma focus device onto silicon (1 0 0) substrates at room temperature. The plasma focus device, fitted with solid titanium anode instead of usual hollow copper anode, was operated with nitrogen and Ar/CH₄ as the filling gas. Films were deposited with different number of shots, at 80 mm from top of the anode and at zero angular position with respect to anode axis. X-ray diffraction results show the diffraction peaks related to different compounds such as TiC₂, TiN, Ti₂CN, Ti and TiC_0.62 confirming the deposition of multiphase titanium carbo-nitride composite films on silicon. X-ray photoelectron spectroscopy confirms the formation of Ti–C, C–N, Ti–N, Ti–O and C–C bonds in the films. Scanning electron microscopy reveals that the nanostructure grains are agglomerates of smaller nanoparticles about 10–20 nm in size. Raman studies verify the formation of multiphase Ti(C,N) and also of amorphous graphite in the films. The maximum microhardness value of the composite film is 14.8 ± 1.3 GPa for 30 shots.     

用于ICF的非晶SiC微球制备及微观结构研究

以四甲基硅烷、反式二丁烯和氢气为工作气源,采用化学气相沉积-高温热解法成功制备了壁厚约21μm的非晶SiC微球。利用能量色散X射线光谱仪、X射线光电子能谱仪、X射线衍射仪、Raman光谱仪、扫描电子显微镜、白光干涉仪和X射线照相机对SiC微球的化学成分、结晶状态、表面形貌与粗糙度以及密度与球形度等进行了测量和分析。结果表明:在无氧环境下,通过450~900℃的高温热解及致密化可将在聚α甲基苯乙烯芯轴上沉积的掺硅碳氢聚合物涂层转变成致密的SiC微球。SiC微球呈非晶态,其C/Si原子比约为1.3,主要含有C—Si键和C=C键,微观结构呈无规则状且颗粒分布均匀,密度、球形度和壁厚均匀性分别为2.62 g/cm~3、99.8%和96.8%。     

Growth of Free-Standing Diamond Films on Stainless Steel

Free-standing diamond films have been successfully deposited on stainless steel substrates using microwave plasma-assisted chemical vapor deposition. Although iron, which is the main element of stainless steel, is known to inhibit the nucleation of diamond and enhance the formation of graphite, we were able to grow relatively thick films （-1.2 mm）. The films were easily detachable from the substrates. The poor adhesion made it possible to obtain free-standing diamond films without chemical etching. Raman spectroscopy showed the 1332 cm^-1 characteristic Raman peak of diamond and the 1580 cm^-1, 1350 cm^-1 bands of graphite on the growth surface and backside of the films, respectively. By energy dispersive X-ray spectroscopy it was only possible to detect iron on the back of the films, but not on the surface. The role of iron in the film growth is discussed.     

Electrical and optical properties of Co ion implanted a-Si1 − xCx:H alloys

Low resistivity a-Si_1 − xC_x:H alloy films have been formed by high dose Co⁺ ion implantation. The influence of the carbon content of the films on the resistivity has been studied and the lowest values, of the order of 10 Ω/Sq, have been observed for the carbon free films. Even lower resistivities, a further reduction of up to 50%, have resulted from annealing at temperatures up to 500°C. Changes in the optical and structural properties of the implanted a-Si_1 − xC_x:H films have been studied by means of IR and Raman spectroscopy. Results show that the implantation produces considerable structural and chemical modifications. The formation of, and the transition to, a possible CoSi₂ phase has been observed by examining the IR and Raman spectra as a function of implant dose.     

Incorporation of Nitrogen into Amorphous Carbon Films Produced by Surface-Wave Plasma Chemical Vapor Deposition

In order to study the influence of nitrogen incorporated into amorphous carbon films, nitrogenated amorphous carbon films have been deposited by using surface wave plasma chemical vapor deposition under various ratios of N2/CH4 gas flow. Optical emission spectroscopy has been used to monitor plasma features near the deposition zone. After deposition, the samples are checked by Raman spectroscopy and x-ray photo spectroscopy (XPS). Optical emission intensities of CH and N atom in the plasma are found to be enhanced with the increase in the N2/CH4 gas flow ratio, and then reach their maximums when the N2/CH4 gas flow ratio is 5%. A contrary variation is found in Raman spectra of deposited films. The intensity ratio of the D band to the G band (ID/IG) and the peak positions of the G and D bands all reach their minimums when the N2/CH4 gas flow ratio is 5%. These show that the structure of amorphous carbon films has been significantly modified by introduction of nitrogen。