连续滴定法测定矿石及合金中砷锑含量

用浓硫酸溶样,在一定温度下,先用硫酸铈滴定,再用溴酸钾滴定,可分别计算出Sb和As的含量.该法操作简单、测定快速,相对标准偏差小于1.5%,适用于常规的矿石和合金中砷锑的测定.     

Sb掺杂Sn_2S_3薄膜的制备及光学特性

真空蒸发制备Sb掺杂Sn2S3多晶薄膜(玻璃衬底),研究不同比例Sb掺杂对Sn2S3薄膜的结构、表面形貌、化学组分及光学特性的影响。实验给出5%掺Sb的薄膜经380℃热处理30min(氮气保护)得到正交晶系的Sn2S3∶Sb多晶薄膜,薄膜表面颗粒大小均匀,膜面致密有轻微颗粒聚集现象。薄膜体内Sn与S化学计量比为1∶1.49,掺Sb后为1∶0.543,薄膜中Sn、S、Sb分别以Sn2+、Sn4+、S2-、Sb5+存在。纯Sn2S3薄膜的光透过率在350~500nm波长范围内基本为零,随着波长增大,光透过率增加,其直接光学带隙为2.2eV,吸收边为564nm;掺Sb后薄膜的光透率明显降低,光学带隙为1.395eV比未掺杂时减小0.805eV,吸收边发生红移为889nm。     

Highly Improved Sb2S3 Sensitized‐Inorganic–Organic Heterojunction Solar Cells and Quantification of Traps by Deep‐Level Transient Spectroscopy

The light‐harvesting Sb₂S₃ surface on mesoporous‐TiO₂ in inorganic–organic heterojunction solar cells is sulfurized with thioacetamide (TA). The photovoltaic performances are compared before and after TA treatment, and the state of the Sb₂S₃ is investigated by X‐ray diffraction, X‐ray photoelectron spectroscopy, and deep‐level transient spectroscopy (DLTS). Although there are no differences in crystallinity and composition, the TA‐treated solar cells exhibit significantly enhanced performance compared to pristine Sb₂S₃‐sensitized solar cells. From DLTS analysis, the performance enhancement is mainly attributed to the extinction of trap sites, which are present at a density of (2–5) × 10¹⁴ cm^?3 in Sb₂S₃, by TA treatment. Through such a simple treatment, the cell records an overall power conversion efficiency (PCE) of 7.5% through a metal mask under simulated illumination (AM 1.5G, 100 mW cm^–2) with a very high open circuit voltage of 711.0 mV. This PCE is, thus far, the highest reported for fully solid‐state chalcogenide‐sensitized solar cells.     

AIGaAsSb Buffer/Barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability

InAs/AlGaAsSb deep quantum well was successfully formed on GaAs substrate and examined for two electron devices, Hall elements (HEs), and field-effect transistors (FETs). With a thin buffer layer of 600 nm AIGaAsSb on GaAs substrate, we observed high electron mobility more than 23000 cm²/Vs and extrinsic effective electron velocity of 2.2 x 10⁷ cm/s for a 15 nm thick InAs channel at room temperature. AIGaAsSb lattice matched to InAs was discussed from the view points of insulating property, carrier confinement, and oxidization rate. Reliability data good enough for practical use were also obtained for HEs. We demonstrated AIGaAsSb as a promising buffer/barrier layers for InAs channel devices on GaAs substrate, and we discussed the possible advantages of AIGaAsSb also for InGaAs FETs.     

Low-temperature processing of antimony-implanted silicon

It is shown for the first time that antimony-implanted silicon produces the highest electrical activation (90%) with low resistivity (<200 ohms/square) following low-temperature processing. Thus, annealing at 650°C produces the best results for antimony, whereas for arsenic, it is necessary to anneal at temperatures above 1000°C to get optimum results. Silicon was implanted with antimony at 12 keV and 40 keV and doses of 8.5×10¹⁴ cm⁻² and 4×10¹⁴ cm⁻², respectively, and arsenic at equivalent energies and doses. The electrical data from both implants are compared in order to identify the process conditions require to obtain optimum results. It is demonstrated that annealing below 800°C produces electrical profiles with no measurable diffusion of the antimony, but higher temperature anneals produce significant diffusional broadening.     

Radiation damage and annealing behaviour in Be+-implanted pure Ga(Al)Sb layers

Implantation of Be⁺ ions into GaAISb epilayers is used to realize thep ⁺ layer of the Ga_0.96Al_0.04Sb p⁺/Ga_0.96Al_0.04Sbn ⁻ /GaSbn ⁺ (1.55 /Μm) avalanche photodetector whose performances are detailed in Ref. (1). The GaAISb layers are grown using liquid phase epitaxy (LPE); the quality of these as-grown layers is shown through photoluminescence and channeling measurements. The last part of this paper is devoted to the damaging level in the Be⁺-implanted layers. Some annealing techniques are presented as a mean of restoration of the implanted layers. It is clear from the results that the Be⁺ ion implantation leads to a low damage level in this III-V compound.     

Ge2Sb2Te5的电化学特性及化学机械抛光

从电化学角度研究了Ge2Sb2Te5薄膜在化学机械抛光液中的作用，以及不同的pH值和H2O2浓度下的电化学特性. 采用Solartron SI1287电化学设备测试了Ge2Sb2Te5薄膜在溶液中的开路电位和动电位扫描. 开路电位结果表明：Ge2Sb2Te5在pH值为10的抛光液中表现出钝化行为；而抛光液的pH值为11时，开始向活化转变；当pH值为12时，薄膜处于活化状态. 在动电位扫描过程中，不同的pH值和H2O2浓度下，薄膜的扫描曲线形状相似，表明薄膜腐蚀具有相同的反应机理. 自制碱性抛光液，对Ge2Sb2Te5薄膜进行化学机械抛光，用SEM和EDS对抛光后的结构进行分析. 结果表明，通过CMP实现了Ge2Sb2Te5填充结构.     

FAAS法连续测定电解锰阳极板中银和锑

在电解法制锰时，阳极板中微量元素直接影响板的使用寿命和导电性能，其中主要有银和锑。文中用硝酸和酒石酸的混合酸处理样品￣［１］，在不过滤的情况下直接测定，方法快速简便。通过试样分析及方法检验，结果满意。银和锑的加标回收率分别达１０５％，９８％；标准偏差分别为０．００５６，０．００１３；相对标准偏差分别为２．１％，３．３８％。     

钛酸酯偶联剂在LDPE填充体系中的应用

研究了钛酸酯偶联剂处理ＣａＣＯ３、Ｓｂ２Ｏ３填料表面微观的结构变化及对ＬＤＰＥ／ＣａＣｏ３、ＬＤＰＥ／Ｓｂ２Ｏ３体系性能的影响。结果表明，提高了ＬＤＰＥ／ＣａＣＯ３体系的断裂伸长率，具有较好的加工流动性；改善了ＬＤＰＥ／Ｓｂ２Ｏ３体系的阻燃性及冲击性能。     

应用双道原子荧光光度计同时测定水中砷和锑

氢化物发生原子荧光光度法同时测定水中砷和锑,在优化实验条件下,砷和锑的检出限可分别达到:As:0.020μg/L,Sb:0.041μg/L。