基于PID反馈的高Q值加速度计闭环检测电路

高Q值加速度计由于能够很好地降低热机械布朗噪声,被广泛应用于高精度低噪声检测领域,相应的闭环接口电路却成为其应用的困难之一.通过分析传感器的器件结构和动态响应,提出了一种基于PID反馈的闭环检测电路来克服传感器因高Q值造成的不利影响,改善系统的频率特性和动态响应.根据设计原理设计和测试了基于PCB板级的闭环检测电路.电...     

基于双离心机的加速度计动态校准装置

加速度计动态校准装置基于双离心机原理,通过主离心机和从离心机的同时旋转产生动态线加速度,从而实现对加速度计的动态校准.介绍了加速度计动态校准装置的工作原理,建立了其复现加速度的幅值数学模型,针对在大过载条件下从离心机精密旋转问题,设计了从离心机的结构形式和控制方案,并对校准设备所复现加速度的幅值不确定度进行了分析和试验验证,试验结果表明该装置复现动态加速度幅值测量不确定度优于0.2％.     

爆炸冲击条件下的加速度传感器结构分析

针对加速度传感器在爆炸与冲击测试中的应用,从理论与有限元仿真出发,分析传感器结构的静态响应与冲击响应.在15.4×104gn的静态载荷下,传感器结构最大应力超过材料的许用应力,将会发生结构断裂.在静态载荷下,加速度传感器在15.4×104gn的冲击加速度载荷下结构最大应力超过材料的许用应力,将会发生结构断裂.在加速度传感器的工作方向上施加幅值为15×104gn,半周期为5μs、10μs、20μs、30μs、40μs的半正弦加速度冲击载荷.在幅值为15×104gn、半周期为30μs的冲击载荷下,传感器的固定端处应力为334MPa,将会使传感器断裂失效.在幅值为15×104gn、半周期为5μs、10μs、20μs的冲击载荷下,固定端处应力超过材料许用应力,将也会发生结构断裂.悬臂梁在半周期为5μs、10μs、20μs的冲击下,将会出现断裂.大体上,冲击载荷的周期越小,固定端的应力越大集中越严重.由于传感器固有周期为9.5μs,加速度传感器在半周期为10μs的冲击载荷下出现谐振,固定端处应力变大集中加剧.分析加速度传感器在冲击载荷下的结构响应为传感器的结构设计与具体应用时的可靠性分析提供了理论依据.     

Experimental study on the package of high-g accelerometer

In this paper, the effect of the package die adhesive and package shell on the performances of silicon based MEMS high-g accelerometers was reported. Using Raman spectroscopy, the residual stress caused by different package die adhesive thickness and different package shell material was characterized. It can be concluded from the testing results that: with thicker die adhesive, the residual stress increment was much smaller; the piezoresistance variation caused by this residual stress was much smaller; and the temperature shift of the output voltage was much smaller. Comparing with the ceramic package, the stainless steel package has bigger sensitivity and bigger anti-overload ability.     

Estimation of energy expenditure in a work environment: Comparison of accelerometry and oxygen consumption/heart rate regression

The aim of this study was to compare estimation of energy expenditure (EE) in working environments, either from accelerometry or from an individual oxygen consumption/heart rate ([Vdot]O₂/HR) regression curve. The study participants were 46 volunteer workers aged 27±6 years old. A significant correlation between EE predicted by the [Vdot]O₂/HR curve and the accelerometer was observed (r=0.78, p <0.01). However, more disparities were observed between the two methods when the mean job intensity was not within 16% and 23% higher than resting HR. The accelerometer overestimated by a mean of 34.4% the prediction by [Vdot]O₂/HR regression if the intensity of the task was lower than a total of 1000 kcal/shift and underestimated the prediction by a mean of –24.9% if EE estimation of the work shift was higher than a total of 1500 kcal/shift. Despite a high correlation between both methods in the whole group, EE evaluated by accelerometry does not correspond to EE predicted by the [Vdot]O₂/HR regression curves when evaluated individually.     

Bulk micromachining of silicon in TMAH-based etchants for aluminum passivation and smooth surface

The fabrication of silicon based micromechanical sensors often requires bulk silicon etching after aluminum metallization. All wet silicon etchants including ordinary undoped tetramethyl ammonium hydroxide (TMAH)-water solution attack the overlaying aluminum metal interconnect during the anisotropic etching of (100) silicon. This paper presents a TMAH-water based etching recipe to achieve high silicon etch rate, a smooth etched surface and almost total protection of the exposed aluminum metallization. The etch rate measurements of (100) silicon, silicon dioxide and aluminum along with the morphology studies of etched surfaces are performed on both n-type and p-type silicon wafers at different concentrations (2, 5, 10 and 15%) for undoped TMAH treated at various temperatures as well as for TMAH solution doped separately and simultaneously with silicic acid and ammonium peroxodisulphate (AP). It is established through a detailed study that 5% TMAH-water solution dual doped with 38 gm/l silicic acid and 7 gm/l AP yields a reasonably high (100) silicon etch rate of 70 μm/h at 80 °C, very small etch rates of SiO₂ and pure aluminum (around 80 Å/h and 50 Å/h, respectively), and a smooth surface (±7 nm) at a bath temperature of 80 °C. The etchant has been successfully used for fabricating several MEMS structures like piezoresistive accelerometer, vaporizing liquid micro-thruster and flow sensor. In all cases, the bulk micromachining is carried out after the formation of aluminum interconnects which is found to remain unaffected during the prolonged etching process at 80 °C. The TMAH based etchant may be attractive in industry due to its compatibility with standard CMOS process.     

基于微加速度传感器的无线鼠标的设计

研究基于微加速度传感器的无线鼠标的设计,讨论了MEMS无线鼠标的软件、硬件设计和系统组成,给出了M atlab环境下系统的模型和算法。模拟结果说明:无线鼠标的设计是合理可行的,提出的二次积分近似算法是简捷有效的。     

一种扭摆式硅微机械加速度传感器

介绍了一种基于体硅微机电系统(MEMS)工艺制作的扭摆式硅微机械加速度传感器,对制作过程的一些工艺问题进行探讨,并提出相应的解决办法,主要涉及到硅-玻璃阳极键合、结构释放等关键工艺。对测试结果进行了初步分析,分辨力可以达到1mgn,测试±1gn范围内线性度可以达到99.99%。     

基于MEMS加速度传感器的双轴倾角计及其应用

利用MEMS加速度传感器设计了双轴倾角计,并采用单片机进行了线性化和温度补偿,倾斜角以模拟量和数字量2种形式输出。该倾角计体积小、重量轻、精度高,能够很好地满足MAV姿态控制及其他应用的倾角测量。     

微机械加速度计的集成化数字接口

在传感器技术的发展过程中,传统模拟输出传感器由于具有一些固有局限,正在逐渐被数字输出传感器所取代.数字技术的应用使传统传感器成为智能传感器,并具有集成化、智能化、网络化、系统化等新特点.介绍以传统模拟传感器技术为基础,在惯性测量器件--微机械加速度传感器上集成数字接口,使之成为智能化传感器的一种设计方案.