大高宽比、高线密度X射线透射光栅的制作

利用电子束光刻、X射线光刻和微电镀技术,成功制作了面积为1 mm × 1 mm,周期为300 nm,金吸收体厚度为1 μm的用于X射线显微成像技术的透射光栅。首先利用电子束光刻和微电镀技术在Si3N4薄膜上制作周期为300 nm,厚度为250 nm的高线密度光栅掩模。然后利用X射线光刻和微电镀技术复制厚度为1 μm,占空比接近1：1,高宽比为7的X射线透射光栅。整个工艺流程充分利用了电子束光刻技术制作高分辨率图形和X射线光刻技术制作大高宽比结构的优点     

LIGA工艺探讨

本文叙述了适用于微型机械制造的一种新的工艺-LIGA工艺的技术组成。着重介绍了LIGA工艺中X射线光刻掩模的制作步骤和方法。     

LIGA技术基础研究

阐述了LIGA技术的组成及特点.对LIGA工艺掩膜、X射线光刻、电铸及塑铸等进行了工艺原理分析.用一次成型法制作了以聚酰亚胺为衬基、以Au为吸收体的X射线光刻掩膜.简单介绍了这种掩膜的制作工艺过程,并用这种掩膜在北京电子对撞机国家实验室进行了同步辐射X射线光刻,得到了深度为500μm,深宽比达8.3的PMMA材料的微型电磁马达联轴器结构.给出掩膜和X射线光刻照片.同时,对Au、Ni等金属材料的厚膜电铸进行了工艺研究.     

使用平行束软X光透镜的深亚微米X射线光刻

使用本实验室研制的整体平行束软X光透镜作为准直器和电子枪软X光源相配,作成了平行束软X光源,用此平行束软X光源进行了深亚微米X射线光刻实验。刻出了1.0μm～0.2μm的线条。文中对实验装置和光刻结果作了简要的介绍。     

BEPC同步辐射软X射线光刻光束线的总体设计特性

介绍我们为北京正负电子对撞机(Beijing Electron Position Collide,BEPC)同步辐射实验室建造的软X射线光刻光束线的总体设计思想,并说明其中的束线物理设计、反射镜扫描、调整机构、激光模拟光源、真空系统和电子学、微机控制等系统中的关键技术。此外,对束线中的关键器件之一的超薄铍窗(18μm厚)的耐压强度给出了与理论计算趋势相一致的实验结果。     

掩模位置误差对光刻投影物镜畸变的影响

为使光刻投影物镜满足光刻工艺的要求,研究了掩模位置误差对光刻投影物镜引入的畸变。采用勒让德多项式描述光刻投影物镜的畸变,并应用勒让德多项式对光刻投影物镜进行了畸变分析及畸变补偿。利用以上方法,对一台工作波长为193 nm,数值孔径(NA)为0.75的光刻投影物镜进行了畸变分析。结果显示:当掩模面3个方向的平移公差为1.0μm,绕3个轴的转动公差为0.1 mrad时,光刻投影物镜标定前后的畸变分别为2 113.2 nm和10.0 nm。利用勒让德多项式进行了畸变拟合,获得了多项式中各项系数,并给出掩模面位置误差的畸变敏感度系数;然后利用畸变敏感度系数对掩模面的随机位置误差进行了公差分析和补偿。结果表明,将光刻投影物镜畸变控制在2 nm以内时,掩模面z方向的位置公差为±2.0μm,掩模面与x轴与y轴的倾斜公差分别为±22.3μmad和±55.3μmad。实验结果证明提出的方法适用于对掩模面引入的光刻投影物镜畸变进行有效分析及补偿。     

软X射线投影光刻原理装置的设计

首先介绍了投影光刻技术发展的历程、趋势和软X射线投影光刻技术的特性,其次介绍了软X射线投影光刻原理装置的研制工作.该装置由激光等离子体光源、掠入射椭球聚光镜、透射掩模、镀有多层膜的Schwarzchild微缩投影物镜、涂有光刻胶的硅片及相应的真空系统组成.0.1倍的Schwarzchild微缩投影物镜具有小于0.2μm的分辨率.     

