床温及SNCR脱硝对CFB锅炉NOx和N2O排放影响的试验研究

为了研究循环流化床（CFB）锅炉燃用无烟煤时床温及选择性非催化还原（SNCR）脱硝对于NO和N2O排放的影响，在1 MW CFB试验装置上开展了试验研究。结果表明:床温由880 ℃提高到970 ℃，NO排放质量浓度由119.5 mg/m3上升到226.0 mg/m3，N2O排放质量浓度由216.0 mg/m3降低到102.2 mg/m3；在氨氮摩尔比（NSR）为0~3.7之间，随着NSR的提高，脱硝效率从0上升到50.72%；进一步提高NSR到5.2，脱硝效率升至53.61%，增加较为缓慢；随着NSR从0提高到1.7，N2O排放质量浓度由84.3 mg/m3上升至118.3 mg/m3，增长较为缓慢；进一步提高NSR至2.0，N2O排放质量浓度上升至187.7 mg/m3，增长速度提高；继续提高NSR至5.2，N2O排放质量浓度上升至381.4 mg/m3；CFB锅炉采用以尿素为还原剂的SNCR脱硝工艺时，单纯通过加大NSR来提高脱硝效率不仅效果有限，过量喷入的还原剂会造成N2O排放量的显著提高。     

蛋类礼盒包装结构的缓冲性能研究

目的研究蛋类礼盒包装结构的缓冲性能。方法以蛋类尺寸为基础,建立可发性聚乙烯(expandable polyethylene. EPE)缓冲单元结构和组合结构,进行静态仿真分析和实验验证,比较结构在形状、叠合层数、组合形式等参数变化时的载荷与位移。结果结构层数变化相同时,单元结构的极限载荷从143N增加到236 N,组合结构的极限载荷从224 N增加到476 N,均呈近线性增长。结论蛋类礼盒包装中,组合结构的承载能力优于单元结构,通过单元结构的组合,可满足不同蛋类的包装要求。     

干巴菌多糖提取工艺优化及抗氧化活性的研究

以产于云南曲靖的干巴菌为原料,以多糖提取率为评价指标,采用单因素实验及正交实验优化干巴菌多糖的提取工艺,通过测定干巴菌多糖对DPPH自由基及羟基自由基的清除率来评价其抗氧化活性。结果表明,干巴菌多糖的最佳提取工艺为:提取温度70℃、提取时间2.5 h、料液比1∶15(g∶mL),在此条件下,多糖提取率达到10.08%;当干巴菌多糖浓度为5 mg·mL~(-1)时,其对DPPH自由基的清除率为86.99%,对羟基自由基的清除率为87.46%,有较好的抗氧化作用。     

喷油方式对斜齿轮齿面温度的影响

为探讨喷油方式对齿面温度的影响，以斜齿轮为研究对象，通过CFD仿真和试验研究不同喷油方式对斜齿轮齿面温度的影响。针对斜齿轮喷油润滑过程的特点，分析其齿面摩擦生热量，简化轮齿喷油润滑计算模型，并基于CFX进行齿面对流换热仿真研究，得到了不同喷油方式下的齿面温度；基于功率开放式斜齿轮试验平台，对不同喷油方式下的齿面温度进行了试验测量，与仿真计算结果进行对比分析。结果表明：在高速重载斜齿轮传动系统中，啮出侧喷油润滑的方式比啮入侧喷油润滑方式的冷却降温效果要好。     

应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

基于密钥共享的分层混合认证模型

随着信息时代的迅速发展,云计算数据访问安全已经成为了用户最关心的问题。身份认证技术是确保参与者在开放的网络环境中实现安全通信的一种重要手段,如何利用身份认证技术为云环境安全保驾护航,成为学者研究的热点。文中通过公钥基础设施(Public Key Infrastructure,PKI)颁发CA证书以在不同云服务间建立信任,将多个采用身份密码体制(Identity-Based Encryption,IBE)的云联合起来；采用分层身份加密体系,引入共享密钥技术,通过选取成环结构,提出一种PKI-IBE混合认证模型方案,并对方案的安全性进行分析,从理论上证明了云环境下PKI-IBE(Public Key Infrastructure-Identity-Based Encryption)同层成环模型提供服务的可行性。同时文中设计了一种基于该模型的签密技术,通过公私密钥对实现云内认证以及跨云认证。安全性理论证明与性能分析表明,该方案在计算量稍增加的前提下,保证了足够的安全性,更加满足云环境下的用户分属不同云域的认证以及用户安全访问的需求,有效解决了云环境中数据访问的安全问题。     

三唑并嘧啶磺酰胺类除草剂——五氟磺草胺

综述了新型三唑并嘧啶磺酰胺类除草剂五氟磺草胺的理化性质、毒性、分析方法、加工及应用,详细介绍了其合成工艺路线、相关专利与开发进展。     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.     

一种基于FPGA的可变速率帧结构设计与实现

在简述V.35接口的基础上针对V.35接口速率可变的应用需求提出了一种速率可变的帧结构,该帧结构可支持N×64kb/s(3≤N≤32)速率,从而在V.35接口上实现了多种速率的低速业务传输.