Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

Synthesis and characterization of novel copolymers with the trimethylsilyl group for deep‐UV photoresists

N‐(4‐Acetoxyphenyl) maleimide (APMI) and three kinds of comonomers bearing a trimethylsilyl group were copolymerized at 60°C in the presence of azobisisobutyronitrile (AIBN) as an initiator in 1,4‐dioxane to obtain the three IP, IIP, and IIIP copolymers. These copolymers were removed from the acetoxy group in a transesterification process into new IVP, VP, and VIP copolymers with a pendant hydroxyl group. Two modified processes were adopted to prepare photoresists using these copolymers. The first process involved mixing the dissolution inhibitor, o‐nitrobenzyl cholate, with the new copolymers. Second, o‐nitrobenzyl cholate was introduced into the copolymers using 1,8‐diazabicyclo[5.4.0]undec‐7‐ene (DBU) in dimethylformamide (DMF). The cyclic maleimide structure is responsible for the high thermal stability of these copolymers. After irradiation using deep–UV light and development with aqueous Na₂CO₃ (0.01 wt %), the developed patterns showed positive images and exhibited good adhesion to the silicon wafer without using any adhesion promoter. The resolution of these resists was at least 0.8 μm and an oxygen‐plasma etching rate was 1/5.3 to that of hard‐baked HPR‐204. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 83: 2791–2798, 2002; DOI 10.1002/app.10255     

非平衡等离子体协同作用光催化剂催化降解苯

采用非平衡等离子体与光催化剂相结合,对苯的降解进行了实验研究。考察了以不同吸附能力的玻璃球和γ-Al2O3为载体对苯降解率、碳平衡、CO2选择性、NOx及O3生成量的影响;研究了以γ-Al2O3为载体时,水蒸气含量对苯的降解率、碳平衡、CO2选择性、NOx及O3生成量的影响。实验结果表明,以具有吸附性的γ-Al2O3为载体可提高苯的降解率;当能量密度为618J/L时,苯的降解率可达98%;同时可降低O3的生成量,但NOx生成量增加;以γ-Al2O3为载体时,随水蒸气含量的增加,苯的降解率降低,特别是在低能量密度时,水蒸气对苯降解率的影响更为显著,但水蒸气的加入可抑制O3的生成,同时可提高碳平衡值。     

A new type of arc plasma reactor with 12-phase alternating current discharge for synthesis of carbon nanotubes

A new type of arc plasma reactor with 12-phase alternating current (AC) discharge for synthesis of carbon nanotubes (CNTs) is proposed. A couple of six discharge electrodes by which have mutually electrical connection between them to enlarge the high-temperature regions in the reactor are arranged to three-dimensional locations. A new method of CNTs fabrication by this reactor, which accomplishes to enlarge the suitable growth region in high purity and at high yield, was developed.     

Wear resistance of plasma coatings for a constant work of friction

We analyze the wear resistance of plasma coatings for a constant work of friction. The dependences of the wear resistance of the coatings are obtained for a broad range of loading conditions. It is shown that the minimum sensitivity to loading conditions is exhibited by the molybdenum coatings. It is also established that the wear resistance of the coatings decreases as the amplitude of displacements increases and the cyclic frequency of the tests decreases due to the intensification of fatigue processes on the surfaces. The comparative characteristics of coatings are presented. __________ Translated from Problemy Prochnosti, No. 5, pp. 94–100, September–October, 2007.     

台式毛细管放电X光激光装置调试实验

对自行研制的台式毛细管放电X光激光装置进行了系统调试,在充氩气毛细管负载下,输出电流38kA,电流脉冲前沿40ns,并对有关问题进行了讨论.并在这个装置上开展充氩气毛细管放电荧光光谱实验研究.     

B4C涂层作为等离子体面对材料的一些性质

介绍了利用等离子喷涂设备,B4C/Cu梯度功能涂层及非梯度涂层的制备技术,在模拟实验装置中测量了在高能粒子(3 keV,D+)的作用下,B4C涂层的化学溅射产额、热解吸性能、热冲击性能及热导率.结果表明B4C是一种有希望为未来聚变装置中等离子体面对的材料.     

Criterion of Magnetic Saturation and Simulation of Nonlinear Magnetization for a Linear Multi-core Pulse Transformer

The linear multi-core pulse transformer is an important primary driving source used in pulsed power apparatus for the production of dense plasma owing to its compact,relatively low-cost and easy-to-handle characteristics.The evaluation of the magnetic saturation of the transformer cores is essential to the transformer design,because the energy transfer efficiency of the transformer will degrade significantly after magnetic saturation.This work propses analytical formulas of the criterion of magnetic saturation for the cores when the transformer driver practical loads.Furthermore,an electric circuit model based on a dependent source treatment for simulating the electric behavior of the cores related to their nonlinear magnetization is developed using the initial magnetization curve of the cores.The numerical simulation with the model is used to evaluate the validity of the criterion.Both the criterion and the model are found to be in agreement with the experimental data.     

等离子体氧化nc-Si/SiO_2多层膜的蓝光发射

报道了在等离子体增强化学气相沉积 (PECVD)系统中用交替淀积 a-Si对其进行原位等离子体氧化的方法制备了 a-Si∶H/ Si O2 多层膜。随着 a-Si∶H子层的厚度从 3 .8nm减小到 1 .5 nm,a-Si∶H/ Si O2 多层膜的光吸收边和光致发光 (PL )出现了蓝移。在晶化的 a-Si∶ H/ Si O2 多层膜中不仅观察到室温下的红光带 (80 0nm)的发光峰 ,而且还观察到蓝光发射 (4 2 5 nm) ,结合 Raman,TEM和 PL测试 ,对其原因作了简单的分析     

等离子体横向刻蚀硅的特性研究

研究了用SiO2 +Al作掩模 ,SF6 +O2 混合气体等离子体对Si的横向刻蚀 ,其结果表明 ,在SF6 +O2 等离子体气氛中 ,Al是很好的保护膜 ,可以在待悬浮器件下形成大的开孔。因此 ,预计用这种技术 ,可以在Si片上集成横向尺寸为数百微米 ,具有优良高频性能的MEMSRF/MW无源器件 ,如开关、传输线、电感和电容等。