钎焊温度对SiC/YG8接头微观组织的影响

在保温时间为5min、钎焊温度为940~990℃条件下,采用CuMnNi钎料钎焊SiC陶瓷与YG8硬质合金.利用金相显微镜、扫描电镜和能谱仪对接头的微观组织进行分析,研究钎焊温度对接头微观组织的影响.结果表明:在靠近SiC一侧生成一层带状反应层,主要由Cu基固溶体、硅化物、碳和碳化物组成;焊缝主要由基底Cu基固溶体以及Mn、Si、Co、Cu、Ni元素形成的化合物组成.随着钎焊温度的增加,焊缝的宽度减少,焊缝中心的Cu基固溶体基底减少,而化合物相增多.     

Effect of initial density on thermal conductivity of new micro-pipeline heat conduction C/SiC composites

C/SiC composites prepared by chemical vapor infiltration technique (CVI) have been regarded as thermal structural materials widely. However, these composites still suffer from poor functional properties like low thermal conductivity, especially in thickness direction of the composites, limiting their large-scale applications. Herein, mesophase pitch based carbon fiber (MPCF) and continuous wave laser machining were utilized to construct highly effective heat conductive micro-pipelines within CVI C/SiC composite. The effect of initial density on the final density and thermal conductivity of the as-obtained MPCF-C/SiC composites were investigated. The results revealed that higher initial density would directly enhance the thermal conductivity and reduce the negative impact of the bottle-neck effect. At temperatures between 100°C and 500°C, MPCF-C/SiC composites preserved more than threefold of the thermal conductivity (340%) when compared to reference C/SiC composites. This work provides a highly effective route for enhancing the thermal conductivity of C/SiC, which would broaden their future applications.     

Effect of AlN addition on the electrical resistivity of pressureless sintered SiC ceramics with B4C and C

The effect of 0–12 wt% AlN addition on the electrical resistivity of SiC ceramics pressureless sintered with 0.7 wt% B₄C and 2.5 wt% C additives was investigated. The elemental analysis of SiC grains revealed a codoping of Al and N in the SiC lattice with a higher N concentration with 1 wt% AlN addition and a higher Al concentration with 12 wt% AlN addition. The electrical resistivity decreased by four orders of magnitude (1.7 × 10⁵ → 8.3 × 10¹ Ω cm) with 1 wt% AlN addition due to the increased carrier density (1.7 × 10¹⁰ → 2.3 × 10¹⁵ cm⁻³) caused by excess N-derived donors. However, subsequent AlN addition (4 → 12 wt%) led to an increase (2.9 × 10³ → 1.2 × 10⁴ Ω‧cm) in electrical resistivity due to (1) increased Al dopants which act as deep acceptors for trapping N-derived carriers causing a decrease in carrier density (2.3 × 10¹⁵ → 5.9 × 10¹³ cm⁻³), (2) the formation of electrically insulating SiC-AlN solid solution, and (3) the presence of electrically insulating AlN grains at the grain boundaries.     

基于体效应的SiC MOSFET器件栅极老化监测方法研究

长期以来,栅极老化一直是SiC MOSFET器件可靠性研究的关键,而偏置温度不稳定性则是栅极老化的重要现象。由于栅极老化的偏置温度不稳定性存在应力撤出后的恢复现象,如能在可靠性实验中快速、准确地监测SiC MOSFET器件的栅极老化变化量,对可靠性研究具有重要意义。因此,文中提出一种新的栅极老化监测方法。该方法以体效应下的阈值电压VTH(body)为基础,建立理论模型来描述VTH(body)和栅极老化之间的关系。提出在栅极电压开关过程中从体二极管电压–栅极电压曲线中得到VTH(body)的方法,并详细研究实验参数对VTH(body)的影响。此外,通过高温栅偏实验对VTH(body)的实用价值进行验证,并与栅极老化参数阈值电压VTH进行对比。实验结果证明,提出的新型栅极老化监测方法可以实现栅极老化的快速、准确及非恒温环境监测。     

SiC MOSFET短路失效与退化机理研究综述及展望

SiC MOSFET可以大幅提升变流器的效率和功率密度,在高频、高温、高压等领域有较好的应用前景。但是,由于其短路耐受时间短、特性退化现象严重以及失效机理模糊等因素,致使SiC MOSFET的普及应用受到了限制。因此,探究SiC MOSFET短路失效与特性退化的机理,可以为SiC MOSFET器件的应用及其保护电路的设计提供指导,具有重要的研究价值。该文首先归纳SiC MOSFET的短路故障类型,并针对其中一种典型的短路故障进行详细的特性分析。在此基础上,论述SiC MOSFET单次短路故障后存在的两种典型失效模式,综述其在两种失效模式下的失效机理以及影响因素。其次,对SiC MOSFET经历重复短路应力后器件特性退化机理的研究现状进行系统的总结。最后指出当前SiC MOSFET短路失效与特性退化的研究难点,展望SiC MOSFET短路特性研究的发展趋势。     