超精密掩模台位移测量系统热漂移研究

针对28nm浸没式扫描光刻机掩模台的光栅干涉仪位移测量系统,开展了系统热漂移研究,并进行了热漂移测试实验与结果分析。该位移测量系统采用外差对称式四细分的光路设计以及栅距为1μm的二维光栅,配合2048倍电子细分的相位计数卡,其系统分辨力达到了0.12nm。热漂移测试结果显示:该系统的热漂移X向为17.86nm/K,Y向为41.43nm/K。在光刻机掩模台的实际测量环境中,测量环境的温度波动稳定在5mK以内,此时系统的热漂移X向可以控制在0.09nm以内,Y向可以控制在0.21nm以内。实验数据表明系统的热漂移误差小于1nm,满足掩模台亚纳米位移测量精度需求。     

PMMA材料制作X射线组合透镜技术研究

给出了基于衍射理论的评价X射线聚焦组合透镜三维聚焦性能的理论方法.利用该理论方法分析得出X射线组合透镜的聚焦性能与透镜的工作波长、透镜材料、单元透镜数量及凹面半径等参数之间的关系.用LIGA技术中的软X射线光刻方法制作了PMMA材料X射线组合透镜.该组合透镜由40个平凹折射单元依次排列而成,相邻的两透镜单元彼此相切,凹面半径分别为200 μm,400 μm,500 μm,600 μm,700 μm.此外,X射线组合透镜的表面粗糙度测试结果表明,粗糙度均方根值小于50 nm.     

用于飞秒激光制备光纤光栅的相位掩模研制

利用严格耦合波理论分析了用于520 nm波长飞秒激光制备光纤光栅的相位掩模的衍射特性,当相位掩模是矩形槽形时,占宽比在0.32~0.43之间,槽形深度在0.57~0.67μm之间时,能够保证零级衍射效率抑制在2%以内,同时±1级的衍射效率大于35%。在此基础上,利用全息光刻-离子束刻蚀技术,制作了用于520 nm波长飞秒激光的周期为1067 nm、有效面积大于40 mm×30 mm的相位掩模。实际制作的相位掩模是梯形槽形,槽深是0.665μm,分析了梯形槽形中梯形角对衍射效率的影响。实验测量表明,该相位掩模的零级衍射效率小于2%,±1级衍射效率大于40%,满足飞秒激光制作光纤光栅的需要。     

Research and Application of MEMS Technique at BSRF

LIGA technique has been developed since 1993 at BSRF, including the fabrication of LIGA mask, deep X-ray lithography, electroplating, the pouring molding and the applications in some fields. The LIGA mask with gold absorbing structures of 20μm thickness and 5μm width and Kapton membrane of around 5μm thickness has been successfully fabricated and applied to the deep X-ray lithography with the PMMA structure of 1mm thickness or above. The beamline from a wiggler is used for the deep X-ray lithography of LIGA station and is open to other institutes researching the deep X-ray lithography. The normal process of LIGA technique with the exception of molding has been established with the PMMA structures of 500μm thickness at BSRF. The largest aspect ratio of PMMA structures can reach about 50 with the height of 500μm and the lateral size of 10μm. The nickel and copper structures with the thickness of 0.5mm and 1mm have been made by using the electroplating technique. The SU8 as a resist material of deep etch lithography with UV light is also developed in the fabrication of LIGA mask and some devices at BSRF. Electromagnetic stepping micro motor, heat exchange, accelerator, structures used in the EDM (electro discharge machining) are being developed for the future applications.     

