六方氮化硼忆阻器的研究进展

六方氮化硼是一种与石墨烯结构相似的材料,以六方氮化硼作为阻变介质层的忆阻器,具有良好的散热性能,不易发生介电击穿,能够实现小尺寸、低功耗和大的开关比;在计算机运算存储研究、人工神经网络和神经形态(即类脑)计算领域有极大的应用前景。文章主要介绍了忆阻器的分类,分析了六方氮化硼忆阻器的阻变机制,综述了六方氮化硼忆阻器的研究现状。最后,指出了六方氮化硼忆阻器当前面临的挑战,并展望了未来的发展方向。     

电力电子电路中的分岔、混沌及其应用研究

以Twin-T电路和基于忆阻器的混沌电路(Memristor based Chaotic Circuit-MCC)为辅助,主要分析了数字控制电力电子电路中的分岔和混沌现象,并将混沌应用到电力电子电路中,以达到性能优化的目的。通过在Twin-T电路中两个电容直接相连的连接点上接入发光二极管元件,设计了一个新Twin-T混沌电路。以控制信号强度为分岔参数绘制分岔图,结果显示系统随控制信号强度增加经周期递加分岔步入混沌振荡。利用忆阻器元件取代蔡氏电路非线性二极管,结合分岔图、功率谱、最大Lya-punov指数等数值分析工具研究了系统分岔路径和双涡卷奇异吸引子结构。考虑到Twin-T电路优良的选频特性,设计了一种基于Twin-T电路的陷波混沌控制器。此控制器包含了一个陷波滤波器和一个电压电流转换接口电路。理论分析和实验结果均表明此控制器可以快速有效地将系统混沌控制到周期轨道上。超混沌系统具有至少两个大于零的Lyapunov指数,系统动态规律也更为复杂。通过修改MCC,设计了一个新的四阶超混沌电路。采用奇异值分解方法计算系统的Lyapunv指数谱,结果显示系统在某些参数区间内具有两个Lyapunov指数的值大于零。目前对变换器电路中的分岔和混沌现象研究多集中在模拟控制方式下,对于数字控制方式产生的时间延迟和量化误差很少考虑。以一台数字控制同步Buck变换器(Synchronous Buck Converter-SBC)为研究对象,利用z域小信号模型分析了比例-积分补偿策略下系统的分岔行为。在此基础上,利用描述函数等效出量化误差在控制环路引入的动态增益,并估算出系统的极限环区间。开关磁阻调速系统(Switched Reluctance Drive-SRD)可以看作是包含运动部件的电力电子电路。由于其特殊的定转子双凸极结构,系统存在铁磁饱和、频繁换相等非线性特征。在假设相电感与相电流无关的基础上,对比了模拟和数字两种控制方式下SRD的分岔行为。考虑到线性模型精度不高的因素,设计了一个新的基于指数函数的磁链非线性模型,利用分岔图和功率谱分析工具研究了数字控制SRD非线性模型中的分岔和混沌行为。以MCC为测试对象,验证了相空间重构技术恢复系统原吸引子的有效性。采用互信息量和虚假邻点方法获取最佳重构时延和嵌入维数,同时结合G-P算法和小数据量方法计算了系统的分形维和最大Lyapunov指数。在此基础上,基于MATLAB的Simulink仿真环境构建了采用模糊控制策略的SRD系统,并计算其重构相空间的分形维和最大Lyapunov指数。计算结果表明模糊控制SRD系统存在较大范围的混沌区间。混沌信号的一些特殊性质可以采取措施加以利用。以MCC电压信号作信号源,实现了SBC的混沌扩频。基于模糊控制SRD存在较大范围混沌区间这一研究结论,提出一种基于反馈转差变换率序列的SRD系统混沌扩频策略,仿真和实验结果均证实此扩频策略可以有效降低系统在开关频率及次谐波点的功率谱尖峰幅值。同时,分析数字控制SRD变换器不同单相故障下滤波电容电压频率谱,结合细节电压信号的混沌特征不变量,实现了变换器单相故障的识别。     

A bridge technique for memristor state programming

ABSTRACT

In order to effectively use a memristor in analog circuits, its memristance should be adjusted to a desired value between its limits. Since the maximum and minimum required memristance typically varies considerably between different types of memristors, it is almost impossible to tune the resistance of each memristor based on a reference resistor. Which is mostly done using some programmer circuits. Moreover, those programming strategies involving pulses are time-consuming and they impose high hardware headroom. In this paper, a novel CMOS circuit is presented for programming memristors. A Wheatstone bridge circuit is used to measure the current memristance, while the programming current is flowing through the device. Using such an approach reading the state and its adjustment are done simultaneously, which reduces the programming latency. In the proposed method, instead of tuning the memristance, the state of the memristor will be set to the desired value, which is proportional to a control voltage. The low programming latency, six-bit accuracy, and use of a simple circuit for programming, are the main advantages of our solution. The proposed circuit is designed and laid out in 0.35 µm CMOS technology and takes 0.0273mm². Furthermore, the proposed approach is applied to a memristor emulator to demonstrate its correct operation in real applications.     

