排序方式: 共有48条查询结果,搜索用时 15 毫秒
21.
The Cu2ZnSnS4 (CZTS) powders are successfully synthesized by using ZnS and Cu2SnS3 as raw materials directly without any intermediate phase at 450 °C for 3 h in Ar atmosphere. The crystalline structure, morphology and optical properties of the CZTS powders are characterized by X-ray diffraction (XRD), Raman spectrum, field emission scanning electron microscopy (FESEM) and ultraviolet-visible (UV-vis) spectrophotometer, respectively. The results show that the band gap of the obtained CZTS is 1.53 eV. The CZTS film is fabricated by spin coating a mixture of CZTS powders and novolac resin with a weight percentage of 30%. The photoelectrical properties of such CZTS films are measured, and the results show an incident light density of 100 mW.cm-2 with the bias voltage of 0.40 V, and the photocurrent density can approach 9.80×10-5 A.cm2within 50 s, giving an on/off switching ratio of 1.64. 相似文献
22.
高磷铁矿脱磷技术现状及磷资源化提取新方法 总被引:1,自引:0,他引:1
为了提高磷铁矿作为炼铁原料的使用率,对高磷铁矿中磷元素的降低和脱除技术(选矿法、化学浸出法、生物浸出法、高温脱磷法)的特点及发展现状进行了综合评述,并从磷的资源化利用的角度探讨其提取与利用的可能性。介绍了一种基于湿法酸浸-生物吸附方法提取高磷铁矿或高温脱磷渣中磷资源新工艺技术,对其基本原理、工艺流程与技术特点进行了讨论。该提磷新方法的最大优势在于可以从pH值为1~2的酸浸溶液中直接选择性地吸附脱磷,使酸液得以循环使用,而磷也可解吸成高纯度的磷酸盐得以回收,吸附剂本身则可以多次循环使用。 相似文献
23.
24.
25.
采用密度泛函理论广义梯度近似平面波赝势法结合周期平板模型,研究F离子在γ-Al_2O_3(110)非极性表面的吸附行为,分析了F~-离子在其表面不同吸附位以及不同覆盖度下吸附构型和电子特性。结果表明:表面配位不饱和的Al为F~-离子活性吸附位,F离子在γ-Al_2O_3(110)表面化学吸附后形成F-Al键促使F~-离子活化;F~-离子在Al_Ⅲ(1)桥位吸附时最稳定。随着覆盖度增加,吸附能增大,F离子与表层原子的距离(d_(F~--surf)缩短:同时表面吸附F离子引起表层及次表层原子层间距发生不同程度偏移,最大幅度为10.07%。差分电荷密度与电子态密度分析指出,F离子在γ-Al_2O_3(110)表面吸附主要是由F~-离子2s和2p轨道与γ-Al_2O_3基底Al的3p轨道相互作用所致。 相似文献
26.
27.
Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3.1×10-4 Ω·cm-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17.6 N·S and 1.36×1021 cm-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3.48 eV to 3.62 eV. 相似文献
28.
醇盐水解法制备TiN包覆SiC复合粉末 总被引:1,自引:0,他引:1
以醇盐水解氨气氮化法在SiC颗粒表面包覆TiN,研究TiO2前躯体的种类、醇盐水解方式和加水量对水解反应生成的TiO2颗粒的粒径和分散性的影响,分析TiO2包覆层在不同氮化温度下的结构演变,重点对醇盐水解氨气氮化反应的机理和TiN包覆层的形貌、物相组成和热稳定性进行讨论。结果表明:醇水溶液加热法比沉淀法更容易获得均匀连续的TiO2包覆层,加水量是有效减少TiO2团聚颗粒的关键因素。TiO2包覆层在1 000℃于氨气中进行氮化能够完全转变为TiN,所得的TiN包覆层均匀连续,TiN颗粒的粒径为30~70 nm。在温度高于546℃时,TiN包覆层在空气气氛中容易发生氧化而导致稳定性降低。 相似文献
29.
30.