Colossal dielectric response and relaxation behavior in novel system of Zr4+ and Nb5+ co-substituted CaCu3Ti4O12 ceramics

In this work, we developed a novel system of isovalent Zr⁴⁺ and donor Nb⁵⁺ co-doped CaCu₃Ti₄O₁₂ (CCTO) ceramics to enhance dielectric response. The influences of Zr⁴⁺ and Nb⁵⁺ co-substituting on the colossal dielectric response and relaxation behavior of the CCTO ceramics fabricated by a conventional solid-phase synthesis method were investigated methodically. Co-doping of Zr⁴⁺ and Nb⁵⁺ ions leads to a significant reduction in grain size for the CCTO ceramics sintered at 1060 °C for 10 h. XRD and Raman results of the CaCu₃Ti_3.8-xZr_xNb_0.2O₁₂ (CCTZNO) ceramics show a cubic perovskite structure with space group Im-3. The first principle calculation result exhibits a better thermodynamic stability of the CCTO structure co-doped with Zr⁴⁺ and Nb⁵⁺ ions than that of single-doped with Zr⁴⁺ or Nb⁵⁺ ion. Interestingly, the CCTZNO ceramics exhibit greatly improved dielectric constant (~10⁵) at a frequency range of 10²–10⁵ Hz and at a temperature range of 20–210 °C, indicating a giant dielectric response within broader frequency and temperature ranges. The dielectric properties of CCTZNO ceramics were analyzed from the viewpoints of defect-dipole effect and internal barrier layer capacitance (IBLC) model. Accordingly, the immensely enhanced dielectric response is primarily ascribed to the complex defect dipoles associated with oxygen vacancies by co-doping Zr⁴⁺ and Nb⁵⁺ ions into CCTO structure. In addition, the obvious dielectric relaxation behavior has been found in CCTZNO ceramics, and the relaxation process in middle frequency regions is attributed to the grain boundary response confirmed by complex impedance spectroscopy and electric modulus.     

超宽带大功率合成器设计北大核心CSCD

在80 MHz~1 GHz频段,单个功率管输出功率能达到100 W以上,为研制输出功率400 W的功率放大器,文中设计了四路功率合成器。该合成器需要实现功率容量大、工作频带宽、体积小的设计目标。在功率容量方面,文中采用悬置带状线结构,其功率容量远远大于微带线结构;在工作频带方面,采用切比雪夫九节阻抗变换器,将工作带宽拓宽为80 MHz~1 GHz;在体积方面,文中合成器的功率合成部分采用Y型节级联实现四路功率合成,阻抗变换部分采用切比雪夫阻抗变换器进行阻抗变换,该结构相较于磁环巴伦功率合成器,不但具有损耗小、平坦度高的优点,而且通过将阻抗变换器设计成曲折的形状,进一步缩小了合成器体积。仿真与实测结果显示该合成器在80 MHz~1 GHz范围内还具有较高的平坦度,合成效率可达90%以上。     

Electrical and magnetic properties of double perovskite: Y2CoMnO6

In this communication, the structural, micro-structural, dielectric, electrical, magnetic, and leakage-current characteristics of a double perovskite (Y₂CoMnO₆) ceramic material have been reported. The material was synthesized via a high-temperature mixed-oxide route. The compound crystallizes in a monoclinic structure which is confirmed from preliminary X-ray structural study. The morphological study by using scanning electron micrograph reveals the almost homogeneous distribution of grains throughout the surface of the sample. The nature of frequency-dependence of dielectric constant has been described by the Maxwell-Wagner model. The occurrence of a dielectric anomaly in the temperature dependence of dielectric permittivity study demonstrates the ferroelectric-paraelectric phase transition in the material. From the Nyquist plots, we found the existence of both grain and grain boundary effects. The frequency dependence of conductivity was studied by the Jonscher’s Power law, and the conduction phenomenon obeys the large overlapping polaron tunneling model. By using the Arrhenius equation, the activation energy has been calculated which is nearly equal to the energy required for the hoping of the electron. Both impedance and conductivity analysis demonstrate that the sample exhibits negative temperature coefficient of resistance (NTCR) properties indicating the semiconducting type of material at high temperatures. The anti-ferromagnetic character of the material is observed from the nature of magnetic hysteresis loop. The leakage current analysis suggests that the conduction process in the material follows the space charge limited conduction phenomenon. Such material will be helpful for modern electronic devices and spintronic applications.     

