Thin‐film barriers using transparent conducting oxides for organic light‐emitting diodes

Abstract— This study covers thin‐film barriers using inorganic barriers of transparent conducting oxides (TCOs) such as zinc oxide (ZnO) and indium tin oxide (ITO). The TCOs were fabricated using a sputtering method with a process gas of pure argon at room temperature. ITO showed better properties as a barrier than the ZnO and exhibited the electronic performance necessary to perform additional functions. The ITO has superior barrier performance because it has a lower crack density due to its partial amorphous phase. For organic/inorganic multilayer barriers, the organic underlayer decreased the water‐vapor transmission rate (WVTR) more than the organic upper layer, indicating that the planarization effect was important in reducing the WVTRs. The results of this organic/ITO multilayer barrier study are expected to be useful in finding a practical solution to OLED encapsulation.     

Ta_2O_5敏感膜H~＋－ISFET研究

在不用金作掩蔽膜的情况下,在氢氟酸混合液中对采用直流反应溅射方法制备的Ｔａ２Ｏ５薄膜进行选择性腐蚀,制成Ｔａ２Ｏ５膜Ｈ＋－ＩＳＦＥＴ。测试结果表明,该器件在灵敏度、线性范围、线性度、响应时间、滞后、时漂和选择性等方面普遍优于Ｓｉ３Ｎ４膜同类器件。可直接用于溶液的ｐＨ值测量。     

A COMPLEX-TYPE FOCUSSED MAGNETRON FOR SPUTTERING

ＡＣＯＭＰＬＥＸ－ＴＹＰＥＦＯＣＵＳＳＥＤＭＡＧＮＥＴＲＯＮＦＯＲＳＰＵＴＴＥＲＩＮＧ￥ＺｈｅｎｇＳｉｘｉａｏ（郑思孝）（ＩｎｓｔｉｔｕｔｅｏｆＮｕｃｌｅａｒＳｃｉｅｎｃｅａｎｄＴｅｃｈｎｏｌｏｇｙ,ＳｉｃｈｕａｎＵｎｉｖｅｒｓｉｔｙ,Ｃｈｅｎｇｄｕ...     

Evidence for Glass–glass Interfaces in a Columnar Cu–Zr Nanoglass

Comprehensive analyses of the atomic structure using advanced analytical transmission electron microscopy-based methods combined with atom probe tomography confirm the presence of distinct glass–glass interfaces in a columnar Cu-Zr nanoglass synthesized by magnetron sputtering. These analyses provide first-time in-depth characterization of sputtered film nanoglasses and indicate that glass–glass interfaces indeed present an amorphous phase with reduced mass density as compared to the neighboring amorphous regions. Moreover, dedicated analyses of the diffusion kinetics by time-of-flight secondary ion mass spectroscopy (ToF SIMS) prove significantly enhanced diffusivity, suggesting fast transport along the low density glass–glass interfaces. The present results further indicate that sputter deposition is a feasible technique for reliable production of nanoglasses and that some of the concepts proposed for this new class of glassy materials are applicable.     

溅射法制备n型碲化镉薄膜的光电化学特性研究

采用溅射法制备了n型碲化镉薄膜。研究了不同沉积时间制备的n型碲化镉薄膜的形貌、结构和光学性质,以及薄膜厚度和退火工艺对n型碲化镉薄膜光电化学特性的影响。实验结果表明,溅射时间为25 min的碲化镉薄膜具有较好的PEC性能。退火工艺可以提高沉积的n型碲化镉薄膜的光电化学性能。当用饱和氯化镉溶液涂覆碲化镉薄膜并在真空中400 ℃退火时,n型碲化镉薄膜的光电化学性能最佳,光电流达到301 μA/cm²。     

