Electro-organic synthesis without supporting electrolyte: Possibilities of solid polymer electrolyte technology

The application of ion exchange membranes as solid polymer electrolytes (SPE) in fuel cells is state-of-the-art. This technology needs no supporting electrolyte; consequently it can be applied for electro-organic syntheses in order to save process steps. In this case the process is not predetermined to a maximized energy efficiency so that the selection of the cell design, of the electrode materials and of the operating conditions can be focused on a high selectivity of the electrode reactions. The electro-osmotic stream, which is caused by the solvation shells of the ions during their migration through the membrane, and hence is a typical property of SPE technology, has a significant effect on the electrode reactions. It generates enhanced mass transfer at the electrodes, which is beneficial for reaction selectivity. It can be influenced by the choice of, and possibly by the preparation of, the membrane. An additional remarkable advantage of SPE technology is the exceptional long durability of oxide coated electrodes. By combination of several process engineering methods stable operation of SPE cells has been realized, even for examples of non-aqueous reaction systems. Experiments up to 6000 h duration and in cells of up to 250 cm² membrane area show the potential for industrial application.     

聚乙烯辐照接枝体系中添加金属盐对接技率的影响

采用辐照接枝的方法，在高密度聚乙烯(HDPE)上接枝丙烯酸(AA)和对苯乙烯磺酸钠(SSS)，从而削备出了一种含羧酸基团和磺酸基团的阳离子交换膜。详细研究了接枝体系中引入添加剂醋酸钠或氯化钠对接枝率的变化规律．实验表明，在预辐照接枝和共辐照接枝中，当AA接技PE或AA与SSS共同接枝PE时，强碱弱酸盐醋酸钠通过pH效应同离子效应对接枝率呈现复杂的影响，而中性盐氯化钠经离子对效应显著提高接枝率。     

液态金属离子源发射尖的制备工艺与技术

发射尖是液态金属离子源(LMIS)的关键部件之一，其性能的优劣直接影响到整个离子源的工作稳定性。通过对系统软件和硬件的设计，开发了一套发射尖自动腐蚀装置，该装置可以对发射尖腐蚀过程中的速度和深度以及腐蚀电压进行控制，实现发射尖腐蚀工艺的重复性、可靠性，从而为液态金属离子源以及聚焦离子束系统的研制、开发提供了一个有效的辅助工具。     

锂离子电池正极材料LiMn2O4的研究进展

具有尖晶石相的LiMn2O4因价格低、无毒、无环境污染、制备简单、研究较成熟,因此有着很好的应用前景,被看作最有可能成为新一代商用锂离子二次电池正极材料.由于LiMn2O4电化学循环稳定性能不好,表现在可逆容量衰减较大,尤其在高温下(>55℃)使用衰减更严重,从而限制了它的商业化应用.经过近十几年的研究,人们对其衰减机理有了比较清晰的了解,提出了造成容量衰减的几种可能原因如Jahn-Teller畸变效应、Mn2+在电解质中的溶解、出现稳定性较差的四方相以及电解质的分解等.通过掺杂、表面包覆、制备工艺的改进,人们已能制得循环稳定性能较好的尖晶相材料.本文结合我们研究小组的最新研究成果对锂离子二次电池正极材料LiMn2O4的最新研究进展进行综述和评论.     

Patterning issues for the fabrication of sub-micron memory capacitors' electrodes

This paper describes some of the key issues associated with the patterning of metal electrodes of sub-micron (especially at the critical dimension (CD) of 0.15 μm) dynamic random access memory devices. Due to reactive ion etching lag, the Pt etch rate decreased drastically below the CD of 0.20 μm and thus K-th storage node electrode with the CD of 0.15 μm could not be fabricated using the Pt electrodes. Accordingly, we have proposed novel techniques to surmountly-the above difficulties. The Ru electrode cannot for the stack-type structure is introduced and alternative multischemes based on the introduction of the concave-type selfstructure upto using semi-Pt or Ru as an electrode material are outlined respectively.     

Magnetic effects of direct ion implantation of Mn and Fe into p-GaN

In p-GaN implanted with Mn (3×10¹⁶ cm⁻² at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely Ga_xMn_1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation are similar to those reported for Fe doping during epitaxial growth of GaN.     

真空微电子荧光平板显示器件的实验研究

真空微电子荧光平板显示器件的实验研究刘杰明，李志能，陈秀峰（浙江大学信息与电子工程学系）关键词：真空微电子，反应离子刻蚀一、引言近十年来，随着真空微电子学的崛起，利用微细加工技术，使真空元器件集成化和高性能化已成为可能，一种新型场致发射阵列真空荧光平...     

离子注入中污染的产生及防护

本文概述了离子注入过程中污染产生的原因和防止污染的措施，特别强调了对微粒污染和金属污染的防护以满足ＵＬＳＩ加工对离子注入的要求。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

氧化锌压敏电阻的老化机理

研究了ZnO压敏电阻的老化现象,提出了一种新的老化机理-线性链理论。该理论认为,在外电场作用下,压敏电阻势垒高度降低;当降低到一定值时,晶界可变电阻转化为线性晶界电阻,从而压敏链转化为线性链。线性链是稳定的,因而压敏电阻老化到一定程度后其电性能将不能完全恢复。