Polystyrene‐supported polyoxyethylene bound potassium permanganate as a heterogeneous oxidizing agent

Oxidation behavior of a 2 mol % divinylbenzene (DVB)‐crosslinked polystyrene‐supported permanganate function was investigated toward low molecular weight primary and secondary alcohols and aldehydes. The permanganate function was attached to a polystyrene support through cyclic polyoxyethylene (POE) units immobilized on the support. Contrary to the oxidations catalyzed by low molecular weight permanganate reagents, the oxidation of primary alcohol terminated in the aldehyde stage. The secondary alcohols were converted to the respective ketone and aldehyde to acid. The effect of the variable parameters similar to solvent, temperature, and reagent to substrate ratio was followed. Nonpolar cyclohexane was found to be the best solvent for the present study. Also the reactivity increased with increasing temperature. The oxidizing reagent possesses a long shelf life and could be recycled several times without reduction of capacity and mechanical stability. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 90: 3708–3717, 2003     

大型往复式压缩机的配管设计

大型往复式压缩机功率大、占地面积大,管道振动问题也更为突出。笔者结合实践经验,对大型往复式压缩机的配管设计进行探讨,说明了平面布置与管道防振设计的密切关系,并介绍了管道防振设计的方法和步骤,以及相对简单的复杂管系气柱固有频率的转移矩阵计算方法。     

动态矩阵控制在浆料浓度控制系统中的应用

针对PTA生产中浆料配制过程这一有纯滞后、大时间常数的非线性系统，进行系统的动态机理分析，与工作点附近的线性化，在此基础上设计DMC-PID串级加前馈控制方案。目前该系统在扬子石化化工厂PTA装置上已成功投运。     

基于系统矩阵有序实Schur分解的模型降阶

对复杂高阶系统进行模型简化，为研究与设计系统提供了方便的条件。对系统模型的降阶是控制系统设计与仿真工作者的一个重要研究课题，对高阶复杂系统的分析、设计、仿真等具有重要的理论意义和工程实用价值。针对目前比较成熟的基于系统矩阵的有序实Schur分解方法，提出了采用时矩输出拟合来改善降阶系统输出响应逼近程度的改进方法，从而使简化模型具有输出误差更小、计算简便等优点，通过给出的实例仿真证实了这一点。     

基于高频高压交流母线多组输出直流电源的研制

本电源是基于高频高压交流母线具有多组输出的直流电源，它具有高达200kHz的开关频率，后级的整流电路由于高频交流母线的存在，使得变压器和电感的设计变得简单，滤波电容的选择也更容易。本电源由PFC电路提供400V的高压直流输入，再由MOSFET组成全桥逆变电路，在固定额率的PWM发生电路和IR2110 MOSFET驱动电路作用下，只加—个谐振电感就可实现开关管的零电压开通，可在大大降低开关损耗和噪声的同时实现直流交流的变换。整流部分采用倍流整流电路以提高原边电压的利用率，可输出低压大电流。由于采用肖特基管，—方面可使得二板管的损耗可以接受，另外—方面还避免了采用同步整流电路所面临的电路结构复杂和驱动困难。     

微杯电子纸及其后加工制程

SiPix利用独特的微杯(Microcup)结构和顶部灌注封装技术，通过连续整卷高速涂布的制程成功地制造出高性能的双稳性、装填电泳微粒的电子纸。SiPix可提供下列两种规格形式任意的EPD卷式成品：(A)用于有源矩阵EPD和直接驱动产品的可剥离保护膜／已灌装及密封的Microcup／无图案导体膜夹层卷；及（P）用于无源矩阵的行导体膜／已灌装及密封的Microcup／列导体膜夹层卷。已经开发出将EPD卷制成不同的显示模块或产品的简单的后续加工制程。     

任意取向多个介质旋转椭球的散射场

本文提出了一种用于计算任意取向多个介质椭球电磁散射的混合方法.利用扩展边界条件(EBC)导出具有旋转轴对称单个椭球以球面波矢量函数为基底的T矩阵,结合球矢量波函数旋转定理和递推T矩阵方法,给出多个任意取向介质椭球的散射场.数值例子验证了该混合方法的计算精度和有效性.     

Signal Integrity: Fault Modeling and Testing in High-Speed SoCs

As we approach 100 nm technology the interconnect issues are becoming one of the main concerns in the testing of gigahertz system-on-chips. Voltage distortion (noise) and delay violations (skew) contribute to the signal integrity loss and ultimately functional error, performance degradation and reliability problems. In this paper, we first define a model for integrity faults on the high-speed interconnects. Then, we present a BIST-based test methodology that includes two special cells to detect and measure noise and skew occurring on the interconnects of the gigahertz system-on-chips. Using an inexpensive test architecture the integrity information accumulated by these special cells can be scanned out for final test and reliability analysis.     

声光效应拉曼-内斯方程矩阵级数解法及声光调制器优化设计

提出一种求解正常声光相互作用拉曼 内斯 (Raman Nath)方程的矩阵级数解法 ,该解法直观方便且具有普遍性。计算结果表明 ,对Q =4 1π ,Bragg衍射的效率只有 97 5 % ;对非对称入射 ,以往的Raman Nath近似解误差较大 ;指出提高Bragg衍射效率的有效途径在于提高声光频率比并给出计算声光器件最优长度的计算公式。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.