ZnO基薄膜晶体管的研究

ZnO是一种宽带隙的光电半导体材料,能应用于很多领域,如可用在压敏变阻器、声表面波器件、气敏元件、紫外光探测等。ZnO也可以作为有源层应用于薄膜晶体管(TFT)中。ZnO基薄膜晶体管具有以下突出优势:对于可见光部分平均具有80%以上的透射率,迁移率可以高达36cm2/V·s,开/关电流比大于106,可在较低温度(甚至室温)下制备。基于这些优点,ZnOTFT具有取代有源矩阵液晶显示器中常规a-SiTFT的趋势。同时对ZnOTFT的研究也推动了透明电子学的发展。本文阐述了ZnOTFT优越的电学性能,指出了其目前尚存在的不足,并对其发展前景进行了展望。     

低流度油藏分类及开发特征研究

低流度油藏指流度低于30×10-3μm2/mPa.s的油藏。根据流度大小以及油藏在开发生产中表现出的特征,可将低流度油藏分为一般低流度油藏、特低流度油藏和超低流度油藏。对大港低流度油藏的研究表明,由于低流度油藏地质情况复杂,地层认识不清,因而开发特征复杂,表现为采油速度低,采出程度和采收率低;注水效果差,油藏井距不适应;油井见水后含水迅速上升,产量则急剧下降。     

软X射线对血液有形成分表面电荷的影响——2、淋巴细胞和血小板膜电荷的变化

软X射线不仅能引起红细胞表面电荷的变化,同时也能导致淋巴细胞和血小板表面电荷下降,表现为照射后它们的电泳率下降。低剂量范围内,这种电荷的变化是暂时性的,照后4小时降到最低点,24小时后恢复到对照的水平。细胞电泳率的下降与辐射剂量相关。淋巴细胞是一个复杂的细胞群,正常状态下,按细胞在电场中泳动速度的快慢,可分为两个组分:快峰为T细胞,慢峰为B细胞。软X射线照射以后,T和B细胞的电泳率皆减慢,频数分布峰值下降,离散度加大。血小板成分单一,电泳率较一致。 从照射浓集的血小板再加回自身血浆中电泳率的下降较照射血浆再加到血小板中的电泳率下降大得多;受照射的血小板在磷酸缓冲液中电泳率下降较在血浆悬液中严重得多;2000 rad照后,悬浮于血浆中的血小板电泳率能恢复,而悬浮于磷酸缓冲液中则不能恢复,三个方面来看,血浆中可能存在抗辐射因子。超氧化物岐化酶能有效地预防血小板电泳率的下降,从而可阻止血小板的凝聚。     

指针推进移动性管理策略中指针链长度的概率

为了降低移动通信网络中位置跟踪操作的代价,指针推进策略被提出.显然,指针链长度的确定对这一策略的有效应用是至为重要的.已有论文假定移动台在位置区的逗留时间服从指数分布的条件下,对指针链的长度进行研究,但指数分布的特殊性,限制了其研究结果的应用.本文推广了上述结果,研究了移动台在位置区的逗留时间服从一般概率分布的指针推进策略,通过构造向量马氏过程,利用密度演化方法,导出了指针链长度的概率公式,这个公式可用于对各种指针推进策略性能的评价.     

AHMED experiments on hygroscopic and inert aerosol behaviour in LWR containment conditions: experimental results

Hygroscopic NaOH, CsI, CsOH and inert Ag aerosol behaviour at different temperatures and relative humidities (RH) has been studied in a well instrumented and controlled vessel of 1.81 m³ total free volume. Homogeneous thermal-hydraulic conditions for aerosol measurement in the vessel were achieved. The aerosol number and mass concentration were measured continuously during the experiments using a Condensation Nucleus Counter and a Tapered Element Oscillating Microbalance. The particle size distribution and chemical composition in the test conditions were measured by Berner low pressure impactors. In the case of NaOH the half life of the aerosol mass concentration was more than four times longer at low RH (22%) as compared to high RH (96%). The half lives of the CsOH and CsI aerosols were only twice as long at low RH as compared to high RH. Thus at high RH (96–97%) the half lives of CsOH and CsI were twice as long as the half life for the NaOH aerosol. The faster decay of the NaOH aerosol is due to the smaller density decrease of NaOH during water condensation. CsOH particles grew rapidly to their equilibrium size at all humidities. The measured equilibrium size for CsOH aerosol agree well with the calculated particle size at different RHs. Experimental results were also compared with calculations obtained by severe accident computer codes. These calculated results will be presented in a later paper.     

Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements

Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg_1−xCd_xTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (E_g ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 10² m²Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering. A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed electron mobility and is found to be of the order of 10⁻⁴ of the mass of a free electron.     

The influence of dependence of HEMT’s model parameters on gate and drain voltages on upper boundary of LNA’s linearity

On the basis of numerical model the parameters of high electron mobility transistors (HEMT’s) as a function of gate and drain voltages are obtained. The simulation of nonlinear properties of low noise amplifier cascade with HEMT for various modes of its operation has shown that the account of its dependence simultaneously on both the voltages allows to approach the results of calculation to experimental data.     

Effect of rare-earth doping on the electrical and photoelectrical properties of furazano [ 3,4-b] piperazine (FP) thin-film devices

Schottky diodes of rare-earth, praseodymium (Pr)-doped and samarium (Sm)-doped furazano [3,4-b] piperazine (FP), sandwiched between Al and indium-tin oxide (ITO) were made by a spin-coating technique. The diodes, in which doped FP behaves as a p-type organic semiconductor, exhibit rectification behaviour. The p-type semiconductivity and rectification properties of the devices improve with rare-earth doping. The electrical effects observed in these devices are explained in terms of the p-type semiconducting behaviour of the doped FP thin films and the formation of a blocking contact (Schottky barrier) with the Al electrode and ohmic contact with the ITO electrode. Various electrical parameters such as carrier mobility, position of Fermi level, free carrier concentration, trap density, trap level and conductivity of doped FP are calculated and discussed. It is found that the position of the Fermi level shifts toward the valence band on rare-earth doping; concentration of free carriers and carrier mobility increase on doping. From the capacitance-voltage (C-V measurements, various electrical parameters such as barrier height, density of ionized acceptor atoms and depletion layer width are calculated and discussed. From the action spectra and absorption spectra it is confirmed that the Al-doped FP interface forms a Schottky barrier and the ITO-doped FP interface shows ohmic contact. The photovoltaic measurement on the two devices reveals that the short circuit current, open circuit voltage, fill factor and power conversion efficiency increase on rare-earth doping.     

Mobility Influences on the Capacity of Wireless Cellular Networks

Capacity has always been a major concern in wireless networks. This letter studies the impact of mobility on the overall system capacity in wireless cellular networks. In this letter, we present a simple system model which we developed to capture the inherent relationships among system capacity, new call blocking probability, handoff dropping probability, call terminating probability, and bandwidth utilization rate. We investigate the complex relationship between mobility and capacity‐related parameters. Through simulation, we demonstrate that mobility has a significant impact on capacity and is reversely proportional to the bandwidth reserved for handoff traffic.