低压静电场辅助冷冻对竹笋品质的影响

为研究低压静电场辅助冷冻对竹笋冻结特性的影响，以冻结曲线、硬度、水分损失率、水分迁移、冰晶形态和组织微观结构为指标，探究低压静电场辅助冷冻（－35 ℃）和普通冷冻（－35 ℃）条件下竹笋品质的变化规律。结果表明：低压静电场辅助冷冻提高了冻结效率，改变了冰晶形态及分布，减轻了组织微观结构破损程度，改善了解冻汁液流失情况。与静电板间距10、20、30、40 cm处的冷冻竹笋解冻后水分损失率分别为14.16%、12.58%、9.73%、10.44%，显著低于对照组（21.01%）（P＜0.05），硬度分别为461.19、507.48、496.65 g和455.31 g，显著高于对照组（350.70 g）（P＜0.05）。低场核磁共振分析结果表明，在低压静电场辅助冷冻下竹笋解冻后汁液流失减少，扫描电子显微镜观察结果显示，竹笋纤维排列整齐，组织微观结构保持较好。低压静电场辅助冷冻可有效改善竹笋品质，可为利用低压静电场进行果蔬的冷冻贮藏和冷链运输提供参考。     

Centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates using a femtosecond laser with square-shaped Flat-Top focus spots

Femtosecond (fs) lasers have been proved to be reliable tools for high-precision and high-quality micromachining of ceramic materials. Nevertheless, fs laser processing using a single-mode beam with a Gaussian intensity distribution is difficult to obtain large-area flat and uniform processed surfaces. In this study, we utilize a customized diffractive optical element (DOE) to redistribute the laser pulse energy from Gaussian to square-shaped Flat-Top profile to realize centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates. We systematically investigated the effects of processing parameters on the changes in surface morphology and composition, and an optimal processing strategy was provided. Mechanisms of the formation of surface nanoparticles and the removal of surface micro-burrs were discussed. We also examined the distribution of subsurface defects caused by fs laser processing by removing a thin surface layer with a certain depth through chemical mechanical polishing (CMP). Our results show that laser-induced periodic surface structures (LIPSSs) covered by fine SiO₂ nanoparticles form on the fs laser-processed areas. Under optimal parameters, the redeposition of SiO₂ nanoparticles can be minimized, and the surface roughness Sa of processed areas reaches 120 ± 8 nm after the removal of a 10 μm thick surface layer. After the laser processing, micro-burrs on original surfaces are effectively removed, and thus the average profile roughness Rz of 2 mm long surface profiles decreases from 920 ± 120 nm to 286 ± 90 nm. No visible micro-pits can be found after removing ~1 μm thick surface layer from the laser-processed substrates.     

柠条的纤维特性及其双螺杆CMP制浆性能研究

以柠条为原料，分析了其化学组分和纤维形态，并探讨了柠条双螺杆CMP法的制浆工艺以及浆料的纤维形态和成纸的物理性能。研究结果表明：与针、阔叶木相比，柠条原料中纤维素和综纤维素质量分数较低，苯醇抽出物和热水抽出物质量分数较高，柠条纤维长度总体偏短，木质部和皮部的纤维质量平均长度分别为0.621和0.819 mm，还存在部分杂细胞。采用3.5% Na₂SO₃和1.5% NaOH常温预浸12 h、90℃汽蒸1 h后再用双螺杆挤浆机在质量分数35%下进行搓丝，并结合高浓盘磨机磨浆，所得CMP浆得率可达73%。柠条CMP浆基本保持了纤维原有的长度，质量平均长度达0.650 mm，长宽比为32.7，纤维解离较好，但分丝帚化情况不理想，含有部分纤维束和杂细胞。当加拿大游离度为300 mL时，柠条CMP浆成纸的环压强度指数和松厚度较高，分别为8.67（N·m）/g和2.56 cm³/g，抗张指数为19.6（N·m）/g，本色浆白度较高，达50%（ISO）。柠条CMP浆适合配抄瓦楞原纸等包装用纸，漂白后可配抄新闻纸和白板纸。     

Bamboo biochar-catalytic degradation of lignin under microwave heating

Abstract

Lignin biochar-catalytic depolymerization using biochar Fe-600, Fe-800, Ni-600, Ni-800 catalysts under microwave-heating (180?°C for 30?min) was explored in an ethanol/formic acid (1:1) media. Non-catalyst depolymerization was also studied and compared with the biochar-catalysts results. Characteristics of the bio-char catalysts were analyze by BET, XRD, and FT-IR. GPC, FT-IR, and MALDI-TOF MS spectrometry were also used to characterize the depolymerization products. The experimental results showed that the S_BET, V_t, and V_mec and average pore diameter of the biochars are considerably dependent on the preparation temperature and type of cation (Ni²⁺ or Fe³⁺). The maximum yield of bio-oil product was obtained as 85?wt% with the addition of biochar Ni-600 and the total amount of oligomers or monomers with a molecular weight of 164 to 446 reaches 80.4%.     