Imprinting a needle array on a polycarbonate substrate

A micro-needle array was fabricated on a polycarbonate (PC) substrate using an electroformed-Ni mold with a conical concave pattern. The diameter and length of each needle were 50 μm and 135 μm, respectively. The needle array pattern of the electroformed-Ni mold was produced by combining a grayscale mask for X-ray lithography with Ni electroforming technology. The X-ray grayscale mask was composed of Si absorbers and a SU-8 membrane. Each Si absorber had a three-dimensional cone shape rather than a rectangular shape. Threedimensional Si structures were formed to etch an active Si layer in a silicon-on-insulator wafer using a taperedtrench etching technology. Beamline BL-4 in the TERAS synchrotron radiation facility at AIST was used for the Xray lithography experiments. X-rays that penetrated the X-ray grayscale mask irradiated a polymethylmethacrylate (PMMA) sheet. Pt was deposited on the PMMA structure after developing, and Ni was electroformed on it. The electroformed-Ni object was processed by grinding to complete a Ni mold. Finally, the micro-needle array was fabricated by thermal-imprinting on a 0.5-mm thick PC sheet with the electroformed Ni mold.     

大面积软X射线自支撑金透射光栅的研制

针对等离子体诊断及空间环境探测等领域对软X射线透射光栅的需要,采用全息光刻和微电镀技术制作了自支撑软X射线金透射光栅.在基底与光刻胶之间增加减反膜层以降低高反射基底引起的驻波效应对掩模槽形的影响,使用全息光刻技术获得了侧壁陡直的光栅掩模.然后,在掩模顶部镀保护层并使用反应离子刻蚀获得电镀掩模,通过改变保护层厚度来调节电...     

X光光刻工艺微针阵列的制备、测试和仿真

为了提高透皮给药的效率,降低传统注射对人体的疼痛感,需要制备微针阵列结构。本文介绍了一种新的微针阵列结构的制造技术。利用日本立命馆大学的同步辐射光源AURORA进行两次X光移动光刻和一次固定X光光刻技术,在PMMA光刻胶上得到微针阵列。通过采用不同的掩膜版图形以及对不同位置的空心孔进行X光光刻,获得了不同规格的空心微针阵列,针对固定X光光刻时对准的问题,自行研制了X光光刻对准装置,实验结果证明,该装置能实现空心微针阵列的制备。并且进行了微针刺穿测试,结果证明微针有足够的强度。为了达到低成本批量复制微针阵列的目的,还进行了微针模具的倒模和复制实验,成功得到金属镍实心微针阵列。最后,针对光刻过程中微针阵列结构的侧面形状发生畸变的情况,对移动X光光刻建立了仿真预测,将仿真预测结果与实验结果进行了比较,结果表明显影深度的误差为5%。     

LIGA技术中的X射线掩膜

ＬＩＧＡ工艺技术包括光刻、电铸和塑铸３个重要环节。而深层同步辐射光必掩膜技术是Ｘ射线光刻应用的关键之一。我们采用聚酰亚胺为衬基，以电铸金结构为吸收体，制作出了Ｘ射线掩膜，并进行了深层同步辐射Ｘ射线光刻实验研究。     

动态目标发生器圆鼓图形光刻掩模板的研制

本文详细论述了动态目标发生器圆鼓图形光学刻划掩模板的设计思想及其制作过程,经试刻效果良好.为非球面光刻掩模板的制作开创了一条新途径.     

Current Status of Extreme Ultraviolet Lithography in Japan

ASET, Association of Super- advanced Electronics Technologies, has been taking the initiative in developing EUV lithography technology in Japan for the past three years. The aspherical mirror metrology using a visible light point diffraction interferometer (PDI), the wave-front measurement using an at - wavelength PDI, and an at-wavelength reflectometry for multilayers, various imaging simulations, multilayer coatings for the mask, the development of absorber materials for mask patterning, the mask substrate cleaning technique, and various photoresist processes have been developed. The visible light PDI employs a 0.5 -μm pinhole as an aperture to generate an ideal spherical wave-front and can measure a 0.3 - N A mirror maximum. The at - wavelength PDI can measure the wave-front error of the projection optics. The at- wavelength reflectometer can measure the reflectivity of multilayers and the round - robin test is taking place among ASET, the ALS in Lawrence Berkeley, and BESSY in Germany.The mask cleaning technique employs a supersonic hydro- cleaning technique. We have confirmed that the single layer resists can be used for EUV lithography.     

Synchrotron Radiation Lithography and MEMS Technique at NSRL

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