基于改进FV-LBM的多孔介质渗流模拟

提出了一种新的基于Brimman -Forchheimer方程的多孔介质流动格子Boltzmann法的有限体积形式（FV-LBM）。在该方法中,多孔介质效应通过将外力引入格子Boltzmann方程中,并通过以单元为中心的有限体积法求解,同时将权重的校正因子引入进来以提高数值计算的稳定性。用该方法验证了完全多孔Poiseuille流和Couette流,数值计算结果与理论解吻合较好。而且还用该方法模拟了具有均匀和非均匀孔隙度的裂隙-孔隙模型,结果表明：当达西数增加时,多孔层中的速度增加;而当裂隙区域的速度峰值减小时,速度轮廓接近抛物线。研究成果为多孔介质渗流模拟提供了有效途径。     

基于地理信息系统的区域水环境承载力评价

掌握区域水环境承载力(WECC)对可持续发展政策的制定具有重要意义。针对恩施州的水环境现状,综合选取社会-资源环境-经济系统下的15个评价指标,构建水环境承载力评价指标体系。结合地理信息系统(GIS)空间分析功能,采用离差平方和组合赋权法对各指标的主、客观权重进行综合赋权,在GIS中将各指标进行栅格化处理并进行赋权叠加,得到2017年恩施州水环境承载力的量化值和水环境承载状态的空间分布图。结果表明,恩施州整体水环境承载力属一般水平,水环境承载力为优、良、一般、较差和差5个等级的面积比例分别为1.23%,27.24%,42.62%,19.17%,9.74%;其中来凤、宣恩、鹤峰3县水环境承载力最高,建始、巴东、咸丰3县水环境承载力稍次,利川市和恩施市的水环境承载力最差。研究成果可为恩施州可持续发展政策的制定提供指导。     

层合复合材料簧片单元弯曲力学性能

为提高空间可展铰链的运行稳定性和可靠性,减轻结构质量,研究了碳纤维增强层合复合材料簧片单元的弯曲性能.以衡量簧片驱动能力的应变能、稳态弯矩以及簧片自锁能力的屈曲临界弯矩为力学性能指标.分析了可折叠自展开的簧片单元在弯曲折叠过程中,复合材料铺层角度、铺层厚度和簧片截面半径对各性能指标的影响.研究结果表明:随着复合材料铺层角度的增加,簧片驱动能力增强,但其自锁能力基本不变;随着复合材料铺层厚度和截面半径的增加,簧片的驱动能力和自锁能力均增强;随着材料铺层角度、截面半径的增加,簧片的横截面出现截面变形现象且伴随微小回弹.研究结果对于空间簧片式铰链驱动性能的改进具有一定的参考价值.     

指挥信息系统双层耦合网络模型级联失效研究

针对指挥信息系统级联失效研究中存在的结构建模简单和攻击方式单一的不足,提出指挥信息系统双层耦合网络模型,在此基础上设置不同的攻击方式,分析系统的级联失效特性.首先,根据指挥信息系统体系结构和层级网络理论,构建了由通信网络和功能网络构成的双层耦合网络模型,并提出节点重要度指标;其次,设置实体打击、赛博攻击和混合攻击三种攻击方式,以及不同的攻击强度对指挥信息系统进行攻击,分析其级联失效机理;最后,仿真分析表明,双层耦合网络模型能够反映指挥信息系统的结构特征,基于该模型能够分析指挥信息系统在多种攻击方式和攻击强度下的级联失效特性.     

Reaction mechanism and microstructure evolution of reaction sintered <Emphasis Type="Italic">h</Emphasis>-BN

Hexagonal boron nitride ceramic (h-BN) based on the nitridation of B powders was obtained by reaction sintering method. The effects of sintering temperature on the mechanical properties and microstructure of the resultant products were investigated and the reaction mechanism was discussed. Results showed that the reaction between B and N₂ occurred vigorously at temperatures ranging from 1 000 °C to 1 300 °C, which resulted in the generation of t-BN. When the temperature exceeded 1 450 °C, transformation from t-BN to h-BN began to occur. As the sintering temperature increased, the spherical particles of t-BN gradually transformed into fine sheet particles of h-BN. These particles subsequently displayed a compact arrangement to achieve a more uniform microstructure, thereby increasing the strength.     

