Commercially available carbon-based thin films consisting of single layers of amorphous diamond-like carbon or multilayers of crystalline TiAlN or CrN with diamond-like carbon top coatings were evaluated in relation to their electrochemical corrosion behavior in chloride ions containing electrolytes. The hardened working steel (an alloy of 0.9% C, 4.1% Cr, 4.9% Mo, 1.8% V, 6.4% W) was used as a substrate material.The potentiodynamic corrosion behavior of coated samples was tested in 3.5 wt.% NaCl solution and Hank's balanced body solution, HBBS (0.89 wt.% NaCl, further chlorides, sulfates, carbonates and phosphates). The multi-layers TiAlN + a-C:H:W and CrN + a-C:H:W exhibited only a minor improvement in corrosion resistance. Single layers of amorphous diamond-like carbon coating without hydrogen (a-C) spall off during the corrosion tests in chloride containing media. A minor improvement of the corrosion resistance is possible. The a-C:H and the a-C:H:Si, which contain hydrogen, showed the best corrosion resistance with a 100 times lower corrosion current density. 相似文献
In atomic collisions in solids by the ions with very strong electronic interaction, it is confirmed that the atomic displacement process is enhanced by electronic excitation. Two experimental results are introduced as examples. The first is the columnar defect formation in a cuprate superconductor Bi2Sr2CaCu2Ox which is irradiated with 3.5 GeV Xe ions, the second is sputtering induced by highly charged ion (HCI) bombardment (Xeq+; q=15-44). Since there are some indications to show that these phenomena might be the outcome of the Coulomb explosion process, we tried to make a molecular dynamics simulation of the sputtering process based on this Coulomb explosion mechanism. Good agreement between the simulation and experiment was found. For sputtering of electrically conductive materials, the importance of neutralization dynamics of the HCI and the highly charged region in the solid materials was indicated. 相似文献
It was observed previously that ceramic/ceramic bilayers were very sensitive with respect to the electronic stopping power Se, i.e. strong interface mixing, scaling with , occurred if a threshold Sec was exceeded. The threshold seemed to be determined by the higher track formation threshold of two constituents forming the bilayer. Although no track formation has been observed in crystalline Si even for Uranium projectiles, interface mixing was observed previously for some Si-multilayers.
In this paper we report on the interface mixing of NiO, Fe2O3, TiO2 on Si due to irradiation with 90–350 MeV Ar-, Kr-, Xe- and Au-ions at 80 K at fluences up to 9E15 ions/cm2. Interface mixing, analyzed by means of Rutherford Backscattering Spectrometry (RBS), is found for these bilayers, too. But the threshold for intermixing is significantly higher compared to the ceramic/ceramic bilayers. This observation could be an evidence for the threshold being determined by the Si-layer. In contrast to NiO/Si and Fe2O3/Si, where an usual random walk mixing Δσ2 = kΦ was observed, the interface broadening Δσ2 for TiO2/Si is found to scale nonlinearly with the ion fluence, which indicates that mixing is driven by a chemical solid-state reaction. At higher fluences plateaus form at the low energy Ni-edge of the RBS spectra. The plateaus indicate phase formation. X-Ray diffraction spectra does not show any evidence for new crystalline phases. 相似文献