Nondestructive Electrical Resistivity Method to Map the Drainage System of Football Playgrounds

Geophysical surveys could contribute significantly to remediation programs for damaged buried engineering structures. Resistivity profiling and mapping techniques used in this work allow rapid and one of the most cost-effective ways of characterization and visualization of internal defects of drainage and watering systems of football playgrounds in a nondestructive way. Cost-effective and nondestructive testing can be valuable assets for diagnosis, realization, and restoration of football playgrounds.     

Achieving remarkable piezoelectric activity in Sb–Mn co-modified CaBi4Ti4O15 piezoelectric ceramics

CaBi₄Ti₄O₁₅ (CBT)-based Aurivillius high-temperature piezoceramics with different Sb–Mn co-doping amounts were synthesized via the conventional sintering technique. The influences of doping amount on the product were studied via their crystal structure, microstructure, and piezoelectric performance. It is found that an appropriate Sb–Mn co-doping amount can effectively optimize the crystal structure and decrease the oxygen vacancy concentration in CBT ceramics, leading to enhanced electrical properties. Optimized electrical performance with a high Curie temperature (T_C) of 792 °C and a remarkable piezoelectric coefficient (d₃₃) of 25 pC/N were achieved at a doping amount (x) of 0.05. Furthermore, this ceramic is found to exhibit an excellent thermal stability, with d₃₃ retaining 88% of its original value after annealing at 600 °C for 2 h. Moreover, this ceramic shows a high electrical resistivity (ρ) of 1.35×10⁸ Ω·cm with a small dielectric loss (tan δ) of 1.7% at 400 °C. Because of such outstanding piezoelectric performance, it is believed that these Sb–Mn co-doped CBT ceramics could be potential candidates for high-temperature piezoelectric applications.     

The sprayed ZnO films: nanostructures and physical parameters

We synthesized the pure and indium-doped (IZO) ZnO films with a facile composition control spray pyrolysis route. The substrate temperature (T_s) and In-doping effects on the properties of as-grown films are investigated. The X-ray pattern confirms that the as-synthesized ZnO phase is grown along a (002) preferential plane. It is revealed that the crystalline structure is improved with a substrate temperature of 350 ℃. Moreover, the morphology of as-grown films, analyzed by AFM, shows nanostructures that have grown along the c-axis. The (3 × 3μm²) area scanned AFM surface studies give the smooth film surface RMS < 40 nm. The UV-VIS-IR measurements reveal that the sprayed films are highly transparent in the visible and IR bands. The photoluminescence analysis shows that the strong blue and yellow luminescences of 2.11 and 2.81 eV are emitted from ZnO and IZO films with a slight shift in photon energy caused by In-doping. The band gap is a bit widened by In-doping, 3.21 eV (ZnO) and 3.31 eV (IZO) and the resistivity is reduced from 385 to 8 Ω ·m. An interesting result is the resistivity linear dependence on the substrate temperature of pure ZnO films.     

接触面陷阱密度对a-InSnZnO薄膜晶体管器件电气性能的影响研究

We reported the influence of interface trap density（Nt） on the electrical properties of amorphous InSnZnO based thin-film transistors,which were fabricated at different direct-current（DC） magnetron sputtering powers.The device with the smallest N_t of 5.68×10¹¹ cm^-2 and low resistivity of 1.21×10^-3Ω·cm exhibited a turn-on voltage(V_ON) of-3.60 V,a sub-threshold swing（S.S） of 0.16 V/dec and an on-off ratio(I_ON/I_OFF) of⁸ x 108.With increasing N_t,the V_ON,S.S and I_ON/I_OFF were suppressed to-9.40 V,0.24 V/dec and 2.59×10⁸,respectively.The V_TH shift under negative gate bias stress has also been estimated to investigate the electrical stability of the devices.The result showed that the reduction in N_t contributes to an improvement in the electrical properties and stability.     

干燥砂卵石土壤电阻率测量接触电阻问题研究

本文以河西走廊地区某高铁牵引变送电线路为例,重点介绍了采用四极对称法在干燥地区的干燥砂、卵碎石地层土壤电阻率测量遇到测量不出的问题,分析产生该问题的原因是电极与土壤间的接触电阻过大,提出解决该接触电阻过大的方法是增大电极接触面,增加电极深度,具体方法是往电极处浇灌足够的水,且让水具有足够的渗入时间,以达到降低接触电阻的目的。     

岩溶地基施工勘察方法探讨

近年来在我院设计的火力发电厂工程中已遇到过各种复杂的岩溶地基,从地基处理方案的角度,可将他们分为浅基础地基、深基础地基。本文通过对浅基础地基及深基础地基的地基处理设计及施工经验的总结,归纳出岩溶发育强烈地区针对溶洞、溶槽、溶沟等问题的浅基础地基、深基础地基的施工勘察方法,对后续类似工程提供参考。     

Bi_2O_3掺杂对Mn-Cu-Ca系负温度系数热敏电阻性能的影响

通过在Mn-Cu-Ca系负温度系数热敏电阻器(NTCR)配方中掺杂质量分数x%的Bi2O3(x=0,0.5,1,2.4,4.8,7),采用传统固相反应法制备了单层圆片式热敏电阻元件,研究了该元件的微观结构和电性能。实验结果表明:Bi2O3存在于晶界处,Bi2O3的存在增大了元件的晶粒尺寸,同时影响元件的气孔率。Bi2O3的引入降低了元件的室温电阻率,拓宽了元件的使用温区。当Bi2O3的添加量为质量分数4.8%时,元件具有较低的室温电阻率(6?·cm)及较宽的使用温区(室温~240℃)。     

铜粉添加量对铜酚醛树脂导电油墨性能的影响

以微米级铜粉为导电填料、酚醛树脂为粘接剂制备了导电油墨,并将该油墨以聚酰亚胺薄膜为基底,采用丝网印刷技术制备导电涂层。研究了铜粉添加量对铜酚醛树脂导电油墨的黏度、固含量以及导电涂层的微观形貌、电阻率和附着力的影响。研究表明,当铜粉添加量质量分数为70%时,制备的铜酚醛树脂导电油墨具有良好的性能,该导电油墨经丝网印刷得到的导电铜膜经低温固化后具有良好的电性能,其电阻率最低可以达到53.865×10–3Ω·cm。     

微型薄膜电阻的制备及研究

将具有优异特性的碳纳米管（CNTS）与负性感光胶（SU-8 2002）混合得到复合材料,将不同比例的碳纳米管通过超声工艺分散到SU-8 2002感光胶中,通过UV-LIGA加工工艺,热压处理后实现了微型电阻的快速制备。对复合薄膜电阻的性能进行测试,测试结果表明复合薄膜电阻率随着碳纳米管比例的增加而减小,当碳纳米管的比例为12%时,电阻率减小到0.06 ,复合材料达到逾渗阈值,频率小于1.2GHz时,电阻值的变化范围小于5%,为快速制备微型电阻提供了新的方法。     

川东北YB气田灰岩储层裂缝识别与有效性评价

利用岩心、常规测井、电阻率成像测井等资料开展裂缝识别与有效性评价研究。YB气田大安寨段裂缝以低角度的微裂缝、小裂缝为主;常规三孔隙度测井、双侧向测井结合电阻率成像测井能有效识别裂缝;阵列声波测井可有效评价裂缝的有效性。针对电阻率成像测井与阵列声波测井资料较少,提出利用电成像测井标定常规测井建立裂缝发育指标分类(Ⅰ类、Ⅱ类、Ⅲ类)标准与定量评价方法。该方法在现场储层评价中取得了良好效果。