LPCVD制备纳米硅镶嵌结构氮化硅膜及其内应力

报道了在采用 L PCVD法制备的富硅 Si Nx 膜中发现的部分晶化的硅镶嵌微结构 .视生长条件和工艺不同 ,该结构的尺度范围从数十到几百纳米不等 .利用不同条件下生长的 Si Nx 膜的应力测试结果和透射电镜观测结果 ,分析了富硅型 Si Nx 膜的微结构的成因及其与膜内应力之间的相互影响 ,对富硅型 Si Nx 膜的 L PCVD生长工艺进行优化 ,大大降低了膜的张应力 ,无支撑成膜面积可达 4 0 m m× 4 0 mm.通过这一研究结果 ,实现了 L PCVD可控制生长确定张应力的 Si Nx 膜     

Inductively coupled plasma — plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)

Silicon nitride thin films have been deposited on InP-based structures at both room and high temperatures in an RF-inductively coupled plasma enhanced chemical vapor deposition (ICP-PECVD) equipment. Metal insulating semiconductor (MIS) diodes have been widely investigated using either SiH₄+NH₃ or SiH₄+N₂ gas phase. I–V measurements conducted on these diodes reveal high resistivity and breakdown electric field even at low deposition temperature (50°C). Double channel (DC) High electron mobility transistors (HEMTs) have been passivated by SiN_x films deposited at room temperature using SiH₄+NH₃ precursors. Passivated devices exhibit a very low drift over a 45 h period of stress under high gate-drain electric field.     

Synthesis and characterization of self-assembled ZnO nano-dots grown on SiNx/Si(001) substrates by radio frequency magnetron sputtering

This paper reports the synthesis and characterization of self-assembled ZnO nano-dots deposited on SiN_x/Si(001) substrates by radio frequency magnetron sputtering. The effect of the working pressure on the microstructure of the as-grown ZnO thin films was examined. At a working pressure of 6 × 10⁻³ Torr, a flat layered structure was dominant with a preferred orientation of the ZnO(0002) plane, while ZnO nano-structures were observed on the samples grown at 2 × 10⁻² Torr. This was attributed to the columnar growth that facilitated the nucleation of ZnO nano-structures on the growing surfaces. Hexagonal nano-pyramids were formed, which then transformed into nano-dots as the film became thicker. The ZnO nano-dots were uniform and well dispersed, exhibiting distinct photoluminescence spectra due to the quantum confinement effect.     

Refractive index properties of SiN thin films and fabrication of SiN optical waveguide

SiN thin films having excellent surface morphology for the optical device application were synthesized using a plasma enhanced chemical vapor deposition (PECVD) method at low temperature (350^°C) using silane (SiH₄) and nitrogen (N₂). The effects of the SiH₄/N₂ flow ratio, rf power and annealing on the SiN films were investigated. The optical and structural properties of SiN films were characterized using an ellipsometry, a fourier-transform infrared spectroscopy (FT-IR), and an atomic force microscope (AFM). The refractive index increased from 1.6 to 2.3 as the SiH₄/N₂ ratio was increased from 0.17 to 1.67. The rms surface roughness decreased from 14.1 to 3.6Å after post-deposition annealing process performed at 800^°C for 1hr in an air ambient. We could fabricate straight waveguides based on a three layer structure and have no problems with step coverage.     

富硅氮化硅薄膜的制备及其发光特性

采用射频磁控反应溅射法制备了氮化硅薄膜.利用X射线衍射谱(XRD)、红外光谱(IR)、能谱(EDS)和光致发光谱(PL),通过与氮气中和空气中退火薄膜比较,对原沉积薄膜进行了成分与结构和发光特性研究.研究发现原沉积薄膜是部分晶化的富硅氮化硅薄膜,薄膜中晶态氮化硅颗粒的平均粒径为33 nm;在氮气中退火后,纳米颗粒增大;在空气中退火后,薄膜被氧化,晶态颗粒消失.在4.67 eV的光激发下,原沉积薄膜中观测到7个强的PL峰,其峰位分别为3.39,3.24,3.05,2.82,2.61,2.37和2.11 eV.在氮气和空气中退火后, PL峰位和强度有变化.对其光致发光机制进行了探讨, 认为硅悬挂键≡Si,氮悬挂键=N,硅错键≡Si-Si≡以及与氧有关的缺陷在富硅氮化硅薄膜高强度荧光发射中起主导作用.     

铜互连氮化硅薄膜沉积技术中电压衰减的研究

根据0.13 μm以下的深亚微米超大规模集成电路中先进的后道铜互连技术对于氮化硅薄膜沉积的具体要求,文章在大马士革工艺的基础上分析了可能导致铜互连失效的原因.进而在应用材料公司的PRODUCER(一种薄膜沉积设备)机台上,通过包括对氨等离子体预处理和氮化硅预沉积的这两步骤作实验研究.利用田口分析判断的实验方法,找到主要...     

TC4钛合金表面沉积CrSiN/SiN纳米多层膜在3.5%NaCl溶液中的腐蚀磨损性能

为了研究纳米多层膜的耐腐蚀性能以及腐蚀磨损机理,采用离子源辅助磁控溅射在TC4钛合金表面制备不同调制周期的CrSiN/SiN纳米多层膜。使用扫描电子显微电镜、能谱仪表征涂层的微观结构、腐蚀形貌以及元素分布;使用划痕仪、纳米压痕仪、维氏硬度计测量涂层的膜基结合力、硬度、弹性模量及断裂韧性,采用电化学工作站以及销盘磨损仪测量涂层耐腐蚀性和腐蚀磨损性。结果表明:调制周期为90 nm与360 nm时涂层耐腐蚀性能较好,腐蚀电流密度分别为1.31×10~(-8)A·cm~(-2)和1.20×10~(-8)A·cm~(-2)。此外,调制周期为45nm时,涂层硬度及弹性模量最大,分别为(22.5±0.6)GPa和(226.4±6.3)GPa,且腐蚀磨损率最低,为9.67×10~(-7)mm~3·N~(-1)·m~(-1)。多层膜结构显著改善了TC4钛合金的耐腐蚀及腐蚀磨损性能。     

On the electronic improvement of multi‐crystalline silicon via gettering and hydrogenation

The electronic properties of multi‐crystalline silicon must be improved during solar cell fabrication if highly efficient devices are to be made. This work shows how gettering and silicon nitride induced hydrogenation improve three properties: carrier lifetime, interstitial iron concentration, and trap density. Area averaged effective carrier lifetimes less than 10 µs were improved to greater than 60 µs. A tenfold reduction in trap densities was achieved. Photoluminescence images showing the influence processing techniques have on the electronic properties of the silicon are presented. Copyright © 2007 John Wiley & Sons, Ltd.