Memristor Kinetics and Diffusion Characteristics for Mixed Anionic‐Electronic SrTiO3‐δ Bits: The Memristor‐Based Cottrell Analysis Connecting Material to Device Performance

Memristors based on mixed anionic‐electronic conducting oxides are promising devices for future data storage and information technology with applications such as non‐volatile memory or neuromorphic computing. Unlike transistors solely operating on electronic carriers, these memristors rely, in their switch characteristics, on defect kinetics of both oxygen vacancies and electronic carriers through a valence change mechanism. Here, Pt|SrTiO_3‐δ|Pt structures are fabricated as a model material in terms of its mixed defects which show stable resistive switching. To date, experimental proof for memristance is characterized in hysteretic current–voltage profiles; however, the mixed anionic‐electronic defect kinetics that can describe the material characteristics in the dynamic resistive switching are still missing. It is shown that chronoamperometry and bias‐dependent resistive measurements are powerful methods to gain complimentary insights into material‐dependent diffusion characteristics of memristors. For example, capacitive, memristive and limiting currents towards the equilibrium state can successfully be separated. The memristor‐based Cottrell analysis is proposed to study diffusion kinetics for mixed conducting memristor materials. It is found that oxygen diffusion coefficients increase up to 3 × 10^–15 m²s^–1 for applied bias up to 3.8 V for SrTiO_3‐δ memristors. These newly accessible diffusion characteristics allow for improving materials and implicate field strength requirements to optimize operation towards enhanced performance metrics for valence change memristors.     

纳米电子技术的发展与展望

纳米电子技术研究是提升国家核心竞争力和抢占科技制高点的战略选择,是我国实现信息科学技术跨越发展的主要途径。阐述了纳米电子技术研究的重要地位,梳理了纳米电子技术的主要研究方向和关键技术,重点研究了纳米电子技术的最新发展动向,并对其发展前景进行了展望。认为纳米电子技术是微电子技术发展的必然趋势,是催生新型信息器件的重要温床,是实现量子计算的主要途径。新型电子元器件的不断涌现,有望使摩尔定律得到延续和扩展,石墨烯研究的突破将可能使碳基CMOS逐渐取代硅基CMOS,碳纳米管的发展将使纳米集成电路走向应用,忆阻器将可能取代晶体管。     

A memristive dual-slope A/D converter

As an emerging device, memristor has several excellent properties like changeable memristance, nonvolatility, and nanoscale. Based on complementary metal-oxide-semiconductor (CMOS) dual-slope analog-to-digital (A/D) converter, this paper proposes a memristive dual-slope A/D converter. Owing to the usage of memristor, the proposed memristive A/D converter not only has more compact circuit structure and simpler control timing than the CMOS one but also has advantages over the existing memristive conversion circuits in circuit design and application. For the memristive A/D converter, a conversion process consists of two count procedures. By means of controlling the memristance change in the two count procedures, the A/D converter converts an analog signal to the corresponding digital count value. Meanwhile, the conversion result is inferred according to the circuit structure of the A/D converter. Then, combining the conversion process and PSPICE simulation, this paper analyzes the anti-interference performance of the A/D converter. Further, the robustness of the A/D converter is presented, applying the similar analysis methods. The analysis results demonstrate that the proposed A/D converter has good anti-interference and robustness performances.     

Analysis of memristors with nonlinear memristance versus state maps

According to the axiomatic definition of the memristor from 1971, its properties are unambiguously determined by the memristance versus charge (or flux) map. The original model of the ‘HP memristor’ introduces this map via a linear function that represents this memristor as a variable resistor whose resistance is linearly dependent on the amount of charge flowing through. However, some analog applications require nonlinear, frequently exponential or logarithmic dependence of the resistance on an external controlling variable. The memristor with nonlinear memristance versus charge map is analyzed in the paper. The results are specified for the exponential type of this nonlinearity, which may be useful for future applications. Analytic formulae of the area of the pinched hysteresis loop of such a memristor are derived for harmonic excitation. It is also shown that the current flowing through such a memristor, which is driven by a voltage of arbitrary waveform, conforms to the Abel differential equation, and its closed‐form solution is found. Copyright © 2017 John Wiley & Sons, Ltd.     

基于双曲函数的双忆阻器混沌电路多稳态特性分析

基于经典蔡氏混沌振荡电路,引入一种双曲余弦函数的新型磁控忆阻器模型,设计含有两个双曲余弦忆阻器的混沌电路系统,讨论了系统平衡点集面的稳定区间.选择不同的忆阻初始值进行数值仿真,通过分岔图与Lyapunov指数谱研究双曲忆阻混沌系统的多稳态特性.结果表明,含双曲函数的双忆阻混沌电路具有复杂的动力学行为,运动轨迹不仅依赖于电路参数,还受电路的初始状态影响,由此产生了不同拓扑结构的混沌吸引子与不同周期运动的多稳态隐藏吸引子共存现象.     

基于忆阻器的五阶MCK混沌电路研究

采用忆阻器替换分段线性电阻的方法,在Matsumoto,Chua和Kobayashi (MCK)提出的四阶混沌电路基础上,设计了一个含有忆阻器的五阶对称混沌电路,建立了五阶忆阻混沌电路的数学模型.采用常规动力学分析方法,分析了五阶忆阻混沌电路的平衡点集及其稳定性、Lyapunov指数.采用常规元器件,构建了五阶忆阻混沌电路的仿真模型,并进行了电路仿真实验.理论分析和仿真实验结果表明,设计的五阶忆阻混沌电路具有丰富的混沌行为,丰富了忆阻混沌电路的设计与应用.