动态高压微射流处理对方竹笋膳食纤维理化及结构特性的影响

以方竹笋中提取的膳食纤维为研究对象，采用动态高压微射流（dynamic high-pressure micro-fluidization, DHPM）在不同压力条件（0，50，100，150，200 MPa）下进行处理，探究其对竹笋膳食纤维（bamboo shoots dietary fiber, BSDF）理化和结构特性的影响。结果表明，随着处理压力的增大，BSDF粒径先增大后减小，当处理压力为150 MPa时，粒径最小，为（370±11） nm，此条件下BSDF的持水力、持油力和膨胀力达到最大，较对照组分别提高了47.74%，50.54%，61.27%，且差异显著（P<0.05）。红外光谱分析表明DHPM处理不会改变BSDF的官能团，但会使BSDF内部的部分氢键断裂和半纤维素、木质素等发生降解；X射线衍射和热重分析表明DHPM处理不会引起BSDF的晶体结构改变，但晶体有序度会下降，进而导致其热稳定性降低；微观结构分析显示DHPM处理会使BSDF颗粒尺寸减小、表面粗糙、组织松散，且当处理压力为200 MPa时，颗粒发生团聚。综上，DHPM可以有效改善BSDF的理化性质，在膳食纤维改性方面具有一定的应用价值。     

CLBO晶体化学机械抛光技术的研究

介绍了硼酸锂铯(CLBO)晶体的应用前景及在化学机械抛光过程中存在的问题,简要分析了晶体在常温下开裂的机理,选用无水溶剂对晶体进行化学机械抛光以防止加工过程中晶体的潮解开裂。分析了抛光液、压力、温度、pH值参数对抛光过程的影响,通过合适配比使速率可达1.5～2μm/min,且表面质量较好。     

CMP系统技术与市场

概述了CMP系统技术的发展历史、发展趋势以及在IC生产中的重要性,介绍了国外CMP设备主要制造厂家的设备型号和性能及CMP设备市场分布和需求,阐述了CMP系统技术的基础研究、关键技术和国内研究概况。     

Characterization and optimization of copper chemical mechanical planarization

The feature scale planarization of the copper chemical mechanical planarization (CMP) process has been characterized for two copper processes using Hitachi 430-TU/Hitachi T605 and Cabot 5001/Arch Cu10K consumables. The first process is an example of an abrasive-free polish with a high-selectivity barrier slurry, while the second is an example of a conventional abrasive slurry with a low-selectivity barrier slurry. Copper fill planarization has been characterized for structures with conformal deposition as well as with bumps resulting from bottom-up fill. Dishing and erosion were characterized for several structures after clearing. The abrasive-free polish resulted in low sensitivity to overpolish and low saturation levels for dishing and erosion. Consequently, this demonstrated superior performance when compared to the International Technology Roadmap for Semiconductors (ITRS) 2000 roadmap targets for planarization. While the conventional slurry could achieve the 0.13-μm technology node requirements, the abrasive-free polish met the planarization requirements beyond the 0.10-μm technology node.     

Chemical mechanical polishing of polymer films

Strategies to reduce capacitance effects associated with shrinking integrated circuit (IC) design rules include incorporating low resistivity metals and insulators with low dielectric values, or “low-κ” materials. Using such materials in current IC fabrication schemes necessitates the development of reliable chemical mechanical polishing (CMP) processes and process consumables tailored for them. Here we present results of CMP experiments performed on FLARE™ 2.0 using a specialized zirconium oxide (ZrO₂) polishing slurry. FLARE™ 2.0 is a poly(arylene) ether from AlliedSignal, Inc. with a nominal dielectric constant of 2.8. In addition, we provide insight into possible removal mechanisms during the CMP of organic polymers by examining the performance of numerous abrasive slurries. Although specific to a limited number of polymers, the authors suggest that the information presented in this paper is relevant to the CMP performance of many polymer dielectric materials.     

用于铜的化学机械抛光液的研究

文中介绍了一种以碱性抛光液对铜进行全局平面化的方法 ,讨论了以 Si O2 水溶胶为磨料的抛光液在Cu-CMP过程中的化学 (络合 )作用及反应机理 ,并给出了抛光液的配比及上机实验结果。结果表明 :该抛光液用于对带有阻挡层和介质层的铜抛光 ,达到了对铜层的高去除速率和高选择比 ,取得了较好的全局平面化效果