集成电路用钽溅射靶材制备工艺研究

金属钽可作为集成电路中铜与硅基板的阻隔层材料,以防止铜与硅扩散生成铜硅合金影响电路性能。采用钽靶材通过物理气相沉积技术溅射钽到硅片上。靶材晶粒尺寸与织构取向影响溅射速率及溅射薄膜均匀性,要求钽靶材晶粒尺寸应小于100μm,在靶材整个厚度范围内应主要是(111)型织构。同时,为了避免薄膜存在杂质颗粒,要求钽靶材纯度不小于99.99%。本文对钽靶材电子束熔炼、锻造、轧制、热处理等关键工艺进行了系统研究,找到了一种有别于常规钽靶材生产工艺的新方法,所生产产品化学纯度、晶粒尺寸、织构等性能优良,产品成品率高,适于批量化生产。     

直流磁控溅射功率对溅射生长GZO薄膜光电性能的影响

本文采用直流磁控溅射沉积系统在玻璃基底上沉积镓掺杂氧化锌(GZO)薄膜,将溅射功率从120W调整到240W,步长为30W,研究功率变化对GZO薄膜的晶体结构、表面形貌、光学性能和电学性能的影响。结果表明,溅射功率对GZO薄膜电阻率有显著的影响。溅射功率为210W时薄膜呈现最低电阻率为3.31×10~(-4)Ω·cm,可见光波段平均光学透光率接近84%。随着溅射功率的增加,薄膜表面形貌和生长形态发生较大变化,并直接得到具有一定凸凹不平的微结构,GZO薄膜的致密性先增加后降低。     

射频输入功率对DLC∶F∶Si薄膜结构和附着特性的调制机理

以SiC陶瓷靶为靶材,Ar和CHF_3为源气体,采用反应磁控溅射法在双面抛光的316L不锈钢基片上制备出了系列Si和F共掺杂的DLC∶F∶Si薄膜。研究了射频输入功率对薄膜的附着力、硬度和表面接触角的影响。结果表明,选取适当的输入功率(180W左右)可以制备出附着力达11N的DLC∶F∶Si薄膜。通过拉曼和红外光谱分析以及样品粗糙度分析,作者提出了输入功率对DLC∶F∶Si薄膜结构和特性调制的机理,即输入功率直接影响SiC靶的溅射产额、空间Ar~+的能量以及CHF_3的分解程度,继而影响空间Si、C、-CF、-CF_2,特别是F~*等基团的能量和浓度,调制薄膜中F含量以及Si-C键含量和C网络的关联度。Si-C、C=C键的增加有助于薄膜附着力的明显改善,F含量的减少则会导致薄膜的疏水性能有所下降。     

Cu/Al_2O_3复合薄膜的制备及其抗氧化性能

本文在纺织纤维基材表面采用二次溅射沉积法制备了Cu/Al_2O_3复合薄膜,利用扫描电镜(SEM)、X射线能谱仪(EDX)和矢量网络分析仪对室温环境下存放3600h的复合薄膜的表面形貌、元素含量以及屏蔽效能进行了测试,并与相同工艺条件下制备的纯Cu薄膜进行了对比分析。结果表明:与纯Cu薄膜结构的不稳定性相比,由于复合薄膜表层Al_2O_3薄膜的结构稳定性和致密性,Cu/Al_2O_3复合薄膜在保证高屏蔽性能的前提下,具有整体结构的稳定性,表现出了良好的抗氧化性能。     

高透钻面玻璃在线连续镀膜技术研究

使用立式连续直线镀膜生产线,采用真空磁控溅射技术在玻璃表面设计并镀制了Nb2O5/Si O2/Nb2O5/Si O2/CNx多层纳米硬质增透薄膜,并研究其透过率、硬度及理化性能。结果表明:通过引入线性阳极层离子源,控制并形成新的磁控溅射镀膜工艺,钻面玻璃产品的表面硬度达994.8 HV,是普通玻璃的2倍以上;在可见光透过率≥94%,具有一定的增透效果;经过酸/碱/溶剂/热处理后的透过率衰减ΔT0.1%,理化性能优良。