High concentration erbium doping of silicon-rich SiO2 thin films on silicon

In this work, high concentration erbium doping in silicon-rich SiO₂ thin films is demonstrated. Si plus Er dual-implanted thermal SiO₂ thin films on Si substrates have been fabricated by using a new method, the metal vapor vacuum arc ion source implantation with relatively low ion energy, strong flux and very high dose. X-Ray photoelectron spectroscopy measurement shows that very high Er concentrations on the surfaces of the samples, corresponding to 10 at.% or the doping level of 10²¹ atoms cm⁻³, are achieved. This value is much higher than that obtained by using other fabrication methods such as the high-energy ion implantation and molecular beam epitaxy. Reflective high-energy electron diffraction, atomic force microscopy and cross-section high-resolution transmission electron microscopy observations show that the excess Si atoms in SiO₂ matrix accumulate to form Si clusters and then crystallize gradually into Si nanoparticles embedded in SiO₂ films during dual-ion implantation followed by rapid thermal annealing. Er segregation and precipitates are not formed. Photoluminescence at the wavelength of 1.54 μm exhibits very weak temperature dependence due to the introduction of Si nanocrystals into the SiO₂ matrix. The 1.54-μm light emission signals from annealed samples decrease by less than a factor of 2 when the measuring temperature increases from 77 K to room temperature.     

The effect of the EAAEAE insert on the property of human metallothionein-3

MT3 shows apparently different properties and function fromMT1 even though they have 70% sequence homology. Possibly thetwo inserts, Thr5 and a negatively charged hexapeptide at position-55in MT3, play important roles. A series of MT3 variants aroundthe EAAEAE hexapeptide have been prepared by site-directed mutagenesisand their properties and reactivity towards pH, EDTA and DTNBhave been studied. Our detailed studies revealed that the EAAEAEinsert is essential to the property of MT3. It is the hexapeptideinsert, to some extent, making the MT3     

酞菁光敏剂对S180移植瘤的疗效

研究了GaS_4PC,ZnS_2PC两种酞菁在激光照射下对S180肉瘤的疗效,并讨论了其他酞菁光敏剂对癌细胞的杀伤效果。     

曲线的保面积细分算法

针对文献(Gordon D.Corner cutting and augmentation:An area-preserving method for smoothing polygonsand polylines.Computer Aided Geometric Design,2010,27(7):551-562)中给出的CCA1算法做了改进,提出了曲线保面积细分算法——CCA(k)细分算法.该算法将CCA1中的割角由等腰三角形推广至割角两边与特征多边形的相邻两边成比例,从而使极限曲线能更好地契合初始的特征多边形.文中还推导了CCA(k)算法的递推关系式和割比的适定取法,并证明了极限曲线的收敛性和连续性.数值实例表明,对于大多数的封闭多边形,CCA(k)算法都能得到理想的细分结果.     

基于模型修正技术的模拟集成电路几何规划优化方法

为了兼顾模拟集成电路设计优化的求解精度和计算效率,提出一种基于正项式模型修正技术的几何规划优化方法.首先将模拟集成电路的设计目标与约束简化为正项式模型,然后在采用几何规划方法迭代优化的过程中利用晶体管级SPICE仿真不断修正这一正项式模型.实例表明,与传统基于公式的优化方法和基于仿真的优化方法相比,该方法能够在尽量保证计算效率和全局最优解的前提下使优化精度满足晶体管级SPICE仿真的要求.     

网页兴趣度度量方法及其在兴趣模型中的应用研究

根据用户以往网页浏览的隐式反馈信息来推断用户兴趣,给用户推荐感兴趣的网页内容,提出了网页兴趣度度量方法及其在兴趣模型中的应用。根据用户浏览网页时的停留时间和浏览行为,通过量化的兴趣度度量算法评估出用户对网页内容的感兴趣程度,从而建立起用户兴趣模型;在用户浏览网页的过程中,动态地更新用户兴趣;最终根据归纳出的用户兴趣向用户推荐文章。实验证明提出的网页兴趣度度量方法和对应的兴趣模型是可行的。     

采用工作量证明共识机制的区块链中挖矿攻击者间的“鲶鱼效应”

近年来,采用工作量证明共识机制(Proof of Work,PoW)的区块链被广泛地应用于以比特币为代表的数字加密货币中.自私挖矿攻击(Selfish mining)等挖矿攻击(Mining attack)策略威胁了采用工作量证明共识机制的区块链的安全性.在自私挖矿攻击策略被提出之后,研究者们进一步优化了单个攻击者的挖矿攻击策略.在前人工作的基础上,本文提出了新颖的两阶段挖矿攻击模型,该模型包含拥有单攻击者的传统自私挖矿系统与拥有两个攻击者的多攻击者系统.本文的模型同时提供了理论分析与仿真量化分析,并将两个攻击者区分为内部攻击者与外部攻击者.通过引入内部攻击者与外部攻击者的概念,本文指出传统自私挖矿系统转化为多攻击者系统的条件.本文进一步揭示了在多攻击者系统中两个攻击者将产生竞争并面临着“矿工困境”问题.攻击者间的竞争可被总结为“鲶鱼效应”:外部攻击者的出现导致内部攻击者的相对收益下降至多67.4%,因此内部攻击者需要优化攻击策略.本文提出了名为部分主动发布策略的全新挖矿攻击策略,相较于自私挖矿策略,该策略是半诚实的攻击策略.在特定场景下,部分主动发布策略可以提高攻击者的相对收益并破解攻击者面临的“矿工困境”问题.     

Influence of base resistance on extracting thermal resistance for SiGe HBTs

In this article, the influence of base resistance on extracting thermal resistance for SiGe heterojunction bipolar transistors is studied and an improved approach for determining the junction temperature and thermal resistance is presented. The proposed method for extracting thermal resistance is based on the temperature sensitivity of the base–emitter (B–E) voltage when the device is biased with a fixed emitter current density. This approach not only takes into account the self‐heating during the different ambient temperature measurement but also revises the empirical equation of B–E voltage due to the influence of base resistance during the power dissipation increment measurement. Results are obtained for devices with different emitter lengths and fingers. Compared with the conventional method, the thermal resistance is about up to 15% improvement for the device with 0.3 × 1.9 μm² emitter area and 13.8% for the device with 0.3 × 13.9 μm² emitter area. The accurate thermal resistance implemented in HICUM model has resulted in better fit for transistor output characteristics. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2012.