Photocatalytic activity of porous magnesium oxychloride cement combined with AC/TiO<Subscript>2</Subscript> composites

As a decorative material, magnesium oxychloride cement was used as a photocatalyst supporter to purify the pollutants indoors. Due to excellent adsorption properties of activated carbon (AC), the photocatalytic composties, TiO₂/AC, were prepared and introduced into the porous magnesium oxychloride cement (PMOC) substrate to composite a sort of photocatalytic cementitious material (PCM). The optimal composite processes were assessed by gas chromatograph, using toluene as the target. By comparing the perspective of toluene purification and thorough decomposition, it can be found that the optimal mass ratio for TiO₂/AC composites is 4/25, and the heat treatment to TiO₂/AC sample at 350 °C can play the optimal synergetic role of adsorbents in photocatalytic process. The synergistic effect of TiO₂, AC and magnesium oxychloride cement (MOC) was also evaluated by gas chromatograph. One-take molding process was adopted to introduce the TiO₂/AC into PMOC substrate, and its optimal mass fraction was 4 wt%, while the appropriate density of substrate was 0.35 g/cm3. Toluene degradation showed that the prepared PCM can degrade pollutants efficiently. The appropriate treatment process of TiO₂/AC, mass of TiO₂/AC, substrate density, and stable pore structure should be coordinated to maximize the adsorption-photodegradation performance. The combination of photocatalytic materials, adsorbents, and building materials provided a new idea for the application of photocatalysis.     

Proton irradiation damage mechanism of the InAlAs／InGaAs／InAlAs quantum well

InP-based high electron mobility transistors (HEMT) have shown a great potential for national defense and satellite radar in space radiation environment applications. This paper studies the proton radiation damage mechanism of its critical structure InAlAs／InGaAs／InAlAs quantum well. The proton projection range and vacancy defect information are obtained at different incident proton energies of 50keV, 75keV and 200keV by SRIM software. With the increase of proton energy, the proton injection depth is increasing and eventually protons pass through the material layers. Besides, the proton radiation induced vacancy defects numbers around hetero-junction increase first and decrease subsequently, and As vacancies are the main proton radiation induced defects. In addition, non-ionizing energy loss (NIEL) of In_0.52Al_0.48As and In_0.53Ga_0.47As material is computed under different incident proton energies by the analytical model. The change trend of NIEL is identical to the induced vacancy numbers, namely, NIEL first increases and then decreases as the incident proton energy increases. Finally the degrading effect of the radiation-induced As defect is detected in the two-dimensional electron gas in the quantum well, which confirms that the major proton radiation damage mechanism of the quantum well is the induced vacancy defects by NIEL.     

Growth and characterization of indium doped zinc oxide films sputtered from powder targets

Indium doped Zn O films were grown on quartz glass substrates by radio frequency magnetron sputtering from powder targets. Indium content in the targets varied from 1at% to 9at%. In doping on the structure, optical and electrical properties of Zn O thin films were studied. X-ray diffraction shows that all the films are hexagonal wurtzite with c-axis perpendicular to the substrates. There is a positive strain in the films and it increases with indium content. All the films show a high transmittance of 86% in the visible light region. Undoped Zn O thin film exhibits a high transmittance in the near infrared region. The transmittance of indium doped Zn O thin films decreases sharply in the near infrared region, and a cut-off wavelength can be found. The lowest resistivity of 4.3×10~(-4) Ω·cm and the highest carrier concentration of 1.86×10~(21) cm~(-3) can be obtained from Zn O thin films with an indium content of 5at% in the target.     

Estimation of access failure probability in D2D underlaid cellular networks

Device-to-Device (D2D) communication can reduce the mobile devices' energy consumption and increase the spectral efficiency in D2D underlaid cellular networks. However, D2D users will interfere with co-channel cellular users, which can lead to cellular communication access failures. There are two reasons for cellular communication access failures: (1)D2D interference and (2)insufficient spectrum resources. To address the absence of research on the performance of cellular services' access in D2D underlaid cellular networks, this paper defines the new services' access failure probability and handoff services' access failure probability to evaluate the effect of both D2D interference and limited resources on cellular communication access. Based on the stochastic geometry and stochastic process, a random network model is presented to estimate the access failure probabilities, which can provide guidelines for network design to ensure cellular services' access. The accuracy of the estimated access failure probability is validated through extensive simulations.     

Interface trap effect on the transient characteristics of a photovoltaic InSb infrared detector

The transient characteristics can be significantly affected by the interface trap. In order to reveal the intrinsic mechanism and provide some references for the design of detectors, the interface trap effect on the transient characteristics of a back-illuminated photovoltaic InSb infrared detector is studied with two-dimensional simulations. The relationships between interface traps and some key physical parameters, such as the hole concentration, the recombination rate and the electric field, are analyzed to reveal the intrinsic mechanisms of the influence of the interface traps on the transient characteristics. Studies show that with the increase of the interface trap density, the recombination rate and the electric field near the interface increase, the hole concentration decreases, and the “black holes” in current density distribution appear and move forward to the pn junction. And the transient photoresponse decreases with the increase of the interface trap density.