Mechanical,thermal, and dielectric properties of SiCf/SiC composites reinforced with electrospun SiC fibers by PIP

Electrospun unidirectional SiC fibers reinforced SiC_f/SiC composites (e-SiC_f/SiC) were prepared with ∼10% volume fraction by polymer infiltration and pyrolysis (PIP) process. Pyrolysis temperature was varied to investigate the changes in microstructures, mechanical, thermal, and dielectric properties of e-SiC_f/SiC composites. The composites prepared at 1100 °C exhibit the highest flexural strength of 286.0 ± 33.9 MPa, then reduced at 1300 °C, mainly due to the degradation of electrospun SiC fibers, increased porosity, and reaction-controlled interfacial bonding. The thermal conductivity of e-SiC_f/SiC prepared at 1300 °C reached 2.663 W/(m∙K). The dielectric properties of e-SiC_f/SiC composites were also investigated and the complex permittivities increase with raising pyrolysis temperature. The e-SiC_f/SiC composites prepared at 1300 °C exhibited EMI shielding effectiveness exceeding 24 dB over the whole X band. The electrospun SiC fibers reinforced SiC_f/SiC composites can serve as a potential material for structural components and EMI shielding applications in the future.     

Oxidation of ultrahigh temperature ceramics: kinetics,mechanisms, and applications

Materials capable of oxidizing in a protective manner at ultrahigh (>1700 °C) temperatures are needed to push beyond this barrier defined by SiC. Although possessing attractive mechanical properties and oxidation resistance, SiC-based materials are ultimately temperature limited by the melting point of SiO₂. The vast array of ultra-high and high temperature ceramic literature indicates the majority of these materials, like borides, carbides, MAX-phases, and high-entropy ceramics, fall woefully short regarding oxidation resistance. However, for specific applications, like low-orbit aeropropulsion, high ballistics coefficient atmospheric re-entry, and hypersonic cruise, there are a few promising materials. In the present review, oxidation criteria are gathered to build application specific heuristics and are then applied to a multitude of ultra-high temperature ceramics to gauge material efficacy. Discussion of oxidation kinetics, mechanisms and reaction products is offered for each material, identifying strengths, weaknesses, and the remaining gaps in our knowledge.     

Creep behavior and failure mechanisms of CVI and PIP SiC/SiC composites at temperatures to 1650 °C in air

Creep properties of 2D woven CVI and PIP SiC/SiC composites with Sylramic™-iBN SiC fibers were measured at temperatures to 1650 °C in air and the data was compared with the literature. Batch-to-batch variations in the tensile and creep properties, and thermal treatment effects on creep, creep parameters, damage mechanisms, and failure modes for these composites were studied. Under the test conditions, the CVI SiC/SiC composites exhibited both matrix and fiber-dominated creep depending on stress, whereas the PIP SiC/SiC composites displayed only fiber-dominated creep. Creep durability in both composite systems is controlled by the most creep resistant phase as well as oxidation of the fibers via cracking matrix. Specimen-to- specimen variations in porosity and stress raisers caused significant differences in creep behavior and durability. The Larson-Miller parameter and Monkman-Grant relationship were used wherever applicable for analyzing and predicting creep durability.     

Low temperature seamless joining of SiC using a Ytterbium film

Monolithic SiC, for the first time, was seamless joined at a low temperature of 1200 °C using electric field-assisted sintering technology. A 300 nm Yb coating on SiC was used as the joining filler to form Yb₃Si₂C₂ via an in-situ reaction with the SiC. A liquid phase was formed by an eutectic reaction between Yb₃Si₂C₂ and SiC. Almost completely seamless joints were formed by the precipitated SiC grains, which were fully consolidated with the SiC matrix with the help of in-situ formed liquid phase, followed by its elimination under the uniaxial pressure. The bending strength of the seamless joint joined at 1500 °C for 15 min was as high as 257.2 ± 31.1 MPa, which was comparable to the strength of the SiC matrix. As a result, the failure occurred in the matrix indicated a sound joint was obtained. The proposed low temperature seamless joining could potentially be used for joining of SiC-based composite.     

造孔剂含量对无压浸渗法制备SiC/Al复合材料性能的影响

采用无压浸渗法制备了SiC/Al复合材料,研究了造孔剂含量对SiC/Al复合材料性能的影响。实验结果表明:不同含量的造孔剂对残余气孔率的影响不同,随着造孔剂加入量的增加,残余气孔率先减小后增大,但试样抗弯强度呈先增加后减小。在SiC/Al复合材料中加入质量分数为20%的造孔剂时,SiC/Al复合材料的抗弯强度出现最大值,其残余气孔率达到最小值0.9%左右。