基于PBFT区块链技术的电网企业仓储系统

提出了一种基于实用拜占庭容错(PBFT)算法的区块链技术,首先对传统的实用拜占庭容错算法原理进行了阐述,该传统算法包含前期、需求、预准备、准备、确认、答复6个阶段,但传统算法具有实时性差、缺乏惩罚机制、带宽高的缺点。针对出现的这些问题,又对传统算法进行了改进,具体涉及记账节点、共识过程以及视图切换过程。通过测试进一步证明了该改进算法的实用性,并将该算法应用于电网企业中,构建的虚拟仓库实现了联储联备,降低了库存资金的耗费,并且提高了电网企业库存管理的效率。     

Deep reinforcement learning-based cooperative interactions among heterogeneous vehicular networks

Most real-world vehicle nodes can be structured into an interconnected network of vehicles. Through structuring these services and vehicle device interactions into multiple types, such internet of vehicles becomes multidimensional heterogeneous overlay networks. The heterogeneousness of the overlays makes it difficult for the overlay networks to coordinate with each other to improve their performance. Therefore, it poses an interesting but critical challenge to the effective analysis of heterogeneous virtual vehicular networks. A variety of virtual vehicular networks can be easily deployed onto the native network by applying the concept of SDN (Software Defined Networking). These virtual networks reflect their heterogeneousness due to their different performance goals, and they compete for the same physical resources of the underlying network, so that a sub-optimal performance of the virtual networks may be achieved. Therefore, we propose a Deep Reinforcement Learning (DRL) approach to make the virtual networks cooperate with each other through the SDN controller. A cooperative solution based on the asymmetric Nash bargaining is proposed for co-existing virtual networks to improve their performance. Moreover, the Markov Chain model and DRL resolution are introduced to leverage the heterogeneous performance goals of virtual networks. The implementation of the approach is introduced, and simulation results confirm the performance improvement of the latency sensitive, loss-rate sensitive and throughput sensitive heterogeneous vehicular networks using our cooperative solution.     

云杉八齿小蠹Ips typographus L.虚拟模型构建方法研究

本文以云杉八齿小蠹Ips typographus Linnaeus为例,经标本选取,观察虫体整体形态,绘制整体结构草图,电子显微镜观察局部、得到局部数字图像,分别建立虫体每一部分的高精度细节。把模型每部分拼装在一起组成整体模型,构建出了云杉八齿小蠹三维虚拟昆虫数字化模型。     

基于信号增强的缓慢泄漏检测方法

目前管道泄漏检测方法可有效检测突发泄漏，对于缓慢泄漏则存在检测灵敏度低、定位不准确等问题。基于此，提出了一种基于信号增强的缓慢泄漏检测方法。通过信号压缩（抽取及移位）克服缓慢泄漏压力信号下降平缓的缺点；根据声波信号具有波形尖锐突出、对突发泄漏敏感的优点，通过建立以压力为输入、虚拟声波为输出的声波信号变送器模型，将压力信号转换为声波信号，克服了泄漏压力信号容易被淹没在管道压力波动及背景噪声中的缺点，实现了缓慢泄漏信号的增强；利用临近插值方法重构虚拟声波信号，基于延时互相关分析实现了缓慢泄漏的准确定位。实验结果表明，该方法具有显著的信号增强效果和定位精度，实现了缓慢泄漏的准确检测。     

Knowledge-Based Virtual Modeling and Simulation of Manufacturing Processes for Industry 4.0

Abstract

Industry 4.0 aims at providing a digital representation of a production landscape, but the challenges in building, maintaining, optimizing, and evolving digital models in inter-organizational production chains have not been identified yet in a systematic manner. In this paper, various Industry 4.0 research and technical challenges are addressed, and their present scenario is discussed. Moreover, in this article, the novel concept of developing experience-based virtual models of engineering entities, process, and the factory is presented. These models of production units, processes, and procedures are accomplished by virtual engineering object (VEO), virtual engineering process (VEP), and virtual engineering factory (VEF), using the knowledge representation technique of Decisional DNA. This blend of the virtual and physical domains permits monitoring of systems and analysis of data to foresee problems before they occur, develop new opportunities, prevent downtime, and even plan for the future by using simulations. Furthermore, the proposed virtual model concept not only has the capability of Query Processing and Data Integration for Industrial Data but also real-time visualization of data stream processing.     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.