Evaluation of Slow Crack Growth Resistance in Ceramics for High-Temperature Applications

The slow (subcritical) crack growth (SCG) resistance of Si₃N₄ and SiC ceramics has been evaluated by a stepwise loading test on bending bars precracked by Vickers indentation. Three highly refractory materials were selected for the evaluation: i.e., (1) high-purity Si₃N₄ sintered by hot isostatic pressing (HIP) without additives and (2,3) α - and β - SiC pressureless sintered with B and C addition. Under the hypothesis of linear elastic behavior at high temperature, which was found satisfied in the present materials, the SCG resistance was expressed in terms of initial stress intensity factor critical for SCG failure within a predetermined lifetime. The present method was found useful in shortening the testing time and consistent with other traditional fatigue tests (e.g., static-fatigue test): It is recommended as a screening test for materials under research and development. Among the materials tested in the present study, the highest SCG resistance up to 1440°C was found in the high-purity Si₃N₄ without additives.     

Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs

The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also described. The optimization includes correction for the dark current under reverse- and forward-bias conditions before calculating the quantum efficiency, and easy access to the highest numerical accuracy available from PC-1D, neither of which is conveniently available with PC-1D’s standard user interface.     

Crystallization of Polymer-Derived Silicon Carbonitride at 1873 K under Nitrogen Overpressure

The chemical stability of an amorphous silicon carbonitride ceramic, having the composition 0.57SiC·0.43Si₃N₄·0.49C is studied as a function of nitrogen overpressure at 1873 K. The ceramic suffers a weight loss at p _N2 < 3.5 bar (1 bar = 100 kPa), does not show a weight change from 3.5 to 11 bar, and gains weight above 11 bar. The structure of the ceramic changes with pressure: it is crystalline from 1 to 6 bar, amorphous at ∼10 bar, and is crystalline above ∼10 bar. The weight-loss transition, at 3.5 bar, is in excellent agreement with the prediction from thermodynamic analysis when the activities of carbon, SiC, and Si₃N₄ are set equal to those of the crystalline forms; this implies that the material crystallizes before decomposition. The amorphous to crystalline transition that occurs at ∼10 bar, and which is accompanied by weight gain, is likely to have taken place by a different mechanism. A nucleation and growth reaction with the atmospheric nitrogen is proposed as the likely mechanism. The supersaturation required to nucleate α-Si₃N₄ crystals is calculated to be 30 kJ/mol.     

Amorphous chromium silicide formation in hydrogenated amorphous silicon

The interaction between thin films of hydrogenated amorphous silicon and sputter-deposited chromium has been studied. Following deposition of the chromium films at room temperature, the films were annealed over a range of times and temperatures below 350°C. It was found that an amorphous silicide was formed only a few nanometers thick with the square of thickness proportional to the annealing time. The activation energy for the process was 0.55±0.05 eV. The formation process of the silicide was very reproducible with the value of density derived from the thickness and Cr surface density being close to the value for crystalline CrSi₂ for all films formed at temperatures ≤300°C. The specific resistivity of the amorphous CrSi₂ was ≈600 μΩ·cm and independent of annealing temperature.     

流延法制作AlN陶瓷基片工艺

研究出一种用流延法制作ＡＩＮ陶瓷基片的工艺。制备出性能优良的ＡＩＮ基片。经１６５０℃，保温２ｈ无压烧结制得的基片，其热导率达１３０Ｗ／（ｍ·Ｋ）、密度为３．３４ｇ／ｃｍ￣３，表面光滑平整，瓷体结构均匀，性能达到用干压法制备的同类基片的性能。     

激光法合成SiC超细粉末物理化学过程的研究——Ⅰ.实验规律及粉末特性

用50W连续波CO_2激光器为热源,诱发SiH_4和C_2H_4反应,合成SiC超细粉末。实验确定了反应腔体内压力p、气源中的C/Si原子比、喷嘴内径2r以及激光功率密度与粉末特性之间的关系,并对合成的产物进行物理、化学表征。     

氮对纳米硅氮薄膜品化的影响

在电容式耦合等离子体化学气相沉积系统中，用高氢稀释硅烷和氮气为反应气氛制备纳米硅氮（ｎｃ－ＳｉＮｘ：Ｈ）薄膜结果表明：当Ｎ＿２／ＳｉＨ＿４气体流量比（Ｘｎ）从１增加为４时，薄膜的晶态年从５８％降至１４％，晶粒尺寸从１０ｎｍ降至５ｕｍ，Ｎ／Ｓｉ含量比从０．０３增至０．１２．当Ｘｎ≥５，则生成非晶硅氮（ａ－ＳｉＮｘ：Ｈ）薄膜．当Ｘｎ从１增加为１０时，薄膜暗电导率从１０￣（－５）（Ωｃｍ）￣（－１）降至１０￣（－１１）（Ωｃｍ）￣（－１），具有逾渗行为，这与薄膜的晶态率紧密相关．     

Kinetic analysis for effect of initial substrate concentration on growth and secondary metabolite production in cultures of Nicotiana tabacum

Suspension cultures of tobacco cells were studied using airlift and rotary-drum bioreactors. The effect of initial concentrations of a major substrate, sucrose, on the growth and production of a secondary metabolite, phenolic compounds, was investigated. The dry weights and total concentrations of the phenolic compounds increased with the initial sucrose concentration in both bioreactors. Both bioreactors were found to have the same tendency for the effect of initial sucrose concentration. The structured model, presented previously was modified by considering that sucrose was hydrolyzed to glucose and fructose by an enzymatic reaction. The previous and the new models were applied to the above two sets of experimental data obtained with two bioreactors, independently. The hydrolysis of sucrose was elucidated to contribute slightly to the overall kinetics of growth and secondary metabolite production in these cultures. Furthermore, the levels of shear damage in each bioreactor were quantitatively compared based on the death rate constant, k_i, which is one of the model constants.     

涂层材料的断裂分析(英文)

和基体厚度相比,涂层很薄,因此细观力学模型可把基体作为半无限弹性体。由于涂层和基体材料的膨胀系数及弹性系数不匹配,涂层材料中残余热应力的解析解为 E_c/(1-γ_c)·(α_s-α_c)△T。用有限元法校核,该应力和解析解吻合得好。通过对涂层产生裂纹驱动力和断裂韧性的讨论,提出了抗裂涂层厚度公式。     

Effect of epitaxial realignment on the leakage behavior of arsenic-implanted,as-deposited polycrystalline Si-on-single crystal Si diodes

When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal budget annealing can cause the interfacial “native” oxide at the polycrystalline silicon-single crystal silicon interface to break up into oxide clusters, causing epitaxial realignment of the polycrystalline silicon layer with respect to the silicon substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse effects on the leakage characteristics of the shallow junctions formed in the silicon substrate using this technique. The degradation in the leakage current is mainly due to increased generation-recombination in the depletion region because of defect injection from the interface.