新形势下普通高校大学生行为管理模式研究

高校是培养人才的摇篮,肩负着科教兴国、人才强国两大历史性战略任务。由于社会环境的复杂化,人际关系的交错性,新时代的大学生行为状况给高校学生管理工作带来了新的挑战。针对新时期大学生行为特点,我们通过加强党建工作、强化学风建设、做好班级自主管理和深化社会服务四个方面工作进行分析,提出了全面引导、约束、规范和优化大学生的行为的建议和对策,从而有效解决新形势下普通高校学生管理工作的实际困难。     

冷轧平整机机前甩尾轧制工艺的开发与应用

本文介绍了柳钢冷轧板带厂1550 mm单机架平整机机前甩尾轧制的工艺。改进前轧制每卷钢卷生产效率低,钢卷成材率低,改进后生产效率、成材率明显提高,部分规格的钢卷能实现带尾剪切长度为零。     

巨型水电站孤岛试验期间AVC电压波动的解决

本文首先分析国内典型的AVC的一般配置、控制策略和控制原理,针对巨型水电站孤岛试验期间的AVC控制的复杂工况进行阐述,对出现的AVC电压波动的情况进行分析,并对采用的解决方案进行介绍,为今后类似电站的孤岛运行期间的AVC电压控制提供一些参考建议。     

基于滑模的运载器主动段俯仰通道姿控系统设计

与传统比例-积分-微分（PID）控制方法相比，滑模控制（SMC）方法可以比较容易地将不确定性纳入控制器设计中，从而增强系统的鲁棒性。探索了SMC技术在运载器主动段姿态控制中的工程应用，首先通过分析基于趋近律的SMC系统，提出了降低不连续切换项系数的需求，然后研究了基于干扰上界的SMC方法。三通道小偏差仿真结果验证了两种方法的控制效果，表明第2种控制器的鲁棒性更好，稳态误差小，同时发动机喷管摆角需求较小。     

川西彭州地区雷口坡组潮坪相薄储层辨识机理研究

川西彭州地区三叠系雷口坡组雷四上亚段潮坪相薄储层识别难度极大。围绕如何从复合地震强反射中区分并识别上、下两套储层面临的地球物理难题,采用先“分”后“合”的研究思路,基于实际地层结构及不同储层叠加样式建立正演模型,利用全波场波动方程正演模拟技术,剖析了不同主频条件下薄储层的地震响应特征,通过波形差异化分析,从复合地震响应中“剥离”出了两套储层所引起的地震响应特征及变化规律,明确了两套储层在不同频带下的地震识别标志和识别方法,为该区强反射界面干扰下两套薄互层储层辨识机理分析及精准预测奠定了基础。基于不同频带下薄储层辨识机理的分析结果,定性预测了薄储层平面展布,提出了深层潮坪相薄储层识别和预测难题的解决方案,为该区地震资料品质评价、面向薄储层的地震采集技术设计、地震资料处理及薄储层预测提供了依据和指导。     

Anti‐Sway Crane Control Considering Wind Disturbance and Container Mass

A method for estimating the sway angle using an observer has already been proposed. The state observer estimates the sway angle accurately and must use the detected sway angle value. However, the estimated sway angle has an error owing to rope length error, friction force, and wind. Moreover, the container mass cannot be determined, and therefore the observer parameter is not suitable. We already proposed robust antisway control for overcoming rope length error without adding a new sensor. Further, we designed a friction disturbance observer to cancel out the influence of the friction force. In this paper, we first propose a container mass estimation method when a crane system performs rolling up control. The observer parameter can be selected using the estimated mass value. Second, in crane parallel shift control, we propose a robust antisway control even when there is a wind disturbance. We design a wind disturbance observer and propose a wind disturbance estimator to separate the friction observer output from the wind disturbance observer output. We confirm through experiments that the proposed method can reduce vibration.     

仪器仪表产品脉冲耐压试验要求和保护器件的选择

仪器仪表产品的脉冲耐压试验是产品型式试验、例行试验中的基本内容。通过对GB4793.1标准的整理,归纳了仪器仪表产品的脉冲耐压试验要求。通过对试验方法和设备特性的梳理,总结了特性参数,并介绍了应对脉冲耐压试验可采取的保护器件的类别及选用方法。     

基于关键路径延时检测的自适应电压缩减技术

为了减小传统的最差情况设计方法引入的电压裕量,提出了一种变化可知的自适应电压缩减(AVS)技术,通过调整电源电压来降低电路功耗.自适应电压缩减技术基于检测关键路径的延时变化,基于此设计了一款预错误原位延时检测电路,可以检测关键路径延时并输出预错误信号,进而控制单元可根据反馈回的预错误信号的个数调整系统电压.本芯片采用SMIC180 nm工艺设计验证,仿真分析表明,采用自适应电压缩减技术后,4个目标验证电路分别节省功耗12.4％,11.3％,10.4％和11.6％.     

Design and performance study of phase‐locked loop using fractional‐order loop filter

The present work reports the realization of an analog fractional‐order phase‐locked loop (FPLL) using a fractional capacitor. The expressions for bandwidth, capture range, and lock range of the FPLL have been derived analytically and then compared with the experimental observations using LM565 IC. It has been observed that bandwidth and capture range can be extended by using FPLL. It has also been found that FPLL can provide faster response and lower phase error at the time of switching compared to its integer‐order counterpart. Copyright © 2014 John Wiley & Sons, Ltd.     

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.